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    BFX85 NPN Search Results

    BFX85 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    BFX85 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor BFX85

    Abstract: BFX85 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX85 NPN switching transistor Product specification Supersedes data of Sepember 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN switching transistor BFX85


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    PDF M3D111 BFX85 MAM317 SCA54 117047/00/02/pp8 transistor BFX85 BFX85 BP317

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    Abstract: No abstract text available
    Text: BFX85 MECHANICAL DATA Dimensions in mm inches NPN SILICON EPITAXIAL SWITCHING TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) VCEO = 60V 12.70 (0.500) min. 0.89 max. (0.035) IC = 1A 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200)


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    PDF BFX85 O-205AD)

    BFX85

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BFX85 TO-39 Metal Can Package AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO


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    PDF BFX85 C-120 BFX85Rev310701 BFX85

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    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BFX85 TO-39 Metal Can Package AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO


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    PDF BFX85 C-120 BFX85Rev310701

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    Abstract: No abstract text available
    Text: BFX85 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


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    PDF BFX85 O205AD) 10/10m 19-Jun-02

    BFX85

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR BFX85 TO-39 Metal Can Package AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF BFX85 C-120 BFX85Rev310701 BFX85

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    Abstract: No abstract text available
    Text: <£e.mi- lonaaakoi \Piodudi, TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN switching transistor BFX85 FEATURES PINNING • High current (max. 1 A) • Low voltage (max. 60 V). PIN 1 2 APPLICATIONS


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    PDF BFX85 100mA -15mA

    BFX85

    Abstract: BFX85 npn
    Text: BFX85 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


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    PDF BFX85 O205AD) 10/10m 1-Aug-02 BFX85 BFX85 npn

    bfx85

    Abstract: No abstract text available
    Text: BFX85 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


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    PDF BFX85 O205AD) 10/10m 17-Jul-02 bfx85

    BFX85

    Abstract: No abstract text available
    Text: BFX85 NPN '~1 SILICON TRANSISTOR T O -3 9 The BFX85 is NPN silicon planar epitaxial transistor designed for medium power amplifiers and switching applications where high yoltage and high current are required. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage


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    PDF BFX85 800mW 150mA 500mA 100mA* 20MHz

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    Abstract: No abstract text available
    Text: BFX85 NPN SILICON TRANSISTOR TO-39 The BFX85 is NPN silicon planar epitaxial transistor designed for medium power amplifiers and switching applications where high voltage and high current are required. ciUKJ in ABSOLUTE MAXIMUM RATINGS 100V 60V 6V 1A 800mW


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    PDF BFX85 BFX85 800mW 150mA 500mA 100mA* 20MHz

    RFX85

    Abstract: BFX85 b9036 BFX84 OFW 361 BS949 b9031 J100 silicon planar epitaxial transistors t100c
    Text: BFX84 BFX85 PHILIPS INTERNATIONAL SbE D • 711002b 0045230 0^7 M P H I N T - 2 7 - Z SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in TO-39 metal envelopes for general purpose industrial applications. Q U IC K R E F E R E N C E D A T A BFX84 BFX85


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    PDF BFX84 BFX85 711002b BFX84 RFX85 BFX85 b9036 OFW 361 BS949 b9031 J100 silicon planar epitaxial transistors t100c

    Untitled

    Abstract: No abstract text available
    Text: N APIER PHILIPS/DISCRETE L IE bbS3^31 0037756 445 « A P X BFX84 BFX85 D J I SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in TO-39 metal envelopes for general purpose industrial applications. Q UICK R E F E R E N C E D A T A BFX84 BFX85 v CBO max.


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    PDF BFX84 BFX85 Q0E7773 M040C

    silicon planar epitaxial transistors

    Abstract: bfx84
    Text: BFX84 BFX85 SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in TO 39 metal packages for general purpose industrial applications. Q U IC K R E F E R E N C E D A T A BFX84 BFX85 v CB0 max. 100 100 V Collector-emitter voltage open base v CE0 max. 60 60


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    PDF BFX84 BFX85 BFX85 silicon planar epitaxial transistors

    2N697 equivalent

    Abstract: 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 2N1711 DH3467CD N2904A BFY39 BFY50 equivalent
    Text: Discrete Devices Transistors Cont. European “Pro Electron” Types (Cont.) Near Equivalent Near Equivalent Polarity Pkg. Type BFX30 BFX37 BFX65 BFX84 BFX85 2 N2904A 2N2605* 2N2605* 2N1711 2N171-1 PNP PNP PNP NPN NPN TO-39 T O -18 T O -18 TO-39 TO-39 BSX45-10


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    PDF BFX30 N2904A BFX37 2N2605* BFX65 BFX84 2N1711 BFX85 2N171-1 2N697 equivalent 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 DH3467CD BFY39 BFY50 equivalent

    BFX85

    Abstract: 8FX85 BFX84 BFX86 F016 ferranti
    Text: »* <JS t ^NPN*' BFX84 BFX85 BFX86 ' Silicon planar medium power transistors 4 ZeTeX T h e B FX84 series o f tra n s is to rs is d esig n ed f o r sm all a n d m e d iu m sig nal, lo w and m e d iu m p o w e r a m p lific a tio n s a n d fo r g e n e ra l p u rp o se


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    PDF BFX84 BFX85 BFX86 8FX85 BFX86 150mA 8-Munich-22, F016 ferranti

    2N2708

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, lo w and medium pow er am plification from D.C. to radio frequencies in Commercial,


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    PDF 2N3571 2N3572 2N2102 2N4036 2N2708 2N1893 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91

    bc140

    Abstract: 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


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    PDF BCY79 BFX86 2N2218A 2N2904A 2N2219A 2N2905A 2N2221A 2N2906A 2N2222A 2N2907A bc140 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91

    2N2405

    Abstract: 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92
    Text: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


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    PDF BCY79 2N929 2N930 2N2219A 2N2905A 2N2222A 2N2907A ZT181 ZT182 BCY58 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92

    bc140

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    PDF BCY79 2N2218A 2N2904A 2N2219A 2N2905A 2N2221A 2N2906A 2N2222A 2N2907A BFY50 bc140 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91

    2n2218a

    Abstract: 2N2102 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86
    Text: NPN SWITCHING TA B LE 3 NPN SILICO N PLAN AR M EDIUM AN D HIGH SP E E D SW ITCH IN G T R A N S IS T O R S The devices shown in this table are characterised for general medium voltage, medium and high speed switching applications in Commercial, Industrial and Military equipments.


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    PDF 2N3262 BCY79 BFX86 2N2218A 2N2904A 2N2219A 2N2905A 2N2221A 2N2906A 2N2222A 2N2102 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86

    2N2270

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF BCY79 2N2218A 2N2904A 2N2219A 2N2905A 2N2221A 2N2906A 2N2222A 2N2907A BFY50 2N2270 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91

    2n1711 complement

    Abstract: bc140 2N2405 transistor 2n2270 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86
    Text: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The d evices s h o w n in th is ta b le are general purpose tran sisto rs desig ne d fo r sm all and m edium signal, lo w and m ed iu m p o w e r a m p lific a tio n from D.C. to rad io freq u e n cie s in C om m ercial,


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    PDF BC160 BFY50 2N1613 2N1711 ZT189 ZT211 BCY65E 1000t BCY77 2n1711 complement bc140 2N2405 transistor 2n2270 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86

    2N1893

    Abstract: 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    PDF ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92