transistor BFX85
Abstract: BFX85 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX85 NPN switching transistor Product specification Supersedes data of Sepember 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN switching transistor BFX85
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M3D111
BFX85
MAM317
SCA54
117047/00/02/pp8
transistor BFX85
BFX85
BP317
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Untitled
Abstract: No abstract text available
Text: BFX85 MECHANICAL DATA Dimensions in mm inches NPN SILICON EPITAXIAL SWITCHING TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) VCEO = 60V 12.70 (0.500) min. 0.89 max. (0.035) IC = 1A 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200)
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BFX85
O-205AD)
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BFX85
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BFX85 TO-39 Metal Can Package AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO
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BFX85
C-120
BFX85Rev310701
BFX85
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BFX85 TO-39 Metal Can Package AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO
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BFX85
C-120
BFX85Rev310701
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Untitled
Abstract: No abstract text available
Text: BFX85 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)
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BFX85
O205AD)
10/10m
19-Jun-02
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BFX85
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR BFX85 TO-39 Metal Can Package AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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BFX85
C-120
BFX85Rev310701
BFX85
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Untitled
Abstract: No abstract text available
Text: <£e.mi- lonaaakoi \Piodudi, TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN switching transistor BFX85 FEATURES PINNING • High current (max. 1 A) • Low voltage (max. 60 V). PIN 1 2 APPLICATIONS
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BFX85
100mA
-15mA
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BFX85
Abstract: BFX85 npn
Text: BFX85 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)
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BFX85
O205AD)
10/10m
1-Aug-02
BFX85
BFX85 npn
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bfx85
Abstract: No abstract text available
Text: BFX85 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)
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BFX85
O205AD)
10/10m
17-Jul-02
bfx85
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BFX85
Abstract: No abstract text available
Text: BFX85 NPN '~1 SILICON TRANSISTOR T O -3 9 The BFX85 is NPN silicon planar epitaxial transistor designed for medium power amplifiers and switching applications where high yoltage and high current are required. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage
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BFX85
800mW
150mA
500mA
100mA*
20MHz
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Untitled
Abstract: No abstract text available
Text: BFX85 NPN SILICON TRANSISTOR TO-39 The BFX85 is NPN silicon planar epitaxial transistor designed for medium power amplifiers and switching applications where high voltage and high current are required. ciUKJ in ABSOLUTE MAXIMUM RATINGS 100V 60V 6V 1A 800mW
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BFX85
BFX85
800mW
150mA
500mA
100mA*
20MHz
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RFX85
Abstract: BFX85 b9036 BFX84 OFW 361 BS949 b9031 J100 silicon planar epitaxial transistors t100c
Text: BFX84 BFX85 PHILIPS INTERNATIONAL SbE D • 711002b 0045230 0^7 M P H I N T - 2 7 - Z SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in TO-39 metal envelopes for general purpose industrial applications. Q U IC K R E F E R E N C E D A T A BFX84 BFX85
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BFX84
BFX85
711002b
BFX84
RFX85
BFX85
b9036
OFW 361
BS949
b9031
J100
silicon planar epitaxial transistors
t100c
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Untitled
Abstract: No abstract text available
Text: N APIER PHILIPS/DISCRETE L IE bbS3^31 0037756 445 « A P X BFX84 BFX85 D J I SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in TO-39 metal envelopes for general purpose industrial applications. Q UICK R E F E R E N C E D A T A BFX84 BFX85 v CBO max.
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BFX84
BFX85
Q0E7773
M040C
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silicon planar epitaxial transistors
Abstract: bfx84
Text: BFX84 BFX85 SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in TO 39 metal packages for general purpose industrial applications. Q U IC K R E F E R E N C E D A T A BFX84 BFX85 v CB0 max. 100 100 V Collector-emitter voltage open base v CE0 max. 60 60
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BFX84
BFX85
BFX85
silicon planar epitaxial transistors
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2N697 equivalent
Abstract: 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 2N1711 DH3467CD N2904A BFY39 BFY50 equivalent
Text: Discrete Devices Transistors Cont. European “Pro Electron” Types (Cont.) Near Equivalent Near Equivalent Polarity Pkg. Type BFX30 BFX37 BFX65 BFX84 BFX85 2 N2904A 2N2605* 2N2605* 2N1711 2N171-1 PNP PNP PNP NPN NPN TO-39 T O -18 T O -18 TO-39 TO-39 BSX45-10
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BFX30
N2904A
BFX37
2N2605*
BFX65
BFX84
2N1711
BFX85
2N171-1
2N697 equivalent
2N1711 equivalent
2N2219A BSX45
2N1711 MOTOROLA
2N3914
DH3467CD
BFY39
BFY50 equivalent
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BFX85
Abstract: 8FX85 BFX84 BFX86 F016 ferranti
Text: »* <JS t ^NPN*' BFX84 BFX85 BFX86 ' Silicon planar medium power transistors 4 ZeTeX T h e B FX84 series o f tra n s is to rs is d esig n ed f o r sm all a n d m e d iu m sig nal, lo w and m e d iu m p o w e r a m p lific a tio n s a n d fo r g e n e ra l p u rp o se
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BFX84
BFX85
BFX86
8FX85
BFX86
150mA
8-Munich-22,
F016
ferranti
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2N2708
Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Text: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, lo w and medium pow er am plification from D.C. to radio frequencies in Commercial,
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2N3571
2N3572
2N2102
2N4036
2N2708
2N1893
2N2405
2N4036
BFX84
BFX85
ZT86
ZT88
ZT91
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bc140
Abstract: 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Text: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,
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BCY79
BFX86
2N2218A
2N2904A
2N2219A
2N2905A
2N2221A
2N2906A
2N2222A
2N2907A
bc140
2N2405
2N1893
2N2102
2N4036
BFX84
BFX85
ZT86
ZT88
ZT91
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2N2405
Abstract: 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91 ZT92
Text: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,
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BCY79
2N929
2N930
2N2219A
2N2905A
2N2222A
2N2907A
ZT181
ZT182
BCY58
2N2405
2N1893
2N2102
2N4036
BFX84
BFX85
ZT86
ZT88
ZT91
ZT92
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bc140
Abstract: 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91
Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military
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BCY79
2N2218A
2N2904A
2N2219A
2N2905A
2N2221A
2N2906A
2N2222A
2N2907A
BFY50
bc140
2N1893
2N2102
2N2405
2N4036
BFX85
BSY55
ZT86
ZT88
ZT91
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2n2218a
Abstract: 2N2102 2N3262 2N4036 BCY65E BCY77 BFX84 BFX85 ZT189 ZT86
Text: NPN SWITCHING TA B LE 3 NPN SILICO N PLAN AR M EDIUM AN D HIGH SP E E D SW ITCH IN G T R A N S IS T O R S The devices shown in this table are characterised for general medium voltage, medium and high speed switching applications in Commercial, Industrial and Military equipments.
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2N3262
BCY79
BFX86
2N2218A
2N2904A
2N2219A
2N2905A
2N2221A
2N2906A
2N2222A
2N2102
2N4036
BCY65E
BCY77
BFX84
BFX85
ZT189
ZT86
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2N2270
Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military
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BCY79
2N2218A
2N2904A
2N2219A
2N2905A
2N2221A
2N2906A
2N2222A
2N2907A
BFY50
2N2270
2N1893
2N2102
2N2405
2N4036
BFX84
BFX85
ZT86
ZT88
ZT91
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2n1711 complement
Abstract: bc140 2N2405 transistor 2n2270 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86
Text: NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The d evices s h o w n in th is ta b le are general purpose tran sisto rs desig ne d fo r sm all and m edium signal, lo w and m ed iu m p o w e r a m p lific a tio n from D.C. to rad io freq u e n cie s in C om m ercial,
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BC160
BFY50
2N1613
2N1711
ZT189
ZT211
BCY65E
1000t
BCY77
2n1711 complement
bc140
2N2405
transistor 2n2270
2N1893
2N2102
2N4036
BFX84
BFX85
ZT86
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2N1893
Abstract: 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92
Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military
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ZTX552
MPSA56
ZTX751
ZTX551
MPSA55
ZTX750
ZTX550
BC327A
BC327B
BC327C
2N1893
2N2102
2N2405
2N4036
BFX85
BSY55
ZT86
ZT88
ZT91
ZT92
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