BFX60
Abstract: Q60206-X60 H7B marking H7B transistor H7B* marking microphone
Text: SIEMENS BFX 60 NPN Silicon RF Transistor • For broadband amplifiers at collector currents up to 15 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFX 60 BFX 60 Q60206-X60 Pin Configuration 1 2
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BFX60
BFX60
Q60206-X60
023SbOS
fl23SbD5
H7B marking
H7B transistor
H7B* marking
microphone
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BFX90
Abstract: High-Voltage Amplifiers BFX91 BFX 50 G3168
Text: BFX90 BFX91 SILICON PLANAR PNP H IG H -VO LTA G E AM PLIFIERS The BFX 90 and BFX 91 are silicon planar epitaxial PNP transistors in Jedec T O -1 8 BFX 90 and Jedec T O -3 9 (BFX 91) metal cases. Both devices feature high voltage, high gain, low noise and excellent current gain linearity
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BFX90
BFX90
BFX91
G-3168
High-Voltage Amplifiers
BFX91
BFX 50
G3168
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PDF
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BFX90
Abstract: BFX91
Text: BFX90 BFX91 SILICON PLANAR PNP H IG H - V O L T A G E A M P L IF IE R S The BFX 90 and BFX 91 are silicon planar epitaxial PNP transistors in Jedec TO-18 BFX90 and Jedec TO-39 (BFX 911) metal cases. Both devices feature high voltage, high gain, low noise and excellent current gain linearity
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BFX90
BFX90
BFX91
G-2065
-10/uA
BFX91
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Transistor BFX 41
Abstract: Transistor BFX 25 Q60206-X55 B63310-A3004-X025 B63310 Scans-0010547
Text: B F X 55 N P N i-T ran sistor für V H F -E n d stu fe n in A ntennenverstärkern BFX 55 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 5 C 3 DIN 41 873 TO-39 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor BFX 55
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Q60206-X55
150mA
Transistor BFX 41
Transistor BFX 25
Q60206-X55
B63310-A3004-X025
B63310
Scans-0010547
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PDF
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BFX60
Abstract: Transistor BFX 90 bfx 63 Q60206-X60
Text: N PISI-Transistor für H F-Verstärkerstufen BFX 60 BFX 60 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 , jedoch mit abweichender Anschlußfolge. Die Anschlüsse sind vom Ge häuse elektrisch isoliert.
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BFX60
Q60206-X60
Transistor BFX 90
bfx 63
Q60206-X60
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BFX48
Abstract: No abstract text available
Text: BFX 48 SILICON PLANAR PNP HIG H-FREQ UENCY A M PLIFIER The BFX 48 is a silicon planar epitaxial PNP transistor in Jedec TO -18 metal case. It is suitable for a wide range of applications including low noise, low current high gain RF and wide band pulse amplifiers.
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BFX48
BFX48
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BFX59
Abstract: bfx 63 BFX69A BFX69
Text: BFX69 BFX69A SILICON PLANAR NPN G E N E R A L PURPOSE A M P L IF IE R S The BFX 69 and BFX 69A are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are designed fo r am plifier applications over a wide range o f voltage and current.
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BFX69A
BFX69
BFX59
bfx 63
BFX69A
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PDF
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BFX59
Abstract: Transistor BFX 25 BFX59F
Text: B F X 59 B F X 59 F N PIM -Transistoren fü r Treiber- und Endstu fen in A ntennenverstärkern BFX 59 und BFX 59F sind epitaktische NPN-Silizium-Planar-HF-Transistoren im Gehäuse 1 8 A 4 DIN 41876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Die Tran
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Q60206-X59
Q60206-X59-S5
BFX59
Transistor BFX 25
BFX59F
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BFX59
Abstract: transistor BFX59 transistor BC 336 kbr 1000 Transistor BFX 59
Text: BFX59 NPN Transistor for low-power driver and output stages in antenna amplifiers BFX 59 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41 876 TO-72 . The leads are electrically insulated from the case. BFX 59 is suitable for use in low -pow er amplifier, driver and power stages at frequencies up to the UHF range.
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BFX59
Q60206-X59
BFX59
transistor BFX59
transistor BC 336
kbr 1000
Transistor BFX 59
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transistor bfx 73
Abstract: BFX20 Transistor BFX 25
Text: BFX 20 SILICON PLANAR NPN 450 MHz LOW-NOISE, SMALL SIGNAL AMPLIFIER The BFX 20 is a high frequency silicon planar NPN transistor in Jedec T O -7 2 metal case. It is specifically designed fo r low noise, small signal am plifiers and is p a rticularly suitable fo r the
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BFX20
transistor bfx 73
BFX20
Transistor BFX 25
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BFX59
Abstract: Transistor BFX 25 BFX59F
Text: B F X 59 B F X 59 F N PIM -Transistoren fü r Treiber- und Endstu fen in A ntennenverstärkern BFX 59 und BFX 59F sind epitaktische NPN-Silizium-Planar-HF-Transistoren im Gehäuse 1 8 A 4 DIN 41876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Die Tran
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Q60206-X59
Q60206-X59-S5
BFX59
Transistor BFX 25
BFX59F
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PDF
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BFX40
Abstract: BFX41 BFX38 BFX39 BFX40-BFX41 BFY56A
Text: BFX 38 BFX 39 SILICON PLANAR PNP BFX 4? HIGH-VOLTAGE, GENERAL PURPOSE TYPES The B F X 3 8 , B F X 3 9 , B F X 4 0 a n d B F X 4 1 are silic o n p lanar e p ita x ia l PNP tran sisto rs in Jedec T O -3 9 m eta l case, designed fo r a w id e v a rie ty o f a p p lica tio n s. T h e y are p a rtic u la rly useful as
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BFX38,
BFX39,
BFX40
BFX41
BFY56A
BFX38
BFX40
BFX39
BFX41
temperatur500
BFX40-BFX41
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PDF
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BFX89
Abstract: F296 Q62702 Scans-0010548 transistor TO-72 Transistor BFX Transistor BFX 41
Text: NPIVI-Transistor fü r A n ten n en verstärker BFX 89 BFX 89 ist ein epitaktischer NPN-Silizium-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist für allge meine Anwendungen bis in den GHz-Bereich geeignet, z.B. für Antennen- und Hochfre
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BFX89
Q62702â
F296
Q62702
Scans-0010548
transistor TO-72
Transistor BFX
Transistor BFX 41
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Transistor BFX 90
Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
Text: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general
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23ShQS
Q62702-F296
Transistor BFX 90
transistor bfx 73
BFX 514
BFX89
b 514 transistor
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BFX38
Abstract: BFX39 BFX40 Transistor BFX 25 BFX41 BFY56A BFX40-BFX BFX40-BFX41
Text: BFX 38 BFX 39 E« «? SILICON PLANAR PNP H IG H - V O L T A G E , G E N E R A L P U R P O S E T Y P E S The B F X 3 8 , B F X 3 9 , B F X 4 0 and B FX 41 are silicon planar epitaxial PNP transistors in Jedec TO-39 metal case, designed for a wide variety of applications. They are particularly useful as
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BFX38,
BFX39,
BFX40
BFX41
BFY56A
BFX38
BFX39
BFX41
Transistor BFX 25
BFX40-BFX
BFX40-BFX41
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PDF
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tfk 325
Abstract: BFX340 bfx 34 tfk B tfk transistor BFX34
Text: W BFX 34 O Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: H ochstrom schalter, Relaistreiber, Leistungsverstärker, Strom bis 5 A Applications: High current switches, relay drivers, and p o w e r am plifiers, current up to 5 A
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toshiba dram
Abstract: TC5118165 TC5118165B tc5118165bj
Text: TOSHIBA DRAM Module AC Conditions No. 30 TC5118165BJ/BFX TC51V18165BJ/BFT Electrical Characteristics and Recommended AC Operating Conditions Notes 6,7,8 THMxxxxxx-70 MIN MAX MIN MAX UNIT NOTES 104 - 124 - ns - 60 - 70 ns 9, 13, 14 Access Time from CAS -
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TC5118165BJ/BFX
TC51V18165BJ/BFT
THMxxxxxx-60
THMxxxxxx-70
toshiba dram
TC5118165
TC5118165B
tc5118165bj
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PDF
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BFX62
Abstract: Transistor BFX 25 Transistor BFX 4 Transistor BFX
Text: BFX62 NPN Transistor for amplifier and oscillator stages up to 1 GHz BFX 62 is an NPN silicon planar transistor in a case 18A 4 DIN 41876 TO-72 . The leads are insulated from the case. The transistor is particularly suitable for amplifier and oscillator stages at frequencies up to 1 GHz.
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BFX62
Q60206-X
-C12e
BFX62
Transistor BFX 25
Transistor BFX 4
Transistor BFX
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PDF
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BFX60
Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
Text: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier
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BFX60
BFX60
Q60206-X
p21e
510Z5
bfx 63
transistor for RF amplifier
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PDF
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BFX80
Abstract: TO77
Text: Dey 80 SILICON PLANAR NPN/PNP LO W -LEVEL, LOW-NOISË COM PLEM ENTARY AM PLIFIER The BFX 80 is a six terminal device containing anNPN/PNP com plem entary pair o f isolated silicon planar epitaxial transistors in Jedec T O -7 7 metal case. This device is particularly
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VcE30
100MA
BFX80
TO77
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PDF
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BFX48
Abstract: No abstract text available
Text: BFX48 SILICON PLANAR PNP H IGH-FREQUENCY AMPLIFIER The BFX 48 is a silicon planar epitaxial PNP transistor in Jedec T O -1 8 metal case. It is suitable fo r a wide range o f applications including lo w noise, low current high gain RF and wide band pulse am plifiers.
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BFX48
BFX48
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PDF
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npntransistor
Abstract: BFX62
Text: BFX 62 Nicht für N euentw icklung N P N -Transisto r für regelbare V erstärker und O szillatorstufen bis 1 G H z B FX 62 ist ein NPN-Silizium-Planar-HF-Transistor im Gehäuse 18A4 DIN 41 876 TO -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert.
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BFX62
Q60206-X62
npntransistor
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PDF
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BFY90
Abstract: BFX89 89-1-c Transistor BFX 25 G-1932
Text: BFY90 BFX89 SILICON PLANAR NPN W IDE B A N D V H F /U H F A M P L IF IE R S The BFX 89 and BFY 90 are silicon planar epitaxial NPN transistors in Jed ecT O -72 metal case, particularly designed fo r wide band com m o n-e m itter linear am plifier applications up
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BFY90
BFX89
G-1932
G-11133
BFX89
89-1-c
Transistor BFX 25
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PDF
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3004x
Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
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fl23SbOS
0G04737
Q60206-X55
BFX55
23SbOS
150mA
3004x
SIEMENS B 58 451
GE 639 transistor
2114D
transistor bfx 73
STATIC RAM 2114
Q2114
tic 2116 M
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