Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55V1664BJ/BFT-1Q,-12 T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A TE C M O S 65,536-W ORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as
|
OCR Scan
|
PDF
|
TC55V1664BJ/BFT-1Q
16-BIT
TC55V1664BJ/BFT
10172M7
TC55V1664BJ/BFT-10
|
TC5118165
Abstract: TC5118165BFT
Text: INTEGRATED TO SH IB A M O S D IG ITA L INTEG RATED CIRCUIT CIRCUIT T C 5 1 1 8 1 6 5 BJ / B F T - 60 T C 5 1 1 8 1 6 5 BJ / BFT - 70 TOSHIBA TECHNICAL TE N TA TIV E D A T A 1 ,0 4 8 ,5 7 6 W O R D x DATA SILICON GATE C M O S 16 BIT HYPER PAGE ED O D Y N A M IC R A M
|
OCR Scan
|
PDF
|
TC5118165BJ/BFT
TC511
SOJ42
TC5118165BJ-32
TC5118165
35MAX
TC5118165BFT
|
Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUIT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC514260BJ / BZ/ BFT/ BTR - 70 TC514260BJ / BZ / BFT / BTR - 80 TC514260BJ / BZ / BFT / BTR -1 0 SILICON GATE CMOS TECHNICAL DATA TENTATIVE DATA 262,144 W ORD x 16 BIT DYNAM IC RAM DESCRIPTION
|
OCR Scan
|
PDF
|
TC514260BJ
TC514260BJ/BZ/BFT/BTR
TC514260BJâ
|
BFT66
Abstract: BFT 66 S1 Q62702-F456 nf5102 6NF20 BA 758 BFT67 Q62702-F457 QQQM710
Text: asc » â23SbüS ÜGGM7Qâ 1 M S I E â BFT 66 BFT 67 Extremely Low Noise NPN Silicon Broadband Transistors r l_r SIEMENS AKTIENGESELLSCHAF BFT 6 6 and BFT 6 7 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 1 8 A 4 DIN 4 1 8 7 6 ), intended for input stage applications in extremely low-noise broadband
|
OCR Scan
|
PDF
|
23SbQS
Q62702-F456
Q62702-F457
BFT66,
BFT67
103MHz
fi535b05
DQ0H715
BFT66
BFT67
BFT 66 S1
Q62702-F456
nf5102
6NF20
BA 758
Q62702-F457
QQQM710
|
Untitled
Abstract: No abstract text available
Text: 1 ,048,576 W O R D x PRELIMINARY 1 BIT D Y N A M IC R A M DESCRIPTION 511000 The TC BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
|
OCR Scan
|
PDF
|
TC511000BP/BJ/BZ/BFT
TC5110OOBP/BJ
/BZ/BFT-60
|
Untitled
Abstract: No abstract text available
Text: m c,cn724ñ 0020333 ñTT “ - TOSHIBA TC51V17405BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO HYPER PAGE DYNAMIC RAM Description gs TheTC51V17405BSJ/BFT is an EDO (hyper page) dynamic RAM organized as 4,194,304 words by 4 bits. The «- o «
|
OCR Scan
|
PDF
|
TC51V17405BST-60/70
TheTC51V17405BSJ/BFT
TC51V17405BSJ/BFT
300mil)
0D2fl340
|
TC5117405
Abstract: No abstract text available
Text: DRAM Module AC Conditions No. 31 TC5117405BSJ/BST, TC5117445BSJ/BST TC51V17405BST/BST, TC51V17445BSJ/BST Electrical Characteristics and Recommended AC Operating Conditions Notes 6,7,8 THMxxxxxx-70 MIN MAX MIN MAX UNIT NOTES 104 - 124 - ns - 60 - 70 ns 9, 13, 14
|
OCR Scan
|
PDF
|
TC5117405BSJ/BST,
TC5117445BSJ/BST
TC51V17405BST/BST,
TC51V17445BSJ/BST
THMxxxxxx-60
THMxxxxxx-70
TC5117405
|
tc5118165bj
Abstract: TC5118165B TC5118165 ct rac 70 TC5118165BFT
Text: TOSHIBA TC5118165BJ/BFT60/70 PRELIM INARY 1,048,576 W O RD X 16 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat
|
OCR Scan
|
PDF
|
TC5118165BJ/BFT60/70
TC5118165BJ/BFT
TC5118165BJ/
DR16160695
TC5118165B
J/BFT-60/70
B-119
tc5118165bj
TC5118165
ct rac 70
TC5118165BFT
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC55V8128BJ/BFT-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8128BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s
|
OCR Scan
|
PDF
|
TC55V8128BJ/BFT-10
072-WORD
TC55V8128BJ/BFT
32-pin
SOJ32-P-400-1
32-P-400-0
|
2f5 transistor
Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
Text: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 DIN 41869 , intended fo r use in low-noise input and intermediate stages in RF
|
OCR Scan
|
PDF
|
a23SbOS
2f5 transistor
Transistor BFT 99
TIC 122 Transistor
2SC 2090
Transistor BFT 44
U/25/20/TN26/15/850/BFT75
|
Untitled
Abstract: No abstract text available
Text: q0^724fl 0020422 RTS TOSHIBA TC51V16325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V16325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V16325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as weil as advanced circuit techniques to pro
|
OCR Scan
|
PDF
|
724fl
TC51V16325BJ/BFT-70
TC51V16325BJ/BFT
16325B
400mil)
|
toshiba tc55
Abstract: FT-10 SOJ32-P-400-1 TC55 TC55V8128BJ
Text: TOSHIBA TC55V8128BJ/BFT-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8128BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s
|
OCR Scan
|
PDF
|
V8128B
FT-10
072-WORD
TC55V8128BJ/BFT
32-pin
toshiba tc55
SOJ32-P-400-1
TC55
TC55V8128BJ
|
TC5118160B
Abstract: No abstract text available
Text: TOSHIBA clüi:î7E4fi 0 0 20 3 0 1 552 • TC5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description Features 16M The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The T C 51 18160BJ/BFT
|
OCR Scan
|
PDF
|
TC5118160BJ/BFT-60/70
5118160BJ/BFT
18160BJ/BFT
0D2fi367
TC5118160B
|
Untitled
Abstract: No abstract text available
Text: ^ 7 2 4 0 TOSHIBA QQEÛ37B 54T TC5118165BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT HYPER PAGE EDO DYNAMIC RAM in Description The T C 5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The TC 5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat
|
OCR Scan
|
PDF
|
TC5118165BJ/BFT-60/70
5118165BJ/BFT
5118165BJ/
DR16160695
|
|
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TCH TSH ñ 0 0 2 0 4 1 3 • TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description Features 16M The T C 51 18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The T C 51 18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro
|
OCR Scan
|
PDF
|
TC5118325BJ/BFT-70
18325BJ/BFT
5118325B
400mil)
I/032
|
TC5118325B
Abstract: mx c511 tc5118325
Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 W ORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/ BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
|
OCR Scan
|
PDF
|
TC5118325BJ/BFT-70
TC5118325BJ/BFT
TC5118325BJ/
400mil)
J/BFT-70
DR16220995
TC5118325B
mx c511
tc5118325
|
D 795 A
Abstract: No abstract text available
Text: MODELS Band H Carbon Film Resistors General Purpose, High Voltage F EATU R ES • S in gle units to 10 W, 40 KV, + 5% and m atched pairs BP to 20 W , 80 KV, + 1% • Radial lug or axial lead • S upplied w ith Mylar heat sh rin k pro te ctive sle e ve .002" [.051 m m ] th ick
|
OCR Scan
|
PDF
|
|
TC514266
Abstract: No abstract text available
Text: PRELIMINARY 2 6 2 , 1 4 4 \ vCi <L- k 4 i ' T' L ; Y ' ; a !V":C ?, a w ! D ESC RIPTIO N T he "I C i i i -T 7. b i: * .„h? new g ^ r.crau o n dynam ic HAM organized 262,144 words by 4 bits. T he TC51.4-r;i-!BP.BJ,'BZ.“siF;' .• 1 : > TOSHIBA'S CMOS Silicon gate process technology as well as
|
OCR Scan
|
PDF
|
14266BP/BJ/BZ/BFT
TC514266
|
Untitled
Abstract: No abstract text available
Text: - 1 ! 2SC » • 023SbOS 0004701 I H S I E 6 u‘ NPN Silicon RF Broadband Transistor SIEMENS AKTIENfiESELLSCHAF . D T~3/~13 BFT 12 —1 BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to
|
OCR Scan
|
PDF
|
023SbOS
Q62702-F390
|
SOJ44-P-400-1
Abstract: TC55V1664BFT SOJ44-P-4QO-1 i2124
Text: TOSHIBA TC55V1664BJ/BFT-8 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s
|
OCR Scan
|
PDF
|
TC55V1664BJ/BFT-8
536-WORD
16-BIT
TC55V1664BJ/BFT
SOJ44-P-4QO-1
44-P-400-0
SOJ44-P-400-1
TC55V1664BFT
i2124
|
TC51V18325BJ
Abstract: No abstract text available
Text: TOSHIBA TC51V18325BJ/BFIW70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V18325BJ/BFT' is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to
|
OCR Scan
|
PDF
|
TC51V18325BJ/BFIW70
TC51V18325BJ/BFT'
TC51V18325BJ/BFT
400mil)
DR16230995
I/024
I/025
I/032
TC51V18325BJ
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA TC55V1664BJ/BFT-8 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s
|
OCR Scan
|
PDF
|
TC55V1664BJ/BFT-8
536-WORD
16-BIT
TC55V1664BJ/BFT
SOJ44-P-400-1
44-P-400-0
|
Untitled
Abstract: No abstract text available
Text: • ^0^7 246 002Ô431 *îOÔ ■ - TC51V18325BJ/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM 16M DRAM Description TheTC51V18325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 w ords by 32 bits. The TC51V18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to
|
OCR Scan
|
PDF
|
TC51V18325BJ/BFT-60/70
TheTC51V18325BJ/BFT
TC51V18325BJ/BFT
400mii)
400mil)
tem01
|
Untitled
Abstract: No abstract text available
Text: T O S H IB A TC55V8128BJ/BFT-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-W ORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8128BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s
|
OCR Scan
|
PDF
|
TC55V8128BJ/BFT-10
TC55V8128BJ/BFT
SOJ32-P-400-1
32-P-400-0
67TYP
|