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    BFR91 NPN 6 GHZ WIDEBAND TRANSISTOR Search Results

    BFR91 NPN 6 GHZ WIDEBAND TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BFR91 NPN 6 GHZ WIDEBAND TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFR93 application note

    Abstract: transistor BFR93 BFR91 application note bfr93 BFR91 BFT93 MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93 NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93


    Original     		PDF BFR93 BFT93. MSB003 SCA55 127127/00/02/pp12 BFR93 application note transistor BFR93 BFR91 application note bfr93 BFR91 BFT93 MSB003

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors ^ 5 3 ^ 3 1 0D31815 W5 APX Product specification NPN 5 GHz wideband transistor ^ BFR91 N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial


    OCR Scan     		PDF 0D31815 BFR91 BFR91/02 ON4186)

    transistor BFR91

    Abstract: BFR91 transistor CR NPN BFR91 philips
    Text: Philips Semiconductors Product specification '- P NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE J> PIN 7 711002b PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial amplifiers, radar systems,


    OCR Scan     		PDF ON4186) BFQ23. 31-I7 BFR91 BFR91 DQ457Dfl transistor BFR91 transistor CR NPN BFR91 philips

    transistor BFR91

    Abstract: BFR91 transistor BFR91 philips bfq23 BFQ23 BFR91 NPN 6 GHz Wideband Transistor
    Text: P hilips Sem iconductors Product specification 7= -3 / ' / 7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION £ SbE D 7110ö2ti 004.5704 T^O * P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use In RF amplifiers such as in aerial


    OCR Scan     		PDF BFR91 ON4186) BFQ23. 7110fi2Li BFR91/02 7110flEb D0457GA transistor BFR91 BFR91 transistor BFR91 philips bfq23 BFQ23 BFR91 NPN 6 GHz Wideband Transistor

    BFR91

    Abstract: BFR91 philips transistor BFR91 BFR91 transistor BFR91 NPN 6 GHz Wideband Transistor BFQ23
    Text: Philips Semiconductors Product specification '7 = - 3 /- /7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFR91 Sh E J> 7 1 1 0 0 5 k 004.5704 T^O M P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily Intended for use in RF amplifiers such as in aerial


    OCR Scan     		PDF BFR91 ON4186) BFQ23. 711062L, BFR91/02 711Qfl2b DQMS70Ã BFR91 philips transistor BFR91 BFR91 transistor BFR91 NPN 6 GHz Wideband Transistor BFQ23

    transistor BFR91

    Abstract: BFR91 transistor BFR91 BFR91 parameter S BFR91 NPN 6 GHz Wideband Transistor BFQ23 DDB161B MEM530
    Text: Philips Semiconductors bb53^31 0 0 3 1 Ô1 5 4 T5 M APX Product specification NPN 5 GHz wideband transistor ^ ^ BFR91 b'iE T> N AMER PHILIPS/DISCRETE DESCRIPTION PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use In RF amplifiers such as in aerial


    OCR Scan     		PDF BFR91 ON4186) BFQ23. BFR91/02 Q031fl1^ transistor BFR91 BFR91 transistor BFR91 BFR91 parameter S BFR91 NPN 6 GHz Wideband Transistor BFQ23 DDB161B MEM530

    QS 100 NPN Transistor

    Abstract: transistor BFR93 L7E transistor BFR93 BFR91 BFT93 BFR91 NPN 6 GHz Wideband Transistor
    Text: • P hilips Sem iconductors •— bb S3 T3 1 D0 25 17 5 254 « A P X N AUER P H I L I P S / D I S C R E T E Product specification b7E NPN 5 GHz wideband transistor DESCRIPTION fc BFR93 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use


    OCR Scan     		PDF bbS3T31 D025175 BFR93 ON4186) BFT93. QS 100 NPN Transistor transistor BFR93 L7E transistor BFR93 BFR91 BFT93 BFR91 NPN 6 GHz Wideband Transistor

    BFR93

    Abstract: BFR91 BFT93 choke 3122 108 20150 ScansUX40 transistor bfr93 TRANSISTOR B47
    Text: Philips Semiconductors 711002t D D b 'iim T3Û PH I N Product specification NPN 5 G Hz w ideband transistor DESCRIPTION £ BFR93 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The transistor features very low


    OCR Scan     		PDF 711005t BFR93 ON4186) BFT93. 711002b BFR91 BFT93 choke 3122 108 20150 ScansUX40 transistor bfr93 TRANSISTOR B47

    BFR91 philips

    Abstract: No abstract text available
    Text: bbS3T31 0025175 2S4 M A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Product specification b7E » £ BFR93 DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The


    OCR Scan     		PDF bbS3T31 BFR93 ON4186) BFT93. BFR91 philips

    bfr93

    Abstract: DBFR93 T-989 BFR91 BFT93 sot-23 marking jn T-31-17
    Text: N AMER PHILIPS/DISCRETE S5E D • ^53^31 QGlfiG7S Q ■ BFR93 T -3I-I7 N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a SOT-23 plastic envelope. It is primarily intended fo r use in u.h.f. and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems, oscilloscopes,


    OCR Scan     		PDF BFR93 OT-23 BFT93. T-31-17 bfr93 DBFR93 T-989 BFR91 BFT93 sot-23 marking jn T-31-17

    4000 npn

    Abstract: 122e
    Text: 56 RF/Microwave Devices RF Wideband Transistors Type No. BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 BFQ149 BFQ270 BFQ621 BFQ741 BFR53 BFR90 BFR90A BFR91 BFR91A BFR92 BFR92A BFR92AW BFR93 BFR93A BFR93AW BFR94A BFR95 BFR96 BFR96S BFR106


    OCR Scan     		PDF BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 4000 npn 122e

    BFG591 amplifier

    Abstract: SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic
    Text: Philips Semiconductors Semiconductors for Telecom systems Selection List General For further information, refer to Data Handbook S C 1 4,1993; "RF Wideband Transistors", except otherwise specified. RF wideband transisto rs March 1993 14 Philips Semiconductors


    OCR Scan     		PDF OT122 OT143 OT223 OT323 BFS17W BFG17A BFG16A BF547W BF747W BFT25 BFG591 amplifier SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic

    Untitled

    Abstract: No abstract text available
    Text: 7 1 1 0 0 2 b O C I b ^m a Philips Sem iconductors 2T2 RHIN Product specification NPN 6 GHz wideband transistor FEATURES BFR93A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2 emitter • PNP complement is the BFT93.


    OCR Scan     		PDF BFR93A BFT93.

    transistor 667

    Abstract: No abstract text available
    Text: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2


    OCR Scan     		PDF BFR93A BFT93. transistor 667

    BFR91 spice parameters

    Abstract: BF 194 transistor Philips FA 261 equivalent transistor of bfr93a SOT23 R2P transistor BFR93A 993 395 pnp npn BFT93 L7E transistor BFR93A
    Text: • bb53^31 0QB51fl2 MTM ■ APX Philips Semiconductors Product specification AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES BFR93A e PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 2 emitter


    OCR Scan     		PDF 0QB51fl2 BFR93A BFT93. feedback00 BFR91 spice parameters BF 194 transistor Philips FA 261 equivalent transistor of bfr93a SOT23 R2P transistor BFR93A 993 395 pnp npn BFT93 L7E transistor BFR93A

    MMBR930

    Abstract: tc 1150b MRF911 equivalent 1150B motorola g18 MRF911 2N6604 BFR91 MRF914 motorola transistor 0063
    Text: MOTOROLA SC XSTRS/R F 4bE D b3b?254 0 0 1 4 1 5 1 3 • MOTb MOTOROLA ■ SEMICONDUCTOR - TECHNICAL DATA P 3 2N6604 Th e R F L in e NF * 2.7 dB « 1 .0 GHz HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for use in high-frequency, low-noise, small-signal,


    OCR Scan     		PDF DQ141S1 2N6604 Symbo73 MMBR930 tc 1150b MRF911 equivalent 1150B motorola g18 MRF911 2N6604 BFR91 MRF914 motorola transistor 0063

    MRF911

    Abstract: F914 2N6604
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA 2N6604 The RF Line N F « 2.7 dB 1.0 GHz HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR .d e s ig n e d for use in high-frequency, low-noise, small-signal, narrow and wideband amplifiers. Ideal fo r use in m icrostrip th in


    OCR Scan     		PDF 2N6604 IS22I MRF911 F914 2N6604

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BF547A

    Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
    Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS


    OCR Scan     		PDF LCD01 BF547A transistor bf 175 BFG65 equivalent BF547B BFG25AXD

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn

    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


    OCR Scan     		PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor