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    BFR280 Price and Stock

    Temic Semiconductors BFR280T(RE)GS08_12

    RF SMALL SIGNAL BIPOLAR TRANSISTOR, 0.01A I(C), 1-ELEMENT, L BAND, SILICON, NPN (Also Known As: BFR280T)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BFR280T(RE)GS08_12 4,044
    • 1 $0.2
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    • 1000 $0.09
    • 10000 $0.065
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    BFR280T(RE)GS08_12 4,044
    • 1 $0.2
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    Infineon Technologies AG BFR280W E6327

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BFR280W E6327 1,964
    • 1 $0.72
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    • 100 $0.72
    • 1000 $0.288
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    Infineon Technologies AG BFR280W

    Bipolar Junction Transistor, NPN Type, SOT-323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BFR280W 351
    • 1 $0.36
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    • 100 $0.24
    • 1000 $0.168
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    Vishay Intertechnologies BFR280TWGS08

    Electronic Component
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    ComSIT USA BFR280TWGS08 12,000
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    Siemens BFR280E-6327

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange BFR280E-6327 726
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    Find more BFR280 price and stock on Findchips.com

    BFR280 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFR280 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR280 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFR280 Siemens NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) Original PDF
    BFR280 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR280E6327 Infineon Technologies TRANS GP BJT NPN 8V 0.01A Original PDF
    BFR280E6433 Infineon Technologies TRANS GP BJT NPN 8V 0.01A Original PDF
    BFR280T Vishay Intertechnology Silicon NPN Planar RF Transistor Original PDF
    BFR280T Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFR280T-GS08 Vishay TRANS GP BJT NPN 8V 0.01A Original PDF
    BFR280TW Vishay Intertechnology Silicon NPN Planar RF Transistor Original PDF
    BFR280W Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR280W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFR280W Siemens NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems Original PDF
    BFR280W Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR280WE6327 Infineon Technologies TRANS GP BJT NPN 8V 0.01A 3 Original PDF

    BFR280 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFS480

    Abstract: F150 SOT23 5 BFR280 BFR280W Siemens rf power transistors F450
    Text: Application Note No. 032 Discrete & RF Semiconductors BFR280, BFR280W and BFS480 in Pager Applications This application note provides additional information to the data sheet for low voltage and low current applications. At frequencies below 500 MHz BFR280 in SOT-23 package, BFR280W in SOT-323 package


    Original     		PDF BFR280, BFR280W BFS480 BFR280 OT-23 OT-323 OT-363 de/semiconductor/products/35/35 F150 SOT23 5 Siemens rf power transistors F450

    Untitled

    Abstract: No abstract text available
    Text: BFR280T / BFR280TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Low power applications • Low noise figure • High transition frequency 3 2 Applications 1 For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA.


    Original     		PDF BFR280T BFR280TW OT-23 BFR280TW OT-323 D-74025 30-Aug-04

    Untitled

    Abstract: No abstract text available
    Text: BFR280W NPN Silicon RF Transistor 3  For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m  fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR280W VSO05561 OT323

    96275

    Abstract: BFR280W VSO05561
    Text: BFR280W NPN Silicon RF Transistor 3  For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m  fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR280W VSO05561 OT323 900MHz Jun-27-2001 96275 BFR280W VSO05561

    Untitled

    Abstract: No abstract text available
    Text: BFR280T / BFR280TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Low power applications Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


    Original     		PDF BFR280T BFR280TW 2002/95/EC 2002/96/EC OT-23 BFR280TW OT-323 D-74025 29-Apr-05

    BFR280T

    Abstract: No abstract text available
    Text: BFR280T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications D Low noise figure


    Original     		PDF BFR280T D-74025 17-Apr-96 BFR280T

    BFR280T

    Abstract: No abstract text available
    Text: BFR280T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features


    Original     		PDF BFR280T D-74025 BFR280T

    BFR280T

    Abstract: BFR280TW
    Text: BFR280T/BFR280TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications


    Original     		PDF BFR280T/BFR280TW BFR280T BFR280TW D-74025 20-Jan-99

    BFR280T

    Abstract: telefunken IC
    Text: BFR280T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications D Low noise figure


    Original     		PDF BFR280T D-74025 17-Apr-96 BFR280T telefunken IC

    BFR280T

    Abstract: BFR280TW
    Text: BFR280T/BFR280TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications


    Original     		PDF BFR280T/BFR280TW BFR280T BFR280TW D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: BFR280T/BFR280TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications


    Original     		PDF BFR280T/BFR280TW BFR280T BFR280TW D-74025 20-Jan-99

    BFR280TW

    Abstract: BFR280T
    Text: BFR280T / BFR280TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Low power applications Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


    Original     		PDF BFR280T BFR280TW 2002/95/EC 2002/96/EC BFR280T OT-23 OT-323 08-Apr-05 BFR280TW

    BFR280TW

    Abstract: No abstract text available
    Text: BFR280TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications D Low noise figure


    Original     		PDF BFR280TW D-74025 11-Oct-96 BFR280TW

    Untitled

    Abstract: No abstract text available
    Text: BFR280 NPN Silicon RF Transistor 3  For low noise, low-power amplifiers in mobile communications systems pager, cordless telephone at collector currents from 0.2 mA to 8 m  fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR280 VPS05161

    BFR280T

    Abstract: BFR280TW
    Text: BFR280T/BFR280TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features D Low power applications


    Original     		PDF BFR280T/BFR280TW BFR280T BFR280TW D-74025 20-Jan-99

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    siemens spc 2

    Abstract: Statistical 800MHZ smd transistor marking cf front of fabrication process smd ic marking HL
    Text: Quality Specification 1 Quality Management Delivering quality means for the subdivision Discrete and RF Semiconductors in accordance with “top with TQM ”. To fulfill or exceed the present and future requirements of our customers. In order to achieve full customer satisfaction HL HF pursues the strategy of continuous


    Original     		PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    Untitled

    Abstract: No abstract text available
    Text: Tem ic BFR280T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor E le c tro s ta tic se n s itiv e d ev ice. O b se rv e p re c a u tio n s fo r h a n d lin g . Applications F o r lo w -n o is e a n d h ig h -g a in b ro a d b a n d a m p lifie rs a t c o lle c to r c u rre n ts fro m 0 .2 m A to 8 m A .


    OCR Scan     		PDF BFR280T

    Untitled

    Abstract: No abstract text available
    Text: BFR280T/BFR280TW ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For low noise and high gain broadband am plifiers at


    OCR Scan     		PDF BFR280T/BFR280TW 280TW D-74025 20-Jan-99

    S852T

    Abstract: BF579 T0-50 BF964S BF96 BFP183T
    Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15


    OCR Scan     		PDF BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T

    s525

    Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T
    Text: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52


    OCR Scan     		PDF BF569 BF579 BF961 BF964S BF966S BF970 BF979 BF988 BF994S BF995 s525 s918 bfr96ts S858TA3 BF-970 BFP183T

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


    OCR Scan     		PDF O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor