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    Infineon Technologies AG BFR182WH6327XTSA1

    RF TRANS NPN 12V 8GHZ PG-SOT-323
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    DigiKey BFR182WH6327XTSA1 Cut Tape 99,133 1
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    Infineon Technologies AG BFR181WH6327XTSA1

    RF TRANS NPN 12V 8GHZ PG-SOT-323
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    DigiKey BFR181WH6327XTSA1 Digi-Reel 22,720 1
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    Newark BFR181WH6327XTSA1 Reel 27,000 9,000
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    Infineon Technologies AG BFR183E6327HTSA1

    RF TRANS NPN 12V 8GHZ SOT-23
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    DigiKey BFR183E6327HTSA1 Cut Tape 17,351 1
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    BFR183E6327HTSA1 Digi-Reel 17,351 1
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    Infineon Technologies AG BFR182E6327HTSA1

    RF TRANS NPN 12V 8GHZ SOT-23
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    DigiKey BFR182E6327HTSA1 Digi-Reel 10,297 1
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    BFR182E6327HTSA1 Cut Tape 10,297 1
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    Rochester Electronics BFR182E6327HTSA1 127,299 1
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    Infineon Technologies AG BFR181E6327HTSA1

    RF TRANS NPN 12V 8GHZ SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFR181E6327HTSA1 Digi-Reel 7,325 1
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    Find more BFR18 price and stock on Findchips.com

    BFR18 Datasheets (122)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFR18 Micro Electronics Semiconductor Device Data Book Scan PDF
    BFR18 Micro Electronics Medium Power Amplifiers and Switches Scan PDF
    BFR18 Micro Electronics Medium Power Amplifiers and Switches Scan PDF
    BFR18 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BFR18 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR18 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFR18 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BFR18 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFR18 Unknown Transistor Replacements Scan PDF
    BFR18 Unknown Transistor Replacements Scan PDF
    BFR18 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFR18 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFR18 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFR18 Semico Medium Power Transistors Scan PDF
    BFR18 SGS-Ates Shortform Data Book 1977/78 Short Form PDF
    BFR18 SGS-Ates Small Signal Transistors 3rd Edition 1978 Scan PDF
    BFR18 SGS-Ates Semiconductor Data Book 1976/77 Scan PDF
    BFR18 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BFR180 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR180 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    ...

    BFR18 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic BFR182T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. *" Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features


    OCR Scan     		BFR182T 17-Apr-96 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR182T/BFR182TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure


    Original     		BFR182T/BFR182TW BFR182T BFR182TW D-74025 20-Jan-99 PDF

    BCR108T

    Abstract: BFR181T SC75
    Text: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR181T BCR108T BFR181T SC75 PDF

    87757

    Abstract: BFR181 BCW66
    Text: BFR181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR181 87757 BFR181 BCW66 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ BFR182T/BFR182TW VfSMAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For low noise and high gain broadband am plifiers at co lle ctor currents from 1 mA to 20 mA.


    OCR Scan     		BFR182T/BFR182TW 182TW D-74025 20-Jan-99 PDF

    BFR18

    Abstract: jca amplifier
    Text: BFR18 SILICON PLANAR NPN H IG H -VO LTA G E , H IG H -C U R R E N T A M PLIFIER The BFR 18 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. This device is designed for amplifier applications over a wide range of voltage and current.


    OCR Scan     		BFR18 BFR18 20MHz 300jus, jca amplifier PDF

    1 R 4254

    Abstract: BFR182 BCW66 infineon marking code L2
    Text: BFR182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		BFR182 1 R 4254 BFR182 BCW66 infineon marking code L2 PDF

    bfr180

    Abstract: 61V8
    Text: BFR180 NPN Silicon RF Transistor 3  For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 mA to 2.5 mA  fT = 7 GHz 2 F = 2.1 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR180 VPS05161 900MHz Jun-27-2001 bfr180 61V8 PDF

    BFR181T

    Abstract: SC75
    Text: BFR181T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR181T VPS05996 900MHz Aug-09-2001 BFR181T SC75 PDF

    BFR182T

    Abstract: SC75
    Text: BFR182T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR182T VPS05996 900MHz Aug-09-2001 BFR182T SC75 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR183TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		BFR183TF OT-490 D-74025 28-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR181T / BFR181TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Low noise figure • High power gain Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. 3 2 1 Mechanical Data


    Original     		BFR181T BFR181TW OT-23 BFR181TW OT-323 D-74025 30-Aug-04 PDF

    BFR183T

    Abstract: Telefunken
    Text: BFR183T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure D High power gain


    Original     		BFR183T D-74025 17-Apr-96 BFR183T Telefunken PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR182T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR182T VPS05996 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR183T NPN Silicon RF Transistor Preliminary data 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		BFR183T VPS05996 PDF

    BFR183TF

    Abstract: No abstract text available
    Text: BFR183TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		BFR183TF OT-490 OT-490 D-74025 30-Aug-04 BFR183TF PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR183W Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 3 2 1 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free RoHS compliant and halogen-free package with visible leads


    Original     		BFR183W AEC-Q101 OT323 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR181W Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 1 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Easy to use Pb-free RoHS compliant and halogen free industry standard package with visible leads


    Original     		BFR181W AEC-Q101 OT323 PDF

    AN077

    Abstract: BCR108W BFR181W
    Text: BFR181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 1 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		BFR181W OT323 AN077 BCR108W BFR181W PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR181 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		BFR181 AEC-Q101 PDF

    BFR182T

    Abstract: BFR182TW
    Text: BFR182T/BFR182TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure


    Original     		BFR182T/BFR182TW BFR182T BFR182TW D-74025 20-Jan-99 PDF

    BFR183T

    Abstract: BFR183TW
    Text: BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure


    Original     		BFR183T/BFR183TW BFR183T BFR183TW D-74025 20-Jan-99 PDF

    BFR181T

    Abstract: BFR181TW
    Text: BFR181T/BFR181TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features D Low noise figure


    Original     		BFR181T/BFR181TW BFR181T BFR181TW D-74025 20-Jan-99 PDF

    BFR182T

    Abstract: BFR182TW
    Text: BFR182T/BFR182TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low noise figure


    Original     		BFR182T/BFR182TW BFR182T BFR182TW D-74025 20-Jan-99 PDF