BFR 36.2 Search Results

BFR 36.2 Result Highlights (5)

Part	Manufacturer	Description
74FCT241CTP	Renesas Electronics Corporation	NON-INV OCT/BFR LNE/DRVR
5962-9223201MRA	Renesas Electronics Corporation	NON-INV OCT/BFR LNE/DRVR
54FCT241TDB	Renesas Electronics Corporation	NON-INV OCT/BFR LNE/DRVR
74FCT241CTSO	Renesas Electronics Corporation	NON-INV OCT/BFR LNE/DRVR
74FCT241CTSO8	Renesas Electronics Corporation	NON-INV OCT/BFR LNE/DRVR

BFR 36.2 Price and Stock

Filter by Manufacturer


ITT Interconnect Solutions BFR36-2011-46P-1-F80 CONN 5015 CIRC PIN 27 POS CRMP ST BLKHD - Bulk (Alt: BFR36-2011-46P-1-F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	BFR36-2011-46P-1-F80	Bulk		25 Weeks, 5 Days	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
	BFR36-2011-46P-1-F80	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

BFR 36.2 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BFR 965 Abstract: BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705 Text: NPN Silicon RF Transistor BFR 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!	Original	PDF	Q62702-F1315 OT-23 BFR 965 BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705
Q62702-F1494 Abstract: No abstract text available Text: BFR 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	900MHz OT-323 Q62702-F1494 Dec-11-1996 Q62702-F1494
MJE 280 power transistor Abstract: Q62702-F1298 bfr280 Text: BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	900MHz OT-23 Q62702-F1298 Dec-11-1996 MJE 280 power transistor Q62702-F1298 bfr280
BFR91 Abstract: Transistor BFR 90 application transistor BFR91 Text: BFR 91 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR91 Marking Plastic case XTO 50	Original	PDF	BFR91 D-74025 Transistor BFR 90 application transistor BFR91
Transistor BFR 90 application Abstract: BFR90A Transistor BFR 35 Transistor BFR 90 693 071 010 811 Text: BFR 90 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR90A Marking Plastic case XTO 50	Original	PDF	BFR90A D-74025 Transistor BFR 90 application Transistor BFR 35 Transistor BFR 90 693 071 010 811
4934N Abstract: No abstract text available Text: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS	Original	PDF	NTMFS4934N NTMFS4934N/D 4934N
4934N Abstract: NTMFS4934N 362 N MOSFET NTMFS4934NT1G Text: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS	Original	PDF	NTMFS4934N NTMFS4934N/D 4934N 362 N MOSFET NTMFS4934NT1G
SO8F Abstract: No abstract text available Text: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS	Original	PDF	NTMFS4934N NTMFS4934N/D SO8F
VSO05561 Abstract: No abstract text available Text: BFR 280W NPN Silicon RF Transistor 3 For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	VSO05561 OT-323 900MHz Oct-25-1999 VSO05561
Untitled Abstract: No abstract text available Text: BFR 280 NPN Silicon RF Transistor 3 For low noise, low-power amplifiers in mobile communications systems pager, cordless telephone at collector currents from 0.2 mA to 8 m fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	VPS05161 OT-23 900MHz Oct-25-1999
4934N Abstract: NTMFS4934NT1G NTMFS4934N Text: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS	Original	PDF	NTMFS4934N NTMFS4934N/D 4934N NTMFS4934NT1G NTMFS4934N
4934N Abstract: No abstract text available Text: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS	Original	PDF	NTMFS4934N NTMFS4934N/D 4934N
Untitled Abstract: No abstract text available Text: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 83350E Multi-Conductor - MIL-W-16878/4 Type E For more Information please call 1-800-Belden1 Description: 20 AWG stranded (19x32) silver-plated copper conductors, cabled and color-coded, extruded TFE Teflon	Original	PDF	83350E MIL-W-16878/4 1-800-Belden1 19x32) 19x32 Megaohms/1000 73/23/EEC) 93/68/EEC.
Untitled Abstract: No abstract text available Text: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 8916 Hook-up/Lead - UL AWM Style 1015 For more Information please call 1-800-Belden1 Description: 14 AWG stranded 41x30 tinned copper conductor, PVC insulation. Rated 105ºC, 600V. Rated 2500V	Original	PDF	1-800-Belden1 41x30) 41x30 73/23/EEC) 93/68/EEC.

max 8770 Abstract: AWM Style 2093 Text: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 8770 Multi-Conductor - Audio, Control and Instrumentation Cable For more Information please call 1-800-Belden1 Description: 18 AWG stranded 16x30 tinned copper conductors, conductors cabled, polyethylene insulation, overall	Original	PDF	1-800-Belden1 16x30) 16x30 73/23/EEC) 93/68/EEC. max 8770 AWM Style 2093
007500 Abstract: TAG+8916 Qualcomm,+MSM+8916 Text: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 8916 Hook-up/Lead - UL AWM Style 1015 For more Information please call 1-800-Belden1 Description: 14 AWG stranded 41x30 tinned copper conductor, PVC insulation. Rated 105ºC, 600V. Rated 2500V	Original	PDF	1-800-Belden1 41x30) 41x30 73/23/EEC) 93/68/EEC. 007500 TAG+8916 Qualcomm,+MSM+8916
Untitled Abstract: No abstract text available Text: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 7939A Multi-Conductor - Category 5e DataTuff Twisted Pair Cable For more Information please call 1-800-Belden1 Description: 24 AWG stranded 7x32 bare copper conductors, bonded pairs, polyolefin insulation, polyester separator,	Original	PDF	1-800-Belden1 200MHz 100BaseTX, 100BaseVG 155ATM, 622ATM, RS-422,
sot-23 Transistor MARKING CODE ZG Abstract: ZG SOT23 transistor marking zg Text: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	900MHz OT-23 Q62702-F1298 sot-23 Transistor MARKING CODE ZG ZG SOT23 transistor marking zg
Untitled Abstract: No abstract text available Text: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	900MHz Q62702-F1298 OT-23 D155144 flE35fc D12514S
Untitled Abstract: No abstract text available Text: SIEMENS BFR 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • f j = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	900MHz Q62702-F1494 OT-323 23SbQ5
Untitled Abstract: No abstract text available Text: SIEMENS BFR 280W NPN S ilicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • *r = 7.5GHz F= 1.5dEJ at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	PDF	900MHz Q62702-F1494 OT-323
lge 673 Abstract: TRANSISTOR cq 802 Text: BEE D • 053b3E0 □017Q3C] 0 H S I P NPN N Silicon RF Transistor SIEMENS/ SPCL-. SEMICONDS ^ ^ BFR 193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • fr = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions!	OCR Scan	PDF	053b3E0 017Q3C 62702-F1218 OT-23 01-1-1-7O lge 673 TRANSISTOR cq 802
TRANSISTOR 131-6 BJ 946 Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16 Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise	OCR Scan	PDF	B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
BFT65 Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions	OCR Scan	PDF

BFR 36.2 Search Results

BFR 36.2 Result Highlights (5)

BFR 36.2 Price and Stock

ITT Interconnect Solutions BFR36-2011-46P-1-F80

BFR 36.2 Datasheets Context Search

BFR 965

Q62702-F1494

MJE 280 power transistor

BFR91

Transistor BFR 90 application

4934N

4934N

SO8F

VSO05561

Untitled

4934N

4934N

Untitled

Untitled

max 8770

007500

Untitled

sot-23 Transistor MARKING CODE ZG

Untitled

Untitled

Untitled

lge 673

TRANSISTOR 131-6 BJ 946

BFT65