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    BFP540 Price and Stock

    Infineon Technologies AG BFP540ESDH6327XTSA1

    RF TRANS NPN 5V 30GHZ SOT343-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP540ESDH6327XTSA1 Digi-Reel 8,509 1
    • 1 $0.57
    • 10 $0.386
    • 100 $0.2902
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    BFP540ESDH6327XTSA1 Cut Tape 8,509 1
    • 1 $0.57
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    BFP540ESDH6327XTSA1 Reel 6,000 3,000
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    Mouser Electronics BFP540ESDH6327XTSA1 4,829
    • 1 $0.56
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    Verical BFP540ESDH6327XTSA1 900 48
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    Newark BFP540ESDH6327XTSA1 Cut Tape 2,992 5
    • 1 $0.622
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    BFP540ESDH6327XTSA1 Reel 3,000
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    Rochester Electronics BFP540ESDH6327XTSA1 495 1
    • 1 $0.2205
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    Chip1Stop BFP540ESDH6327XTSA1 Cut Tape 900
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    EBV Elektronik BFP540ESDH6327XTSA1 66,000 9 Weeks 3,000
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    New Advantage Corporation BFP540ESDH6327XTSA1 54,000 1
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    Win Source Electronics BFP540ESDH6327XTSA1 18,200
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    • 100 $0.582
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    Infineon Technologies AG BFP540FESDH6327XTSA1

    RF TRANS NPN 5V 30GHZ 4TSFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP540FESDH6327XTSA1 Digi-Reel 1,918 1
    • 1 $0.55
    • 10 $0.376
    • 100 $0.2822
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    BFP540FESDH6327XTSA1 Cut Tape 1,918 1
    • 1 $0.55
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    BFP540FESDH6327XTSA1 Reel 3,000
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    • 10000 $0.21873
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    Mouser Electronics BFP540FESDH6327XTSA1 3,450
    • 1 $0.43
    • 10 $0.319
    • 100 $0.259
    • 1000 $0.234
    • 10000 $0.183
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    Verical BFP540FESDH6327XTSA1 288,000 3,000
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    BFP540FESDH6327XTSA1 3,000 3,000
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    BFP540FESDH6327XTSA1 2,442 32
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    BFP540FESDH6327XTSA1 1,975 141
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    BFP540FESDH6327XTSA1 1,255 36
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    Arrow Electronics BFP540FESDH6327XTSA1 3,000 10 Weeks 3,000
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    BFP540FESDH6327XTSA1 Cut Strips 2,442 10 Weeks 1
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    BFP540FESDH6327XTSA1 1,255 1
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    Newark BFP540FESDH6327XTSA1 Cut Tape 2,938 1
    • 1 $0.714
    • 10 $0.616
    • 100 $0.47
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    Rochester Electronics BFP540FESDH6327XTSA1 11,483 1
    • 1 $0.2139
    • 10 $0.2139
    • 100 $0.2011
    • 1000 $0.1818
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    Chip1Stop BFP540FESDH6327XTSA1 3,000
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    BFP540FESDH6327XTSA1 2,996
    • 1 $1.6
    • 10 $1.6
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    BFP540FESDH6327XTSA1 2,442
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    BFP540FESDH6327XTSA1 Cut Tape 1,975
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    BFP540FESDH6327XTSA1 1,255
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    EBV Elektronik BFP540FESDH6327XTSA1 18,000 11 Weeks 3,000
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    Infineon Technologies AG BFP-540F-E6327

    RF TRANS NPN 5V 30GHZ 4TSFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP-540F-E6327 Reel
    • 1 -
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    Infineon Technologies AG BFP540FESDE6327

    RF TRANS NPN 5V 30GHZ 4TSFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP540FESDE6327 Reel 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.35169
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    NexGen Digital BFP540FESDE6327 6,763
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    Infineon Technologies AG BFP540E6327BTSA1

    RF TRANS NPN 5V 30GHZ SOT343-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP540E6327BTSA1 Reel 6,000
    • 1 -
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    • 10000 $0.26153
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    Find more BFP540 price and stock on Findchips.com

    BFP540 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFP540 Infineon Technologies NPN Silicon Germanium RF Transistor Original PDF
    BFP540 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFP540 Infineon Technologies NPN Silicon RF Transistor low noise- 1.8 GHz Original PDF
    BFP540 Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-SOT343-4; VCEO (max): 4.5 V; IC(max): 80.0 mA; Ptot (max): 250.0 mW; fT (typ): 30.0 GHz; F (typ): 0.9 dB; Original PDF
    BFP540 Philips Semiconductors NPN 9 GHz Wideband Transistor Original PDF
    BFP540E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 4.5V SOT-343 Original PDF
    BFP540E6327BTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 4.5V SOT-343 Original PDF
    BFP540E6433 Infineon Technologies TRANS GP BJT NPN 4.5V 0.08A 4 Original PDF
    BFP540ECSP Infineon Technologies BFP540ECSP Original PDF
    BFP540ESD Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFP540ESD Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-SOT343-4; VCEO (max): 4.5 V; IC(max): 80.0 mA; Ptot (max): 250.0 mW; fT (typ): 30.0 GHz; F (typ): 0.9 dB; Original PDF
    BFP540ESDE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 4.5V ESD SOT-343 Original PDF
    BFP540ESDE6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 4.5V ESD SOT-343 Original PDF
    BFP540ESDH6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 4.5V 80MA SOT343 Original PDF
    BFP540ESDH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 4.5V 80MA SOT343 Original PDF
    BFP540F Infineon Technologies NPN Silicon RF transistor for low noise, highest gain LNA in NEW thin small flatlead package TSFP-4 Original PDF
    BFP540F Infineon Technologies NPN Silicon Germanium RF Transistor Original PDF
    BFP540FE6327 Infineon Technologies TRANS GP BJT NPN 4.5V 0.08 Original PDF
    BFP 540F E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 4.5V TSFP-4 Original PDF
    BFP540FE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 4.5V TSFP-4 Original PDF

    BFP540 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and


    Original     		PDF 540ESD 540ESD BFP540ESD 460L3 BFR460L3 434MHz BFP460 360L3 340L3

    marking AUs

    Abstract: BFP420F BFP540FESD amplifier marking code a
    Text: BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET  45 - Line • Pb-free (ROHS compliant) package 1)


    Original     		PDF BFP540FESD marking AUs BFP420F BFP540FESD amplifier marking code a

    BFP540

    Abstract: INFINEON application note
    Text: SIEGET 45 BFP540 NPN Silicon RF Transistor Preliminary data 3  For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB  Gold metallization for high reliability 2  SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP540 VPS05605 OT343 50Ohm -j100 Aug-09-2001 BFP540 INFINEON application note

    BFP540F

    Abstract: No abstract text available
    Text: SIEGET 45 BFP540F NPN Silicon RF Transistor Preliminary data XYs  For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1  Gold metallization for high reliability  SIEGET  45 - Line TSFP-4 to p v ie w !


    Original     		PDF BFP540F Aug-09-2001 BFP540F

    Transistor BFP540

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)


    Original     		PDF BFP540 OT343 Transistor BFP540

    marking AUs

    Abstract: No abstract text available
    Text: BFP540ESD NPN Silicon RF Transistor 3 Preliminary data 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21.0 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line • Exellent ESD performance


    Original     		PDF BFP540ESD VPS05605 OT343 marking AUs

    ic marking Yb

    Abstract: INFINEON ATS TRANSISTOR MARKING YB BFP420F BFP540F E6327 keic
    Text: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g


    Original     		PDF BFP540F ic marking Yb INFINEON ATS TRANSISTOR MARKING YB BFP420F BFP540F E6327 keic

    marking aus

    Abstract: BFP420F BFP540FESD amplifier marking code a
    Text: BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET  45 - Line • Pb-free (ROHS compliant) package 1)


    Original     		PDF BFP540FESD marking aus BFP420F BFP540FESD amplifier marking code a

    INFINEON ATS

    Abstract: BFP540 BGA420
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)


    Original     		PDF BFP540 OT343 INFINEON ATS BFP540 BGA420

    BFP540

    Abstract: capacitor 0402 AN057 N057 murata VCOs
    Text: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 5 7 A 1 . 9 G H z L o w N o i s e A m p l i f i e r o pt i m i z e d f o r h i g h IP3 using BFP540 R F & P r o t e c ti o n D e v i c e s Edition 2007-01-08 Published by


    Original     		PDF BFP540 BFP540 capacitor 0402 AN057 N057 murata VCOs

    Untitled

    Abstract: No abstract text available
    Text: BFP540FESD Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Minimum noise figure NFmin = 0.9 dB • Pb-free (ROHS compliant) and halogen-free thin small


    Original     		PDF BFP540FESD AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon Germanium RF Transistor 3 4  For highest gain low noise amplifier at 1.8 GHz  Outstanding Gms = 21 dB 2 Noise Figure F = 0.9 dB  Gold metallization for high reliability 1  SIEGET  45 - Line VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP540 VPS05605 OT343 50Ohm -j100 Jul-14-2003

    Untitled

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP540 VPS05605 OT343 50Ohm Jul-22-2004 -j100

    Untitled

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP540 VPS05605 OT343

    Untitled

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)


    Original     		PDF BFP540 OT343

    BFP540ESD

    Abstract: BGA420
    Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line


    Original     		PDF BFP540ESD OT343 BFP540ESD BGA420

    BFP540

    Abstract: No abstract text available
    Text: Application Note No. 057 High Frequency Components T. Tracht A 1.9 GHz Low Noise Amplifier optimised for high IP3 using BFP540 Features • NF = 1.3 dB • Gain = 15.5 dB • OIP3 = 24 dBm • Small SOT 343 Package Description 1900 MHz LNA Design Example Infineon’s BFP540 is a high performance, low


    Original     		PDF BFP540 BFP540 BFP540,

    BFP540

    Abstract: No abstract text available
    Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB Noise Figure F = 0.9 dB 2 • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP540 VPS05605 OT343 50Ohm -j100 Jan-28-2004 BFP540

    BFP540

    Abstract: INFINEON ATS BGA420 Transistor BFP540
    Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding G ms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP540 OT343 BFP540 INFINEON ATS BGA420 Transistor BFP540

    Untitled

    Abstract: No abstract text available
    Text: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g


    Original     		PDF BFP540F

    BFP540ESD

    Abstract: BGA420
    Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line


    Original     		PDF BFP540ESD OT343 10may BFP540ESD BGA420

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors • bbS3T31 D0314T7 TT? W APX Objective specification NPN 9 GHz wideband transistor BFP540 N AMER PHILIPS/DISCRETE FEATURES b'lE D — PINNING • High power gain PIN • Low noise figure 1 collector DESCRIPTION • High transition frequency


    OCR Scan     		PDF bbS3T31 D0314T7 BFP540 OT173X) BFP540 OT173 OT173X RE120

    SOT-173

    Abstract: SOT173 BFP540 wideband transistor sot173 SOT173 RF transistor
    Text: Philips Semiconductors H b t i 53 T 31 0 03 14 ^7 TT? AP X Objective specification NPN 9 GHz wideband transistor — ^ — BFP540 N AMER PHILIPS/DISCRETE bTE D e ­ PINNING features • High power gain • Low noise figure PIN DESCRIPTION 1 collector • High transition frequency


    OCR Scan     		PDF bti53T31 OT173X) BFP540 OT173 OT173X OT173. OT173X. SOT-173 SOT173 wideband transistor sot173 SOT173 RF transistor

    SOT-173

    Abstract: sot173 BFP96 BFQ32C
    Text: 55 RF/Microwave Devices RF W ideband Transistors cont. Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A


    OCR Scan     		PDF BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR SOT-173 sot173 BFP96 BFQ32C