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    BFP182 Price and Stock

    Rochester Electronics LLC BFP182RE7764HTSA1

    BFP182 - LOW-NOISE SI TRANSISTOR
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    DigiKey BFP182RE7764HTSA1 Bulk 259,459 2,453
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    Infineon Technologies AG BFP182WH6327XTSA1

    RF TRANS NPN 12V 8GHZ SOT343-4
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    DigiKey BFP182WH6327XTSA1 Reel 9,000 3,000
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    BFP182WH6327XTSA1 Digi-Reel 1
    • 1 $0.44
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    BFP182WH6327XTSA1 Cut Tape 1
    • 1 $0.44
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    Avnet Americas BFP182WH6327XTSA1 Reel 6 Weeks 9,000
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    Mouser Electronics BFP182WH6327XTSA1 8,771
    • 1 $0.44
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    Rochester Electronics BFP182WH6327XTSA1 763,161 1
    • 1 $0.078
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    Infineon Technologies AG BFP 182 E7764

    RF TRANS NPN 12V 8GHZ SOT143-4
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    DigiKey BFP 182 E7764 Cut Tape 688 1
    • 1 $0.38
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    BFP 182 E7764 Reel
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    Rochester Electronics LLC BFP182WE6327

    RF TRANSISTOR, L BAND, NPN
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    DigiKey BFP182WE6327 Bulk 3,463
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    Infineon Technologies AG BFP182WE6327HTSA1

    RF TRANS NPN 12V 8GHZ SOT343-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP182WE6327HTSA1 Cut Tape 1
    • 1 $0.44
    • 10 $0.44
    • 100 $0.44
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    • 10000 $0.44
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    BFP182WE6327HTSA1 Reel 9,000
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    • 10000 $0.11835
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    Find more BFP182 price and stock on Findchips.com

    BFP182 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFP182 Infineon Technologies For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA Original PDF
    BFP182 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFP182 Siemens NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) Original PDF
    BFP182 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFP182E7764 Infineon Technologies TRANS GP BJT NPN 12V 0.035A 4SOT-143 T/R Original PDF
    BFP 182 E7764 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR NPN RF 12V SOT-143 Original PDF
    BFP182E7764 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 12V SOT-143 Original PDF
    BFP182R Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFP182R Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFP182R Siemens NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) Original PDF
    BFP182RE7764 Infineon Technologies TRANS GP BJT NPN 12V 0.035A 4SOT-143R T/R Original PDF
    BFP182RE7764 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V SOT-143R Original PDF
    BFP182RE7764HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V SOT-143R Original PDF
    BFP182T Vishay Intertechnology Silicon NPN Planar RF Transistor Original PDF
    BFP182T Vishay Siliconix Silicon NPN Planar RF Transistor Original PDF
    BFP182T-GS08 Vishay TRANS GP BJT NPN 10V 0.035A 4SOT-143 T/R Original PDF
    BFP182TRW Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFP182TRW-GS08 Vishay TRANS GP BJT NPN 10V 0.035A 4SOT-343R T/R Original PDF
    BFP182TW Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFP182TW-GS08 Vishay TRANS GP BJT NPN 10V 0.035A 4SOT-343 T/R Original PDF

    BFP182 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFP182W

    Abstract: BGA420
    Text: BFP182W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFP182W OT343 BFP182W BGA420

    Untitled

    Abstract: No abstract text available
    Text: BFP182 NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 4  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFP182 VPS05178 OT143

    Untitled

    Abstract: No abstract text available
    Text: BFP182W NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at 4 collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFP182W VPS05605 OT343

    Untitled

    Abstract: No abstract text available
    Text: BFP182W Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant and halogen-free package with visible leads


    Original     		PDF BFP182W AEC-Q101 OT343

    Untitled

    Abstract: No abstract text available
    Text: Not for new design, this product will be obsoleted soon BFP182T / BFP182TW / BFP182TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Low power applications Low noise figure e3 High transition frequency Lead Pb -free component


    Original     		PDF BFP182T BFP182TW BFP182TRW OT-143 2002/95/EC 2002/96/EC OT-343 OT-343R OT-143

    BFP182T

    Abstract: marking 82
    Text: BFP182T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low power applications D Low noise figure


    Original     		PDF BFP182T D-74025 17-Apr-96 BFP182T marking 82

    Untitled

    Abstract: No abstract text available
    Text: BFP182T/BFP182TW/BFP182TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features


    Original     		PDF BFP182T/BFP182TW/BFP182TRW BFP182TW BFP182TRW BFP182T D-74025 20-Jan-99

    BFP182TRW

    Abstract: silicon npn planar rf transistor sot 143 sot-143 vishay telefunken BFP182T BFP182TW
    Text: BFP182T/BFP182TW/BFP182TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features


    Original     		PDF BFP182T/BFP182TW/BFP182TRW BFP182TW BFP182TRW BFP182T D-74025 20-Jan-99 silicon npn planar rf transistor sot 143 sot-143 vishay telefunken

    Untitled

    Abstract: No abstract text available
    Text: BFP182R Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original     		PDF BFP182R AEC-Q101 OT143R

    BFP182T

    Abstract: BFP182TRW BFP182TW vishay MARKING UM
    Text: BFP182T / BFP182TW / BFP182TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Low power applications Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFP182T BFP182TW BFP182TRW 2002/95/EC 2002/96/EC OT-143 OT-343 OT-343R BFP182T OT-143 BFP182TRW vishay MARKING UM

    infineon marking L2

    Abstract: BFP181 BFP182
    Text: BFP182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP182 OT143 infineon marking L2 BFP181 BFP182

    Untitled

    Abstract: No abstract text available
    Text: BFP182T / BFP182TW / BFP182TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Low power applications • Low noise figure • High transition frequency 3 4 2 1 Applications SOT-343 For low noise and high gain broadband amplifiers at


    Original     		PDF BFP182T BFP182TW BFP182TRW OT-143 OT-343 OT-143 OT-343 OT-343R

    BFP182R

    Abstract: TRANSISTOR BI 187
    Text: BFP182R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs


    Original     		PDF BFP182R OT143R 900MHz Aug-09-2001 BFP182R TRANSISTOR BI 187

    Untitled

    Abstract: No abstract text available
    Text: BFP182T/BFP182TW/BFP182TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features


    Original     		PDF BFP182T/BFP182TW/BFP182TRW BFP182TW BFP182TRW BFP182T D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: BFP182W NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at 4 collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFP182W VPS05605 OT343

    BFP182T

    Abstract: BFP182TRW BFP182TW
    Text: BFP182T / BFP182TW / BFP182TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Low power applications Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC


    Original     		PDF BFP182T BFP182TW BFP182TRW 2002/95/EC 2002/96/EC OT-143 OT-343 OT-343R BFP182T OT-143 BFP182TRW

    BFP181

    Abstract: BFP182
    Text: BFP182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFP182 OT143 BFP181 BFP182

    BFP182T

    Abstract: No abstract text available
    Text: BFP182T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low power applications D Low noise figure


    Original     		PDF BFP182T D-74025 17-Apr-96 BFP182T

    BFP182W

    Abstract: BGA420
    Text: BFP182W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP182W OT343 BFP182W BGA420

    BFP182T

    Abstract: BFP182TRW BFP182TW
    Text: BFP182T/BFP182TW/BFP182TRW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features


    Original     		PDF BFP182T/BFP182TW/BFP182TRW BFP182TW BFP182TRW BFP182T D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F= 1.2dB at 900MHz VPS05178 ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration


    OCR Scan     		PDF BFP182 900MHz 2-F1396 OT-143 2565b fiE35bD5

    Untitled

    Abstract: No abstract text available
    Text: Tem ic BFP182T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. £ Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features


    OCR Scan     		PDF BFP182T 17-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: ViSHAY _ ▼ BFP182T/BFP182TW/BFP182TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA.


    OCR Scan     		PDF BFP182T/BFP182TW/BFP182TRW BFP182TW BFP182TRW BFP182T D-74025 20-Jan-99

    transistor B 1184

    Abstract: No abstract text available
    Text: SIEMENS BFP182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • * r = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz BFP182R OT-143R Q62702-F1601 transistor B 1184