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    phototransistor 650 nm

    Abstract: phototransistor visible light C660 phototransistor peak 550 nm
    Text: •I bfl02245 DD002B1 OPTO TECHNOLOGY OPTO TECHNOLOGY 4 M IOTI INC 42E J> - " T - M l - T l , REFLECTIVE SWITCH T Y P E OTR 6 6 0 Features ■ Visible LED C660 nM ■ Phototransistor ■ Low cost plastic housing Description Dpto Technology's OTR 660 Re­


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    DD002B1 phototransistor 650 nm phototransistor visible light C660 phototransistor peak 550 nm PDF

    PHOTODIODE 708

    Abstract: br A 708
    Text: • bfl02245 000014? 7 IOTI OPTO TECHNOLOGY INC 42E T> Ml-3/ OPTO TECHNOLOGY PN SILICON PHOTODIODE T Y P E OT 4 2 3 Features ■ Low co st ■ High speed ■ T-1 plastic package Description Opto Technology's OT 4 2 3 con­ s is ts of a PN junction silicon


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    bfl02245 PHOTODIODE 708 br A 708 PDF

    opto npn

    Abstract: photo darlington sensor
    Text: •I bflOZBMS D 0 0 0 1 4 1 OPTO TECHNOLOGY b IOTI INC 4¡BE J> q - - U l - OPTO TECHNOLOGY ^ 3 N P N SILICON PHOTODARLINGTON T Y P E OT 411 Features ■ Miniature photodarlington ■ Hermetically sealed package ■ High sensitivity Description Opto Technology's OT 411 sen­


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    D000141 0T411L 0T411 Ratings141 opto npn photo darlington sensor PDF

    br A 708

    Abstract: No abstract text available
    Text: •I bôOESMS DDDD21S OPTO TECHNOLOGY ‘i M O T I INC 42E OPTO TECHNOLOGY REFLECTIVE SWITCH TYPE OTR 636 Features ■ Photodarlington ■ Low c o s t plastic housing ■ High gain Description □ p to Technology's OTR 63B reflective sensors combine a gallium arsenide infrared emit­


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    DDD21S 562CHADDICK IL60090 br A 708 PDF