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    BF998 MARKING CODE Search Results

    BF998 MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    BF998 MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g1 TRANSISTOR SMD MARKING CODE

    Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs


    Original     		PDF BF998; BF998R BF998R MAM039 BF998 g1 TRANSISTOR SMD MARKING CODE marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 g1 7 TRANSISTOR SMD MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BF998. BF998 OT143 BF998R OT143R

    TRANSISTOR mosfet BF998

    Abstract: BF998 bf998 mosfet tetrode application note BF998 marking code BF998R BFP181 BFP181R 3G1 transistor
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BF998. BF998 OT143 BF998R OT143R TRANSISTOR mosfet BF998 BF998 bf998 mosfet tetrode application note BF998 marking code BF998R BFP181 BFP181R 3G1 transistor

    bf998 MOW

    Abstract: marking code mow marking MOW sot143 MOW sot143 BF998B BF998B-GS08 BF998R marking MOW BF998 VISHAY BF998RAW-GS08
    Text: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance


    Original     		PDF BF998 BF998R BF998RW OT-143 OT-143R OT-343R BF998 OT-143 OT-343R bf998 MOW marking code mow marking MOW sot143 MOW sot143 BF998B BF998B-GS08 marking MOW BF998 VISHAY BF998RAW-GS08

    bf998

    Abstract: application BF998 TRANSISTOR mosfet BF998
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


    Original     		PDF BF998. BF998 BF998R OT143 OT143R BF998, BF998R application BF998 TRANSISTOR mosfet BF998

    Untitled

    Abstract: No abstract text available
    Text: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance


    Original     		PDF BF998 BF998R BF998RW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R D-74025

    BF998B-GS08

    Abstract: NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08
    Text: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance


    Original     		PDF BF998 BF998R BF998RW 2002/95/EC 2002/96/EC OT-143 OT-143R OT-343R OT-143 BF998B-GS08 NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08

    BF998B

    Abstract: BF998 VISHAY bf998 BF998A-GS08 BF998A BF998R BF998RA BF998RAW BF998RB BF998RW
    Text: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance


    Original     		PDF BF998 BF998R BF998RW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R OT-343R BF998B BF998 VISHAY BF998A-GS08 BF998A BF998RA BF998RAW BF998RB BF998RW

    Untitled

    Abstract: No abstract text available
    Text: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance


    Original     		PDF BF998 BF998R BF998RW OT-143 OT-143R OT-343R BF998 OT-143 OT-343R

    BF998RAW-GS08

    Abstract: No abstract text available
    Text: Not for new design, this product will be obsoleted soon BF998/BF998R/BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure


    Original     		PDF BF998/BF998R/BF998RW 2002/95/EC 2002/96/EC OT143 OT143R OT343R BF998 OT143 18-Jul-08 BF998RAW-GS08

    BF998

    Abstract: MGA002 MGE802 BF998 depletion BF998R dual-gate bf-998 MGE812 bb405 MGE814
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs


    Original     		PDF BF998; BF998R MAM039 BF998 MGA002 MGE802 BF998 depletion BF998R dual-gate bf-998 MGE812 bb405 MGE814

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer


    Original     		PDF BF998; BF998R MAM039 R77/02/pp15

    BF998R

    Abstract: BF998 MGA002 MGE802 application BF998 dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer


    Original     		PDF BF998; BF998R MAM039 R77/02/pp15 BF998R BF998 MGA002 MGE802 application BF998 dual-gate

    Philips MARKING CODE

    Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
    Text: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked


    Original     		PDF OT143, OT323, OT343, OT363, OD110, OD323 OD523 BF992 PMBF4416A BF510 Philips MARKING CODE Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363

    BF998

    Abstract: G1 TRANSISTOR Marking G2 mosfet tetrode TRANSISTOR mosfet BF998 BF998 marking code BF marking code BF transistor datasheet transistor marking G1 electrostatic discharge
    Text: BF 998R Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF998 Q62702-F1177 OT-143R Oct-23-1996 BF998 G1 TRANSISTOR Marking G2 mosfet tetrode TRANSISTOR mosfet BF998 BF998 marking code BF marking code BF transistor datasheet transistor marking G1 electrostatic discharge

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    BF998

    Abstract: MGA002 MGE802 bf998 Mop Dual-Gate cfs 455 j BB405 BF998R UGC469 marking code g1s
    Text: Product specification Philips Semiconductors Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS


    OCR Scan     		PDF BF998; BF998R OT143 OT143R 7110fl5b OT143. OT143R. BF998 MGA002 MGE802 bf998 Mop Dual-Gate cfs 455 j BB405 BF998R UGC469 marking code g1s

    TRANSISTOR mosfet BF998

    Abstract: BF998 depletion BF998 UCB343 dual gate mosfet
    Text: Philips Components D atasheet status Preliminary specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfel/Gis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor


    OCR Scan     		PDF BF998 OT143 MCB346 MCB345 TRANSISTOR mosfet BF998 BF998 depletion UCB343 dual gate mosfet

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high


    OCR Scan     		PDF bbS3T31 QQ23b34 BF998 OT143 LtiS3T31

    bf998 Mop

    Abstract: BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv 75bEb DUAL GATE MOS-FET
    Text: b3E ]> Philips Semiconductors Data sheet status Preliminary specification date o f issue April 1991 FEATURES • Short channel transistor with high ratio lYfs 1/Cis • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor


    OCR Scan     		PDF 75bEb 6F998 OT143 bf998 Mop BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv DUAL GATE MOS-FET

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Data sheet sta tu s Product specification date o f issue April 1991 FEATURES BF998 Silicon n-channel dual gate M O S -FET QUICK REFERENCE DATA ratio |Y s l/Cis. • Low noise gain controlled am plifier to 1 GHz. PARAMETER SYMBOL • Short channel transistor with high


    OCR Scan     		PDF BF998 OT143 UCB345

    M74 marking

    Abstract: MARKING m3p marking code NB SOT23 m2p SOT23 m33 sot23 MARKING CODE m33 marking Code philips BSR58 marking M33 BF1109
    Text: Philips Semiconductors Small-signal fteld-effect transistors Marking codes Types in SOT23, SOT89, SOT143 and SOT343 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE MARKING CODE TYPE NUMBER TYPE NUMBER MARKING CODE


    OCR Scan     		PDF OT143 OT343 BF510 BF511 BF512 BF513 BF545A BF545B BF545C BF556A M74 marking MARKING m3p marking code NB SOT23 m2p SOT23 m33 sot23 MARKING CODE m33 marking Code philips BSR58 marking M33 BF1109

    sot23 marking M6p

    Abstract: PMBFJ111 PMBFJ174
    Text: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER


    OCR Scan     		PDF OT143 OT343 BF510 BF994S BST120 BF511 BF996S BST122 BF512 BF997 sot23 marking M6p PMBFJ111 PMBFJ174

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF BF998 Q62702-F1586 OT-343 fl235bG5