BF998R
Abstract: BF998 MGA002 MGE802 application BF998 dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer
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Original
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BF998;
BF998R
MAM039
R77/02/pp15
BF998R
BF998
MGA002
MGE802
application BF998
dual-gate
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer
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Original
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BF998;
BF998R
MAM039
R77/02/pp15
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PDF
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bf998 MOW
Abstract: marking code mow marking MOW sot143 MOW sot143 BF998B BF998B-GS08 BF998R marking MOW BF998 VISHAY BF998RAW-GS08
Text: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance
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Original
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BF998
BF998R
BF998RW
OT-143
OT-143R
OT-343R
BF998
OT-143
OT-343R
bf998 MOW
marking code mow
marking MOW sot143
MOW sot143
BF998B
BF998B-GS08
marking MOW
BF998 VISHAY
BF998RAW-GS08
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PDF
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BF998RW
Abstract: BF998 BF998R BF998RAW application BF998
Text: BF998/BF998R/BF998RW Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance
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Original
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BF998/BF998R/BF998RW
BF998R
BF998
BF998RWmprove
D-74025
23-Jun-99
BF998RW
BF998RAW
application BF998
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PDF
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Untitled
Abstract: No abstract text available
Text: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance
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Original
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BF998
BF998R
BF998RW
OT-143
OT-143R
OT-343R
BF998
OT-143
OT-343R
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PDF
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Untitled
Abstract: No abstract text available
Text: BF998 / BF998R / BF998RW VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance
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Original
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BF998
BF998R
BF998RW
OT-143
OT-143R
OT-343R
OT-143
OT-143R
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PDF
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Untitled
Abstract: No abstract text available
Text: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance
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Original
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BF998
BF998R
BF998RW
OT-143
2002/95/EC
2002/96/EC
OT-143R
OT-343R
D-74025
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PDF
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bf998rb
Abstract: BF998 BF998R BF998RAW BF998RW application BF998
Text: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance
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Original
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BF998/BF998R/BF998RW
BF998R
BF998
BF998RW
D-74025
23-Jun-99
bf998rb
BF998RAW
application BF998
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PDF
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application BF998
Abstract: BF998R 800MHz BF998
Text: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance
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Original
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BF998/BF998R/BF998RW
BF998
BF998R
BF998RW
D-74025
23-Jun-99
application BF998
BF998R 800MHz
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PDF
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BF998R 800MHz
Abstract: BF998 BF998 VISHAY BF998R BF998RAW BF998RW BF998 depletion application BF998
Text: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance
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Original
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BF998/BF998R/BF998RW
BF998
BF998R
BF998RW
D-74025
23-Jun-99
BF998R 800MHz
BF998 VISHAY
BF998RAW
BF998 depletion
application BF998
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PDF
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BF998 vishay
Abstract: application BF998 12864
Text: BF998 / BF998R / BF998RW VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance
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Original
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BF998
BF998R
BF998RW
OT-143
OT-143R
OT-343R
OT-143
OT-143R
BF998 vishay
application BF998
12864
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PDF
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BF998B
Abstract: BF998 VISHAY bf998 BF998A-GS08 BF998A BF998R BF998RA BF998RAW BF998RB BF998RW
Text: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance
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Original
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BF998
BF998R
BF998RW
OT-143
2002/95/EC
2002/96/EC
OT-143R
OT-343R
OT-343R
BF998B
BF998 VISHAY
BF998A-GS08
BF998A
BF998RA
BF998RAW
BF998RB
BF998RW
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PDF
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BF998RAW-GS08
Abstract: No abstract text available
Text: Not for new design, this product will be obsoleted soon BF998/BF998R/BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure
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Original
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BF998/BF998R/BF998RW
2002/95/EC
2002/96/EC
OT143
OT143R
OT343R
BF998
OT143
18-Jul-08
BF998RAW-GS08
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PDF
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BF998B-GS08
Abstract: NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08
Text: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance
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Original
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BF998
BF998R
BF998RW
2002/95/EC
2002/96/EC
OT-143
OT-143R
OT-343R
OT-143
BF998B-GS08
NATIONAL SEMICONDUCTOR MARKING CODE sot-143
sot143 code marking MS
BF998A
BF998A-GS08
BF998 VISHAY
application BF998
BF998RAW-GS08
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PDF
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g1 TRANSISTOR SMD MARKING CODE
Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs
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Original
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BF998;
BF998R
BF998R
MAM039
BF998
g1 TRANSISTOR SMD MARKING CODE
marking code ff SMD Transistor
TRANSISTOR SMD MARKING CODE BS t
marking code ff p SMD Transistor
smd marking mop
NF marking TRANSISTOR SMD c4
marking TRANSISTOR SMD nf c1
marking TRANSISTOR SMD nf c4
g1 7 TRANSISTOR SMD MARKING CODE
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PDF
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BF998
Abstract: bf 107 a BF998R BF998 depletion BF998A k d 998 0
Text: BF998/BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features D D D D D D High AGC-range D High gain D Available with reverse pin configuration BF 998 R
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Original
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BF998/BF998R
BF998
BF998R
D-74025
17-Apr-96
bf 107 a
BF998 depletion
BF998A
k d 998 0
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PDF
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BF 998
Abstract: BF998 BF998R 4551
Text: BF998/BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features D D D D D D High AGC-range D High gain D Available with reverse pin configuration BF 998 R
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Original
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BF998/BF998R
BF998
BF998R
D-74025
07-Mar-97
BF 998
4551
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PDF
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BF998 depletion
Abstract: BF988 bf988 sot 143 BF998
Text: viSM A Y ▼ _ BF998/BF998R Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. A Applications Input- and mixer stages in UHF tuners. Features
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OCR Scan
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BF998/BF998R
BF998R)
BF998
BF998R
D-74025
20-Jan-99
BF998 depletion
BF988
bf988 sot 143
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PDF
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BF998
Abstract: No abstract text available
Text: BF998/BF998R/BF998RW Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features • Integrated gate protection diodes
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OCR Scan
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BF998/BF998R/BF998RW
BF998
BF998R
23-Jun-99
BF998RW
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PDF
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BF998
Abstract: MGA002 MGE802 bf998 Mop Dual-Gate cfs 455 j BB405 BF998R UGC469 marking code g1s
Text: Product specification Philips Semiconductors Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS
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OCR Scan
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BF998;
BF998R
OT143
OT143R
7110fl5b
OT143.
OT143R.
BF998
MGA002
MGE802
bf998 Mop
Dual-Gate
cfs 455 j
BB405
BF998R
UGC469
marking code g1s
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PDF
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ap 4606
Abstract: SFE 7.02 MHz ap 4606 ic t469 SFE 8
Text: Temic BF998/BF998R S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features • • • •
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OCR Scan
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BF998/BF998R
BF998
BF998R
07-Mar-97
ap 4606
SFE 7.02 MHz
ap 4606 ic
t469
SFE 8
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PDF
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Untitled
Abstract: No abstract text available
Text: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high
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OCR Scan
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bbS3T31
QQ23b34
BF998
OT143
LtiS3T31
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PDF
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MAM184
Abstract: MOSFET Tetrode mosfet vhf power amplifier tetrode transistor BF998 mop top marking
Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF998 FEATURES APPLICATIONS • Short channel transistor with high ratio I YfSl / Cis • VHF and UHF applications such as television tuners with 12 V supply voltage and professional
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OCR Scan
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OT143
BF998
MAM184
MAM184
OT143)
MOSFET Tetrode
mosfet vhf power amplifier
tetrode transistor
BF998
mop top marking
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Data sheet sta tu s Product specification date o f issue April 1991 FEATURES BF998 Silicon n-channel dual gate M O S -FET QUICK REFERENCE DATA ratio |Y s l/Cis. • Low noise gain controlled am plifier to 1 GHz. PARAMETER SYMBOL • Short channel transistor with high
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OCR Scan
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BF998
OT143
UCB345
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PDF
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