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    BF966SA Search Results

    BF966SA Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF966SA Vishay Intertechnology N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
    BF966SA Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4TO-50 Original PDF

    BF966SA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF966S

    Abstract: BF966SA BF966SB
    Text: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D High AGC-range D Low feedback capacitance D Low input capacitance


    Original
    PDF BF966S BF966S D-74025 23-Jan-97 BF966SA BF966SB

    TO50 package

    Abstract: BF966 BF966S
    Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original
    PDF BF966S 2002/95/EC 2002/96/EC BF966S BF966SA BF966SB BF966d D-74025 TO50 package BF966

    2804SLS2

    Abstract: BF966 BF966S BF966SA BF966SB
    Text: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes


    Original
    PDF BF966S BF966S D-74025 20-Jan-99 2804SLS2 BF966 BF966SA BF966SB

    BF966S

    Abstract: BF966SA BF966SB 0V128
    Text: BF966S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes


    Original
    PDF BF966S BF966S D-74025 20-Jan-99 BF966SA BF966SB 0V128

    BF966

    Abstract: BF966S BF966SA BF966SB
    Text: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D Integrated gate protection diodes D High cross modulation performance


    Original
    PDF BF966S BF966S D-74025 23-Jan-97 BF966 BF966SA BF966SB

    BF966SA

    Abstract: BF966S BF966 BF966SB TO50 package MA1300
    Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance


    Original
    PDF BF966S BF966SA BF966SB BF966SA BF966S D-74025 BF966 BF966SB TO50 package MA1300

    BF966S

    Abstract: BF966SA BF966SB
    Text: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes


    Original
    PDF BF966S BF966S D-74025 20-Jan-99 BF966SA BF966SB

    BF966S

    Abstract: BF966 BF966SA BF966SB TO50 package
    Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance


    Original
    PDF BF966S 2002/95/EC 2002/96/EC 08-Apr-05 BF966S BF966 BF966SA BF966SB TO50 package

    Untitled

    Abstract: No abstract text available
    Text: BF966S v m rn r ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions fo r handling. A Applications Input- and m ixer stages especially U H F-tuners. Features • Integrated gate protection diodes


    OCR Scan
    PDF BF966S BF966S 20-Jan-99

    BF966S

    Abstract: No abstract text available
    Text: Tem ic BF966S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input- and mixerstages especially for UHF-tuners. Features • Integrated gate protection diodes


    OCR Scan
    PDF BF966S BF966S 23-Jan-97