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    BF820 SOT23 Search Results

    BF820 SOT23 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
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    BF820 SOT23 Price and Stock

    Nexperia BF820,235

    Bipolar Transistors - BJT SOT23 300V .05A NPN BJT
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    TTI BF820,235 Reel 20,000
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    Nexperia BF820 215

    Bipolar Transistors - BJT SOT23 300V .05A NPN BJT
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    TTI BF820 215 Reel 15,000
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    BF820 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF820

    Abstract: BF822
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking BF820 = 1V BF822 = 1X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 BF820 BF822 C-120 BF820 BF822

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BF820 = 1V BF822 = 1X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 BF820 BF822 C-120

    BF820

    Abstract: BF822
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking BF820 = 1V


    Original     		PDF OT-23 BF820 BF822 C-120 BF820 BF822

    BF820

    Abstract: BF821 BF822 BF823 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF820; BF822 NPN high-voltage transistors Product specification Supersedes data of 1997 Apr 23 1999 Apr 15 Philips Semiconductors Product specification NPN high-voltage transistors BF820; BF822 FEATURES


    Original     		PDF M3D088 BF820; BF822 BF821; BF823. BF820 MAM255 BF820 BF821 BF822 BF823 BP317

    bf820

    Abstract: No abstract text available
    Text: BF820/BF822 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low current (max.50 mA) High voltage (max.300V) Telephony and professional communication equipment. — — MARKING: BF820:1V, BF822: 1X Dimensions in inches and (millimeters)


    Original     		PDF BF820/BF822 OT-23 OT-23 BF820 BF822: BF822 BF822

    BF820 sot23

    Abstract: BF820 BF821 BF822 BF823 BF820 NXP
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF820; BF822 NPN high-voltage transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet NPN high-voltage transistors BF820; BF822 FEATURES PINNING • Low current max. 50 mA


    Original     		PDF BF820; BF822 BF821; BF823. BF820 MAM255 R75/04/pp6 BF820 sot23 BF820 BF821 BF822 BF823 BF820 NXP

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF820; BF822 NPN high-voltage transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet NPN high-voltage transistors BF820; BF822 PINNING FEATURES • Low current max. 50 mA


    Original     		PDF BF820; BF822 BF821; BF823. BF820 MAM255 R75/04/pp6

    BF820

    Abstract: BF821 BF822 BF823
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF820; BF822 NPN high-voltage transistors Product specification Supersedes data of 1999 Apr 15 2004 Jan 16 Philips Semiconductors Product specification NPN high-voltage transistors BF820; BF822 FEATURES PINNING • Low current max. 50 mA


    Original     		PDF BF820; BF822 BF821; BF823. BF820 MAM255 SCA76 BF820 BF821 BF822 BF823

    BF820

    Abstract: BF822 transistors 10 KW
    Text: Transys Electronics L I M I T E D SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking BF820 = 1V BF822 = 1X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1


    Original     		PDF OT-23 BF820 BF822 BF820 BF822 transistors 10 KW

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF820; BF822 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors


    Original     		PDF M3D088 BF820; BF822 BF821; BF823. BF822 BF820 MAM255

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification NPN General Purpose Amplifier BF820/BF822 FEATURES z Low current max.-50mA . Pb z High voltage(max.-300V). Lead-free APPLICATIONS z Telephony and professional communication equipment. SOT-23 ORDERING INFORMATION


    Original     		PDF BF820/BF822 -50mA) -300V) OT-23 BF820 BF822

    BF820

    Abstract: BF822 sot-23 marking 822
    Text: BL Galaxy Electrical Production specification NPN General Purpose Amplifier BF820/BF822 FEATURES z Low current max.50mA . Pb z High voltage(max.300V). Lead-free APPLICATIONS z Telephony and professional communication equipment. SOT-23 ORDERING INFORMATION


    Original     		PDF BF820/BF822 OT-23 BF820 BF822 BF820 BF822 sot-23 marking 822

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BF820/BF822 TRANSISTOR NPN SOT-23 1. BASE FEATURES z Low current (max.50 mA) z High voltage (max.300V) z Telephony and professional communication equipment. 2. EMITTER


    Original     		PDF OT-23 BF820/BF822 OT-23 BF820 BF822: BF820 BF822

    BF820

    Abstract: BF822
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BF820/BF822 TRANSISTOR NPN SOT-23 1. BASE FEATURES z Low current (max.50 mA) z High voltage (max.300V) z Telephony and professional communication equipment. 2. EMITTER


    Original     		PDF OT-23 BF820/BF822 OT-23 BF820 BF822: BF820 BF822 BF822

    BF823

    Abstract: PNP Epitaxial Silicon Transistor sot-23 BF820 BF821 BF822
    Text: BF821, BF823 Small Signal Transistors PNP FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) .056 (1.43) .052 (1.33) 3 ♦ As complementary types, the NPN transistors BF820 and BF822 are recommended. .016 (0.4)


    Original     		PDF BF821, BF823 OT-23 BF820 BF822 OT-23 BF821 BF823 PNP Epitaxial Silicon Transistor sot-23 BF821

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification BF820,BF822 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High voltage max. 300 V . 0.55 Low current (max. 50 mA) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF BF820 BF822 OT-23 BF820

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Apr 23 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistors BF820; BF822 FEATURES PINNING • Low curren t max. 50 mA PIN


    OCR Scan     		PDF BF820; BF822 BF821 BF823. BF820 MAM255 115002/00/03/pp8

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high-voltage transistors BF820; BF822 FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Telephony and professional communication equipment.


    OCR Scan     		PDF BF820; BF822 BF821; BF823. BF820 MAM255

    BF820

    Abstract: SOT-23 marking code LG
    Text: BF820 BF822 SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic package intended for application in thick and thin-film circuits. Primarily intended for use in telephony and professional communication equipment. P-N-P components are BF821, BF823 respectively.


    OCR Scan     		PDF BF820 BF822 BF821, BF823 OT-23. BF822 BF820 SOT-23 marking code LG

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high-voltage transistors FEATURES BF820; BF822 PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). 1 base 2 em itter 3 collector APPLICATIONS DESCRIPTION • Telephony and professional com m unication equipment.


    OCR Scan     		PDF BF820; BF822 BF821; BF823. BF820 BF822

    8F820

    Abstract: No abstract text available
    Text: BF820, BF822 NPN Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. As complementary types, the PNP transistors BF821 and BF823 are recommended. Top View Pin configuration 1 = Collector, 2 = Base, 3 = Emitter.


    OCR Scan     		PDF BF820, BF822 BF821 BF823 BF820= OT-23 BF820 BF822 8F820

    AXm marking

    Abstract: No abstract text available
    Text: BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic package intended for application in thick and thin-film circuits. Primarily intended for use in telephony and professional communication equipment. N P-N complements are BF820, B F822 respectively.


    OCR Scan     		PDF BF821 BF823 BF820, BF823 AXm marking

    1Y SOT-23

    Abstract: No abstract text available
    Text: BF821, BF823 PNP Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. A s complementary types, the NPN transistors BF820 and BF822 are recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter.


    OCR Scan     		PDF BF821, BF823 BF820 BF822 BF821 OT-23 BF821 BF823 1Y SOT-23

    00EM7

    Abstract: BF820 BF821 BF822 BF823 oc16
    Text: m bbS3T31 0Ü247G0 =557 • APX N AMER PHILIPS/DISCRETE BF820 BF822 b7E ]> SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope intended fo r application in thick and thin-film circuits. Primarily intended for use in telephony and professional communication equipment. P-N-P


    OCR Scan     		PDF bbS3T31 247G0 BF820 BF822 BF821, BF823 BF820 00EM7 BF821 BF822 oc16