BF820
Abstract: BF822
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking BF820 = 1V BF822 = 1X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
BF820
BF822
C-120
BF820
BF822
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BF820 = 1V BF822 = 1X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
BF820
BF822
C-120
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BF820
Abstract: BF822
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking BF820 = 1V
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OT-23
BF820
BF822
C-120
BF820
BF822
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BF820
Abstract: BF821 BF822 BF823 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF820; BF822 NPN high-voltage transistors Product specification Supersedes data of 1997 Apr 23 1999 Apr 15 Philips Semiconductors Product specification NPN high-voltage transistors BF820; BF822 FEATURES
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M3D088
BF820;
BF822
BF821;
BF823.
BF820
MAM255
BF820
BF821
BF822
BF823
BP317
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bf820
Abstract: No abstract text available
Text: BF820/BF822 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low current (max.50 mA) High voltage (max.300V) Telephony and professional communication equipment. MARKING: BF820:1V, BF822: 1X Dimensions in inches and (millimeters)
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BF820/BF822
OT-23
OT-23
BF820
BF822:
BF822
BF822
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BF820 sot23
Abstract: BF820 BF821 BF822 BF823 BF820 NXP
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF820; BF822 NPN high-voltage transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet NPN high-voltage transistors BF820; BF822 FEATURES PINNING • Low current max. 50 mA
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BF820;
BF822
BF821;
BF823.
BF820
MAM255
R75/04/pp6
BF820 sot23
BF820
BF821
BF822
BF823
BF820 NXP
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF820; BF822 NPN high-voltage transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet NPN high-voltage transistors BF820; BF822 PINNING FEATURES • Low current max. 50 mA
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BF820;
BF822
BF821;
BF823.
BF820
MAM255
R75/04/pp6
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PDF
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BF820
Abstract: BF821 BF822 BF823
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF820; BF822 NPN high-voltage transistors Product specification Supersedes data of 1999 Apr 15 2004 Jan 16 Philips Semiconductors Product specification NPN high-voltage transistors BF820; BF822 FEATURES PINNING • Low current max. 50 mA
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BF820;
BF822
BF821;
BF823.
BF820
MAM255
SCA76
BF820
BF821
BF822
BF823
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PDF
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BF820
Abstract: BF822 transistors 10 KW
Text: Transys Electronics L I M I T E D SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking BF820 = 1V BF822 = 1X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1
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OT-23
BF820
BF822
BF820
BF822
transistors 10 KW
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF820; BF822 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors
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M3D088
BF820;
BF822
BF821;
BF823.
BF822
BF820
MAM255
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PDF
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Untitled
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification NPN General Purpose Amplifier BF820/BF822 FEATURES z Low current max.-50mA . Pb z High voltage(max.-300V). Lead-free APPLICATIONS z Telephony and professional communication equipment. SOT-23 ORDERING INFORMATION
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BF820/BF822
-50mA)
-300V)
OT-23
BF820
BF822
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PDF
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BF820
Abstract: BF822 sot-23 marking 822
Text: BL Galaxy Electrical Production specification NPN General Purpose Amplifier BF820/BF822 FEATURES z Low current max.50mA . Pb z High voltage(max.300V). Lead-free APPLICATIONS z Telephony and professional communication equipment. SOT-23 ORDERING INFORMATION
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BF820/BF822
OT-23
BF820
BF822
BF820
BF822
sot-23 marking 822
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Apr 23 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistors BF820; BF822 FEATURES PINNING • Low curren t max. 50 mA PIN
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BF820;
BF822
BF821
BF823.
BF820
MAM255
115002/00/03/pp8
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BF820/BF822 TRANSISTOR NPN SOT-23 1. BASE FEATURES z Low current (max.50 mA) z High voltage (max.300V) z Telephony and professional communication equipment. 2. EMITTER
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OT-23
BF820/BF822
OT-23
BF820
BF822:
BF820
BF822
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BF820
Abstract: BF822
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BF820/BF822 TRANSISTOR NPN SOT-23 1. BASE FEATURES z Low current (max.50 mA) z High voltage (max.300V) z Telephony and professional communication equipment. 2. EMITTER
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OT-23
BF820/BF822
OT-23
BF820
BF822:
BF820
BF822
BF822
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PDF
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BF820
Abstract: BF821 BF822 BF823
Text: BF820, BF822 Small Signal Transistors NPN FEATURES SOT-23 ♦ NPN Silicon Epitaxial Planar Transistors .122 (3.1) .118 (3.0) .016 (0.4) .056 (1.43) .052 (1.33) 3 ♦ As complementary types, the PNP transistors BF821 and BF823 are recommended. .016 (0.4)
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BF820,
BF822
OT-23
BF821
BF823
OT-23
BF820
BF820
BF822
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PDF
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BF820
Abstract: SOT-23 marking code LG
Text: BF820 BF822 SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic package intended for application in thick and thin-film circuits. Primarily intended for use in telephony and professional communication equipment. P-N-P components are BF821, BF823 respectively.
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BF820
BF822
BF821,
BF823
OT-23.
BF822
BF820
SOT-23 marking code LG
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BF823
Abstract: PNP Epitaxial Silicon Transistor sot-23 BF820 BF821 BF822
Text: BF821, BF823 Small Signal Transistors PNP FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) .056 (1.43) .052 (1.33) 3 ♦ As complementary types, the NPN transistors BF820 and BF822 are recommended. .016 (0.4)
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BF821,
BF823
OT-23
BF820
BF822
OT-23
BF821
BF823
PNP Epitaxial Silicon Transistor sot-23
BF821
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN high-voltage transistors FEATURES BF820; BF822 PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). 1 base 2 em itter 3 collector APPLICATIONS DESCRIPTION • Telephony and professional com m unication equipment.
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BF820;
BF822
BF821;
BF823.
BF820
BF822
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8F820
Abstract: No abstract text available
Text: BF820, BF822 NPN Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. As complementary types, the PNP transistors BF821 and BF823 are recommended. Top View Pin configuration 1 = Collector, 2 = Base, 3 = Emitter.
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BF820,
BF822
BF821
BF823
BF820=
OT-23
BF820
BF822
8F820
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PDF
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AXm marking
Abstract: No abstract text available
Text: BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic package intended for application in thick and thin-film circuits. Primarily intended for use in telephony and professional communication equipment. N P-N complements are BF820, B F822 respectively.
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BF821
BF823
BF820,
BF823
AXm marking
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PDF
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1Y SOT-23
Abstract: No abstract text available
Text: BF821, BF823 PNP Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. A s complementary types, the NPN transistors BF820 and BF822 are recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter.
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BF821,
BF823
BF820
BF822
BF821
OT-23
BF821
BF823
1Y SOT-23
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PDF
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00EM7
Abstract: BF820 BF821 BF822 BF823 oc16
Text: m bbS3T31 0Ü247G0 =557 • APX N AMER PHILIPS/DISCRETE BF820 BF822 b7E ]> SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope intended fo r application in thick and thin-film circuits. Primarily intended for use in telephony and professional communication equipment. P-N-P
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bbS3T31
247G0
BF820
BF822
BF821,
BF823
BF820
00EM7
BF821
BF822
oc16
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Product specification BF820,BF822 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High voltage max. 300 V . 0.55 Low current (max. 50 mA) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1
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BF820
BF822
OT-23
BF820
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