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Catalog Datasheet	MFG & Type	Document Tags	PDF
BDX33C Abstract: No abstract text available Text: BDX33B, BDX33C NPN BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc	Original	BDX33B, BDX33C BDX34B, BDX34C BDX334B BDX33C, BDX334C 33C/34B, BDX33C	PDF
BDX33CG Abstract: BDX33BG BDX334 BDX33C Box 34C BDX334B BDX34CG BDX33B BDX34B BDX34C Text: BDX33B, BDX33C* NPN BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features •ăHigh DC Current Gain - hFE = 2500 (typ.) at IC = 4.0	Original	BDX33B, BDX33C* BDX34B, BDX34C* BDX33C BDX34C BDX334B BDX33C, BDX334C BDX33CG BDX33BG BDX334 Box 34C BDX334B BDX34CG BDX33B BDX34B	PDF
33c marking Abstract: BDX33BG box 34b BDX334B BDX33CG BDX334 Text: BDX33B, BDX33C NPN BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc	Original	BDX33B, BDX33C BDX34B, BDX34C BDX334B BDX33C, BDX334C 33C/34B, 33c marking BDX33BG box 34b BDX334B BDX33CG BDX334	PDF
BDX34C Abstract: 10 amp pnp darlington power transistors BDX33CG BDX33C BDX34CG BDX33B BDX34B marking 33c diode Text: BDX33B, BDX33C* NPN BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0	Original	BDX33B, BDX33C* BDX34B, BDX34C* BDX33C BDX34C BDX334B BDX33C, BDX334C 10 amp pnp darlington power transistors BDX33CG BDX34CG BDX33B BDX34B marking 33c diode	PDF