BDT30DF Search Results

BDT30DF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BDT30DF		Philips Semiconductors	Silicon Epitaxial Power Transistors		Original	PDF
BDT30DF		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF

BDT30DF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	PDF	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
df transistor Abstract: BDT30AF BDT30BF BDT30CF BDT30DF BDT30F Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF	Original	PDF	BDT30F/AF/BF/CF/DF BDT30F; BDT30AF BDT30BF; -100V BDT30CF -120V BDT30DF BDT29F/AF/BF/CF/DF BDT30F df transistor BDT30AF BDT30BF BDT30CF BDT30DF BDT30F
BDT29BF Abstract: T-33-07 29af BDT29AF BDT29CF BDT29F BDT30AF BDT30BF BDT30CF BDT30DF Text: B i N AMER bbS3T31 O C I l ' ï b S 'i BDT29F BDT29AF; 29BF BDT29CF; 29DF T P H IL IP S /D IS C R E T E aSE D T-33-07 SILICON EPITAXIAL POWER TRANSISTORS N-P-N silicon power transistors in a SOT-186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications.	OCR Scan	PDF	bbS3T31 BDT29F BDT29AF; BDT29CF; T-33-07 OT-186 BDT30F, BDT30AF, BDT30BF, BDT30CF BDT29BF T-33-07 29af BDT29AF BDT29CF BDT30AF BDT30BF BDT30DF
Untitled Abstract: No abstract text available Text: bbS3T31 O t m b S T =\ N AUER PHILIPS/DISCRETE 2SE D J V BDT29F BDT29AF; 29BF BDT29CF; 29DF SILICON EPITAXIAL POWER TRANSISTORS T " 33 " N-P-N silicon power transistors in a SOT-186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications.	OCR Scan	PDF	bbS3T31 BDT29F BDT29AF; BDT29CF; OT-186 BDT30F, BDT30AF, BDT30BF, BDT30CF BDT30DF.