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    BD826 TRANSISTOR Search Results

    BD826 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BD826 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor bd826

    Abstract: bd828 BD826-10 BD828-10 BD826 MD 202 BD829 BD830-16 BD830 BD830-10
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BD826; BD828; BD830 PNP power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 23 Philips Semiconductors Product specification PNP power transistors


    Original     		PDF M3D067 BD826; BD828; BD830 O-202; OT128B BD825 transistor bd826 bd828 BD826-10 BD828-10 BD826 MD 202 BD829 BD830-16 BD830 BD830-10

    transistor bd826

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD826; BD830 PNP power transistors Product specification Supersedes data of 1997 Jun 23 File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification PNP power transistors


    Original     		PDF M3D067 BD826; BD830 O-202; OT128B BD825 BD829. BD830 MAM304 transistor bd826

    to126

    Abstract: TO-126 BD825-10 BD826-10 BD137-10 BD825 bd138-16 BD826 BD136 BD139-16
    Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN GENERAL PURPOSE POWER TRANSISTORS VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) TO-126 45 3000 15000 40 >40 60 BD135 TO-126 45 1500 8000


    Original     		PDF O-126 BD135 BD135-10 BD135-16 BD137 BD137-10 to126 TO-126 BD825-10 BD826-10 BD137-10 BD825 bd138-16 BD826 BD136 BD139-16

    bd826

    Abstract: BD828-10 BD136-16 BD138-16 BD140-16 BD825-10 to126 philips power transistor bd139 BD140 philips BD138-10
    Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued PNP GENERAL PURPOSE POWER TRANSISTORS VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) TO-126 45 3000 15000 40 >40 60 BD136 TO-126 45 1500 8000


    Original     		PDF O-126 BD136 BD136-10 BD136-16 BD138 BD138-10 bd826 BD828-10 BD136-16 BD138-16 BD140-16 BD825-10 to126 philips power transistor bd139 BD140 philips BD138-10

    2n2222a SOT23

    Abstract: 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Conversion list Small-signal transistors Product specification File under Discrete Semiconductors, SC04 1997 Aug 06 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE


    Original     		PDF SC04/CATEGORY SC-59 OT143 OT323 OT363 SC-75 OT223 BC107 BC108 BC109 2n2222a SOT23 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23

    BC107 equivalent transistors

    Abstract: 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent bc237 equivalent MPSa06 equivalent equivalent for BC337 bc327 replacement
    Text: Philips Semiconductors Small-signal Transistors DISCONTINUED TYPE Replacement list REASON FOR DELETION REMARKS 2N1613 Discontinued 2N1711 Discontinued 2N1893 Discontinued 2N2219 Discontinued 2N2219A Discontinued 2N2222/A Discontinued 2N2369/A Discontinued


    Original     		PDF 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222/A 2N2369/A 2N2484 2N2905 2N2905A BC107 equivalent transistors 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent bc237 equivalent MPSa06 equivalent equivalent for BC337 bc327 replacement

    BD825

    Abstract: BD826 BD829 BD830
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D067 BD825; BD829 NPN power transistors Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN power transistors


    Original     		PDF M3D067 BD825; BD829 O-202; OT128B BD826 BD830. SCA60 BD825 BD829 BD830

    bd827

    Abstract: BD829 BD825 BD826 transistor bd826 BD828 BD830 IEC134
    Text: BD825 BD827 BD829 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose N-P-N transistors, in T0-202 plastic envelopes, recommended for driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.


    OCR Scan     		PDF BD825 BD827 BD829 T0-202 BD826, BD828 BD830. BD825 BD827 BD829 BD826 transistor bd826 BD830 IEC134

    BD828

    Abstract: BD828-10 BD826 transistor bd826 BD826-10 BD826-16 BD830-16 bd826 transistor
    Text: Philips Semiconductors Product specification PNP power transistors BD826; BD828; BD830 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • General purpose


    OCR Scan     		PDF BD826; BD828; BD830 O-202; OT128B BD825 BD829. OT128B) BD826 BD828 BD828-10 transistor bd826 BD826-10 BD826-16 BD830-16 bd826 transistor

    Untitled

    Abstract: No abstract text available
    Text: BD825 BD827 BD829 _ J V. SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose N-P-N transistors, in TO-202 plastic envelopes, recommended fo r driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.


    OCR Scan     		PDF BD825 BD827 BD829 O-202 BD826, BD828 BD830.

    BD826

    Abstract: BD828 BD827 BD830 80826 B0828 BD829 BD825 IEC134
    Text: BD826 BD828 BD830 J V. SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in T0-202 plastic envelopes, recommended for driver stages in hi-fi amplifiers and television circuits. N-P-N complements are BD825, BD827 and BD829. Matched pairs can be supplied.


    OCR Scan     		PDF BD826 BD828 BD830 T0-202 BD825, BD827 BD829. BD826 BD828 BD830 80826 B0828 BD829 BD825 IEC134

    Untitled

    Abstract: No abstract text available
    Text: BD826 BD828 BD830 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in TO-202 plastic envelopes, recommended for driver stages in hi-fi amplifiers and television circuits. N-P-N complements are BD825, BD827 and BD829. Matched pairs can be supplied.


    OCR Scan     		PDF BD826 BD828 BD830 O-202 BD825, BD827 BD829.

    b0825

    Abstract: bd825 BD827 BD829 B0828 BD826 BD828 BD830 IEC134
    Text: BD825 BD827 BD829 y V s . SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose N-P-N transistors, in T0-202 plastic envelopes, recommended fo r driver-stages in hi-fi amplifiers and television circuits. P-N-P complements are BD826, BD828 and BD830. Matched pairs can be supplied.


    OCR Scan     		PDF BD825 BD827 BD829 T0-202 BD826, BD828 BD830. bd825 bd827 b0825 BD829 B0828 BD826 BD830 IEC134

    BF762

    Abstract: TO-202 BF760
    Text: TO-202 Plastic Package Transistors PNP Electrical C haracteristics (Ta=25°C, U n le ss O therw ise Specified) Maxim um Ratings Type No. ^ CBO ^ CEO ' ' ebo (V) Min (V) Min IV) Min BD814 45 45 5 BD816 60 60 BD81B 100 BD826 45 *CBO PD (W) Ta=25 "C (A) (PA)


    OCR Scan     		PDF O-202 O-202 BD814 BD816 BD81B BD826 BF761 BF762 TO-202 BF760

    transistor bd826

    Abstract: bd830 BD 829 BD825 BD828
    Text: BD826 BD828 BD830 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose P-N-P transistors, in T 0 -2 0 2 plastic packages, recom m ended fo r d rive r stages in h i-fi am p lifie rs and television circuits. N-P-N com plem ents are BD825, BD827 and BD 829. M atched pairs can be supplied.


    OCR Scan     		PDF BD826 BD828 BD830 BD825, BD827 BD830 transistor bd826 BD 829 BD825

    b0816

    Abstract: BD816 BD814 BD818 BD826 BD828 BD842 BD844 CSA743 CSA743A
    Text: TO-202 PLASTIC PACKAGE TRANSISTORS PNP M a x im u m R a tin g s Typ» No. VCB0 (V) V ECO V EBO (V) (V) (MA) Min Min Min Max BD818 100 60 5.0 BDS30 100 80 5.0 'cBO 0.1 VCB (V) 30 « hpE CSA743A 80 80 80 5.0 5.0 5.0 50 60 60 5.0 BD828 60 60 5.0 30 CSA743 50


    OCR Scan     		PDF O-202 BD818 BDS30 BD844 CSA743A BD816 b0816 BD814 BD826 BD828 BD842 CSA743

    b0816

    Abstract: BD814 b0814 BD818 BD840 BD816 BD826 BD828 BD842 BD844
    Text: TO-202 PLASTIC PACKAGE TRANSISTORS PNP M a x im u m R a tin g s Type No. VCB0 (V) V ECO V EBO (V) (V) (MA) Min Min Min Max BD818 100 60 5.0 BDS30 100 80 5.0 'cBO 0.1 VCB (V) 30 « hpE CSA743A 80 80 80 5.0 5.0 5.0 50 60 60 5.0 BD828 60 60 5.0 30 CSA743 50


    OCR Scan     		PDF O-202 BD818 BDS30 BD844 CSA743A BD816 b0816 BD814 b0814 BD840 BD826 BD828 BD842

    Untitled

    Abstract: No abstract text available
    Text: TO-202 PLASTIC PACKAGE TRANSISTORS PNP M axim um R atings Typ# No. V CBO V ECO V EBO (V) (V) (V) (MA) Min Min Min Max BD818 100 60 5.0 BDS30 100 80 5.0 'cBO • 0.1 « hpE VCB (V) 30 CSA743A 80 80 80 5.0 5.0 5.0 50 60 60 5.0 BD828 60 60 5.0 30 CSA743 50


    OCR Scan     		PDF O-202 BDS30 CSA743A BD844 CSA743 CSA743B BD826

    TRANSISTOR BC 137

    Abstract: TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815
    Text: P h ilip s Sem iconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors G ENER AL-PU R PO SE LO W -FREQ UENCY TRANSISTO RS OVERVIEW PRO DUCT DATA: PAG ES 7-16 LOW -POW ER NPN surface-m ount leaded


    OCR Scan     		PDF BC107/108 BCY58/59 2N2483/2484 BC546/547 BCX58 JC500/501 JC546-48 PS3704-3706 MPS3904 PS6513-6515 TRANSISTOR BC 137 TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815

    bd825

    Abstract: BD825-16 bd829-10 BD829
    Text: Philips Semiconductors Product specification NPN power transistors BD825; BD829 FEATURES PINNING • High current max. I A PIN • Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • General purpose


    OCR Scan     		PDF BD825; BD829 O-202; OT128B BD826 BD830. OT128B) BD825 BD829 BD825-16 bd829-10

    bd825

    Abstract: Transistor bd829
    Text: Philips Semiconductors Product specification NPN power transistors BD825; BD829 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • General purpose


    OCR Scan     		PDF BD825; BD829 O-202; OT128B BD826 BD830. T0-202; OT128B) BD825 Transistor bd829

    BD826

    Abstract: BD829 b0825 BD825 BD830 sot128b
    Text: DISCRETE SEMICONDUCTORS ru i n i BD825; BD829 NPN power transistors Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 Philips Semiconductors 1998 May 29 PHILIPS Philips Semiconductors Product specification NPN power transistors


    OCR Scan     		PDF BD825; BD829 T0-202; OT128B BD826 BD830. O-202; BD829 b0825 BD825 BD830 sot128b

    2n2222 2n5401 2n5551

    Abstract: bc107 sot23 bd139 sot23 PHILIPS 2n2222a SOT23 2N3904 sot323 BC108 SOT23 package 2N2369A SOT363 BCY59 cross reference BC108 CROSS REFERENCE BC109 cross reference
    Text: CONVERSION LIST Page General purpose low power 62 Darlingtons 63 Medium power/power 64 Medium frequency 64 Switching 65 High voltage 65 Resistor equipped RETs 66 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE


    OCR Scan     		PDF SC04/CATEGORY SC-59 OT143 OT323 OT363 SC-75 OT223 BC-107 BC108 BC109 2n2222 2n5401 2n5551 bc107 sot23 bd139 sot23 PHILIPS 2n2222a SOT23 2N3904 sot323 BC108 SOT23 package 2N2369A SOT363 BCY59 cross reference BC108 CROSS REFERENCE BC109 cross reference

    bc557

    Abstract: BDX472 BDX452
    Text: Philips Semiconductors Concise Catalogue 1996 Small-signal transistors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS GENERAL-PURPOSE L.F. BIPOLAR TRANSISTORS CONTINUED _ LEADED TYPES ratings type num ber characteristics


    OCR Scan     		PDF BC160 BC161 BC177 BC327 BC328 BC369 BC556 BC557 BC558 BC636 BDX472 BDX452