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    BD24X Search Results

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    American Technical Ceramics Corp TBD-24-XXX

    Off-Delay Time Delay Relay 24V Ac/Dc |Atc TBD-24-XXX
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TBD-24-XXX Bulk 1
    • 1 $208.43
    • 10 $208.43
    • 100 $208.43
    • 1000 $208.43
    • 10000 $208.43
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    BD24X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC200G02 toshiba

    Abstract: TC200G70 bt816 cnh 743 YMUX24H toshiba TC200 CNH 532 TC200E240 Transistor AC 51 0865 75 834 BT16ODFS
    Text: ASIC DATA BOOK TC200G/E SERIES MACROCELLS Non-liner Delay Models 1997 ASIC Data Book TC200G/E SERIES MACROCELLS (Non-linear Delay Models) Published in July, 1996 Document ID: 451V1CA (C) Copyright 1996 TOSHIBA Corporation All Rights Reserved The information contained herein is subject to change without notice. The


    Original     		PDF TC200G/E 451V1CA TC200G02 toshiba TC200G70 bt816 cnh 743 YMUX24H toshiba TC200 CNH 532 TC200E240 Transistor AC 51 0865 75 834 BT16ODFS

    Untitled

    Abstract: No abstract text available
    Text: BD241C NPN , BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features


    Original     		PDF BD241C BD242B BD242C BD242B BD241C BD242C BD241C/D

    Untitled

    Abstract: No abstract text available
    Text: BD243B, BD243C NPN BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80−100 VOLTS 65 WATTS


    Original     		PDF BD243B, BD243C BD244B, BD244C BD244B BD243C,

    BD24x

    Abstract: BD241CG BD242CG
    Text: BD241C NPN , BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features


    Original     		PDF BD241C BD242B BD242C BD241C, BD242C O-220 BD241C/D BD24x BD241CG BD242CG

    Untitled

    Abstract: No abstract text available
    Text: BD241C NPN , BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features


    Original     		PDF BD241C BD242B BD242C BD241C, BD241C/D

    1N5825

    Abstract: BD243B BD243BG BD243C BD243CG BD244B BD244C MSD6100 BD243C APPLICATION
    Text: BD243B, BD243C* NPN BD244B, BD244C* (PNP) BD243C and BD244C are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features http://onsemi.com 6 AMPERE


    Original     		PDF BD243B, BD243C* BD244B, BD244C* BD243C BD244C BD244B BD243C, BD244C 1N5825 BD243B BD243BG BD243CG BD244B MSD6100 BD243C APPLICATION

    BD243CG

    Abstract: WT1D
    Text: BD243B, BD243C NPN BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80−100 VOLTS 65 WATTS


    Original     		PDF BD243B, BD243C BD244B, BD244C BD244B BD243C, BD244C BD244B BD243CG WT1D

    BD241C-D

    Abstract: BD241C BD241CG BD242B BD242BG BD242C BD242CG BD242B equivalent
    Text: BD241C NPN , BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON


    Original     		PDF BD241C BD242B BD242C BD241C BD242C BD241C, O-220 BD241C/D BD241C-D BD241CG BD242B BD242BG BD242CG BD242B equivalent

    BD241C-D

    Abstract: BD241C BD241CG BD242B BD242BG BD242C BD242CG
    Text: BD241C NPN , BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON


    Original     		PDF BD241C BD242B BD242C BD241C BD242C BD241C, O-220 BD241C/D BD241C-D BD241CG BD242B BD242BG BD242CG

    Untitled

    Abstract: No abstract text available
    Text: BD243B, BD243C NPN , BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80−100 VOLTS


    Original     		PDF BD243B, BD243C BD244B, BD244C BD244B BD243C, BD244C

    1N40017

    Abstract: 1a7 sot-23
    Text: BRIDGE Product Part nbrs Case Type BDB-1 DB-1 BDB101-107 DB101-107, S, DB151157,S Case 40 Case 17 Plating Prior to Jan 2005 Post Jan 2005 Lead/ Tin Pb/Sn Tin (Sn) Lead/ Tin (Pb/Sn) Tin (Sn) BR3 BR305-310 Case 22 Tin (Sn) Tin (Sn) BR6 BR605-610 Case 25 Tin (Sn)


    Original     		PDF BDB101-107 DB101-107, DB151157 BR305-310 BR605-610 BR805-810, BR1005- SR3020C-3060C, SR5020C-5060C, SF301C307C, 1N40017 1a7 sot-23

    bd244c

    Abstract: BD243B 1N5825 BD243BG BD243C BD243CG BD244B MSD6100
    Text: BD243B, BD243C* NPN BD244B, BD244C* (PNP) BD243C and BD244C are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS


    Original     		PDF BD243B, BD243C* BD244B, BD244C* BD243C BD244C BD244B BD243C, BD244C BD243B 1N5825 BD243BG BD243CG BD244B MSD6100

    toshiba tc110g

    Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
    Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective


    OCR Scan     		PDF