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    stc 8080A

    Abstract: AM9080A am9080apc 8080A 8080A-1 8080A-1B 8080A-2 8080A-2B 8080AB TF-02
    Text: 8080A/Am9080A DISTINCTIVE CHARACTERISTICS • • • High-speed version with 1,3/jsec instruction cycle Military temperature range operation to 1.5/isec Ion-implanted, n-channel, silicon-gate MOS technology • • • 3.2mA of output drive at 0.4V two full TTL loads


    OCR Scan     		PDF Am9080A 700mV 400mV 820mW V0806WV/V0808 Am9080A-1 080A-1 Am9080A-2 080A-2 stc 8080A am9080apc 8080A 8080A-1 8080A-1B 8080A-2 8080A-2B 8080AB TF-02

    8080A-1

    Abstract: 8080AB AM9080A stc 8080A 8080A-1B 8080A-2 8080A-2B pd8080a BD003800
    Text: 8080 A/Am9080 A DISTINCTIVE CHARACTERISTICS • • • High-speed version with 1. 3/asec instruction cycle M ilitary tem perature range operation to 1.5/isec Ion-im planted, n-channel, silicon-gate MOS technology • • • 3.2m A of output drive at 0.4V two full TTL loads


    OCR Scan     		PDF 080A/Am9080A 700mV 400mV 820mW V0806WV/V0808 Am9080A-1 080A-1 Am9080A-2 080A-2 Am9080A 8080A-1 8080AB stc 8080A 8080A-1B 8080A-2 8080A-2B pd8080a BD003800

    AM9080A

    Abstract: 8080A 8080A-1 8080A-1B 8080A-2 8080A-2B 8080AB
    Text: 8080 A/Am9080 A DISTINCTIVE CHARACTERISTICS • • • High-speed version with 1. 3/asec instruction cycle M ilitary tem perature range operation to 1.5/isec Ion-im planted, n-channel, silicon-gate MOS technology • • • 3.2m A of output drive at 0.4V two full TTL loads


    OCR Scan     		PDF 080A/Am9080A 700mV 400mV 820mW Am9080A-1 080A-1 Am9080A-2 080A-2 Am9080A 8080A 8080A-1 8080A-1B 8080A-2 8080A-2B 8080AB