transistor bd 292
Abstract: BD240C 20mH 1A power transistor bd
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C BPL TO-220 Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier Applications,Series And Shunt Regulators, Driver And Output Stages of HI-FI Amplifiers
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O-220
25deg
C-120
transistor bd 292
BD240C
20mH 1A
power transistor bd
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transistor bd 292
Abstract: cdil bd 140 BD240C
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C BPL TO-220 Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier
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O-220
25deg
C-120
transistor bd 292
cdil bd 140
BD240C
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Untitled
Abstract: No abstract text available
Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic ‘ Collector Base Voltage : BD176 : BD178 : BD180 Collector Emitter Voltage
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BD176/178/180
BD176
BD178
BD180
BD176
BD178
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Untitled
Abstract: No abstract text available
Text: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol BD234 Rating VcBO BD236 BD238 Collector Emitter Voltage
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OCR Scan
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BD234/236/238
BD234
BD236
BD238
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60V transistor npn 1a
Abstract: No abstract text available
Text: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage : BD233 Symbol Rating VcBO : BD235 : BD237 Unit 45 V
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BD233/235/237
BD235
BD237
BD233
60V transistor npn 1a
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bd237
Abstract: BD233
Text: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units
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BD233/235/237
O-126
BD233
BD235
BD237
bd237
BD233
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bd175
Abstract: bd177
Text: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO
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Original
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BD175/177/179
O-126
BD175
BD177
BD179
BD179
bd175
bd177
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BD178
Abstract: BD176 BD180 transistor bd176
Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
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Original
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BD176/178/180
O-126
BD176
BD178
BD180
BD178
BD176
BD180
transistor bd176
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PDF
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transistor BD 325
Abstract: BD235STU
Text: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
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Original
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BD233/235/237
O-126
BD233
BD235
BD237
transistor BD 325
BD235STU
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BD175
Abstract: No abstract text available
Text: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
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Original
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BD175/177/179
O-126
BD175
BD177
BD179
BD179
BD175
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PDF
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transistor BD 325
Abstract: No abstract text available
Text: BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
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Original
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BD234/236/238
O-126
BD234
BD236
BD238
transistor BD 325
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BD233
Abstract: BD235 BD237
Text: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
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Original
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BD233/235/237
O-126
BD233
BD235
BD237
BD233
BD235
BD237
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PDF
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transistor bd176
Abstract: BD176 BD178 BD180 transistor BD 325
Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
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Original
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BD176/178/180
O-126
BD176
BD178
BD180
transistor bd176
BD176
BD178
BD180
transistor BD 325
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PDF
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equivalent bd177
Abstract: BD175 BD177 BD179
Text: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
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Original
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BD175/177/179
O-126
BD175
BD177
BD179
equivalent bd177
BD175
BD177
BD179
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BD176
Abstract: transistor bd176
Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
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Original
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BD176/178/180
O-126
BD176
BD178
BD180
BD180
BD176
transistor bd176
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PDF
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BD234
Abstract: bd238 equivalent BD236 BD238
Text: BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
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Original
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BD234/236/238
O-126
BD234
BD236
BD238
BD234
bd238 equivalent
BD236
BD238
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PDF
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BD178
Abstract: BD176 BD180
Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
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Original
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BD176/178/180
O-126
BD176
BD178
BD180
BD178
BD176
BD180
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PDF
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bd234
Abstract: No abstract text available
Text: BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
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Original
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BD234/236/238
O-126
BD234
BD236
BD238
bd234
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PDF
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Untitled
Abstract: No abstract text available
Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
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Original
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BD176/178/180
O-126
BD176
BD178
BD180
BD180
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PDF
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bd177
Abstract: BD175
Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 176/178/180 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 45 V BD177 60 V BD179 80 V 45 V BD177 60 V BD179 80 V BD175
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OCR Scan
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BD175/177/179
BD175
BD177
BD179
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PDF
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transistor BC SERIES
Abstract: bd transistor series BC transistor series BIPOLAR TRANSISTOR 2n transistor KSA transistor D.A.T.A. book ksd transistor series bd transistor data book
Text: TRANSISTOR DATA BOOK Small Signal TR KSA Ser es KSB Ser es KSC Ser es KSD Ser es KSK Ser es KSR Ser es 2N Ser es BC Ser es KST Ser es KSP Ser es SS Ser es Bipolar Power TR KSA Series KSB Series KSC Series KSD Series BD Series BU Series KSH Series KSE Series
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microwave oscillator
Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE568 NE56854
Text: NEC/ BD CALIFOR NIA OODOlET 3 | 6427414 N E C/ CALIFORNIA ' 30C 00129 D 7 C 3 / — 23 MICROWAVE TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES DESCRIPTIONAND APPLICATIONS • T h e N E568 S e r i e s o f NPN silic o n medium pow e r t r a n HIGH fS
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3/w23
NE568
200mW
NE568
NE56855
NES6851
microwave oscillator
transistor code 458 055
2SC2339
1357 transistor NEC
2SC2342
transistor code 2sc2342
bd 743 transistor
NEC 1357
NE56854
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Untitled
Abstract: No abstract text available
Text: b3 L 7 E S M Q l G l bD l 2 53 M f l O T b Order this data sheet by MUN5111T1/D MOTOROLA SEMICONDUCTOR H TECHNICAL DATA Bias Resistor TVansistor PNP Silicon Surface Mount Transistor With Monolithic Bias Resistor N etw ork This new series of digital transistors is designed to replace a single device and
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MUN5111T1/D
SC-70/SOT-323
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
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Low Power PWM controller 6-pin
Abstract: pin diagram of 8355 6pin pwm PWM controller 6-pin 8355 pin and block diagram Voltage Regulator SOT-23-5 S-8357N50MC-O3J-T2 S-8358H30MC-NUP-T2 sot-23-5 fet S-8355M55MC-MDO-T2
Text: POWER SUPPLY ICs SUPER-SMALL PACKAGE PWM CONTROL, PWM/PFM CONTROL STEP-UP SWITCHING REGULATOR The S-8355/56/57/58 series is a CMOS step-up switching regulator which consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation
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S-8355/56/57/58
S-8355/57)
S-8356/58)
S-8355/57
S-8355KxxMC/BD,
S-8355LxxMC/BD,
S-8355MxxMC/BD,
S-8355QxxMC/BD
S-8356KxxMC/BD,
S-8356LxxMC/BD,
Low Power PWM controller 6-pin
pin diagram of 8355
6pin pwm
PWM controller 6-pin
8355 pin and block diagram
Voltage Regulator SOT-23-5
S-8357N50MC-O3J-T2
S-8358H30MC-NUP-T2
sot-23-5 fet
S-8355M55MC-MDO-T2
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