B0646
Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660
Text: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington
|
OCR Scan
|
fl23Sb05
DQ43CI1
T-33-31
OP-66)
644/BD
BD648,
BD644.
BO646.
BO648.
BD660
B0646
BO650
80846
B0648
Bo648
bd648
D237 DIODE
BD646
Q62702-D235
BD660
|
PDF
|
bd 640
Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
Text: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington
|
OCR Scan
|
23SbOS
DQ043C
T-33-31
OP-66)
U4J94
BD644,
BD648,
BD650
bd 640
TOP-66
646 af
bd640
BO 648
bd648
diode 648
648 diode
BD 650
bd650
|
PDF
|
BD 650
Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
Text: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
|
OCR Scan
|
|
PDF
|
BD 649
Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
Text: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
|
OCR Scan
|
|
PDF
|
BO 649
Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Text: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington
|
OCR Scan
|
0235bQS
T-33-29
OP-66)
643/BD
645/BD
BD643.
0QQ43
T-33-29
BD647
BO 649
BD 104
darlington bd 645
TOP-66
b 647 c
BD 649
BD64S
Q62702-D376
BD 104 NPN
|
PDF
|
SDT 9202
Abstract: bdx 338 BU 450 bdx
Text: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74
|
OCR Scan
|
|
PDF
|
philips BDV64A
Abstract: BDX67
Text: N AflER P H I L I P S / D I S C R E T E ESE D • bb53T31 DOltjEl? b ■ T - £ 7 -3-? Power Devices LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN PNP PACKAGE OUTLINE fC (D C )(1) V CE0 MINIMUM hpg at f(* ^ (ty p O a t V C E(s»t)
|
OCR Scan
|
bb53T31
TIP110
TIP111
TIP112
TIP115
TIP116
TIP117
O-220AB
BD679
BD681
philips BDV64A
BDX67
|
PDF
|
Untitled
Abstract: No abstract text available
Text: POWER TRANSISTORS GENERAL CASES: GENERAL TO- 3 F - 22 PURPOSE TRANSISTORS pt o t T r^ E S ^ W ! NPN PNP 115 : 2N 5874 : 2N 5874A 115 115 ! 2N 5874B 1 2N 5875 150 ! 2N 5875/1 150 150 : 2N 5875/2 150 1 2N 5876 ! 2N 5876A 150 150 ! 2N 5876B 150 : 2N 5877 150
|
OCR Scan
|
5874B
5876B
5878B
O-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 4B8F8D7 BA123 B4B !7B69D8 " # $ %&4 B989B3'778 $7 B ( 4D9A 8F8D7 BA123 B4B !7B69D8 " # $ %&4 C77777BD246A4E5 62*)%+
|
Original
|
1789AB2CDE7B37FD
989B3
C77777
246A4E5
A89-7B.
B1323B.
7BA79ED
-B32B123456B
DE7B9AAB47
-B32B123456B!
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123B5 BA123B5B 7B69D8 !5 "989B3#778 7$%B&% 4D9A E8D9AB'B1A8DF9 78 BA123B5B 7B69D8 !5 C77777BD246A4E5 62 &&B4 *
|
Original
|
1789AB2CDE7B37FD
989B3
C77777
246A4E5
B123456
B/301B,
A79ED
B30B123456B
B9A87
EB123456
|
PDF
|
bd 7785
Abstract: No abstract text available
Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123B5 BA123B5B 7B69D8 !"5 989B3#778 7$%B!% 4D9A E8D9AB&B1A8DF9'78 BA123B5B 7B69D8 !"5 C77777BD246A4E5 *
|
Original
|
1789AB2CDE7B37FD
989B3
C77777
246A4E5
B123456
B/301B,
A79ED
B30B123456B
B9A87
EB123456
bd 7785
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123B5 BA123B5B 7B69D8 C !5 "989B3#778 7$%B % 4D9A E8D9AB&B1A8DF9'78 BA123B5B 7B69D8 !5 B !5)B * !5 C77777BD246A4E5
|
Original
|
1789AB2CDE7B37FD
989B3
C77777
246A4E5
A89/7B0
B123456
B2334B0
7B7C07
A79ED
/B33B123456B
|
PDF
|
TRansistor 648
Abstract: power factor PIC circuit transistor bd646 BD646 lco8a LCO 8A BD650 LE17 BD645 BD649
Text: MAGNA Magna Park, Coventry Road, Lutterworth Leicestershire LE17 4JB, England Sales telephone: 01455 554711 Adm in telephone: 01455 552505 Fax: 01455 558843 FS » 2 3 » BD646; 648 BD650; 652 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n o lith ic D arlin gton c irc u it fo r audio o u tp u t stages and general
|
OCR Scan
|
BD646;
BD650;
T0-220
BD645,
BD647,
BD649
BD651.
BD646
Junc650;
7Z67332
TRansistor 648
power factor PIC circuit
transistor bd646
lco8a
LCO 8A
BD650
LE17
BD645
|
PDF
|
BGA95
Abstract: No abstract text available
Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123B4B BA123B4BB 7B69D8 ! C "## 4 989B3$778 "7%&B& 4D9A !E8D9AB'B1A8DF9 78 BA123B4BB 7B69D8 ! "## 4*B! + "## 4*B! "## 4 ! , "## 4*B! ! "## 4
|
Original
|
1789AB2CDE7B37FD
989B3
C77777
246A4E5
A8937B4
B6378B4
7EB92B!
7B7C47
7BA79ED
3B37B123456B
BGA95
|
PDF
|
|
|
5B8D
Abstract: No abstract text available
Text: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 A123B4B BA123 BB4B 7B69D8 ! C"#$ 4B 989B3%778B989B3%778 "7&'B '( 4D9A !E8D9AB B1A8DF9*78 ! +"#$ 4B,B! -"#$ 4B,B! "#$ 4 ! ."#$ 4B,B! !"#$ 4
|
Original
|
1789AB2CDE7B37FD
A123B
989B3
C77777
246A4E5
A8957B6
7B7C67
7BA79ED
5B39B123456B
5B8D
|
PDF
|
652 smd
Abstract: BDS650 IR P 648 H BDS644 BDS646 BDS648 BDS652
Text: PHILIPS INTERNATIONAL SbE » • 71iaâSb~0GM31SS M73 mTtmT Philips Components Data sheet status P rod uct specification date of issue April 1991 B D S 6 4 4 /6 4 6 /6 4 8 /6 5 0 /6 5 2 PNP Silicon Darlington power transistors PIN N IN G - SOT223 DESCRIPTIO N
|
OCR Scan
|
711002b
bds644/646/648/650/652
OT223)
BDS643/645/647/649/651.
BDS644
BDS646
BDS648
BDS650
BDS652
652 smd
IR P 648 H
|
PDF
|
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
|
OCR Scan
|
CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
|
PDF
|
cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
|
OCR Scan
|
AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1234 1 4 !"4#$4%5 &"BD7B5D59EDF567897AC5E'7E87A5 5855! E8E59BB8 1AF(8D7E'5$6BD5 A8D' 1 4 !"4#$4%5 &D7B5 E85"BD7B
|
Original
|
12345678957A8BCDE8BF5F7
FB57A5
D59EDF5
97AC5E
87AC5+
5EAF52DD5
97AC5'
BDE87AC5DEACB5
|
PDF
|
4BE67
Abstract: C356D E5 0D E7834
Text: 123456789 ABC9ADEDF9B9CED9 D9 DF 9B 9AD FD9 1 A 23435671839A5BCDBE41 36D5391 "04A!1 %2AD4D92A4346A,84D84A5673DF4.A 2A75A904A.D482A567E4.D84A5746A646D64FA97A DC54C489A 2A E7C52E9A 42.7A 97A .4A 0D40A 62D97A 64346A .79D78A 29A 28A 4+964C47A
|
Original
|
23435671839A5BCDBE41
D4D92
84D84A5673DF4
A75A904A
A567E4.
D84A57
46A646
D64FA97A
4C489A
E7C52E9
4BE67
C356D
E5 0D
E7834
|
PDF
|
MCF5206
Abstract: No abstract text available
Text: SECTION 6 BUS OPERATION The MCF5206 bus interface supports synchronous data transfers that can be terminated synchronously or asynchronously and burst or burst-inhibited between the MCF5206 and other devices in the system. This section describes the function of the bus, the signals that
|
OCR Scan
|
MCF5206
|
PDF
|
LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
|
OCR Scan
|
|
PDF
|
TFK 680 CNY 70
Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.
|
OCR Scan
|
|
PDF
|
hp ms 7647
Abstract: harris 7644 la 7646 764X ICL764X 187Ly 7646 7647
Text: S i. It 2 >991 IC L 6 4 4 /6 4 5 /646/647 IC L 7 6 4 4 /7 645/7646/7647 2 HARRIS July 1991 Low V o lta g e S te p -U p C o n verters F e a tu re s D e s c rip tio n • +5V @ 40mA From a Single Cell Battery The ICL644, IC L645 and IC L646 are low pow er fixed +5V
|
OCR Scan
|
ICL644/645/646/647
CL7644/7645/7646/7647
MAX65X
4-20mA
ICL644,
hp ms 7647
harris 7644
la 7646
764X
ICL764X
187Ly
7646
7647
|
PDF
|
