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    BD 5817 Search Results

    BD 5817 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    65817-003LF Amphenol Communications Solutions PV® Wire-to-Board Connector System, Mini Latch Housing, Double Row, Bulkhead, 26 Positions, 2.54 mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    65817-004LF Amphenol Communications Solutions PV® Wire-to-Board Connector System, Mini Latch Housing, Double Row, Bulkhead, 32 Positions, 2.54 mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    65817-014LF Amphenol Communications Solutions PV® Wire-to-Board Connector System, Mini Latch Housing, Double Row, Bulkhead, 22 Positions, 2.54 mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    65817-018LF Amphenol Communications Solutions PV® Wire-to-Board Connector System, Mini Latch Housing, Double Row, Bulkhead, 34 Positions, 2.54 mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    65817-015LF Amphenol Communications Solutions PV® Wire-to-Board Connector System, Mini Latch Housing, Double Row, Bulkhead, 24 Positions, 2.54 mm (0.100in) Pitch. Visit Amphenol Communications Solutions

    BD 5817 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NCP2820 Series 2.65 W Filterless Class-D Audio Power Amplifier http://onsemi.com MARKING DIAGRAMS 1 9−PIN FLIP−CHIP CSP FC SUFFIX CASE 499AL C1 xx A Y WW G • • • • • • • • • • • = AQ for NCP2820 = BD for NCP2820A = Assembly Location


    Original     		PDF NCP2820 NCP2820/D

    Untitled

    Abstract: No abstract text available
    Text: NCP2820 Series 2.65 W Filterless Class-D Audio Power Amplifier http://onsemi.com MARKING DIAGRAMS 1 9−PIN FLIP−CHIP CSP FC SUFFIX CASE 499AL C1 xx A Y WW G • • • • • • • • • • • • = AQ for NCP2820 = BD for NCP2820A = Assembly Location


    Original     		PDF NCP2820 499AL NCP2820 NCP2820A NCP2820A NCP2820/D

    433T

    Abstract: u413 3D2J
    Text: 31;~} ;854/ ;<,<0 :0,5,@ 1EBQROEP Z IfX[ mfckX^\ 7;S@B kf 773S@B/ cfX[ Zlii\ek 5@ Z C`\c\Zki`Z jki\e^k_ 7333S Z DJB g\i]fidXeZ\ d\\kj BD i\hl`i\d\ek Z ClXc `e0c`e\ MBA gXZbX^\ Z OfGP Zfdgc`Xek 479=< ,QX ? 58 2070:,5 ,QX ? 58 - Heglk mfckX^\ iXe^\ Jljk Lg\iXk\ SfckX^\


    Original     		PDF 7333S 48SCB 48SCB 65SCB 7333S 83Gq293Gq/4d 4333J 833SCB 433T u413 3D2J

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NCV73810V2GEVB NCV7381 FlexRay Bus Driver Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Introduction allows users immediately start with the NCV7381 FlexRay Bus Driver. The MCU is preprogrammed with a firmware which provides simple mode control and FlexRay


    Original     		PDF NCV73810V2GEVB NCV7381 NCV7381 EVBUM2037/D

    BD136

    Abstract: BD136G BD136 pin BD140 pnp transistor BD140 application circuits circuits bd136 N BD138G
    Text: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features


    Original     		PDF BD136, BD138, BD140 BD136 BD138 O-225 BD136G BD136 pin BD140 pnp transistor BD140 application circuits circuits bd136 N BD138G

    Untitled

    Abstract: No abstract text available
    Text: MMFT2N25E Product Preview High Energy Power FET N−Channel Enhancement−Mode Silicon Gate http://onsemi.com This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast recovery


    Original     		PDF MMFT2N25E MMFT2N25E/D

    Untitled

    Abstract: No abstract text available
    Text: MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • • • • • High Collector−Emitter Sustaining Voltage


    Original     		PDF MMJT350T1G AEC-Q101 OT-223 MMJT350T1/D

    SMMJT350T1G

    Abstract: marking code E3 sot223 306 marking code transistor
    Text: MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −


    Original     		PDF MMJT350T1G, SMMJT350T1G AEC-Q101 MMJT350T1/D marking code E3 sot223 306 marking code transistor

    MMJT

    Abstract: No abstract text available
    Text: MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −


    Original     		PDF MMJT350T1G, SMMJT350T1G MMJT350T1/D MMJT

    Untitled

    Abstract: No abstract text available
    Text: MMJT9410 Bipolar Power Transistors NPN Silicon Features • SOT−223 Surface Mount Packaging • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS


    Original     		PDF MMJT9410 OT-223 MMJT9410/D

    Untitled

    Abstract: No abstract text available
    Text: NSS40301MZ4, NSV40301MZ4T1G Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS40301MZ4, NSV40301MZ4T1G NSS40301MZ4/D

    4030p

    Abstract: NJV4030PT1G
    Text: NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http://onsemi.com Features PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −


    Original     		PDF NJT4030P, NJV4030PT1G, NJV4030PT3G OT-223 AEC-Q101 NJT4030P/D 4030p NJV4030PT1G

    NSV40301

    Abstract: No abstract text available
    Text: NSS40301MZ4, NSV40301MZ4T1G Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS40301MZ4, NSV40301MZ4T1G NSS40301MZ4/D NSV40301

    Untitled

    Abstract: No abstract text available
    Text: NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS40300MZ4 NSS40300MZ4/D

    Untitled

    Abstract: No abstract text available
    Text: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −


    Original     		PDF NJT4031N, NJV4031NT1G, NJV4031NT3G NJT4031N/D

    4031N

    Abstract: NJV4031NT1G NJV4031NT3G
    Text: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain − = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc


    Original     		PDF NJT4031N, NJV4031NT1G, NJV4031NT3G OT-223 AEC-Q101 NJT4031N/D 4031N NJV4031NT1G

    4030p

    Abstract: No abstract text available
    Text: NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http://onsemi.com Features PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −


    Original     		PDF NJT4030P, NJV4030PT1G, NJV4030PT3G NJT4030P/D 4030p

    Untitled

    Abstract: No abstract text available
    Text: NSS40300MZ4, NSV40300MZ4T1G Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS40300MZ4, NSV40300MZ4T1G NSS40300MZ4/D

    Untitled

    Abstract: No abstract text available
    Text: NSS40300MZ4, NSV40300MZ4T1G Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS40300MZ4, NSV40300MZ4T1G NSS40300MZ4/D

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


    OCR Scan     		PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


    OCR Scan     		PDF 76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram