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    BD 246 Price and Stock

    Bourns Inc BD246A-S

    TRANS PNP 60V 10A SOT93
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    Bourns Inc BD246B-S

    TRANS PNP 80V 10A SOT93
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    Bourns Inc BD246C-S

    TRANS PNP 100V 10A SOT93
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    Avnet Abacus BD246C-S 143 Weeks 6,000
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    Carling Technologies PBB-BD-24-616-15D-AA

    CIRCUIT BREAKER GFCI
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    Carling Technologies PBA-BD-24-620-5AA-AG

    CIRCUIT BREAKER GFCI
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    BD 246 Datasheets (76)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BD246 Bourns PNP SILICON POWER TRANSISTORS Original PDF
    BD246 Power Innovations PNP SILICON POWER TRANSISTOR Original PDF
    BD246 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD246 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD246 Unknown Transistor Replacements Scan PDF
    BD246 Unknown Cross Reference Datasheet Scan PDF
    BD246 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BD246 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BD246 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD246 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BD246 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD246 Texas Instruments The Power Semiconductor Data Book 1974 Scan PDF
    BD246 Texas Instruments Discrete Devices 1978 Scan PDF
    BD246 Texas Instruments Supply Division Product Catalogue 1978/79 Scan PDF
    BD246 Transys Electronics BJT, PNP, Power Transistor, IC 10A Scan PDF
    BD246 Transys Electronics PNP SILICON POWER TRANSISTORS Scan PDF
    BD246A Bourns PNP SILICON POWER TRANSISTORS Original PDF
    BD246A Power Innovations PNP SILICON POWER TRANSISTOR Original PDF
    BD246A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD246A Unknown Shortform Transistor PDF Datasheet Short Form PDF

    BD 246 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pin configuration transistor bd140

    Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139


    Original     		PDF BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog MKDSF 3/ 8 2468 BD:4,3,2,1SO Order No.: 1732843 Product notes WEEE/RoHS-compliant since: 01/01/2003 Commercial data EAN 4017918258931 Pack 50 pcs.


    Original     		PDF

    MPC823

    Abstract: MPC823 user manual
    Text: SECTION 24 TERMINOLOGY ACRONYMS, MNEMONICS, AND UNITS OF MEASURE MOTOROLA MPC823 USER’S MANUAL 24 TERMINOLOGY µs—Microsecond APG—Access Protection Group ASID—Address Space ID BD—Buffer Descriptor BRG—Baud Rate Generator CCITT—International Telegraph and Telephone Consultative Committee


    Original     		PDF MPC823 MPC823 user manual

    P1027

    Abstract: P1027-BD ka-band transistor 30SPA0536 DM6030HK XP1027-BD XP1027-BD-000V XP1027-BD-EV1 VG07
    Text: 27.0-31.0 GHz GaAs MMIC Power Amplifier P1027-BD January 2010 - Rev 25-Jan-10 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.5 dBm Saturated Output Power +43.0 dBm Output Third Order Intercept OIP3


    Original     		PDF P1027-BD 25-Jan-10 MIL-STD-883 XP1027-BD P1027 P1027-BD ka-band transistor 30SPA0536 DM6030HK XP1027-BD-000V XP1027-BD-EV1 VG07

    Untitled

    Abstract: No abstract text available
    Text: 27.0-31.0 GHz GaAs MMIC Power Amplifier P1027-BD March 2009 - Rev 11-Mar-09 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.5 dBm Saturated Output Power +43.0 dBm Output Third Order Intercept OIP3


    Original     		PDF P1027-BD 11-Mar-09 MIL-STD-883 XP1027-BD-000V XP1027-BD-EV1 XP1027-BD

    PEX8114-BC13BI G

    Abstract: pex8114 PEX8114-BD13BIG pex 8112 PEX8114-BC13 196 PBGA plx VHDL CODE FOR 16 bit LFSR in PRBS PEX8114-BD13BI PEX8114BD
    Text: ExpressLane PEX 8114-BC/BD PCI Express-to-PCI/PCI-X Bridge Data Book Version 3.2 September 2010 Website www.plxtech.com Technical Support www.plxtech.com/support Phone 800 759-3735 408 774-9060 FAX 408 774-2169 Copyright 2010 by PLX Technology, Inc. All Rights Reserved – Version 3.2


    Original     		PDF 8114-BC/BD 8114-BC/BD PEX8114-BC13BI G pex8114 PEX8114-BD13BIG pex 8112 PEX8114-BC13 196 PBGA plx VHDL CODE FOR 16 bit LFSR in PRBS PEX8114-BD13BI PEX8114BD

    30SPA0536

    Abstract: XP1027-BD XP1027-BD-000V XP1027-BD-EV1
    Text: XP1027-BD Power Amplifier 27.0-31.0 GHz Rev. V1 Features Chip Device Layout • Ka-Band 4 W Power Amplifier  Balanced Design Provides Good Input/Output Match  21.0 dB Small Signal Gain  +35.5 dBm Saturated Output Power  +43.0 dBm Output Third Order Intercept OIP3


    Original     		PDF XP1027-BD MIL-STD-883 30SPA0536 XP1027-BD XP1027-BD-000V XP1027-BD-EV1

    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. ± 20% Inductance 100 kHz/ 10 mA L 250 nH Rated inductance 100 kHz/ 10 mA/ 25 A LR 246 nH typ. Rated current ∆T = 40 K IR 25.0 A max.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. ± 20% Inductance 100 kHz/ 10 mA L 250 nH Rated inductance 100 kHz/ 10 mA/ 25 A LR 246 µH typ. Rated current ∆T = 40 K IR 27.0 A max.


    Original     		PDF

    bd5460

    Abstract: B0243 BD250 B0245A B0246 B0544 BD239 BD245C BD545B BD239A
    Text: T e x a s In s t r u m e n t s 2-6A Up to 65W T O -6 6 Plastic Packages Characteristics Tcase = 2 5 'C M a x Ratings at Tease = 2 b - C >» Device Type BD239 BD 239A BD239B BD 239C BD240 B0240A BD 240B BD 240C B D 24 1 BD 241A BD241B BD 241C BD242 BD 242A


    OCR Scan     		PDF Tease-25-C BD239 BD239A BD239B BD239C BD240 BD240A BD240B BD240C BD241 bd5460 B0243 BD250 B0245A B0246 B0544 BD245C BD545B

    TIP 34 pnp

    Abstract: TIP NPN TIP 29 transistor TIP 31 Transistor tip 40 BD PNP TO-3P tip 30 Transistors tip 29 tip 30c
    Text: SlU ZIU M -K O M PLEM ENTARE-LEISTU N G STR ANSISTO REN Allgemeine und NF-Anwendungen SILICON COM PLEM ENTARY POW ER TRANSISTORS (General and Low-frequency Applications) 3-4 Ptot <a) T c = 25 °C (100 oc) W (a) |C Typ type NPN PNP BD BD BD BD 239 239 A 239 B


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: AMP INCORPORATED Harrisburg, Pa. 17105 REV REASON A 1. C U S T O M E R H O T L IN E 1 800 722-1111 APPLICATION I in 01c SPECIFICATION I 114- ' 0015 AMP* “M” SERIES 104-POSITION RFI/EMISHIELDED CONNECTORS ECN BD-2460 ENGINEERING R ELEASE D A TE 3 -2 8 -8 9


    OCR Scan     		PDF BD-2460 104-POSITION

    dt5 tuner module

    Abstract: op102 ITT Semiconductors D78P0 D0122 ddt237
    Text: \ USER’S MANUAL NEC ¿¿PD78023 ¿¿PD78024 ¿¿PD78P024 Document No. IEU-1373A O. D. No. IEU-842A Date Published February 1995 P Printed in Japan NEC Corporation 1994 b427525 Q Q' I BD' n bSS NOTES FOR CMOS D EVICES PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


    OCR Scan     		PDF uPD78023 uPD78024 uPD78P024 IEU-1373A IEU-842A) b427525 devices-9800 SxxxxFE9000 /iSxxxxFT9080 FI78K0 dt5 tuner module op102 ITT Semiconductors D78P0 D0122 ddt237

    BD 509 plug

    Abstract: A109 HDP-22 MIL-T-10727 B 892 s 748471-1
    Text: 4 THIS DRAWING IS UNPUBLISHED. C RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ,19 LOC ALL RIGHTS RESERVED. BD REVISIONS DI ST 48 LTR B DESCRIPTION DATE DUN APVD REDRAWN W/O CHANGE PER EC 0020-1094-95 02 NOV 95 2.64+0.05 R [.104 +.002] TYP D


    OCR Scan     		PDF HDP-22, 09MAY94 amp3S397 e/ssrv02Gd/dsk01/dept4023/amp3S397/edmmod BD 509 plug A109 HDP-22 MIL-T-10727 B 892 s 748471-1

    BD139

    Abstract: transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors
    Text: BD 139 NPIM-EPITAXIAL-PLANAR-SILICON-TRANSISTOR • • • • • Driver fo r Audio A m plifier Active Convergenz Regulators Power Switching Pt o t = 6.5 W at T g = 60 oc • hFE > 40 at !C = - 1 5 0 mA • VcE sat < - 0 .5 V at lc = - 0 .5 A mechanical data


    OCR Scan     		PDF BD139 40PEP 80PEP OT-32 OT-32 O-66P BD139 transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors

    BD4702

    Abstract: No abstract text available
    Text: DRAWING MADE THIS DRAWING IN 4 THIRD ANGL E IS UNPUBLISHED. COPYRIGHT 19 PROJECTION RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL LOC 19 BD IN TERNATIO NAL RIGHTS RESERVED. D IS T 50 R EV IS IO N S LTR ZONE DE SC R I P T I O N REDRAWN, DATE REVISED PER ECN BD4702


    OCR Scan     		PDF BD4702 BD4955 BD5592 -SEP-97 arnfD38 585/ed BD4702

    b57 diode

    Abstract: M3245 M3244 diode 1123 07s BR211 BR211-100 M3243 BI 1123 M324
    Text: 5bE D • 7110flSb 0G410 bD ÛÔ4 D E V E LO P M E N T DATA IPHIN T -M -2 L 3 - BR211 SERIES T h is data sheet contains advance Inform ation and specifications are subject to change w ith o u t notice. PHILIPS 5bE D ^ INTERN A T I O N A L UN BREAKOVER DIODES


    OCR Scan     		PDF 7110flSb 0G410bD BR211 BR211-100 b57 diode M3245 M3244 diode 1123 07s M3243 BI 1123 M324

    Untitled

    Abstract: No abstract text available
    Text: S7E » • FAGOR 3 4 5 ^ 32 5 0 0 00 BD 1 4TS WÊFGRS, lOClOOO. B380C1000 B40C1000. FA ûO R E L E C T R O N I C S Amp. Silicon Bridge Rectifiers in Plastic C Dimensions in mm. Voltage 100 to 900 V. Sufihx "A" 4 "B" 3 Current 1.0 A. • In process of evaluation UL 1449


    OCR Scan     		PDF B40C1000. B380C1000 C1000 C1000 DO-201AE DO-201

    Untitled

    Abstract: No abstract text available
    Text: 4 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS U N P U B L I S H E D COPYRIGHT 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. LÛC ,19 DIST BD ALL INTERNATIONAL RIGHT5 RESERVED. REVISIONS 48 ZONE LTR c D D + DATE D ES C RIP TIO N


    OCR Scan     		PDF BD-3Q47 BD6245 2JWUL-95 14023/am

    BD NPN transistors

    Abstract: BD 139 140 BD - 100 V BD139-6 BD139 bd 139 package BD244 BD249 BDX15 Tc Bd 139
    Text: Typ type f MHz vcc 2N 2N 2N 2N 150 400 400 50 13 28 26 12,5 5713 5773 5774 5848 Pout bvcbo bvceo Gehause package 3,4 0,12 1 3,25 11 1,5 8 20 60 65 65 48 40 35 35 24 TO-128 TO-117 TO-129 145 v CEO mm V 'CD max A mm hpE max 45 60 80 1 1 1 40 40 40 250 160 160


    OCR Scan     		PDF O-128 O-117 O-129 BD NPN transistors BD 139 140 BD - 100 V BD139-6 BD139 bd 139 package BD244 BD249 BDX15 Tc Bd 139

    bd 3055

    Abstract: BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128
    Text: Typ type f MHz vcc 2N 2N 2N 2N 150 400 400 50 13 28 26 12,5 5713 5773 5774 5848 Pout bvcbo bvceo Gehause package 3,4 0,12 1 3,25 11 1,5 8 20 60 65 65 48 40 35 35 24 TO-128 TO-117 TO-129 145 v CEO mm V 'CD max A mm hpE max 45 60 80 1 1 1 40 40 40 250 160 160


    OCR Scan     		PDF O-128 O-117 O-129 40PEP 80PEP OT-32 OT-32 O-66P bd 3055 BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128

    TIP 29 transistor

    Abstract: BD239 TEXAS INSTRUMENTS B0239 transistor BD 140 transistor tip 3055 TIP 32 transistor tip 30 tip 226 Tip 3054 transistor TIP 32
    Text: BD239, BD239A, BD239B, BD239C FOR POWER AM PLIFIER AN D HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD240A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current M in f T o f 3 MHz at 10 V , 200 mA mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted


    OCR Scan     		PDF BD239, BD239A, BD239B, BD239C BD240A-C BD239 BD239A BD239B 40PEP TIP 29 transistor BD239 TEXAS INSTRUMENTS B0239 transistor BD 140 transistor tip 3055 TIP 32 transistor tip 30 tip 226 Tip 3054 transistor TIP 32

    BD249 TEXAS INSTRUMENTS

    Abstract: BD149 BD249C TEXAS INSTRUMENTS B0249C bd249 B0249A 3055 5C pnp transistor B0249 BD149A BD249A
    Text: BD249, BD249A, BD249B, BD249C FOR POW ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATIO N S DESIGN ED FOR CO M PLEM EN TARY USE WITH BD250A-C 125 W at 25 ° C Case Temperature 25 A Rated Collector Current Min fT of 3 MHz at 10 V, 1 A mechanical data TO-3P


    OCR Scan     		PDF BD249, BD249A, BD249B, BD249C BD250A-C BD249 BD149A BD249B 40PEP BD249 TEXAS INSTRUMENTS BD149 BD249C TEXAS INSTRUMENTS B0249C B0249A 3055 5C pnp transistor B0249 BD249A

    transistor BD245

    Abstract: TIP 48 transistor TIP 32 transistor transistor TIP 32 npn transistor bd243c TIP 34 pnp BD242 BD242A BD242B TO-3P
    Text: B0242, BD242A, BD242B, B0242C FOB P O W E R -A M P L IFIE R A N D H IG H -S P EE D -S W ITC H IN G A P P L IC A TIO N S D E S IG N E D FOR C O M P L E M E N T A R Y USE W IT H BD241A-C 40 W at 25 °C Case Temperature 3 A Rated Collector Current M in f t o f 3 M H z at 10 V , 500 mA


    OCR Scan     		PDF BD242, BD242A, BD242B, BD242C BD241A-C BD242 BD242A BD242B 40PEP 80PEP transistor BD245 TIP 48 transistor TIP 32 transistor transistor TIP 32 npn transistor bd243c TIP 34 pnp BD242B TO-3P