BD 241A TRANSISTOR Search Results

BD 241A TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BD 241A TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
T0-220B Abstract: pj30 241B BD241 BD241A BD241B 241a Text: NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO CASE T0-220B THE BD 241, BD 241A AND BD -241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241, BD 241A AND BD 241B ARE COMPLEMENTARY TO	OCR Scan	PDF	U241B -241B T0-220B BD241 BD241A BD241B Tc425Â Junctio41 BD241B T0-220B pj30 241B BD241 241a
241A Abstract: 241B BD241 BD241A BD241B BD NPN transistors 312c Text: vi BD 241 • BD 241A ■ BD 241B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO ELECTRONICS CASE T0-220B THE BD 241, BD 241A AND B D '241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,	OCR Scan	PDF	T0-220B Tc425Â BD241 BD241A BD241B -3-S93363, 241A 241B BD NPN transistors 312c
Untitled Abstract: No abstract text available Text: / BD 241 • BD 2 41A ■ BD 2 41B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO CASE T0-220B THE BD 241, BD 241A AND BD<241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,	OCR Scan	PDF	T0-220B BD241 BD241A BD241B 8700E
SDT 9202 Abstract: No abstract text available Text: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A	OCR Scan	PDF	BD136 O-126 O-220 SDT 9202
Untitled Abstract: No abstract text available Text: N AflER P H IL IP S / D IS C R E T E - ^ 5 3 ^ 3 1 2SE D O D l^ S A 1 • BD 241; BD 241A B D 241B ; BD 241C T - 23-// S IL IC O N E P IT A X IA L B A S E P O W E R T R A N S IS T O R S N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier	OCR Scan	PDF	BD242; BD241 BD241; BD241A BD241B; BD241C bbS3131 bb53T31
BD24IC Abstract: B0241A BD24IB BOZ41A 80241c BD241B T0-22QAB BD242S 80241 BD241A Text: öl 3875081 G E S O LID STATE DE 1 3 Ö 7 S D Ü 1 0017S3D 01E D 17530 □ ' Pro Electron Power Transistors File Num ber 671 BD241, BD241A, BD241B, BD241C Epitaxial-Base Silicon N-P-N	OCR Scan	PDF	13A7S0Ã 0017S3D BD241, BD241A, BD241B, BD241C BD242, BD242A, BD242B, BD242C BD24IC B0241A BD24IB BOZ41A 80241c BD241B T0-22QAB BD242S 80241 BD241A
B0415 Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063 Text: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2	OCR Scan	PDF	BD239 O-220 BD240 BD239A BD240A BD239B BD240B BD240 B0415 b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063
BD242B Abstract: 241B BD242 BD242A BOX69477 BD 242 transistors Text: BD 242 • BD 242 A ■ BD 242 B PNP SILICON EPITAXIAL BASE POWER TRANSISTORS -Cf- $ # 5 “ < V?.,. 4 & - 1 zj: ' 4 ! ì sf 3 g, ’ " CASE T0-220B THE BD 242, BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED POR SWITCHING, DRIVER AND OUTPUT	OCR Scan	PDF	BD242B T0-220B BD242 BD242A bd242Ã 241B BOX69477 BD 242 transistors
D242B Abstract: 3120c BD240C BD242 BD242A BD242B T0-22OB 8700bo Text: b U Z4Z • D U ^ M " DU PÏÏP SILICON EPITAXIAL BASE POWER TRANSISTORS I ; m ic r o e l e c t r o n i c s CASE T0-22OB THE BD 24 2 , BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT SATAGES IN AUDIO AMPLIFIERS. THE BD 242,	OCR Scan	PDF	T0-22OB Tc425Â BD242 BD242A BD242B U1LTA-25Â 8700Bo O87OE D242B 3120c BD240C BD242B T0-22OB
bd 241a transistor Abstract: BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11 Text: _6 0 9 178B MICRO ELECTRONICS C O R P _ 82D 00667 D 'T niCRO ELE CT RO NI CS CORP ÛE d Ê I b D T I ? flfl □□□0t=it=i7 3 \| Of Power Iransistors P O L A R IT Y V CE SAT CASE I M A X IM U M R A T IN G S 'c (A) BD BD BD BD BD 239 239A	OCR Scan	PDF	T0-220B O-220B -220B to-02 melf-002. bd 241a transistor BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11
d880 Abstract: 2sc2335r D 1163A Text: TO-220 Power Package Transistors NPN Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Maximum Ratings Type No. ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min Pd (W) @Tc=25°c 'c (A) 'cBO ^CB 'c es ^CE (mA) Max (V) (ma) Max e (V) e h FE (A) Min	OCR Scan	PDF	O-220 2SC2335R 2SC2335Y B0239B BD241 BD241C BD243 BD243A d880 2sc2335r D 1163A
Untitled Abstract: No abstract text available Text: TO-220 Power Package Transistors NPN Maximum Ratings Type No. '^CRO ^CEO (V) Min (V) Min ^EBO Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) (V) Min Tc=25"c (A) leso (MA) ^CB (V) Max 'ces (MA) ^CE e (v) Max @ hFE ^CE (A) Min	OCR Scan	PDF	O-220
B0241C Abstract: 2SC2335R 2SD288Y 2SD8800 2SD880Y 2SD2880 BD243 250880 2SC2335Y 2SD1163 Text: TO-220 Power Package Transistors NPN Maximum Ratings Type No. 2S C 2335R 2S C 2335Y ^CBO ^CEO (V) Min (V) Min 500 500 400 400 Pd (V) (W) Min @Tc=25°C ^EBO 7 7 40 40 Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) 'c 'cBO (A) (MA) Max 7	OCR Scan	PDF	O-220 2SC2335R 2SC2335Y 2SC3039 2SD1163 2SD1163A 2SD288 2402SD8800 2SD880Y BD239 B0241C 2SD288Y 2SD8800 2SD2880 BD243 250880
45C8 Abstract: n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224 Text: Power Transistors • D EV IC E ■c Max v CEO Max PO LA RITY A V - hFE M in/M ax ff \ç v CE(sat Max Cd \q A V A »T Min pD(Max) T C =25°C MHz W PACK AGE 0.8 15 15 25 117 115 10 10 TO-66 TO-3 TO-3 TO-39 TO-39 5.0 5.0 5.0 5.0 1.0 4.0 4.0 4.0	OCR Scan	PDF	2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 45C8 n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224

PNP 2SD Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715 Text: 1 SEMICONDUCTORS INC OTE D \| fi!3bbSG 0D0DSÖ2 4 \| Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK AGE 2N 3054 2N 3055	OCR Scan	PDF	2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 PNP 2SD T1P61 BD224
2SD5703 Abstract: 2sd 209 l 2N6883 638s IC 638S T1P61 BD223 CX704 2n6125 Text: T- SEMICONDUCTORS INC OTE S \| 813tUS0 0 D M 2 6 2 4 \| S3 -fi Power Transistors •c D E V IC E M ax v CEO M ax A v hF E M in /M a x ?f l ç P O L A R IT Y v C E (sa t M ax fti Iq »T M in p D (M ax) T C =25°C W A V A M Hi PACK AGE 2N3054 2N3055 2N3055SD	OCR Scan	PDF	813tUS0 O-48D 2SD5703 2sd 209 l 2N6883 638s IC 638S T1P61 BD223 CX704 2n6125
D242A Abstract: D-242a Text: Oi 3875081 G E S O L I D “S T A T E " »Fj3fl7S0fll 0 0 1 7 S 3 3 L “ Ô ÏE 17533 Di T - * * ' / ? Pro Electron Power Transistors _ BD242, BD242A, BD242B, BD242C File N um ber 672	OCR Scan	PDF	BD242, BD242A, BD242B, BD242C BD241B, BD241C BD242C D242A D-242a
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan	PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	PDF	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
TRANSISTOR tip122 CHN 949 Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175 Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.	OCR Scan	PDF	38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
UAA2001 Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402 Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re	OCR Scan	PDF	0HF40 0HF60 0HF80 6FP10 6F100 70HF10 UAA2001 MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
triac zd 607 Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published	OCR Scan	PDF	thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
tic 1260 scr texas Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228 Text: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.	OCR Scan	PDF
2n3773 power Amplifier circuit diagrams Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U Text: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete	OCR Scan	PDF	AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U

BD 241A TRANSISTOR Search Results

BD 241A TRANSISTOR Result Highlights (5)

BD 241A TRANSISTOR Datasheets Context Search

T0-220B

241A

Untitled

SDT 9202

Untitled

BD24IC

B0415

BD242B

D242B

bd 241a transistor

d880

Untitled

B0241C

45C8

PNP 2SD

2SD5703

D242A

Transistor 2SA 2SB 2SC 2SD

ksd 302 250v, 10a

TRANSISTOR tip122 CHN 949

UAA2001

triac zd 607

tic 1260 scr texas

2n3773 power Amplifier circuit diagrams