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    onsemi BD139G

    TRANS NPN 80V 1.5A TO-126
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    DigiKey BD139G Bulk 12,045 1
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    New Advantage Corporation BD139G 967 1
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    onsemi BD13916STU

    TRANS NPN 80V 1.5A TO-126-3
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    DigiKey BD13916STU Tube 8,924 1
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    Avnet Americas BD13916STU Bulk 16 Weeks, 4 Days 1
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    Rochester Electronics BD13916STU 96,668 1
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    STMicroelectronics BD139-10

    TRANS NPN 80V 1.5A SOT-32
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    DigiKey BD139-10 Tube 5,790 1
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    STMicroelectronics BD139-10 6,472 1
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    STMicroelectronics BD139

    TRANS NPN 80V 1.5A SOT-32-3
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    DigiKey BD139 Tube 5,417 1
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    STMicroelectronics BD139 7,440 1
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    onsemi BD13910STU

    TRANS NPN 80V 1.5A TO-126-3
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    DigiKey BD13910STU Tube 1,403 1
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    BD 139 Datasheets (121)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD139 Central Semiconductor Leaded Power Transistor General Purpose Original PDF
    BD139 Fairchild Semiconductor NPN Epitaxial Silicon Transistor - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original PDF
    BD139 Motorola Plastic Medium Power Silicon NPN Transistor - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original PDF
    BD139 On Semiconductor Plastic Medium Power Silicon NPN Transistor Original PDF
    BD139 Philips Semiconductors NPN POWER TRANSISTORS - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original PDF
    BD139 Philips Semiconductors NPN power transistors - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original PDF
    BD139 Philips Semiconductors NPN GENERAL PURPOSE POWER TRANSISTORS Original PDF
    BD139 Philips Semiconductors Silicon Planar Epitaxial Power Transistors Original PDF
    BD139 Siemens Cross Reference Guide 1998 Original PDF
    BD139 STMicroelectronics Complementary low voltage transistor Original PDF
    BD139 STMicroelectronics NPN SILICON TRANSISTORS - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original PDF
    BD139 Various Russian Datasheets Transistor Original PDF
    BD139 Continental Device India NPN Plastic Power Transistor Scan PDF
    BD139 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BD139 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    BD139 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
    BD139 Motorola Motorola Transistor Datasheets Scan PDF
    BD139 Motorola The European Selection Data Book 1976 Scan PDF
    BD139 Motorola European Master Selection Guide 1986 Scan PDF
    BD139 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    ...

    BD 139 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    alc860

    Abstract: ALC860 schematics rqa200n03 rqa130n03 hy5ps561621afp-25 OZ128TN AF-15 P71EN0 OZ813 rtl8111b
    Text: 5 4 3 2 1 S50IAx REV:D P/N LIST S50IAx Schematics Rev:D PAGE PCB P/N CONTENT PCB ASSY P/N S40II M/B 37GS50000-D0 S40/S50 TOUCH PAD BD S50IA M/B HYNIX 37GS50000-D0 82GS50000-D0 43. S40 MODEM BD S50IA M/B(SAM) 37GS50000-D0 82GS50000-? 44. S50 MODEM WITH USB BD


    Original
    S50IAx S40/S50 S40II S50IA ICS9LPR310-CLK PCIEx16* page05 alc860 ALC860 schematics rqa200n03 rqa130n03 hy5ps561621afp-25 OZ128TN AF-15 P71EN0 OZ813 rtl8111b PDF

    pin configuration transistor bd140

    Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139


    Original
    BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 PDF

    FPT-48P-M19

    Abstract: FPT-48P-M20 12PW 38
    Text: MBM29SL800TD/BD-10/12 Data Sheet Retired Product MBM29SL800TD/BD -10/12 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications


    Original
    MBM29SL800TD/BD-10/12 MBM29SL800TD/BD DS05-20871-6E F0210 ProductDS05-20871-6E FPT-48P-M19 FPT-48P-M20 12PW 38 PDF

    FPT-48P-M19

    Abstract: FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball


    Original
    DS05-20871-5E MBM29SL800TD/BD-10/12 MBM29SL800TD/BD 48-pin 48-ball 48-ball MBM29SL800TD/MBM29SL800BD F0210 FPT-48P-M19 FPT-48P-M20 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball


    Original
    DS05-20871-4E MBM29SL800TD/BD-10/12 MBM29SL800TD/BD 48-pin 48-ball 48-ball MBM29SL800TD/MBM29SL800BD PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball


    Original
    DS05-20871-5E MBM29SL800TD/BD-10/12 MBM29SL800TD/BD 48-pin 48-ball PDF

    NT5TU32M16DG

    Abstract: Nanya NT5TU32M16DG NT5T NT5TU32M16CG-25C NT5TU32M16CG-3CI NT5TU32M16CG NT5TU32M16CG-25DI nt5tu64m8 B.a Date sheet 2007 DDR2-667
    Text: NT5TU128M4CE / NT5TU64M8CE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -25D/-25DI -25C/-25CI -BD -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6 5-5-5 7-7-7 6-6-6 tCK Avg. 266 333 400 400


    Original
    NT5TU128M4CE NT5TU64M8CE NT5TU32M16DG 512Mb -37B/-37BI -25D/-25DI -25C/-25CI DDR2-533 DDR2-667 DDR2-800 NT5TU32M16DG Nanya NT5TU32M16DG NT5T NT5TU32M16CG-25C NT5TU32M16CG-3CI NT5TU32M16CG NT5TU32M16CG-25DI nt5tu64m8 B.a Date sheet 2007 DDR2-667 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1453-2012.qxp:QuarkCatalogTempNew 9/7/12 10:32 AM Page 1453 15 Wireless Bluetooth, Wireless Ethernet and Radio-Ready Enclosures TEST & MEASUREMENT 900 MHz Trusted Wireless Ethernet Radio INTERCONNECT 2900016 RAD-ISM-900-EN-BD-BUS The RAD-ISM-900-EN-BD industrial radio transceiver brings Ethernet or serial data from remote locations to IP based networks. It is suitable for SCADA applications and the highly reliable and secure transmissions make it ideal for integrating


    Original
    RAD-ISM-900-EN-BD-BUS RAD-ISM-900-EN-BD PDF

    DM6030HK

    Abstract: TS3332LD XB1004 XP1022-BD XU1002 TRANSISTOR 9642
    Text: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point


    Original
    P1022-BD 05-Feb-07 MIL-STD-883 XP1022-BD-000V XP1022-BD-EV1 XP1022-BD DM6030HK TS3332LD XB1004 XU1002 TRANSISTOR 9642 PDF

    Untitled

    Abstract: No abstract text available
    Text: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point


    Original
    05-Feb-07 P1022-BD MIL-STD-883 XP1022-BD-000V XP1022-BD-EV1 XP1022-BD PDF

    Untitled

    Abstract: No abstract text available
    Text: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD December 2009 - Rev 01-Dec-09 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3


    Original
    P1017-BD 01-Dec-09 MIL-STD-883 P1017-BD-EV1 XP1017-BD PDF

    BUX 127

    Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
    Text: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B


    OCR Scan
    BD244B BD379 BD380 BD434 BD435 BD440 BD681 BD682 BD712 BD905 BUX 127 bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140 PDF

    SDT 9202

    Abstract: No abstract text available
    Text: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A


    OCR Scan
    BD136 O-126 O-220 SDT 9202 PDF

    8D139

    Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135
    Text: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126


    OCR Scan
    fl23SbQS 135/BD 137/BD BD135, B0137, B0139 BD137, BD139 BD136. 8D139 bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135 PDF

    transistor BD 378

    Abstract: BD140 pnp transistor BD136 transistors bd136 bd136 N bd140
    Text: BD136 BD138 BD140 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose p-n-p transistors in SOT-32 plastic package, recom m ended fo r d river stages in h i-fi am p lifiers and television circuits. The BD 135, BD 137 and BD 139 are co m p le m e n tary to the B D 136, BD 138 and B D 140 respectively.


    OCR Scan
    BD136 BD138 BD140 OT-32 BD140 transistor BD 378 BD140 pnp transistor transistors bd136 bd136 N PDF

    transistor bd 126

    Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
    Text: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe*^ T -^ -O S * Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available


    OCR Scan
    DIN41869 DIN125A 15A3DIN transistor bd 126 TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711 PDF

    BD139 N

    Abstract: BD 139 BD139 NPN BD140 BD135 BD136
    Text: S C S -T H O M S O N M im [iEgTO *S BD135 BD137/BD139 NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD 135, BD 137 and BD 139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers


    OCR Scan
    BD135 BD137/BD139 OT-32 BD136 BD138 BD140. BD135 BD137 BD139 BD139 N BD 139 BD139 NPN BD140 PDF

    tfk 138

    Abstract: tfk 136 tfk 140 BD 140 tfk 135 3 TFK 140 BD 139 140 72050 tfk bd 138 BD136
    Text: BD 136 • BD 138 • BD 140 Silicon PNP Epitaxial Planar Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Besondere Merkmale: • Verlustleistung 8 W Features: • Power dissipation 8 W


    OCR Scan
    PDF

    tfk 135

    Abstract: bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135
    Text: V BD 135 • BD 137 • B D 139 Silicon NPN Epitaxial Planar Power Transistors Anw endungen: Allgemein Im NF-Bereich Applications: General in AF-range Features: Besondere Merkmale: • Verlustleistung 8 W


    OCR Scan
    erlegscheibe32D N125A tfk 135 bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135 PDF

    TRANSISTOR BC 136

    Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
    Text: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available


    OCR Scan
    T-33-17 DIN125A 15A3DIN TRANSISTOR BC 136 transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711 PDF

    BD 139 N

    Abstract: TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436
    Text: Inventory o f discrete standard Types 9.1. Transistors Type P = PNP (N = NPN) Collector base reverse voltage V'oso ; v (V ces); BD 136 BD 137 Current gainbandw idth product / c; A fT; MHz P -45 -1 .5 50 N 60 -6 0 80 1.5 -1 .5 1.5 -80 45 -1 .5 2 50 50 >50


    OCR Scan
    OT-32 BD 139 N TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436 PDF

    Untitled

    Abstract: No abstract text available
    Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 Rating Unit 45 V : BD137


    OCR Scan
    BD135/137/139 BD136, BD140 BD135 BD137 BD139 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD137 60 V : BD139 80 V 45 V : BD137 60 V : BD139 80


    OCR Scan
    KSD135/137/139 BD140 BD137 BD139 BD135 BD137, PDF

    BD139

    Abstract: b*137 bd139 Complement power transistor bd137 power transistor bd139 transistor bd137 BD137 bd137 Transistor BD135 BD136
    Text: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 VcBO : BD137 : BD139 C ollector E m itter Voltage : BD135


    OCR Scan
    KSD135/137/139 BD136 BD140 BD135 BD137 BD139 O-126 BD139 b*137 bd139 Complement power transistor bd137 power transistor bd139 transistor bd137 BD137 bd137 Transistor PDF