BD 135 TRANSISTOR Search Results

BD 135 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

BD 135 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
8D139 Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135 Text: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126	OCR Scan	fl23SbQS 135/BD 137/BD BD135, B0137, B0139 BD137, BD139 BD136. 8D139 bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135	PDF
BD 139 N Abstract: transistor BD 141 bd139 Text: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to	OCR Scan	023Sfc 0QQ4332 Q62702-D106 Q62702-D106-V1 Q62702-D106-V2 Q62702-D106-V3 Q621758 fl23Sb05 Q00M33b BD 139 N transistor BD 141 bd139	PDF
SDT 9202 Abstract: No abstract text available Text: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A	OCR Scan	BD136 O-126 O-220 SDT 9202	PDF
transistor bd 126 Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711 Text: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe^ T -^ -O S Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available	OCR Scan	DIN41869 DIN125A 15A3DIN transistor bd 126 TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711	PDF
BD139 N Abstract: BD 139 BD139 NPN BD140 BD135 BD136 Text: S C S -T H O M S O N M im [iEgTO *S BD135 BD137/BD139 NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD 135, BD 137 and BD 139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers	OCR Scan	BD135 BD137/BD139 OT-32 BD136 BD138 BD140. BD135 BD137 BD139 BD139 N BD 139 BD139 NPN BD140	PDF
tfk 135 Abstract: bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135 Text: V BD 135 • BD 137 • B D 139 Silicon NPN Epitaxial Planar Power Transistors Anw endungen: Allgemein Im NF-Bereich Applications: General in AF-range Features: Besondere Merkmale: • Verlustleistung 8 W	OCR Scan	erlegscheibe32D N125A tfk 135 bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135	PDF
transistor BD 378 Abstract: BD140 pnp transistor BD136 transistors bd136 bd136 N bd140 Text: BD136 BD138 BD140 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose p-n-p transistors in SOT-32 plastic package, recom m ended fo r d river stages in h i-fi am p lifiers and television circuits. The BD 135, BD 137 and BD 139 are co m p le m e n tary to the B D 136, BD 138 and B D 140 respectively.	OCR Scan	BD136 BD138 BD140 OT-32 BD140 transistor BD 378 BD140 pnp transistor transistors bd136 bd136 N	PDF
pin configuration transistor bd140 Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139	Original	BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136	PDF
bd 135 Abstract: Scans-007431 bo 135 h21e bd 135 h21e bd 138 Text: BD 135 BD137 NPN S IL IC O N TR A N S IS TO R S , P LA N A R TRANSISTORS NPN SILIC IU M , PLAN A R Com pì, of BD 136, BD 138 P R E L IM IN A R Y D A T A N O T IC E PR E L I M IN A IR E These transistors are intended fo r a wide variety o f medium power complementary symetry appli	OCR Scan	135/BD 137/BD 300fis bd 135 Scans-007431 bo 135 h21e bd 135 h21e bd 138	PDF
transistor bd 126 Abstract: bd 136 BD 138 bo 135 hi-fi bd bf AMPLIFICATEUR BD136 Text: B D 136 B D 138 PNP SILICON TRANSISTORS, PLANAR T R A N S IS T O R S P N P S IL IC IU M , P L A N A R Compì, of BD 135, 6D 137 PRELIM INARY DATA N O T IC E P R E L I M IN A I R E These transistors are intended for a wide variety of medium power complementary symetry appli	OCR Scan	135/BD 137/BD deh31E 136ouBD 300/is transistor bd 126 bd 136 BD 138 bo 135 hi-fi bd bf AMPLIFICATEUR BD136	PDF
transistor BD 139 Abstract: transistor BD 137 BD 139 transistor 10 watt power transistor bd transistor BD 135 bd139 BD transistor BD 139 BD 135 BD135 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio am plifiers and drivers utilizing complementary o r quasi com plementary circuits. • • DC Current Gain — hpE = 40 Min @ l c = 0.15 Adc	OCR Scan	BD135 BD137 BD139 transistor BD 139 transistor BD 137 BD 139 transistor 10 watt power transistor bd transistor BD 135 bd139 BD transistor BD 139 BD 135	PDF
BDI35 Abstract: BDI37 LB 137 transistor transistor BD 139 transistor BD139 N BD 139 N Transistor Bd 140 bd 135 BD 139 transistor BD139 Text: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • • DC Current Gain — hpE = 40 Min @ Iq = 0.15 Adc	OCR Scan	BD135/D BD135 BD137 BD139 O-225AA BDI35 BDI37 LB 137 transistor transistor BD 139 transistor BD139 N BD 139 N Transistor Bd 140 bd 135 BD 139 transistor BD139	PDF
BD139 MOTOROLA Abstract: BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135 Text: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc	Original	BD135/D* BD135/D BD139 MOTOROLA BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135	PDF
tfk 138 Abstract: tfk 136 tfk 140 BD 140 tfk 135 3 TFK 140 BD 139 140 72050 tfk bd 138 BD136 Text: BD 136 • BD 138 • BD 140 Silicon PNP Epitaxial Planar Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Besondere Merkmale: • Verlustleistung 8 W Features: • Power dissipation 8 W	OCR Scan		PDF

bo 139 Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140 Text: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T \| XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing	OCR Scan	L3b72S4 0GflM703 BD135 BD137 BD139 225AA bo 139 bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140	PDF
TRANSISTOR BD 136 Abstract: BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140 Text: ON Semiconductort BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS	Original	BD135/D r14525 TRANSISTOR BD 136 BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140	PDF
Bow94c Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80	OCR Scan	BDX53 Bow94c MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a	PDF
BD140 application circuits circuits Abstract: transistor bd136 transistor BD140 BD140 BD140-10 bd140 pin out transistor BD 140 BD136 MOTOROLA TRANSISTOR BD138 Text: MOTOROLA Order this document by BD136/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc	Original	BD136/D* BD136/D BD140 application circuits circuits transistor bd136 transistor BD140 BD140 BD140-10 bd140 pin out transistor BD 140 BD136 MOTOROLA TRANSISTOR BD138	PDF
ba 1 Abstract: PTC thermistor 4.7k Transistors bc 558 ptc Ba Text: THERMISTOR PRODUCTS PTC THERMISTOR CHIP TYPE FOR TEMPERATURE SENSING PTH9C Series The PTH9C Series is used for temperature sensing. Typical applications include overheat protection of power transistors, power diodes and power IC’s. FEATURES • Steep resistance characteristics near the	Original	PTH9C32 PTH9C32BB471Q-T PTH9C32BC471Q-T PTH9C32BD471Q-T PTH9C32BE471Q-T PTH9C16T CG01-I ba 1 PTC thermistor 4.7k Transistors bc 558 ptc Ba	PDF
bc 540 Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0	OCR Scan	BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N	PDF
BD139 PIN DIAGRAM Abstract: BD135 PIN DIAGRAM to225aa BD137G BD139 BD139G pin diagram of bd139 bd139 140 TRANSISTOR bd 330 BD137 Text: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available	Original	BD135, BD137, BD139 BD135 BD137 BD139 PIN DIAGRAM BD135 PIN DIAGRAM to225aa BD137G BD139 BD139G pin diagram of bd139 bd139 140 TRANSISTOR bd 330 BD137	PDF
10 watt power transistor bd Abstract: transistor BD 140 transistor BD 136 bd140 transistor bd 138 BD 140 transistor transistor BD 139 bd 140 transistor BD 135 motorola Bd140 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD136 BD138 BD140 BD140-10 P lastic Medium Power Silicon PNP Transistor . . . designed for use as audio am plifiers and drivers utilizing complementary or quasi complementary circuits. • • DC Current Gain — hpg = 40 Min @ l c = 0.15 Adc	OCR Scan	BD136 BD138 BD140 BD140-10 10 watt power transistor bd transistor BD 140 transistor BD 136 transistor bd 138 BD 140 transistor transistor BD 139 bd 140 transistor BD 135 motorola Bd140	PDF
pth9c32ar471q-t Abstract: PTC thermistor 4.7k PTH9C32 PTH9C PTH9C32BB471Q-T ptc Ni 1000 ptc Ba PTH9C32BB471Q PTH9C32BD471Q-T bc 471 Text: THERMISTOR PRODUCTS PTC THERMISTOR CHIP TYPE FOR TEMPERATURE SENSING PTH9C Series The PTH9C Series is used for temperature sensing. Typical applications include overheat protection of power transistors, power diodes and power IC’s. FEATURES • Steep resistance characteristics near the	Original	PTH9C16 PTH9C32 PTH9C32BB471Q-T PTH9C32BC471Q-T PTH9C32BD471Q-T PTH9C32BE471Q-T CG01-J pth9c32ar471q-t PTC thermistor 4.7k PTH9C32 PTH9C ptc Ni 1000 ptc Ba PTH9C32BB471Q bc 471	PDF
transistor BD 141 Abstract: BD139G bd139 140 BD139-25 BD139 NPN transistor Bd139 operation of BD 139 bd135 diagram Text: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features	Original	BD135, BD137, BD139 BD139 BD135 BD137 transistor BD 141 BD139G bd139 140 BD139-25 BD139 NPN transistor operation of BD 139 bd135 diagram	PDF

BD 135 TRANSISTOR Search Results

BD 135 TRANSISTOR Result Highlights (5)

BD 135 TRANSISTOR Datasheets Context Search

8D139

BD 139 N

SDT 9202

transistor bd 126

BD139 N

tfk 135

transistor BD 378

pin configuration transistor bd140

bd 135

transistor bd 126

transistor BD 139

BDI35

BD139 MOTOROLA

tfk 138

bo 139

TRANSISTOR BD 136

Bow94c

BD140 application circuits circuits

ba 1

bc 540

BD139 PIN DIAGRAM

10 watt power transistor bd

pth9c32ar471q-t

transistor BD 141