BCY72
Abstract: BCY70 equivalent BCY70 BCY71 semelab bcy71 transistor bcy70
Text: BCY70 BCY71 BCY72 GENERAL PURPOSE PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. DESCRIPTION The BCY70, BCY71 & BCY72 are silicon
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BCY70
BCY71
BCY72
BCY70,
BCY72
O-206AA)
BCY70 equivalent
BCY70
BCY71
semelab bcy71
transistor bcy70
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BCY71
Abstract: BCY70 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D361 BCY70; BCY71 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 11 Philips Semiconductors Product specification PNP general purpose transistors
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M3D361
BCY70;
BCY71
MAM263
SCA55
117047/00/02/pp8
BCY71
BCY70
BP317
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BCY70
Abstract: BCY71 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D361 BCY70; BCY71 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 11 Philips Semiconductors Product specification PNP general purpose transistors
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M3D361
BCY70;
BCY71
MAM263
SCA55
117047/00/02/ppp8
BCY70
BCY71
BP317
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BCY70 pin out
Abstract: BCY72 BCY70 BCY71
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BCY70 , 71, 72 TO-18 Metal Can Package General Purpose Industrial Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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BCY70
C-120
72Rev220901
BCY70 pin out
BCY72
BCY70
BCY71
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BCY71 pin out
Abstract: BCY70 pin out BCY70 BCY72 BCY71
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BCY70 , 71, 72 TO-18 Metal Can Package General Purpose Industrial Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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BCY70
C-120
72Rev220901
BCY71 pin out
BCY70 pin out
BCY70
BCY72
BCY71
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BCY71 pin out
Abstract: BCY70 pin out
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BCY70 , 71, 72 TO-18 Metal Can Package General Purpose Industrial Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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BCY70
C-120
72Rev220901
BCY71 pin out
BCY70 pin out
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Low Voltage Output Amplifier Surface Mount MSD1328-RT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 25 Vdc Collector–Emitter Voltage
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MSD1328-RT1
Colle218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
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transistor 2N3906 smd 2A SOT23
Abstract: BC327-40 SMD pin configuration transistor BC547 smd packaging DIAC DB2 BC547 smd packaging bd469 W04M pin configuration A1941 C5198 application notes D1 DB2 Diac w33 SMD sot 23
Text: Contents Chips/Dice Package Outline Drawings Page # Axial Glass/Plastic Packages Package Outline Drawings Page # … Leaded Plastic Packages Chips/Dice for Diodes 2 DO-35 50 KBPC 60 Chips/Dice for Transistors 2 DO-41 50 KBPC-6 60 Products for CFL/TL Ballasts
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DO-35
DO-41
DO-15
DO-201AD
DO-41P
200mW
OD-80C
LL-34
transistor 2N3906 smd 2A SOT23
BC327-40 SMD
pin configuration transistor BC547 smd packaging
DIAC DB2
BC547 smd packaging
bd469
W04M pin configuration
A1941 C5198 application notes
D1 DB2 Diac
w33 SMD sot 23
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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MV104 "direct replacement"
Abstract: 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning.
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MV104)
MV104
226AA)
Curren218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV104 "direct replacement"
2N3819 Application Note
BF245 application note
K 2056 transistor
MV104 equivalent
BC237
BSS89 APPLICATION
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transistor equivalent CT 2n5551
Abstract: EQUIVALENT TRANSISTOR bc109c BC237 BC238 h parameter 1N5148
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5148 1N5148A Designed for electronic tuning and harmonic–generation applications, and provide solid–state reliability to replace mechanical tuning methods. • Guaranteed High–Frequency Q
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1N5148
1N5148A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
transistor equivalent CT 2n5551
EQUIVALENT TRANSISTOR bc109c
BC237
BC238 h parameter
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BCY71
Abstract: bcy70 BCY70 philips
Text: DISCRETE SEMICONDUCTORS OÂTÂ SlnlEET BCY70; BCY71 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips S e m ico n d u cto rs 1997 Jul 11 PHILIPS Philips Sem iconductors
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OCR Scan
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BCY70;
BCY71
BCY71
BCY70
BCY70 philips
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BC253C
Abstract: BC253B 305900 BC251B 2N3963 BC213L BC214 BC214KC BC251A BC252A
Text: ITT Semiconductors PNP Transistors P N P Sm all Sign a l Silico n Transistors Epoxy Package TO-92 and Metal Can (TO-18). For general purpose applications. Range complementary to BC107/BC171 series. O u tlin e D ra w in g M o . 73 ap p lie s fo r T O -92 types.
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BC107/8C171
300mW
BC251A
31230C
BC251B
1231A
BC252A
31232X
BC252B
31233H
BC253C
BC253B
305900
2N3963
BC213L
BC214
BC214KC
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dlatgs
Abstract: philips pyroelectric infrared sensor P5200 pyroelectric tgs pyroelectric infrared sensor DLaTGS sensor IEC 68-2-27 spectrometer RPY105P "Pyroelectric Infrared Sensor" philips jfet
Text: Philips Components RPY105P/ P5200 DEVELOPMENT DATA This data sheet contains advance information and specifications which are subject to change without notice, DEUTERATED LATGS PYROELECTRIC INFRARED SENSOR FITTED WITH HIGH-DENSITY POLYETHYLENE WINDOW Window:
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RPY105P/
P5200
M89-1074/RC
dlatgs
philips pyroelectric infrared sensor
P5200
pyroelectric tgs
pyroelectric infrared sensor
DLaTGS sensor
IEC 68-2-27 spectrometer
RPY105P
"Pyroelectric Infrared Sensor"
philips jfet
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NPN pnp MATCHED PAIRS 2n2905A 2N2219A
Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Text: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW
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BS9365
2N4036
2N4037
BS3365
2N4030
2N4031
NPN pnp MATCHED PAIRS 2n2905A 2N2219A
BFR39
BFR80
BFR40
BS9300
BFR81
BC326
BFR79
TIS90
BFR62
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BSX19 equivalent
Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small
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OT-23
BSX19 equivalent
BC350
bc107
BFW63
bcw17
SHORT DATA ON 2N744
transistor BC287
2N3020
BC451
2N2868
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