BCY72
Abstract: BCY70 equivalent BCY70 BCY71 semelab bcy71 transistor bcy70
Text: BCY70 BCY71 BCY72 GENERAL PURPOSE PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. DESCRIPTION The BCY70, BCY71 & BCY72 are silicon
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BCY70
BCY71
BCY72
BCY70,
BCY72
O-206AA)
BCY70 equivalent
BCY70
BCY71
semelab bcy71
transistor bcy70
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BCY71 pin out
Abstract: BCY70 pin out BCY70 BCY72 BCY71
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BCY70 , 71, 72 TO-18 Metal Can Package General Purpose Industrial Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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BCY70
C-120
72Rev220901
BCY71 pin out
BCY70 pin out
BCY70
BCY72
BCY71
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BCY71
Abstract: BCY70 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D361 BCY70; BCY71 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 11 Philips Semiconductors Product specification PNP general purpose transistors
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M3D361
BCY70;
BCY71
MAM263
SCA55
117047/00/02/pp8
BCY71
BCY70
BP317
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BCY70 pin out
Abstract: BCY72 BCY70 BCY71
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BCY70 , 71, 72 TO-18 Metal Can Package General Purpose Industrial Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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BCY70
C-120
72Rev220901
BCY70 pin out
BCY72
BCY70
BCY71
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BCY71 pin out
Abstract: BCY70 pin out
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BCY70 , 71, 72 TO-18 Metal Can Package General Purpose Industrial Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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BCY70
C-120
72Rev220901
BCY71 pin out
BCY70 pin out
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BCY70
Abstract: BCY71 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D361 BCY70; BCY71 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 11 Philips Semiconductors Product specification PNP general purpose transistors
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M3D361
BCY70;
BCY71
MAM263
SCA55
117047/00/02/ppp8
BCY70
BCY71
BP317
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Low Voltage Output Amplifier Surface Mount MSD1328-RT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 25 Vdc Collector–Emitter Voltage
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MSD1328-RT1
Colle218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
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transistor 2N3906 smd 2A SOT23
Abstract: BC327-40 SMD pin configuration transistor BC547 smd packaging DIAC DB2 BC547 smd packaging bd469 W04M pin configuration A1941 C5198 application notes D1 DB2 Diac w33 SMD sot 23
Text: Contents Chips/Dice Package Outline Drawings Page # Axial Glass/Plastic Packages Package Outline Drawings Page # … Leaded Plastic Packages Chips/Dice for Diodes 2 DO-35 50 KBPC 60 Chips/Dice for Transistors 2 DO-41 50 KBPC-6 60 Products for CFL/TL Ballasts
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DO-35
DO-41
DO-15
DO-201AD
DO-41P
200mW
OD-80C
LL-34
transistor 2N3906 smd 2A SOT23
BC327-40 SMD
pin configuration transistor BC547 smd packaging
DIAC DB2
BC547 smd packaging
bd469
W04M pin configuration
A1941 C5198 application notes
D1 DB2 Diac
w33 SMD sot 23
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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MSC2404
Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
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MSA1022-CT1
Emitte218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MPF3821
BC237
MPS8093
BCY72
MMBF4856
MAD130P
MPS3866
bcy71 ALTERNATIVE
BSS72
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BF245
Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30
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MSC2295-BT1
MSC2295-CT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BF245
BC237
mps8093
bf244
MSA1022
msc2295
MAD1107P
MPS6568
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stencil
Abstract: BC237 automatic heat detector project report BC393 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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BAT54T1
Ju218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
stencil
BC237
automatic heat detector project report
BC393 equivalent
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BCY71
Abstract: bcy70 BCY70 philips
Text: DISCRETE SEMICONDUCTORS OÂTÂ SlnlEET BCY70; BCY71 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips S e m ico n d u cto rs 1997 Jul 11 PHILIPS Philips Sem iconductors
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OCR Scan
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PDF
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BCY70;
BCY71
BCY71
BCY70
BCY70 philips
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BCY70 motorola
Abstract: No abstract text available
Text: MOTOROLA Order this document by BCY70/D SEMICONDUCTOR TECHNICAL DATA Tran sistors BCY70 PNP Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO -4 5 Vdc Collector-Base Voltage v CBO -5 0 Vdc Vdc Emitter-Base Voltage
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OCR Scan
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PDF
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BCY70/D
BCY70
1-80CM41-2447
BCY70 motorola
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bc657
Abstract: BC566 BC659 BC159 BC463 BCX36 BCY34A BC167 BC462 transistor bc668
Text: Transistors P-N-P silicon lo w /m ed iu m pow er transistors book 1 parts 1 and 2 Type No. 1 3 o e ! VcBO V ce.0 V (V) M axim um Ratings ' cm Ic <AV) (m AJ Tj P«ot (m A) a t 2 5 °C <°C) (mW) 200 200 50 200 3 60 100 125 3 50 h FE m in. m ax. at le (m A)
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BCY70
BCY71
BCY71)
BCY72
BFX37
BC167
OT-25
KBC158
BC159
15kHz
bc657
BC566
BC659
BC159
BC463
BCX36
BCY34A
BC462 transistor
bc668
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smd npn 2n2222
Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.
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OCR Scan
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PDF
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2PC1815L
2PC1815
10xx0.
7Z88986
smd npn 2n2222
bf471
BSR62 equivalent
EQUIVALENT TRANSISTOR bc549c
transistor bf 175
transistor bc547 PH in metal detector
tunnel diode
BSY95A
BF470
BC200
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