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    BCX58 TRANSISTORS Search Results

    BCX58 TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BCX58 TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BCX598

    Abstract: No abstract text available
    Text: BCX58 BCX59 N-P-N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 package. P N -P complementary types are BCX78 and BCX79. Q U IC K R E F E R E N C E D A T A BCX58 Collector-emitter voltage open base V CE 0


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    BCX58 BCX59 BCX78 BCX79. BCX59 BCX598 PDF

    Untitled

    Abstract: No abstract text available
    Text: N A HER PHILIPS/DISCRETE b lE bbS3131 0027bl7 TM1 BUX/b BCX79 I> l P-N-P SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in a plastic TO-92 envelope. N-P-N complementary types are BCX58 and BCX59. QUICK REFERENCE DATA BCX78


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    bbS3131 0027bl7 BCX79 BCX58 BCX59. BCX78 PDF

    BCX59

    Abstract: LODA transistor bc 207 npn BCX58 BCX59VII C620 C623 C624 Q62702
    Text: BCX58, BCX59 NPN Transistors for AF, pre- and driver stages as w ell as switching applications BCX 58 and BCX 59 are epitaxial NPN silicon planar transistors in a plastic package strip-line design 10 A 3 DIN 41868 (sim. SOT-30). The transistors are designed for


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    BCX59 OT-30) Q62702- Q62702 BCX59 LODA transistor bc 207 npn BCX58 BCX59VII C620 C623 C624 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCX78 BCX79 P-N-P SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in a plastic TO-92 package. N-P-N complementary types are BCX58 and BCX59. Q UICK REFERENCE D A T A BCX79 BCX78 Collector-emitter voltage open base “ v CEO


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    BCX78 BCX79 BCX58 BCX59. BCX79 PDF

    BCX58

    Abstract: No abstract text available
    Text: 1 • N AMER PHILIPS/DISCRETE bTE D m bbS3T31 D0H7bm 333 I IAPX BCX58 BCX59 N-P-N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope. P-N-P complementary types are BCX78 and BCX79. QUICK REFERENCE DATA


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    bbS3T31 BCX58 BCX59 BCX78 BCX79. BCX58 PDF

    BF199

    Abstract: No abstract text available
    Text: IL TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BCX58-9 Electrical Chatacteristics (Ta=25”C, Unless Otherwise Specified) V C BO ^CEO ^EBO (V) Min (V) Min (V) Min Pd k (W) (A) @Tc=25°( 32 32 7 0.625 0.1 *CBO ^CB ^CES ^C E (PA) 8(V) (|iA) @ (V)


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    BCX58-9 O-92-4 BCX58-10 BF199 PDF

    BCX58

    Abstract: BCX59 BCX78 BCX79 bcx58 transistors
    Text: BCX58 BCX59 PHILIPS INTERNATIONAL SbE D Bi 711002b 0042000 SbT « P H I N T -2-7-0^ N-P-N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope. P-N-P complementary types are BCX78 and BCX79. QUICK REFERENCE DATA


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    BCX58 BCX59 T-27-Ã BCX78 BCX79. BCX58 MSB012 BCX59 BCX79 bcx58 transistors PDF

    BCX58

    Abstract: BCX59 BCX78 BCX79
    Text: N AMER PHILIPS/DISCRETE bSE S • ^53^31 0 0 E 7 b m 232 I IAPX BCX58 BCX59 N-P-N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope. P-N-P complementary types are BCX78 and BCX79. QUICK REFERENCE D A T A


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    00E7bm BCX58 BCX59 BCX78 BCX79. BCX58 0D27blb BCX59 BCX79 PDF

    TRANSISTOR BF495

    Abstract: BF241 TRANSISTOR transistor BF494 BF196 BF199 transistor Bf196 BCX58-9 BCX59-10 BCX59-8 BCX59-9
    Text: IL TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BCX58-9 Electrical Chatacteristics (Ta=25”C, Unless Otherwise Specified) V C B0 ^CEO ^EBO (V) Min (V) Min (V) Min Pd k (W) (A) @Tc=25°( 32 32 7 0.625 0.1 *CBO ^CB ^CES ^CE (PA) 8(V ) (|iA) @ (V)


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    BCX58-9 O-92-4 BCX58-10 TRANSISTOR BF495 BF241 TRANSISTOR transistor BF494 BF196 BF199 transistor Bf196 BCX59-10 BCX59-8 BCX59-9 PDF

    BF198

    Abstract: BF238 BF224 BF194 bf195
    Text: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25'C. Unless Otherwise Specified) Maximum Ratings Type No. BCX58-7 V CBO ^CEO ^ EBO (V) Mm (V) Min (V) Min 32 32 7 I.Po (W) (A) @Tc=25‘’c 0.45 'cB O ^C B (|JA) @{V) Max BCX5B-9 32 32


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    O-92-4 BCX58-7 BCX58-8 O-92-2 BF195 BF196 BF197 BF198 BF238 BF224 BF194 bf195 PDF

    Untitled

    Abstract: No abstract text available
    Text: NATL SEMICOND DISCRETE bflE D • bS01130 003^521 fiT3 » N S C S VcEQ(HSt) (Volts) Min 32 Devices Min BCW33 100 BCX58 100 NPN PMP BCX78 30 2N2222 mA NF (dB) Max Package I’ d (Amb) (mW) @25°C Max mA (MHz) Min 420 800 2.0 300 Typ 10 3.0 TO-236* 350 120


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    BCW33 BCX58 BCX78 bS01130 2N6726 O-236* T0-92 2N2222 2N3300 2N3302 PDF

    BCX78

    Abstract: BCX79 BCX58 BCX59
    Text: BCX78 BCX79 J . PHILIPS i n t e r n a t i o n a l SbE ]> 711Gö2b 0042004 10S M P H I N P-N-P SILICO N PLANAR EPITAXIAL T R A N S IS T O R S T - 2 7 " # 6? P-N-P silicon planar epitaxial transistors in a plastic TO-92 envelope. N-P-N complementary types are BCX58 and BCX59.


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    BCX78 BCX79 7110fl2b 0D420fl4 BCX58 BCX59. A4BB018 T-27-09 BCX78 BCX79 BCX59 PDF

    cx59

    Abstract: X58-7 cx59 v
    Text: MOTORCLA SC fc.3b?aS4 □005^00 b I 12E D I XSTRS/R F -T -a i-ii BCX58-7, -8, -9, -10 BCX59-7, “8, -9, -10 M A X IM U M RATINGS Sym bol BCX 58 BCX 59 U n it C olle ctor-Em itte r V o ltage VcEO 32 45 Vdc C o lle cto r-B a se V o ltage VCBO 32


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    BCX58-7, BCX59-7, cx59 X58-7 cx59 v PDF

    BCX20

    Abstract: No abstract text available
    Text: S IE M E N S NPN Silicon A F Transistors BCX 58 BCX 59 • High current gain • Low collector-emitter saturation voltage • Complementary types: B C X 78, B C X 79 PNP Type BCX BCX BCX BCX BCX BCX Marking 58 58 58 59 59 59 VIII IX X VIII IX X Ordering Code


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    Q62702-C619 Q62702-C620 Q62702-C621 Q62702-C623 Q62702-C624 Q62702-C625 flH35b05 BCX58 BCX20 PDF

    BC251

    Abstract: BC251A 8C252 BC252 BC256 bcX59 BC251B BC252C BC556 BCX59-8
    Text: MOTOROLA SC ÍXSTRS/R F> 6367254 Tb MOTOROLA SC dF | fc,3L,7ES4 DDfilb?!, 96D XSTRS/R F D 81676 7 * 2 9 - /[1 BC251,A,B,C BC252,A,B,C BC256,A,B M A X I M U M R A T IN G S Sym bol R a tin g BC BC BC 2 5 6 251 2 5 2 U n it C o lle c to r-E m itte r Voltage


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    PDF

    TRANSISTOR BC 137

    Abstract: TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815
    Text: P h ilip s Sem iconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors G ENER AL-PU R PO SE LO W -FREQ UENCY TRANSISTO RS OVERVIEW PRO DUCT DATA: PAG ES 7-16 LOW -POW ER NPN surface-m ount leaded


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    BC107/108 BCY58/59 2N2483/2484 BC546/547 BCX58 JC500/501 JC546-48 PS3704-3706 MPS3904 PS6513-6515 TRANSISTOR BC 137 TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815 PDF

    BF194

    Abstract: BC639 BC639-10 BC639-16 BCX58 BCX58-10 BCX58-7 BCX58-8 BCX58-9 BCX59
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. SC637-16 BC639 BC639-10 BC639-16 ^C80 Vceo (V) (V) Min Min 60 80 80 80 60 80 80 80 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^EBO PD (W) W Min @Tc=25’( 5 5 5 5 0.8 0.8


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    SC637-16 O-92-1 BC639 BC639-10 BC639-16 O-92-4 BCX59 BF194 BCX58 BCX58-10 BCX58-7 BCX58-8 BCX58-9 PDF

    transistor bf194

    Abstract: BF194 G7M-DR20u BC637-16 BC639 BC639-10 BC639-16 BCX58 BCX58-10 BCX58-7
    Text: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Maximum Ratings Type No. BC637-16 ^CBO ^CEO ' ebo (V) Min (V) Min (V) Min 60 60 BC639-16 *CBO ^CB 'c e s v ce (pA) @ (V) (pA) @ (V) 0.1 0.1 1.0 0.8 0.1


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    BC637-16 BC639 BC639-10 BC639-16 BCX58 BCX58-10 BCX58-7 BCX58-8 BCX58-9 BCX59 transistor bf194 BF194 G7M-DR20u BC637-16 BC639 BC639-10 BC639-16 BCX58 BCX58-10 BCX58-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BC637-16 BC639 BC639-10 "C E O 'E B O (V) Min (V) Min (V) Min 60 60 CBO 80 80 80 SC639-16 Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Po (W) @Tc=25”( 0.8 0.8 0.8 80 0.8


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    BC637-16 BC639 BC639-10 SC639-16 BCX58-10 O-92-1 BCX59-7 O-92-4 PDF

    bc327 smd

    Abstract: bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd
    Text: Philips Sem iconductors Small-signal Transistors Conversion list CONVERSION LIST FROM LEADED TO SMD TYPES LEADED SMD LEADED SMD LEADED SMD BC107 BC847 BC546 BC846 BC107A BC847A BC546A BC846A BC107B BC847B BC546B BC846B BC108 BC848 BC547 BC847 BC108A BC848A


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    BC107 BC107A BC107B BC108 BC108A BC108B BC108C BC109 BC109B BC109C bc327 smd bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd PDF

    2N5551 TO-39

    Abstract: BSy95a BSX59 TO-39 1000 V
    Text: Philips Semiconductors Concise Catalogue 1996 Small-signal transistors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS SWITCHING TRANSISTORS LEADED TYPES ratings type number characteristics hFE 0 min./max. VCEO max. V 'c max. (mA) P.o. max. (mW)


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    BC875 BC877 BC879 BCX58 BCY58 BCY59 BDX35 BDX36 BDX37 BF370 2N5551 TO-39 BSy95a BSX59 TO-39 1000 V PDF

    BC182 BC547

    Abstract: bc557 TO92C
    Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching Type M axim um Ratings VCBO '< N=NPN P=PNP BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC257 BC258 BC259 BC307 BC308 BC309 BC327 BC328


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    BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC182 BC547 bc557 TO92C PDF

    BCX29

    Abstract: BF199 RF Bf240 BF906 CEB npn BF368 BF199 BCX25 BCX26 BCX28
    Text: I N D U S T R I A L T R A N S I S T O R S TO-92 These devices are special prodbcts ranges intended fo r use in applications w hich require well specified high perform ing devices like high q u a lity am plifier differen tial input, driver stage. NPN PN P


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    BCX25 BCX26 BCX27 BCX28 BCX29 BCX30 BCX45 BCX46 BCX47 BCX48 BF199 RF Bf240 BF906 CEB npn BF368 BF199 PDF

    transistor bsw 67

    Abstract: transistor BD139 PH 71 BC547 BSR512 BCY883 BSW 68 transistor BC548 Transistor 2N2219A Transistor BSX45 PHILIPS PN2222A
    Text: Concise Catalogue 1996 P hilip s Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors GENERAL-PURPOSE LOW-FREQUENCY BIPOLAR TRANSISTORS ratings type num ber P,o. max. mW hpE @ min./max. (V) 'c max. (mA) BC107


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    BC107 BC10B BC140 BC141 BC337 BC337A BC338 BC368 BC517 BC546 transistor bsw 67 transistor BD139 PH 71 BC547 BSR512 BCY883 BSW 68 transistor BC548 Transistor 2N2219A Transistor BSX45 PHILIPS PN2222A PDF