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    BCW 95 TRANSISTOR Search Results

    BCW 95 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BCW 95 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor BD 540

    Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108
    Text: 6 0 9 y e a MICRO ELECTRONICS CORF D E | b [ m 7 f i a DOGObS? D | 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches


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    609yea BCW94 O-92F BCW96 BCW95 BCW97 BCW94 transistor BD 540 Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108 PDF

    transistor BR A 94

    Abstract: bcw 25 transistor bcw 94 b transistor A 94 bcw 95 transistor transistor BCW 94 c bcw94b BCW95 BCW95B bcw94A
    Text: BCW94 A.B.C BCW95A.B NPN SILICO N TRANSISTOR, EPIT A X IA L PLANAR T R A N S IS T O R N P N S IL IC IU M , P L A N A R E P IT A X IA L • LF Amplification Amplification B F CE0 I 40 V BCW 94 160 V BCW 95 ■c °<4 A h ,1P 100-200 (A <B) (C) (1 5 0 m A 7 w iS 1 5 0 ' 3 0 0


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    wil150 CB-76 transistor BR A 94 bcw 25 transistor bcw 94 b transistor A 94 bcw 95 transistor transistor BCW 94 c bcw94b BCW95 BCW95B bcw94A PDF

    bc 540

    Abstract: BCW90 bcw 94 b ESM636 BCW91B ESM 639 BCW 90 BCW91 ESM638 Esm635
    Text: o general purpose transistors — plastic case transistors usage général — boîtier plastique M axim um ratings Type NPN PNP THOMSON-CSF Characteristics at 25°C Ptot VCEO mW (V) BC 559 BC 559 B BC 559 C 500 25 125 200 420 BC 560 BC 560 B BC 560 C 500


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    BCW90 CB-76 bc 540 bcw 94 b ESM636 BCW91B ESM 639 BCW 90 BCW91 ESM638 Esm635 PDF

    transistor Bc 540

    Abstract: TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -c s f Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


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    BCW94 CB-76 transistor Bc 540 TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635 PDF

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEMICOND/DISCRETE TS dF | 7 S 2 0 S 3 3 □ 0 0 4 citi3 0 | 7220533 PLESSEY SEMICOND/DISCRETE 95 D 0 4 9 6 3 SOT-23 TRANSISTORS PN P G E N E R A L P U R P O S E T '^ ^ ' 1 R A T IN G S A N D C H A R A C T E R IS T IC S at 25°C ambient temperature.


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    7S20S33 OT-23 BC856A BC856B FMMT3905 BC858A BC858B BC858C BC859A BC859B PDF

    BCW29R

    Abstract: BCW30R SOT213 BCV72 BCW29 BCW30 BFQ31 BFQ31A ferranti SOT MARKING 213
    Text: FERRANTI semiconductors BCW29 BCW30 PNP S ilicon Planar Small Signal Transistors DESCRIPTION These devices are intended fo r use in low level, general purpose applications. Encapsulated in the popular SOT-23 package these devices are designed sp e cifica lly fo r use in thin and th ick film


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    BCW29 BCW30 OT-23 BCW29 BCW30 FMMT5087 BCW69 BCW70 BCX71G BCW29R BCW30R SOT213 BCV72 BFQ31 BFQ31A ferranti SOT MARKING 213 PDF

    kn sot23

    Abstract: sot-23 Marking KN BSV52 A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR
    Text: * FERRANTI semiconductors BSV52 NPN Silicon Planar High Speed Switching Transistor D E S C R IP TIO N This d evice is in te n d ed s p e c ific a lly fo r use in high speed, lo w c u rre n t s w itc h in g a p p lica tio n s. Encapsulated in th e p o p u la r S O T -2 3 package th ese devices


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    BSV52 OT-23 BSV52 Volt00/300 FMMT2222 FMMT2369A FMMT2369 BSS82B kn sot23 sot-23 Marking KN A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR PDF

    bcw 94 b

    Abstract: BF-139 F 540 NS BSY54 BCW95B BSY55
    Text: CB 76 (CB 6} (CB 7) Silicon NPN transistors, general purpose (continued) Tamb= 25 °C Transistors N P N silicium , usage générai (suite) (mW) VCEO (V) h21 E VCER* h21E V c E X a min max F 139 Bc F 139 B<> F 139 B TO 18 TO 18 540 540 540 330 330 40 60 60


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    2sd 5023

    Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


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    -26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945 PDF

    2sd 5023

    Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


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    13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345 PDF

    bcw 95 transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BCW69; BCW70 PNP general purpose transistors Product specification Supersedes data of 1997 Mar 06 Philips Semiconductors 1999 Apr 19 PHILIPS PHILIPS Philips Semiconductors Product specification PNP general purpose transistors BCW69; BCW70


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    BCW69; BCW70 BCW70 BCW71 SCA63 5002/00/03/pp8 bcw 95 transistor PDF

    bcw 95 transistor

    Abstract: transistor NPN 3474 transistor bc 209 npn bc 301 transistor
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors BCW60 series FEATURES PINNING • Low curren t max. 100 mA


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    BCW60 BCW61 SCA63 115002/00/03/pp8 bcw 95 transistor transistor NPN 3474 transistor bc 209 npn bc 301 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jan 29 Philips Sem iconductors 1999 Apr 13 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors BCW31 ; BCW32; BCW33 FEATURES PINNING • Low curren t 100 mA


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    BCW31 BCW32; BCW33 BCW31 MAM255 115002/00/03/pp8 PDF

    rkm 33 transistor

    Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
    Text: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.


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    FMA10A FMA11A IMB10A IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A rkm 33 transistor bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor PDF

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


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    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    Untitled

    Abstract: No abstract text available
    Text: BCW61 ELECTRICAL CHARACTERISTICS at Tamb= 25°C unless otherwise stated . PARAMETER SYM B O L M IN . C ollector-Em itter Breakdown Voltage U N IT C O N D ITIO NS. V (BR)CEO -32 V lCEc f-2 m A Emitter-Base Breakdown Voltage V(BR)EBO -5 V 'e b c t ' V A Collector-Em itter C ut-off


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    BCW61 -501X1A, PDF

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


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    76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    r107c

    Abstract: 2SC622 BFS29P transistor A495 2SC621 SE504 2sc113 2SC804 FET K5010 2SC621A
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B r107c 2SC622 BFS29P transistor A495 2SC621 SE504 2sc113 2SC804 FET K5010 2SC621A PDF

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


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    2sc113

    Abstract: EM 18 OC318 2N1056 2G271 TF75 2G110 2G319 2G524 2SB219
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B 2sc113 EM 18 OC318 2N1056 2G271 TF75 2G110 2G319 2G524 2SB219 PDF

    2N2392

    Abstract: 2N1500/18 T05 Package PNP power transistor 2n TRANSISTOR BC157 2SA402 2SC621 MT2412 2sc113 2SC641H BSW12
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B 2N2392 2N1500/18 T05 Package PNP power transistor 2n TRANSISTOR BC157 2SA402 2SC621 MT2412 2sc113 2SC641H BSW12 PDF