Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BCR108T Search Results

    SF Impression Pixel

    BCR108T Price and Stock

    Infineon Technologies AG BCR 108T E6327

    TRANS PREBIAS NPN 50V 0.1A SC75
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BCR 108T E6327 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Others BCR108T

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange BCR108T 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    BCR108T Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BCR108T Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SC-75 Original PDF
    BCR108T Infineon Technologies NPN Silicon Digital Transistor Original PDF
    BCR108T Infineon Technologies SC75 package Original PDF
    BCR108T Infineon Technologies Dual Built-in Resistor AF Transistors 2xNPN Industrial Standars Types, Icmax of 100mA Vceo of 50V Original PDF
    BCR108TE6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW SC75 Original PDF
    BCR 108TE6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SC-75 T/R Original PDF
    BCR108TE6327 Infineon Technologies Original PDF
    BCR 108T E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW SC75 Original PDF
    BCR 108TE6433 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SC-75 T/R Original PDF
    BCR 108-T&R Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 T/R Original PDF

    BCR108T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCR108T

    Abstract: SC75
    Text: BCR108T NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR108T WHs Pin Configuration 1=B 2=E Package 3=C SC75


    Original     		PDF BCR108T VPS05996 EHA07184 Jul-16-2001 BCR108T SC75

    BCR108T

    Abstract: SC75
    Text: BCR108T NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR108T WHs Pin Configuration 1=B 2=E Package 3=C SC75


    Original     		PDF BCR108T VPS05996 EHA07184 Nov-29-2001 BCR108T SC75

    BCR108T

    Abstract: BFR181T SC75
    Text: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR181T BCR108T BFR181T SC75

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    Untitled

    Abstract: No abstract text available
    Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking


    Original     		PDF BFR949T

    MARKING 3FS

    Abstract: MARKING CODE 21E SOT23 marking 3ks
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A MARKING 3FS MARKING CODE 21E SOT23 marking 3ks

    Untitled

    Abstract: No abstract text available
    Text: BFR182T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR182T VPS05996

    A1s sot23

    Abstract: BAW56S E6327 MARKING CODE A1s
    Text: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323


    Original     		PDF BAW56. BAW56 BAW56T BAW56W BAW56S BAW56U BAW56U A1s sot23 BAW56S E6327 MARKING CODE A1s

    marking FA

    Abstract: BFR340T
    Text: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR340T marking FA BFR340T

    Untitled

    Abstract: No abstract text available
    Text: BFR949T NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR949T VPS05996

    BFR949T

    Abstract: MA457 MARKING C6 BFR94
    Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking


    Original     		PDF BFR949T BFR949T MA457 MARKING C6 BFR94

    Untitled

    Abstract: No abstract text available
    Text: BCR191. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22 kΩ , R2 = 22 kΩ BCR191/F/L3 BCR191T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR191 WOs


    Original     		PDF BCR191. BCR191/F/L3 BCR191T/W EHA07183 BCR191 BCR191F BCR191L3 BCR191T BCR191W OT323

    Untitled

    Abstract: No abstract text available
    Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see


    Original     		PDF BCR135. BCR135S: BCR135/F/L3 BCR135T/W BCR135S EHA07184 EHA07174 BCR135 BCR135F

    66s marking

    Abstract: sot323 marking code A.C BAT 62 E6327
    Text: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAT64 BAT64-02V BAT64-02W BAT64-04 BAT64-04T BAT64-04W ! BAT64-05 BAT64-05W


    Original     		PDF BAT64. BAT64 BAT64-02V BAT64-02W BAT64-04 BAT64-04T BAT64-04W BAT64-05 BAT64-05W BAT64-06 66s marking sot323 marking code A.C BAT 62 E6327

    Untitled

    Abstract: No abstract text available
    Text: BCR164. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 10kΩ BCR164F/L3 BCR164T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR164F*


    Original     		PDF BCR164. BCR164F/L3 BCR164T EHA07183 BCR164F* BCR164L3* BCR164T* dissipationBCR164F, BCR164L3, BCR164T,

    E6327

    Abstract: BCR101 BCR101F BCR101L3 BCR101T BCR108T SC75
    Text: BCR101. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 100kΩ , R2 = 100kΩ BCR101F/L3 BCR101T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration Package BCR101F*


    Original     		PDF BCR101. BCR101F/L3 BCR101T EHA07184 BCR101F* BCR101L3* BCR101T* E6327 BCR101 BCR101F BCR101L3 BCR101T BCR108T SC75

    DIN 6784 c1

    Abstract: DIN 6784 E6327 BCR192 BCR192F BCR192L3 BCR192T BCR192U BCR192W infineon marking code B2 SOT23
    Text: BCR192. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR192. BCR192/F/L3 BCR192T/W BCR192U EHA07173 EHA07183 BCR192 BCR192F BCR192L3 BCR192T DIN 6784 c1 DIN 6784 E6327 BCR192 BCR192F BCR192L3 BCR192T BCR192U BCR192W infineon marking code B2 SOT23

    BCR108T

    Abstract: BCR196 BCR196F BCR196L3 BCR196T BCR196W SC75
    Text: BCR196. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47kΩ , R2 = 22kΩ BCR196/F/L3 BCR196T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR196 WXs 1=B


    Original     		PDF BCR196. BCR196/F/L3 BCR196T/W EHA07183 BCR196 BCR196F BCR196L3 BCR196T BCR196W OT323 BCR108T BCR196 BCR196F BCR196L3 BCR196T BCR196W SC75

    BCR198W

    Abstract: BCR198 BCR198F BCR198L3 BCR198S BCR198T SCD80
    Text: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package


    Original     		PDF BCR198. BCR198S: BCR198/F/L3 BCR198T/W BCR198S EHA07183 EHA07173 BCR198 BCR198F BCR198W BCR198 BCR198F BCR198L3 BCR198S BCR198T SCD80

    BCR148

    Abstract: BCR148F BCR148L3 BCR148S BCR148T
    Text: BCR148. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=47 kΩ, R2=47 kΩ • BCR148S / U: Two internally isolated transistors with good matching in one multichip package


    Original     		PDF BCR148. BCR148S BCR148/F/L3 BCR148T/W BCR148S/U EHA07184 EHA07174 BCR148 BCR148F BCR148 BCR148F BCR148L3 BCR148T

    BCR108T

    Abstract: BCR164 BCR164F BCR164L3 BCR164T E6327 SC75
    Text: BCR164. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 10kΩ BCR164F/L3 BCR164T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR164F*


    Original     		PDF BCR164. BCR164F/L3 BCR164T EHA07183 BCR164F* BCR164L3* BCR164T* BCR108T BCR164 BCR164F BCR164L3 BCR164T E6327 SC75

    BCR119

    Abstract: BCR119F BCR119L3 BCR119S BCR119T BCR119W SCD-80
    Text: BCR119. NPN silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1 =4.7 kΩ • BCR119S: Two internally isolated transistors with good matching in one multichip package • BCR119S: For orientation in reel see


    Original     		PDF BCR119. BCR119S: BCR119/F/L3 BCR119T/W BCR119S EHA07264 EHA07265 BCR119 BCR119F BCR119 BCR119F BCR119L3 BCR119S BCR119T BCR119W SCD-80

    BCR169

    Abstract: BCR169F BCR169L3 BCR169S BCR169T SOt323 marking code 6X
    Text: BCR169. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ • BCR169S / U: Two internally isolated transistors with good matching in one multichip package • BCR169S / U: For orientation in reel see


    Original     		PDF BCR169. BCR169S BCR169/F/L3 BCR169T/W BCR169S/U EHA07180 EHA07266 BCR169 BCR169F BCR169 BCR169F BCR169L3 BCR169T SOt323 marking code 6X

    DIN 6784

    Abstract: BCR108T BCR114 BCR114F BCR114L3 BCR114T E6327 SC75
    Text: BCR114. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =4.7kΩ, R2 =10kΩ BCR114/F BCR114L3/T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration BCR114 U4s 1=B 2=E


    Original     		PDF BCR114. BCR114/F BCR114L3/T EHA07184 BCR114 BCR114F BCR114L3 BCR114T Aug-29-2003 DIN 6784 BCR108T BCR114 BCR114F BCR114L3 BCR114T E6327 SC75