Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BC516 TRANSISTOR Search Results

    BC516 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    BC516 TRANSISTOR Price and Stock

    onsemi BC516-D27Z

    BC516 Series 30 V 1 A 625 mW PNP Darlington Transistor - TO-92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com BC516-D27Z 8,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0639
    		Buy Now

    BC516 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC516

    Abstract: bc517 SC-43A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of 1999 Apr 23 2004 Nov 05 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA


    Original     		PDF M3D186 BC516 BC517. MAM303 SCA76 R75/04/pp6 BC516 bc517 SC-43A

    bc516

    Abstract: bc517 BC517 data sheet
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 16 1999 Apr 23 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA


    Original     		PDF M3D186 BC516 BC517. MAM303 SCA63 115002/00/03/pp8 bc516 bc517 BC517 data sheet

    BC516

    Abstract: BC516 equivalent transistor BC516 bc517 SC-43A bC516 transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC516 PNP Darlington transistor Product data sheet Supersedes data of 1999 Apr 23 2004 Nov 05 NXP Semiconductors Product data sheet PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA


    Original     		PDF M3D186 BC516 BC517. MAM303 R75/04/pp6 BC516 BC516 equivalent transistor BC516 bc517 SC-43A bC516 transistor

    BC516

    Abstract: No abstract text available
    Text: BC516 BC516 PNP Darlington Transistor • This device is designed for applications reguiring extremely high current gain at currents to 1mA. • Sourced from process 61. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TA=25°C unless otherwise noted


    Original     		PDF BC516 BC516

    BC516 equivalent

    Abstract: BC516
    Text: BC516 BC516 PNP Darlington Transistor • This device is designed for applications reguiring extremely high current gain at currents to 1mA. • Sourced from process 61. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TA=25°C unless otherwise noted


    Original     		PDF BC516 BC516 equivalent BC516

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. MAXIMUM RATING Ta=25 2002. 11. 13 Revision No : 0 1/1


    Original     		PDF BC516

    BC516 equivalent

    Abstract: str 6707 datasheet str 6707 str 6707 datasheet bc517 StR 40000 BC517 data sheet darlington pnp DATASHEET OF IC 733 PO 903
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 16 Philips Semiconductors Product specification PNP Darlington transistor


    Original     		PDF M3D186 BC516 BC517. MAM303 SCA54 117047/00/02/pp8 BC516 equivalent str 6707 datasheet str 6707 str 6707 datasheet bc517 StR 40000 BC517 data sheet darlington pnp DATASHEET OF IC 733 PO 903

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BC516 TRANSISTOR PNP 1.COLLECTOR FEATURES z High DC Current Gain z High Collector Current 2.BASE 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF BC516 -20mA -100mA -10mA -10mA, 100MHz

    BC516

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V -10 V Collector Current


    Original     		PDF BC516 -100mA, 100MHz BC516

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N E K MAXIMUM RATING Ta=25℃ G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V -10 V Collector Current


    Original     		PDF BC516 -10mA, -100mA, 100MHz

    BC516 equivalent

    Abstract: transistor BC516 BC516
    Text: BC516 PNP Silicon Darlington Transistor Collector Base Emitter 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage


    Original     		PDF BC516 BC516 equivalent transistor BC516 BC516

    BC517

    Abstract: BC516 MPSA14 MPSA25 npn darlington TO92 transistor BC516 mps-a14 BC516 equivalent BC617 BC517 data sheet
    Text: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN LOW-POWER DARLINGTON TRANSISTORS TYPE NUMBER PACKAGE VCES max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) 125 – PNP COMPL.


    Original     		PDF 2N6427 BC517 BC516 BC617 BC618 MPSA13 MPSA63 MPSA14 MPSA64 MPSA25 BC517 BC516 MPSA14 MPSA25 npn darlington TO92 transistor BC516 mps-a14 BC516 equivalent BC617 BC517 data sheet

    BC516

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC516 PNP Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 16 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES


    OCR Scan     		PDF BC516 BC517. 115002/00/03/pp8 BC516

    BC517

    Abstract: BC516 bc516 micro electronics
    Text: J BC 516 BC 517 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS J The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.


    OCR Scan     		PDF BC516 BC517 T0-92F 400mA 625mW 100nA 100mA 20MHz bc516 micro electronics

    BC517

    Abstract: BC516 bc516 micro electronics bc 517
    Text: BC 5 1 6 BC 5 1 7 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS JP*. %. CASE T0-92F The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence


    OCR Scan     		PDF BC517 T0-92F 400mA 625mW 100mA BC516 20MHz 80x69477 bc516 micro electronics bc 517

    bc516

    Abstract: transistor BC516 transistor 257
    Text: Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 emitter • Very high DC current gain (min. 30000). 2 base 3 collector APPLICATIONS • Where very high amplification is required.


    OCR Scan     		PDF BC516 BC517. MAM303 bc516 transistor BC516 transistor 257

    Untitled

    Abstract: No abstract text available
    Text: BC517 _ SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar d a rlin g to n transistor in a plastic TO 92 package. P-N-P com plem ent is BC516. Q UICK REFERENCE D A T A v CEO max. Collector-base voltage open em itter 30 V v CBO max. 40 V


    OCR Scan     		PDF BC517 BC516.

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE D bbSBTBl 0DE755b fiOO BC517 l IAPX SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic TO-92 envelope. P-N-P complement is BC516. Q U IC K R E F E R E N C E D A T A v CEO max. 30 V Collector-base voltage open emitter


    OCR Scan     		PDF 0DE755b BC517 BC516.

    BC516

    Abstract: BC517 HFE-30
    Text: N AMER P H I L I P S / D I S C R E T E bTE D • b b5 3T 31 G0E755b Ô00 L '' BC517 SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic T O -92 envelope. P-N-P complement is BC516. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF bb53T31 G0E755b BC517 BC516. BC516 BC517 HFE-30

    Untitled

    Abstract: No abstract text available
    Text: BC516 J V_ SILICON PLANAR DARLINGTON TRANSISTOR P-N-P s ilic o n p la n a r d a rlin g to n tra n s is to r in a p la s tic T O 9 2 p a cka g e . N -P-N c o m p le m e n t is B C 517. Q U IC K R E F E R E N C E D A T A - v CE0 m a x. 30 V C o lle c to r-b a s e v o lta g e o pen e m itte r


    OCR Scan     		PDF BC516

    BC516

    Abstract: BC517
    Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Darlington Transistors Type M axim um R atings N=NPN P=PNP BCP28 BCP29 BCP48 BCP49 BCV26 BCV27 BCV28 BCV29 BCV46 BCV47 BCV48 BCV49 BSP50 BSP51 BSP52 BSP60 BSP61 BSP62 PZTA13 PZTA14


    OCR Scan     		PDF BCP28 BCP29 BCP48 BCP49 BCV26 BCV27 BCV28 BCV29 BCV46 BCV47 BC516 BC517

    MT4104

    Abstract: BCW83 bc517 2n5306 to 92F
    Text: Miniature Transistors TYPE POLA­ CASE NO. RITY MAXIMUM RATINGS Pd Ic VcEO mA (mW) (V) H fe min max Ic (mA) VcE (V) BC146 BC146R BC146Y BC146G BC200 N N N N P MT-42 MT-42 MT-42 MT-42 MT-42 50 50 50 50 50 50 50 50 50 50 20 20 20 20 20 80 80 140 280 50 550


    OCR Scan     		PDF BC146 BC146R BC146Y BC146G BC200 BC200R BC200Y BC200G BCW83 CL151-4 MT4104 bc517 2n5306 to 92F

    Untitled

    Abstract: No abstract text available
    Text: Miniature Transistors TYPE NO. BC146 BC146R BC146Y BC146G BC200 N N N N BC200R BC200Y BC200G BCW83 CL151-4 P P P IC VCE VCE sat max IC rr min N.F. m ai f min max (mA) (V) (V) (mA) (MHz) (dB) (Hz) 20 20 20 20 20 SO 550 80 200 140 350 280 550 50 400 0.2 0.2


    OCR Scan     		PDF 30-15K BC146 BC146R BC146Y BO-92F O-92A

    BC200G

    Abstract: MT4102 SO 42 P BC146G BCW83 MPSD54 MT 87 BC146 BC146R BC146Y
    Text: P O L A R IT Y M in ia tu re Transistors TYPE NO. M A X IM U M R A TIN G S H CASE 'c Pd mW (mA) V CE(SAT) FE •c VCEO (V ) min max (mA) VC E 0 (V) max 'c fr N .F. min max f (M Hz) (dB) (Hz) (V ) (mA) _ _ - — — 150+ 80+ 110+ 150+ 150+ 1.5+ 1.5+ 4 1.5+


    OCR Scan     		PDF BC146 MT-42 30-15K BC146R BC146Y BC146G BC200G MT4102 SO 42 P BCW83 MPSD54 MT 87