bc337-40 npn transistor
Abstract: BC337 bc338 complementary BC337A JA02 BC337-40 BC33840
Text: BC337 BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 package, prim arily intended fo r use in driver and ou tput stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.
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BC337
BC337A
BC338
BC337,
BC337A,
BC338
BC327,
BC327A
BC328
bc337-40 npn transistor
bc338 complementary
JA02
BC337-40
BC33840
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BC337 pnp transistor datasheet
Abstract: transistor bc337 npn BC337 BC337-25 PNP transistor download datasheet NPN general purpose transistor BC337 transistor BC337-16 10D3 BC327 BC328 BC337-16
Text: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92
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BC337-xBK
BC338-xBK
UL94V-0
BC337
BC338
25plement
BC327
BC328
BC337 pnp transistor datasheet
transistor bc337 npn
BC337
BC337-25 PNP transistor download datasheet
NPN general purpose transistor BC337
transistor BC337-16
10D3
BC328
BC337-16
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Untitled
Abstract: No abstract text available
Text: BC337 / BC338 BC337 / BC338 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-05-30 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case
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BC337
BC338
UL94V-0
BC337
BC327
BC328
BC337-16
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BC358
Abstract: BC327 BC328 BC337 BC338
Text: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS 1 . CASE TO-92F THE BC337» BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS: WELL AS FOR UNIVERSAL APPLICATIONS. THE BC357, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,
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BC337,
BC338
BC327,
BC328
O-92F
BC337
625mW
BC358
BC327
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8C337
Abstract: 8C327 8C337-16 3C337 3C327A BC337A sc337 BC328 BC337 BC338
Text: !< - BC337^ BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 variant envelopes, prim arily intended fo r use in driver and o u tp u t stages o f audio amplifiers. The 8C337, BC337A, BC338 are complementary to the 8C327, 3C 327A and BC328 respectively.
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BC337xc.
BC337A
BC338
8C337,
BC337A,
BC338
8C327,
3C327A
BC328
8C337
8C327
8C337-16
3C337
BC337A
sc337
BC337
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Untitled
Abstract: No abstract text available
Text: BC 337 • BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS 11 _ 1 CASE TO-92F THE BC337» BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS; WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,
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BC337»
BC338
BC337,
BC327,
BC328
O-92F
BC337
625mW
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BC338-25
Abstract: BC337-25 CBE BC337-16 CBE BC337 leads BC337 CBE BC337 10D3 BC327 BC328 BC337-16
Text: BC337 / BC338 BC337 / BC338 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-05-30 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case
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BC337
BC338
UL94V-0
BC337
BC327
BC328
BC337-16
BC338-25
BC337-25 CBE
BC337-16 CBE
BC337 leads
BC337 CBE
10D3
BC328
BC337-16
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BC337 CBE 1,0 A
Abstract: BC337-25 CBE BC337-16 CBE BC337 CBE 10D3 BC327 BC328 BC337 BC337-16 BC337-25
Text: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2010-05-27 Power dissipation Verlustleistung ±0.1 CBE min 12.5 4.6 ±0.1 4.6 2 x 1.27 625 mW
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BC337-xBK
BC338-xBK
UL94V-0
BC337
BC338
BC327
BC328
BC337-16
BC337 CBE 1,0 A
BC337-25 CBE
BC337-16 CBE
BC337 CBE
10D3
BC328
BC337
BC337-16
BC337-25
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PDF
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BC337
Abstract: BC338 BC327 BC328 BC337 hfe PNP BC327
Text: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS CASE TO-92F THE BC337 » BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,
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BC337,
BC338
BC327,
BC328
O-92F
BC337
625mW
BC327
BC337 hfe
PNP BC327
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PDF
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Untitled
Abstract: No abstract text available
Text: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92
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BC337-xBK
BC338-xBK
UL94V-0
BC337
BC338
BC327
BC328
BC337-16
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BC33B
Abstract: bC338 philips BC337A BC337 typical application BC337 BC327 BC327A BC328 BC337-16 BC338
Text: BC337 BC337A BC338 PHILIPS I NTERNATIONAL 5bE D 711 00 2 b OOMM fla 0T1 « P H I N • SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.
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BC337
BC337A
BC338
711002b
BC337,
BC337A,
BC327,
BC327A
BC328
BC33B
bC338 philips
BC337 typical application
BC327
BC337-16
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BC331
Abstract: BC331 transistor transistor BC331 BC337 bc337-40 npn transistor BC337A BC337-26 TRANSISTOR BC338 BC327 BC327A
Text: BC337 BC337A BC338 1 PHILIPS INTERNATIONAL SbE D • 7110fl2b OOMllflfl DTX H I P H I N - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.
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BC337
BC337A
BC338
BC337,
BC337A,
BC338
BC327,
BC327A
BC328
BC337
BC331
BC331 transistor
transistor BC331
bc337-40 npn transistor
BC337A
BC337-26
TRANSISTOR BC338
BC327
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・High Current : IC=-800mA. ・DC Current Gain : hFE=100～630 VCE=-1V, Ic=-100mA . ・For Complementary with NPN type BC338.
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-800mA.
-100mA)
BC338.
BC328
-100mA
-500mA,
-50mA
-300mA
-10mA,
100MHz
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BC328
Abstract: BC338 BC338N
Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=-800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=-1V, Ic=-100mA . ᴌFor Complementary with NPN type BC338.
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BC328
-800mA.
-100mA)
BC338.
BC328
BC338
BC338N
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・High Current : IC=800mA. ・DC Current Gain : hFE=100～630 VCE=1V, Ic=100mA . ・For Complementary with PNP type BC328. MAXIMUM RATING (Ta=25℃)
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800mA.
100mA)
BC328.
BC338
100mA
500mA,
300mA
-10mA,
100MHz
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BC328
Abstract: BC338 transistor bc328
Text: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=1V, Ic=100mA . ᴌFor Complementary with PNP type BC328.
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BC338
800mA.
100mA)
BC328.
BC328
BC338
transistor bc328
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PDF
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TRANSISTOR BC338
Abstract: BC328 BC338
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC338 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-400 VCE=1V, Ic=100mA . • For Complementary with PNP type BC328.
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BC338
800mA.
100mA)
BC328.
TRANSISTOR BC338
BC328
BC338
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pin configuration PNP transistor BC327
Abstract: pin configuration Bc337 BC327 BC327A BC328 BC337 BC337A BC338 BC337 noise BC327 NPN transistor configuration
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer BC337 BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package Complementary Transistors For Use in Driver And Output Stages of Audio Amplifiers
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BC337
BC337A
BC338
BC327
BC327A
BC328
C-120
pin configuration PNP transistor BC327
pin configuration Bc337
BC327
BC327A
BC328
BC337
BC337A
BC338
BC337 noise
BC327 NPN transistor configuration
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PDF
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BC328
Abstract: BC338
Text: SEMICONDUCTOR TECHNICAL DATA BC338 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-630 VCe=1V, Ic=100mA . • For Complementary with PNP type BC328. MAXIMUM RATINGS (Ta=25°C)
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BC338
800mA.
100mA)
BC328.
BC328
BC338
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BC328
Abstract: BC338
Text: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. BC328 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100-400 VCe=-1V, Ic=-100mA . • For Complementary with NPN type BC338.
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BC328
-800mA.
-100mA)
BC338.
BC328
BC338
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PDF
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BC338N
Abstract: BC328 BC338 2BC328
Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC338. N E K
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BC328
-800mA.
-100mA)
BC338.
-100mA
-500mA,
-50mA
-300mA
-10mA,
100MHz
BC338N
BC328
BC338
2BC328
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PDF
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BC328
Abstract: BC338 2BC338
Text: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC328. N E K G
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BC338
800mA.
100mA)
BC328.
00TER
100mA
500mA,
300mA
-10mA,
100MHz
BC328
BC338
2BC338
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PDF
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102 TRANSISTOR
Abstract: BC327 BC328 BC327A TRANSISTOR BC327-40 BC327-16 BC327-25 BC328-16 BC328-25 BC337
Text: P-N-P transistors in plastic TO-92 variant envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC327, BC327A, BC328 are complementary to the BC337, BC337A and BC338 respectively. Q UICK REFERENCE D A TA BC327 BC327A BC328
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BC327
BC327A
BC328
BC327,
BC327A,
BC328
BC337,
BC337A
BC338
BC327
102 TRANSISTOR
BC327A
TRANSISTOR BC327-40
BC327-16
BC327-25
BC328-16
BC328-25
BC337
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BC337 leads
Abstract: pin configuration PNP transistor BC327 BC337 BC337 pnp transistor bc337 transistor datasheet bc338 complementary pin configuration Bc337 npn bc338 signal transistor BC337 NPN transistor datasheet BC328
Text: BC337 and BC338 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors NPN Features TO-226AA (TO-92) • NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suited for AF-driver stages and low power output stages.
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BC337
BC338
O-226AA
BC327
BC328
8-Mar-02
BC337 leads
pin configuration PNP transistor BC327
BC337 pnp transistor
bc337 transistor datasheet
bc338 complementary
pin configuration Bc337
npn bc338 signal transistor
BC337 NPN transistor datasheet
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