Untitled
Abstract: No abstract text available
Text: SC32B SMD POWER INDUCTORS XXX MARKING ● Features 1. Open frame construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS DC Resistance Ω MAX (2) (1) SC32B Inductance decrease BC32B I nduct ance decr ease by
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SC32B
SC32B
SC32B-100
100KHZ
SC32B-120
SC32B-150
SC32B-180
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Untitled
Abstract: No abstract text available
Text: SC32B SMD POWER INDUCTORS XXX MARKING Features 1. Open frame construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS Inductance Test uH Frequency DC Resistance ( MAX) (2) (1) Saturation(3) Temperature (4)
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SC32B
SC32B
SC32B-100
100KHZ
SC32B-120
SC32B-150
SC32B-180
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BC5578
Abstract: npn smd bc550 smd transistor smd 1FT BC5488 smd marking code BC817 BC546 SMD bc816 SMD MARKING CODE C2U SMD MARKING CODE c1l c1g smd
Text: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! TYPE NO. DESCRIPTION BVC*0 (VOUS) MM BVcto (VOLTS) MM *¥»0 (VOUS) MM 1*0 <8 Ve, (•*) (VOUS) MAX CMPT 918 CMPT2222A CMPT2369 CMPT2484
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OT-23
350mW
CMPT918
2N918
CMPT2222A
2N2222A
CMPT2369
2N2369
CMPT2484
2N2484
BC5578
npn smd bc550 smd
transistor smd 1FT
BC5488
smd marking code BC817
BC546 SMD
bc816
SMD MARKING CODE C2U
SMD MARKING CODE c1l
c1g smd
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BC32b
Abstract: No abstract text available
Text: Rating Symbol BC327 BC328 Unit C o llector-E m itter Voltage VCEO -4 5 -2 5 Vdc Collector-Base Voltage v CBO -5 0 -3 0 Vdc Em itter-Base Voltage vebo - 5 .0 Vdc C o llector C u rrent — C o ntin uous >c -8 0 0 m A dc Total Device D issipation a Derate above 25°C
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BC327
BC328
BC32b
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NF 924
Abstract: BC32B BC307A BC25SC TO92-4 BC327-10
Text: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. ^CBO (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Po ^CEO ^EBO (W) (V) (A) (V) Min Min Tc=25°c 'cBO (pA) Max ^CB ®(V) 'c e s ^c e •Ve ® (ma) e (V) Min Max
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O-92-1
BC25SC
BC259
BC259B
BC32-4
BC327A
O-92-4
BC328
BC328-10
NF 924
BC32B
BC307A
BC25SC
TO92-4
BC327-10
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: COIÎL TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd 'c (W) W @Tc=25°c 'c & (mA) @ Freq CDIL (MHz) (pF) Case Max Style @ V cbo ^CEO w Min (V) Min Min BC252C 30 25 5
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BC252C
BC256
BC256A
BC257
O-92-1
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MARKING ZX SOT-23
Abstract: BC813 CMSH3-40 smd diode marking 5d SOD-323 2N29C7A BC48b BC337 N Channel Mosfet SOT-23 12W SOT-89 smd marking ol smd diode 5d SOD-323
Text: Sm all Signal Transistors U.S. Specification Preferred Series SOT-23 Case, 350mW TYPE NO. b v CBO b v c e o b v e b o *BVc £S MIN hpE ICBO VCB e v CE « íc m mm V c e (SAT) 9 lc ^ob »T m *OFF #,CE$ (V) <V) <"A) MIN MIN MAX m MIN General Purpose Amplifier/Switches
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OT-23
350mW
CMPT8099
CMPT930
CMPT2222A
CMPT3904
CMPT4401
CMPT8599
SMPT29
500ns
MARKING ZX SOT-23
BC813
CMSH3-40
smd diode marking 5d SOD-323
2N29C7A
BC48b
BC337
N Channel Mosfet SOT-23 12W
SOT-89 smd marking ol
smd diode 5d SOD-323
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