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    BC328 NPN Search Results

    BC328 NPN Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy

    BC328 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC337 CBE

    Abstract: bc327 10D3 BC327-16 BC327-25 BC327-40 BC328 BC337 BC338 BC338 CBE
    Text: BC327 / BC328 BC327 / BC328 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-05-30 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case


    Original     		PDF BC327 BC328 UL94V-0 BC327 BC337 BC338 BC327-16 BC337 CBE 10D3 BC327-16 BC327-25 BC327-40 BC328 BC338 BC338 CBE

    BC337 CBE

    Abstract: BC338 CBE 10D3 BC327 BC327-16 BC327-25 BC327-40 BC328 BC328-16 BC337
    Text: BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2010-06-23 Power dissipation Verlustleistung ±0.1 CBE min 12.5 4.6 ±0.1 4.6 2 x 1.27 625 mW


    Original     		PDF BC327-xBK BC328-xBK UL94V-0 BC327 BC328 BC337 BC338 BC327-16 BC337 CBE BC338 CBE 10D3 BC327 BC327-16 BC327-25 BC327-40 BC328 BC328-16

    Untitled

    Abstract: No abstract text available
    Text: BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92


    Original     		PDF BC327-xBK BC328-xBK UL94V-0 BC327 BC328 BC337 BC338 BC327-16

    BC327 NPN transistor datasheet

    Abstract: bc327 equivalent transistor bc328 bc327 10D3 BC327-16 BC327-25 BC327-40 BC328 BC328-16
    Text: BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92


    Original     		PDF BC327-xBK BC328-xBK UL94V-0 BC327 BC328 BC337 BC338 BC327-16 BC327 NPN transistor datasheet bc327 equivalent transistor bc328 bc327 10D3 BC327-16 BC327-25 BC327-40 BC328 BC328-16

    Untitled

    Abstract: No abstract text available
    Text: BC327 / BC328 BC327 / BC328 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-05-30 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case


    Original     		PDF BC327 BC328 UL94V-0 BC327 BC337 BC338 BC327-16

    BC328

    Abstract: BC338 BC338N
    Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=-800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=-1V, Ic=-100mA . ᴌFor Complementary with NPN type BC338.


    Original     		PDF BC328 -800mA. -100mA) BC338. BC328 BC338 BC338N

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・High Current : IC=-800mA. ・DC Current Gain : hFE=100～630 VCE=-1V, Ic=-100mA . ・For Complementary with NPN type BC338.


    Original     		PDF -800mA. -100mA) BC338. BC328 -100mA -500mA, -50mA -300mA -10mA, 100MHz

    BC328

    Abstract: BC338 transistor bc328
    Text: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=1V, Ic=100mA . ᴌFor Complementary with PNP type BC328.


    Original     		PDF BC338 800mA. 100mA) BC328. BC328 BC338 transistor bc328

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・High Current : IC=800mA. ・DC Current Gain : hFE=100～630 VCE=1V, Ic=100mA . ・For Complementary with PNP type BC328. MAXIMUM RATING (Ta=25℃)


    Original     		PDF 800mA. 100mA) BC328. BC338 100mA 500mA, 300mA -10mA, 100MHz

    equivalent for BC337

    Abstract: NPN general purpose transistor BC337 BC337-25 PNP transistor download datasheet bC328 philips BC327 NPN transistor datasheet TRANSISTOR BC337-25 PNP equivalent for BC327 BC337 equivalent BC337 NPN transistor datasheet bc3378
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC327; BC327A; BC328 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 10 Philips Semiconductors Product specification


    Original     		PDF M3D186 BC327; BC327A; BC328 BC337, BC337A BC338. equivalent for BC337 NPN general purpose transistor BC337 BC337-25 PNP transistor download datasheet bC328 philips BC327 NPN transistor datasheet TRANSISTOR BC337-25 PNP equivalent for BC327 BC337 equivalent BC337 NPN transistor datasheet bc3378

    bc337 transistor datasheet

    Abstract: transistor bc337 npn OF TRANSISTOR BC337 bc337 fairchild BC337 NPN transistor datasheet BC337 BC338
    Text: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC328 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage


    Original     		PDF BC337/338 BC337/BC328 BC337 BC338 BC338 bc337 transistor datasheet transistor bc337 npn OF TRANSISTOR BC337 bc337 fairchild BC337 NPN transistor datasheet BC337

    BC338N

    Abstract: BC328 BC338 2BC328
    Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC338. N E K


    Original     		PDF BC328 -800mA. -100mA) BC338. -100mA -500mA, -50mA -300mA -10mA, 100MHz BC338N BC328 BC338 2BC328

    BC328

    Abstract: BC338 2BC338
    Text: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC328. N E K G


    Original     		PDF BC338 800mA. 100mA) BC328. 00TER 100mA 500mA, 300mA -10mA, 100MHz BC328 BC338 2BC338

    BC327

    Abstract: BC328 BC337 BC338 BOX69477 BCJ28 NPN bc338
    Text: BC 327 • BC 328 J PNP SILICON AF MEDIUM POWER TRANSISTORS i CASI TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338


    OCR Scan     		PDF BC327, BCJ28 BC328 BC337Â BC338 O-92F BC327 625mW BC337 BOX69477 NPN bc338

    bc 327 complementary pair

    Abstract: BC327 BC328 BC337 BC338
    Text: BC 327 • BC 328 PNP SILICON AF MEDIUM POWER TRANSISTORS 1 CASE TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STA G E S , AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338


    OCR Scan     		PDF BC327, BC328 BC337, BC338 O-92F BC327 625mW bc 327 complementary pair BC337

    bc337

    Abstract: BC338-25 BC338 BC327 NPN transistor
    Text: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC327/BC328 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Rating Symbol Characteristic Collector Emitter Voltage


    OCR Scan     		PDF BC337/338 BC327/BC328 BC337 BC338 BC337, bc337 BC338-25 BC338 BC327 NPN transistor

    transistor 835

    Abstract: Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649
    Text: Philips Semiconductors Alphanumeric index Selection guide PAGE BC327; BC327A; BC328 Silicon planar epitaxial transistor 58 BC337; BC337A; BC338 Silicon planar epitaxial transistor 59 BC546; BC547; BC548 Silicon planar epitaxial transistor 60 BC556; BC557; BC558


    OCR Scan     		PDF BC327; BC327A; BC328 BC337; BC337A; BC338 BC546; BC547; BC548 BC556; transistor 835 Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649

    Untitled

    Abstract: No abstract text available
    Text: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC327/BC328 ABSOLUTE MAXIMUM RATINGS Ta=25°C Rating Symbol Characteristic Collector Emitter Voltage


    OCR Scan     		PDF BC337/338 BC327/BC328 BC337 BC338 100mA 300mA

    BC328

    Abstract: BC338
    Text: SEMICONDUCTOR TECHNICAL DATA BC328 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC338.


    OCR Scan     		PDF BC328 -800mA. -100mA) BC338. BC328 BC338

    BC182 BC547

    Abstract: bc557 TO92C
    Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching Type M axim um Ratings VCBO '< N=NPN P=PNP BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC257 BC258 BC259 BC307 BC308 BC309 BC327 BC328


    OCR Scan     		PDF BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC182 BC547 bc557 TO92C

    TRANSISTOR BC338

    Abstract: BC328 BC338
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC338 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-400 VCE=1V, Ic=100mA . • For Complementary with PNP type BC328.


    OCR Scan     		PDF BC338 800mA. 100mA) BC328. TRANSISTOR BC338 BC328 BC338

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC328 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Emitter Voltage


    OCR Scan     		PDF BC337/338 BC337/BC328 BC337 BC338

    Untitled

    Abstract: No abstract text available
    Text: | a B C 338 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS Package: TO-92 * Suitable For AF-Driver Stages And Low Power Output Stages * Complement to Bc328 a ABSOLUTE MAXIMUM RATINGS at Tamb=25'C


    OCR Scan     		PDF Bc328 100uA 100mA 300mA 10VIe

    BC328

    Abstract: BC338
    Text: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. BC328 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100-400 VCe=-1V, Ic=-100mA . • For Complementary with NPN type BC338.


    OCR Scan     		PDF BC328 -800mA. -100mA) BC338. BC328 BC338