BC238 NPN transistor download datasheet
Abstract: lowest noise audio NPN transistor bc237 bc337 bc239 BC239 NPN transistor download datasheet BC238 TRANSISTOR W2 bc238 data sheet BC238 datasheet transistor bc237 datasheet
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B, C TO-92 Plastic Package General Purpose Transistor, Best Suited For use In Driver Stages Of Audio
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BC237
BC238
BC239
BC237
BC238
BC239
C-120
BC238 NPN transistor download datasheet
lowest noise audio NPN
transistor bc237 bc337
BC239 NPN transistor download datasheet
TRANSISTOR W2
bc238 data sheet
BC238 datasheet
transistor bc237 datasheet
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transistor bc238
Abstract: BC239 NPN transistor BC238 datasheet transistor bc237 bc337 BC237 BC238 BC239 BC238 NPN transistor download datasheet BC239 NPN transistor download datasheet 15KHZ
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B, C TO-92 Plastic Package General Purpose Transistor, Best Suited For use In Driver Stages Of Audio
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BC237
BC238
BC239
BC237
BC238
BC239
C-120
transistor bc238
BC239 NPN transistor
BC238 datasheet
transistor bc237 bc337
BC238 NPN transistor download datasheet
BC239 NPN transistor download datasheet
15KHZ
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BC237
Abstract: BC238B BC238 datasheet BC238B npn Bc238B, NPN BC239 NPN transistor download datasheet BC237A BC238 BC239 BC237B/2388/2398
Text: BC237,A,B,C BC238B,C BC239,C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0 5.0 5.0 Vdc Collector Current — Continuous
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BC237
BC238B
BC239
BC237
BC238
BC239
r14525
BC237/D
BC238 datasheet
BC238B npn
Bc238B, NPN
BC239 NPN transistor download datasheet
BC237A
BC238
BC237B/2388/2398
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BC238B
Abstract: BC237 BC239 BC238 MOTOROLA transistor bc237 BC238 datasheet BC237A BC238 bc237 motorola BC238B MOTOROLA
Text: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 237 BC 238 BC 239 Unit Collector – Emitter Voltage VCEO 45 25 25
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BC237/D
BC237
BC238B
BC239
BC237/D*
BC238 MOTOROLA
transistor bc237
BC238 datasheet
BC237A
BC238
bc237 motorola
BC238B MOTOROLA
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BC239C
Abstract: BC237 BC238B DATASHEET Transistor BC239c 238b BC238 datasheet BC239C equivalent BC237A BC238 BC239
Text: ON Semiconductort BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0
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BC237
BC238B
BC239C
BC237
BC238
BC239
r14525
BC237/D
BC239C
DATASHEET Transistor BC239c
238b
BC238 datasheet
BC239C equivalent
BC237A
BC238
BC239
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BC239
Abstract: BC237 BC238 TYP120 BC238 datasheet TYP150 TYP270 silicon planar epitaxial transistors BC239B CDIL BC237
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC237,238, A,B,C BC239, B,C NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" C BE Amplifier Transistors
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BC237
BC239,
BC237
BC238
C-120
239Rev
201205E
BC239
BC238
TYP120
BC238 datasheet
TYP150
TYP270
silicon planar epitaxial transistors
BC239B
CDIL BC237
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC237,238, A,B,C BC239, B,C NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" C BE Amplifier Transistors
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BC237
BC239,
BC237
BC238
C-120
239Rev
201205E
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bc238 equivalent
Abstract: BC237 equivalent bc237 equivalent transistor bc237c equivalent NPN Transistor BC238B equivalent BC237 BC238 h parameter bc237 pin lay-out BC237 sot23 bc237v
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC237 BC238 BC239 Unit Collector – Emitter Voltage VCEO 45 25 25 Vdc Collector – Emitter Voltage
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BC237
BC238B
BC239
BC238
226AA)
Re218A
MSC1621T1
MSC2404
bc238 equivalent
BC237 equivalent
bc237 equivalent transistor
bc237c equivalent
NPN Transistor BC238B equivalent
BC238 h parameter
bc237 pin lay-out
BC237 sot23
bc237v
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N67 ferrite
Abstract: siemens r10 core tl431 and pc817 EF25 transformer capacitor siemens 4700 35 tl431 feedback voltage pc817 NCP power transformer AND8127 optocoupler IC PC817 NCP1207
Text: AND8127/D Implementing NCP1207 in QR 24 W AC−DC Converter with Synchronous Rectifier Prepared by: Petr Lidak ON Semiconductor http://onsemi.com APPLICATION NOTE • Over−Load Protection: by continuously monitoring the Introduction The NCP1207 is a controller dedicated for driving the
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AND8127/D
NCP1207
NCP1207.
N67 ferrite
siemens r10 core
tl431 and pc817
EF25 transformer
capacitor siemens 4700 35
tl431 feedback voltage pc817
NCP power transformer
AND8127
optocoupler IC PC817
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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BC238B
Abstract: BC239 BC237A BC238 BC237 bc237v
Text: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC237,A,B,C BC238B,C BC239,C NPN Silicon COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol BC 237 BC 238 BC 239 Unit VCEO 45 25 25
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BC237/D
BC237
BC238B
BC239
O-226AA)
BC237A
BC238
bc237v
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BC238 h parameter
Abstract: 5v 3w audio amplifier 5.5w
Text: MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT IVIIGRO ELECTRONICS The MH8100 NPN , MH0810 (PNP) are complementary silicon planar epitaxial transistors designed fo r the output stages of 3 - 5 watt audio amplifiers. They are also suitable for
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MH8100
MH0810
O-220B
55KHz,
440mA
0I80HW*
00T8HH!
MH8100,
MH0810,
BC238,
BC238 h parameter
5v 3w audio amplifier
5.5w
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BC238 h parameter
Abstract: bc313 BC167 BC231 BC317 BC107 bc101 BC168 BC320 30Hz-15kHz
Text: CRO BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.
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BC107
BC167
BC237
BC317
BC107,
BC177,
BC167,
BC257,
BC237,
BC307,
BC238 h parameter
bc313
BC231
bc101
BC168
BC320
30Hz-15kHz
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BC167
Abstract: BC107 CE amplifier BC1O7 BC237 complementary hFE Group BC169 bc107 bc168
Text: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 CRO THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.
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BC107,
BC177,
BC167,
BC257,
BC237,
BC307,
BC317,
BC320,
O-92B
O-92F,
BC167
BC107 CE amplifier
BC1O7
BC237 complementary
hFE Group
BC169
bc107
bc168
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BC519
Abstract: fbc237 BC317 BC167 bc107-108-109 BC313 BC320 BC107 BC237 complementary BC238
Text: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.
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BC107,
BC177,
BC167,
BC257,
BC237,
BC307,
BC317,
BC320,
bc107
T0-92B
BC519
fbc237
BC317
BC167
bc107-108-109
BC313
BC320
BC237 complementary
BC238
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IN5246B
Abstract: No abstract text available
Text: MH88510/11 Subscriber Line Interface Circuit SLIC (g > M T T E L . ISSUE 3 Features • • • • • • • • • • • • • • • January 1994 Ordering Information High Gain Version MH88511 Compatible with popular MH88500 Operates with a wide range of battery voltages
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MH88510/11
MH88511
MH88500
MH88510
20-Pin
MH88511
12Max
IN5246B
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Untitled
Abstract: No abstract text available
Text: MH88510/11 MITEL Subscriber Line Interface Circuit SLIC Preliminary Information ISSUE 1 Features April 199 5 O rdering Inform ation High G ain version MH88511 C om patible with popular MH88500 M H88510 MH88511 O perates with a wide range of battery voltages
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MH88510/11
MH88511
MH88500
H88510
MH88510/11
IN4732
IN4003
D8-IN4148
IN5246B
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MPSA90
Abstract: IN5246B pabx ring generator IN4732 2-wire intercom hk relay relay 5v 5 pin MH88500 MH88510 MH88511
Text: M H 8 8 5 1 0 /1 1 MITEL Subscriber Line Interface Circuit SLIC P relim inary Inform ation ISSUE 1 Features April 1995 O rdering Inform ation High Gain version M H 88511 C om patible w ith popula r M H88500 O perates w ith a w ide range of battery voltages
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MH88510/11
MH88511
MH88500
MH88510
MH88511
MT8816
MH88510
MPSA90
IN5246B
pabx ring generator
IN4732
2-wire intercom
hk relay
relay 5v 5 pin
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