Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BC212 TRANSISTOR Search Results

    BC212 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC212 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC212

    Abstract: BC212B BC213 equivalent of transistor bc212 BC212BRL1 BC212BZL1
    Text: BC212, BC212B, BC213 Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC212 BC213 Collector-Base Voltage Vdc VCBO BC212 BC213 Emitter-Base Voltage Vdc 3 EMITTER –60 –45


    Original     		PDF BC212, BC212B, BC213 BC212 r14525 BC212/D BC212 BC212B BC213 equivalent of transistor bc212 BC212BRL1 BC212BZL1

    bc212

    Abstract: bc213
    Text: BC212, BC212B, BC213 Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC212 BC213 Collector-Base Voltage BC212 BC213 Emitter-Base Voltage VCEO VCBO Value Vdc Vdc 3 EMITTER −60 −45 −5.0 Vdc Collector Current − Continuous


    Original     		PDF BC212, BC212B, BC213 BC212 Ma-10

    BC212

    Abstract: BC214 BC214RL1 BC214 pin out bc212b equivalent bc213 equivalent equivalent of transistor bc212 BC212B BC212BRL1 BC212BZL1
    Text: BC212, BC212B, BC213, BC214 Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC212 BC213 BC214 Collector-Base Voltage Vdc –50 –30 –30 3 EMITTER VCBO BC212 BC213 BC214 Emitter-Base Voltage


    Original     		PDF BC212, BC212B, BC213, BC214 BC212 BC213 BC212 BC214 BC214RL1 BC214 pin out bc212b equivalent bc213 equivalent equivalent of transistor bc212 BC212B BC212BRL1 BC212BZL1

    BC212

    Abstract: BC213 bc212b
    Text: BC212, BC212B, BC213 Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC212 BC213 Collector-Base Voltage Vdc VCBO Vdc 3 EMITTER –60 –45 VEBO –5.0 Vdc Collector Current – Continuous


    Original     		PDF BC212, BC212B, BC213 BC212 C/W-10 bc212b

    equivalent of transistor bc212

    Abstract: bc213 equivalent bc212 replacement equivalent of transistor bc214 transistor bc214 2n441 BC237 BC212 FR4 dielectric constant 4.6 BC214 alternative
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC212,B PNP Silicon BC213 BC214 COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC212 BC213 BC214 Unit Collector – Emitter Voltage VCEO –50 –30 –30 Vdc Collector – Base Voltage


    Original     		PDF BC212 BC213 BC214 BC212 BC213 226AA) Ju218A MSC1621T1 MSC2404 equivalent of transistor bc212 bc213 equivalent bc212 replacement equivalent of transistor bc214 transistor bc214 2n441 BC237 FR4 dielectric constant 4.6 BC214 alternative

    equivalent of transistor bc212 bc 214

    Abstract: BC212 BC212B BC213 BC214 pin out bc212b equivalent BC214 BC 213 Motorola
    Text: MOTOROLA Order this document by BC212/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC212,B PNP Silicon BC213 BC214 COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 212 BC 213 BC 214 Unit Collector – Emitter Voltage VCEO –50 –30 –30


    Original     		PDF BC212/D BC212 BC213 BC214 BC212/D* equivalent of transistor bc212 bc 214 BC212B BC213 BC214 pin out bc212b equivalent BC214 BC 213 Motorola

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BC212 TRANSISTOR PNP 1.EMITTER FEATURES z General Purpose Switching and Amplification. 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF BC212 BC212B BC212C -100mA -10mA 100MHz

    equivalent of transistor bc212

    Abstract: BC212 data BC212 Transistor BC212 bc212* transistor
    Text: BC212 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier Absolute Maximum Ratings Ta = 25 OC Parameter 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage


    Original     		PDF BC212 equivalent of transistor bc212 BC212 data BC212 Transistor BC212 bc212* transistor

    Transistor BC212B

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC212, B, C FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: TRANSISTOR (PNP) TO-92 1. EMITTER 0.35 W (Tamb=25℃) -0.1 A 2. BASE


    Original     		PDF BC212, BC212 BC212B BC212C -10mA 100MHz Transistor BC212B

    BC212

    Abstract: TRANSISTOR BC 413 Transistor BC212 TRANSISTOR BC 212
    Text: DISCRETE POWER & SIGNAL TECHNOLOGIES BC212 SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO . . . . 50V Min hFE . . . . . . 60 (Min) @ VCE=5V, IC= 2mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature 2 3 C B E 0.135 - 0.145


    Original     		PDF BC212 200uA, 200Hz Pr6897 BC212 TRANSISTOR BC 413 Transistor BC212 TRANSISTOR BC 212

    BC214C

    Abstract: Transistor BC212A BC212A BC214B Transistor BC212 BC214 pin out Transistor BC214c BC214C equivalent BC213A transistor bc212 sheet
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC212, BC212A, BC212B BC213, BC213A, BC213B, BC213C BC214, BC214B, BC214C TO-92 Plastic Package Silicon Small Signal General Purpose Amplifier


    Original     		PDF BC212, BC212A, BC212B BC213, BC213A, BC213B, BC213C BC214, BC214B, BC214C BC214C Transistor BC212A BC212A BC214B Transistor BC212 BC214 pin out Transistor BC214c BC214C equivalent BC213A transistor bc212 sheet

    SS9014

    Abstract: MPSA18 BC550 low noise transistors SS9018 MPS4250 "cross-reference" BC238 BC239 BC212 KSP6521 MPS4250A
    Text: Small Signal Low Noise Transistors Part No. and Polarity NPN NF Max. hFE Condition Frequency V CEO MPS6523 MPS4250A MPS4250 PN4248 PN4250 BC212 BC308 BC309 BC560 SS9015 3.0 3.0 2.0 2.0 1.5 3.0 2.0 10.0 10.0 10.0 4.0 3.0 2.0 10.0 10.0 Audio Audio Audio Audio


    Original     		PDF MPS6523 MPS4250A MPS4250 PN4248 PN4250 BC212 BC308 BC309 BC560 SS9015 SS9014 MPSA18 BC550 low noise transistors SS9018 MPS4250 "cross-reference" BC238 BC239 BC212 KSP6521 MPS4250A

    bc212b

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC212, B, C TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 0.35 Collector current ICM : -0.1 Collector-base voltage V BR CBO : -60 TO—92 W （Tamb=25℃） 1. EMITTER


    Original     		PDF BC212, -10mA 100MHz 270TYP 050TYP bc212b

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors BC212, B, C FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: TRANSISTOR (PNP) TO-92 1. EMITTER 0.35 W (Tamb=25℃) -0.1 A 2. BASE 3. COLLECTOR -60 V 1 2 3 Operating and storage junction temperature range


    Original     		PDF BC212, BC212 BC212B BC212C -10mA 100MHz

    cbc212

    Abstract: KSS 213 BC212 BC214 BC214 pin out kss 213 b kss 213 c BC212B kss 210 BC213
    Text: MOTOROLA Order this document by BC212/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC212,B BC213 BC214 PNP Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Collector-Em itter Voltage Symbol BC 212 BC 213 BC 214 Unit VCEO -5 0 -3 0 -3 0 Vdc Collector-Base Voltage


    OCR Scan     		PDF BC212/D BC212 BC213 BC214 O-226AA) BC212/D cbc212 KSS 213 BC214 BC214 pin out kss 213 b kss 213 c BC212B kss 210

    bc213b

    Abstract: c214 bc214 C2-14 c212 BC214B BC213
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistors BC212,B BC213 BC214 PN P S ilicon C O L LE C T O R 3 1 EM ITTER MAXIMUM RATINGS Sym bol BC212 BC213 BC214 Unit C ollector-Em itter Voltage Rating VCEO -5 0 -3 0 -3 0 Vdc C o lle c to r-B a s e Voltage


    OCR Scan     		PDF BC212 BC213 BC214 BC214 bc213b c214 C2-14 c212 BC214B

    BC182 BC547

    Abstract: bc557 TO92C
    Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching Type M axim um Ratings VCBO '< N=NPN P=PNP BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC257 BC258 BC259 BC307 BC308 BC309 BC327 BC328


    OCR Scan     		PDF BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC182 BC547 bc557 TO92C

    bc 945

    Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
    Text: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549


    OCR Scan     		PDF O-92-Gehà BC238 BC309 O-126 OT-32. O-220-A. OT-78 T0-220-B. bc 945 BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135

    Untitled

    Abstract: No abstract text available
    Text: BC212 SEMICONDUCTOR _ TECHNICAL DATA PN P EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR A B SO LU TE M A X IM U M R A T IN G S a t T a n * = 2 5 4C Sym bol R atin g C h aracteristic U nit Collector-Base Voltage V cbo -60 V Collector-Emitter Voltage V ceo


    OCR Scan     		PDF BC212 -10uA -100m -10mA 100mA -100mA 300uS

    BCI82

    Abstract: BC212L BC212L complementary BC182 bc182l BCI82L BC21 BC212 NPN ECB
    Text: l/ K U DESCRIPTION The B C 182, B ' i 82L (N PN & BC212, B C 212L (PN P) are complem entary silicon planar epitaxial transistors for use in A F small signal amplifiers and drivers, as well as for low power universal applications. Both types feature good linearity o f D C current gain.


    OCR Scan     		PDF BC182L BC212 BC212L BC182, BC212, BC182 BCI82. BC212. BCI82 BC212L BC212L complementary bc182l BCI82L BC21 BC212 NPN ECB

    bc558c

    Abstract: BC212
    Text: SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS V CBO V CEO Dice type ^CBO Min. Min. Max. at VCB hFE at V CEIsatl lc VCE at lc Volts Volts nA Volts Min. Max. mA Volts Volts mA BC556A BC556B 80 80 ZTX504 BCY77A 70 60t BCY77B 60t BCY77C BC212 BC307 60t 60 50t


    OCR Scan     		PDF BC556A BC556B ZTX504 BCY77A BCY77B BCY77C BC212 BC307 BC557A BC557B bc558c

    bc212

    Abstract: cbc212 BC213 BC214 MOTOROLA
    Text: BC212,B BC213 BC214 MAXIMUM RATINGS Symbol BC BC BC 212 213 214 Collector-Emitter Voltage v CEO -5 0 -3 0 -3 0 Vdc Collector-Base Voltage v CBO -6 0 -4 5 -4 5 Vdc Emitter-Base Voltage Rating Unit v EBO -5 .0 Vdc Collector Current — Continuous !C -1 00 mAdc


    OCR Scan     		PDF BC212 BC213 BC214 O-226AA) BC214 BC212 cbc212 BC214 MOTOROLA

    BC212

    Abstract: BC212 data BC214 BC213 BC212B BC307 BC 212 BC 213 Motorola
    Text: BC212,B BC213 BC214 M AXIM UM RATINGS Symbol BC BC BC 212 213 214 VcEO -5 0 -3 0 -3 0 Vdc Collector-Base Voltage VcBO -6 0 -4 5 -4 5 Vdc Emitter-Base Voltage Vebo ic -5.0 Vdc -100 mAdc Total Device Dissipation @ T/^ = 25°C Derate above 25°C Pd 350 2.8 mW


    OCR Scan     		PDF BC212 BC213 BC214 O-226AA) BC212 data BC212B BC307 BC 212 BC 213 Motorola

    BC212C

    Abstract: Transistor BC212 BC212
    Text: M C C X 1 TO-92 P lastic-E n cap su late T ran sisto rs BC212,B,C TRANSISTOR PNP FEAT U R E S Pcm: 0.35W (Tamb=25'C) V ( b r )c b o : - 6 0 V H M » 0 * o r a g e junction tem perature range Tj.Tsib: -55t: to + 150TC ELECTRICAL CHARACTERISTICS (Tamb=25°C u n le s s o th e rw is e


    OCR Scan     		PDF BC212 150TC BC212B BC212C 100MHz Transistor BC212