BC212* TRANSISTOR Search Results

**BC212* TRANSISTOR Result Highlights (5)**

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

**BC212* TRANSISTOR Datasheets Context Search**

Catalog Datasheet	MFG & Type	Document Tags	PDF
BC212 Abstract: BC212B BC213 equivalent of transistor bc212 BC212BRL1 BC212BZL1 Text: BC212, BC212B, BC213 Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC212 BC213 Collector-Base Voltage Vdc VCBO BC212 BC213 Emitter-Base Voltage Vdc 3 EMITTER –60 –45	Original	BC212, BC212B, BC213 BC212 r14525 BC212/D BC212 BC212B BC213 equivalent of transistor bc212 BC212BRL1 BC212BZL1	PDF
bc212 Abstract: bc213 Text: BC212, BC212B, BC213 Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC212 BC213 Collector-Base Voltage BC212 BC213 Emitter-Base Voltage VCEO VCBO Value Vdc Vdc 3 EMITTER −60 −45 −5.0 Vdc Collector Current − Continuous	Original	BC212, BC212B, BC213 BC212 Ma-10	PDF
BC212 Abstract: BC214 BC214RL1 BC214 pin out bc212b equivalent bc213 equivalent equivalent of transistor bc212 BC212B BC212BRL1 BC212BZL1 Text: BC212, BC212B, BC213, BC214 Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC212 BC213 BC214 Collector-Base Voltage Vdc –50 –30 –30 3 EMITTER VCBO BC212 BC213 BC214 Emitter-Base Voltage	Original	BC212, BC212B, BC213, BC214 BC212 BC213 BC212 BC214 BC214RL1 BC214 pin out bc212b equivalent bc213 equivalent equivalent of transistor bc212 BC212B BC212BRL1 BC212BZL1	PDF
BC212 Abstract: BC213 bc212b Text: BC212, BC212B, BC213 Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC212 BC213 Collector-Base Voltage Vdc VCBO Vdc 3 EMITTER –60 –45 VEBO –5.0 Vdc Collector Current – Continuous	Original	BC212, BC212B, BC213 BC212 C/W-10 bc212b	PDF
equivalent of transistor bc212 Abstract: bc213 equivalent bc212 replacement equivalent of transistor bc214 transistor bc214 2n441 BC237 BC212 FR4 dielectric constant 4.6 BC214 alternative Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC212,B PNP Silicon BC213 BC214 COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC212 BC213 BC214 Unit Collector – Emitter Voltage VCEO –50 –30 –30 Vdc Collector – Base Voltage	Original	BC212 BC213 BC214 BC212 BC213 226AA) Ju218A MSC1621T1 MSC2404 equivalent of transistor bc212 bc213 equivalent bc212 replacement equivalent of transistor bc214 transistor bc214 2n441 BC237 FR4 dielectric constant 4.6 BC214 alternative	PDF
equivalent of transistor bc212 bc 214 Abstract: BC212 BC212B BC213 BC214 pin out bc212b equivalent BC214 BC 213 Motorola Text: MOTOROLA Order this document by BC212/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC212,B PNP Silicon BC213 BC214 COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 212 BC 213 BC 214 Unit Collector – Emitter Voltage VCEO –50 –30 –30	Original	BC212/D BC212 BC213 BC214 BC212/D* equivalent of transistor bc212 bc 214 BC212B BC213 BC214 pin out bc212b equivalent BC214 BC 213 Motorola	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BC212 TRANSISTOR PNP 1.EMITTER FEATURES z General Purpose Switching and Amplification. 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	BC212 BC212B BC212C -100mA -10mA 100MHz	PDF
equivalent of transistor bc212 Abstract: BC212 data BC212 Transistor BC212 bc212* transistor Text: BC212 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier Absolute Maximum Ratings Ta = 25 OC Parameter 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage	Original	BC212 equivalent of transistor bc212 BC212 data BC212 Transistor BC212 bc212* transistor	PDF
Transistor BC212B Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC212, B, C FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: TRANSISTOR (PNP) TO-92 1. EMITTER 0.35 W (Tamb=25℃) -0.1 A 2. BASE	Original	BC212, BC212 BC212B BC212C -10mA 100MHz Transistor BC212B	PDF
BC212 Abstract: TRANSISTOR BC 413 Transistor BC212 TRANSISTOR BC 212 Text: DISCRETE POWER & SIGNAL TECHNOLOGIES BC212 SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO . . . . 50V Min hFE . . . . . . 60 (Min) @ VCE=5V, IC= 2mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature 2 3 C B E 0.135 - 0.145	Original	BC212 200uA, 200Hz Pr6897 BC212 TRANSISTOR BC 413 Transistor BC212 TRANSISTOR BC 212	PDF
BC214C Abstract: Transistor BC212A BC212A BC214B Transistor BC212 BC214 pin out Transistor BC214c BC214C equivalent BC213A transistor bc212 sheet Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC212, BC212A, BC212B BC213, BC213A, BC213B, BC213C BC214, BC214B, BC214C TO-92 Plastic Package Silicon Small Signal General Purpose Amplifier	Original	BC212, BC212A, BC212B BC213, BC213A, BC213B, BC213C BC214, BC214B, BC214C BC214C Transistor BC212A BC212A BC214B Transistor BC212 BC214 pin out Transistor BC214c BC214C equivalent BC213A transistor bc212 sheet	PDF
SS9014 Abstract: MPSA18 BC550 low noise transistors SS9018 MPS4250 "cross-reference" BC238 BC239 BC212 KSP6521 MPS4250A Text: Small Signal Low Noise Transistors Part No. and Polarity NPN NF Max. hFE Condition Frequency V CEO MPS6523 MPS4250A MPS4250 PN4248 PN4250 BC212 BC308 BC309 BC560 SS9015 3.0 3.0 2.0 2.0 1.5 3.0 2.0 10.0 10.0 10.0 4.0 3.0 2.0 10.0 10.0 Audio Audio Audio Audio	Original	MPS6523 MPS4250A MPS4250 PN4248 PN4250 BC212 BC308 BC309 BC560 SS9015 SS9014 MPSA18 BC550 low noise transistors SS9018 MPS4250 "cross-reference" BC238 BC239 BC212 KSP6521 MPS4250A	PDF
bc212b Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC212, B, C TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 0.35 Collector current ICM : -0.1 Collector-base voltage V BR CBO : -60 TO—92 W （Tamb=25℃） 1. EMITTER	Original	BC212, -10mA 100MHz 270TYP 050TYP bc212b	PDF
Untitled Abstract: No abstract text available Text: TO-92 Plastic-Encapsulate Transistors BC212, B, C FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: TRANSISTOR (PNP) TO-92 1. EMITTER 0.35 W (Tamb=25℃) -0.1 A 2. BASE 3. COLLECTOR -60 V 1 2 3 Operating and storage junction temperature range	Original	BC212, BC212 BC212B BC212C -10mA 100MHz	PDF

cbc212 Abstract: KSS 213 BC212 BC214 BC214 pin out kss 213 b kss 213 c BC212B kss 210 BC213 Text: MOTOROLA Order this document by BC212/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC212,B BC213 BC214 PNP Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Collector-Em itter Voltage Symbol BC 212 BC 213 BC 214 Unit VCEO -5 0 -3 0 -3 0 Vdc Collector-Base Voltage	OCR Scan	BC212/D BC212 BC213 BC214 O-226AA) BC212/D cbc212 KSS 213 BC214 BC214 pin out kss 213 b kss 213 c BC212B kss 210	PDF
bc213b Abstract: c214 bc214 C2-14 c212 BC214B BC213 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistors BC212,B BC213 BC214 PN P S ilicon C O L LE C T O R 3 1 EM ITTER MAXIMUM RATINGS Sym bol BC212 BC213 BC214 Unit C ollector-Em itter Voltage Rating VCEO -5 0 -3 0 -3 0 Vdc C o lle c to r-B a s e Voltage	OCR Scan	BC212 BC213 BC214 BC214 bc213b c214 C2-14 c212 BC214B	PDF
BC182 BC547 Abstract: bc557 TO92C Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching Type M axim um Ratings VCBO '< N=NPN P=PNP BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC257 BC258 BC259 BC307 BC308 BC309 BC327 BC328	OCR Scan	BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC182 BC547 bc557 TO92C	PDF
bc 945 Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135 Text: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549	OCR Scan	O-92-GehÃ BC238 BC309 O-126 OT-32. O-220-A. OT-78 T0-220-B. bc 945 BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135	PDF
Untitled Abstract: No abstract text available Text: BC212 SEMICONDUCTOR _ TECHNICAL DATA PN P EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR A B SO LU TE M A X IM U M R A T IN G S a t T a n * = 2 5 4C Sym bol R atin g C h aracteristic U nit Collector-Base Voltage V cbo -60 V Collector-Emitter Voltage V ceo	OCR Scan	BC212 -10uA -100m -10mA 100mA -100mA 300uS	PDF
BCI82 Abstract: BC212L BC212L complementary BC182 bc182l BCI82L BC21 BC212 NPN ECB Text: l/ K U DESCRIPTION The B C 182, B ' i 82L (N PN & BC212, B C 212L (PN P) are complem entary silicon planar epitaxial transistors for use in A F small signal amplifiers and drivers, as well as for low power universal applications. Both types feature good linearity o f D C current gain.	OCR Scan	BC182L BC212 BC212L BC182, BC212, BC182 BCI82. BC212. BCI82 BC212L BC212L complementary bc182l BCI82L BC21 BC212 NPN ECB	PDF
bc558c Abstract: BC212 Text: SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS V CBO V CEO Dice type ^CBO Min. Min. Max. at VCB hFE at V CEIsatl lc VCE at lc Volts Volts nA Volts Min. Max. mA Volts Volts mA BC556A BC556B 80 80 ZTX504 BCY77A 70 60t BCY77B 60t BCY77C BC212 BC307 60t 60 50t	OCR Scan	BC556A BC556B ZTX504 BCY77A BCY77B BCY77C BC212 BC307 BC557A BC557B bc558c	PDF
bc212 Abstract: cbc212 BC213 BC214 MOTOROLA Text: BC212,B BC213 BC214 MAXIMUM RATINGS Symbol BC BC BC 212 213 214 Collector-Emitter Voltage v CEO -5 0 -3 0 -3 0 Vdc Collector-Base Voltage v CBO -6 0 -4 5 -4 5 Vdc Emitter-Base Voltage Rating Unit v EBO -5 .0 Vdc Collector Current — Continuous !C -1 00 mAdc	OCR Scan	BC212 BC213 BC214 O-226AA) BC214 BC212 cbc212 BC214 MOTOROLA	PDF
BC212 Abstract: BC212 data BC214 BC213 BC212B BC307 BC 212 BC 213 Motorola Text: BC212,B BC213 BC214 M AXIM UM RATINGS Symbol BC BC BC 212 213 214 VcEO -5 0 -3 0 -3 0 Vdc Collector-Base Voltage VcBO -6 0 -4 5 -4 5 Vdc Emitter-Base Voltage Vebo ic -5.0 Vdc -100 mAdc Total Device Dissipation @ T/^ = 25°C Derate above 25°C Pd 350 2.8 mW	OCR Scan	BC212 BC213 BC214 O-226AA) BC212 data BC212B BC307 BC 212 BC 213 Motorola	PDF
BC212C Abstract: Transistor BC212 BC212 Text: M C C X 1 TO-92 P lastic-E n cap su late T ran sisto rs BC212,B,C TRANSISTOR PNP FEAT U R E S Pcm: 0.35W (Tamb=25'C) V ( b r )c b o : - 6 0 V H M » 0 * o r a g e junction tem perature range Tj.Tsib: -55t: to + 150TC ELECTRICAL CHARACTERISTICS (Tamb=25°C u n le s s o th e rw is e	OCR Scan	BC212 150TC BC212B BC212C 100MHz Transistor BC212	PDF

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BC212* TRANSISTOR Search Results

BC212* TRANSISTOR Result Highlights (5)

BC212* TRANSISTOR Datasheets Context Search

BC212

bc212

BC212

BC212

equivalent of transistor bc212

equivalent of transistor bc212 bc 214

Untitled

equivalent of transistor bc212

Transistor BC212B

BC212

BC214C

SS9014

bc212b

Untitled

cbc212

bc213b

BC182 BC547

bc 945

Untitled

BCI82

bc558c

bc212

BC212

BC212C

**BC212* TRANSISTOR Result Highlights (5)**

**BC212* TRANSISTOR Datasheets Context Search**