BC182L

Abstract: IC DATE Code Identification bc 458 c 182l
Contextual Info: BC182L BC182L NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted

NPN Transistor BC548B

Abstract: transistor bc238b TP2369A t092 transistor pro-electron BCS48
Contextual Info: SPRAGUE/SEMICOND GROUP 14E D • T -U 'O I ÖS13ÖS0 □ □□ 47ei4 4 ■ SPRAGUE PROELECTRON T092 TRANSISTOR TYPES» PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA

NPN Transistor BC548B

Abstract: BC548 BC238B npn bc337-40 npn transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB

transistor 1094

Abstract: NPN SMALL SIGNAL TRANSISTOR 182LA TRANSISTOR BC 413 BC182LA bc182* transistor ic 4450
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES BC182LA SILICON NPN SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 50 V Min hFE . . . . 80 (Min) @ VCE = 5.0 V, IC = 100 mA 1 2 3 B C E 2 3 0.135 - 0.145 (3.429 - 3.683) 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)

BC182LB

Contextual Info: BC182LB BC182LB NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted

BC182L complementary

Abstract: BC212L BC182 BC212 8C132 BC182L 1C10
Contextual Info: BC182 BC182L BC212 BC212L //SJSJW/SStMfS/S&SSSS/SSSSr/fS/f'SS.'SSSSS/.'YS* D E S C R IP T IO N The B C 182, BC1S2L NPN & BC212, BC212L (PNP) ÍH are complementary silicon planar epitaxial transistors for use in AF small signal amplifiers and drivers, as well as

bc182l

Abstract: ic 10 209 transistor bc182l BC182l NPN transistor datasheet ic 901
Contextual Info: BC182L General Purpose Transistors Description: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistors. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BC182L NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10.

transistor bc182l

Abstract: bc182l transistor Common Base configuration all ic data bc182* transistor BC182LA BC182LB common base amplifier circuit designing 100MHZ
Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL AMPLIFIER TRANSISTORS BC182L, BC182LA, BC182LB TO-92 Plastic Package E CB General Purpose Amplifier Transistors ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

bc182l

Abstract: transistor bc182l
Contextual Info: BC182L BC182L NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: BC182LC Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V) I(C) Max. (A)200m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

transistor BC 182l

Abstract: bc182l bc182* transistor transistor bc182l
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES BC182L SILICON NPN SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 50 V Min hFE . . . . 80 (Min) @ VCE = 5.0 V, IC = 100 mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature -55 Degrees C to Operating Junction Temperature

BC182LB

Contextual Info: BC182LB BC182LB NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted

bc182c

Abstract: t092 BC182LC BC237B bc182l T0-92 bc186 BC212
Contextual Info: SEMELAB LTD 37E » Ö1331Ö7 0GGG032 4 IS nL B T ~ -^ 7 -o Reliability Option TVpe No. Package Polarity v CEO •c cont hF E @ V c e /Ic »T Pd BC182B BC182C BC182L BC182LA BC182LB NPN NPN NPN NPN NPN T092 T092 T092 T092 T092 50 50 50 50 50 0.2 0.2 0.2 0.2

182LB

Abstract: BC182LB TRANSISTOR BC 413 transistor 1094
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES BC182LB SILICON NPN SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 50 V Min hFE . . . . 80 (Min) @ VCE = 5.0 V, IC = 100 mA 1 2 3 B C E 2 3 0.135 - 0.145 (3.429 - 3.683) 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)

Contextual Info: BC182LB Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC182LA Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: BC182L Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

C184L

Abstract: BC184LC
Contextual Info: AL LE GR O MICROSYSTEMS INC =53 8 5 1 4 0 1 9 SPRA GU E. D • G50433Ö 0 0 0 3 5 T 3 T ■ ALGR S E M I C O N D S / ICS 93D 03593 J PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘D’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C V) (V) (V)

BC148

Abstract: BC148 hfe maximum BC186 BC181 BC147 BC157 BC190 BC206 BC149 bc182l
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY CASE M AXIM UM RATINGS Pd IC VCEO mW (mA) (V) HFE min V CE(sat) max IT Cob N.F. IC VCE max IC m in max max (mA) (V) (V) (mA) (M Hz) (MHz) (dB) 5 5 5 5 5 0.6 0.6 0.6 0.6 0.35 100 100 100 50 1 150

silect

Abstract: 2S503 N4060 bc182l 2N2483 2N3707 2N3709 2N929 2N930 2S501
Contextual Info: Silicon Transistors T ype C ase No. C o ^ <u M axim um R a tin g s at25°C amb. S P E C IA L C h a ra c te ris tic s FEATURES p <0 c a> o « O w fT h FE V CE SAT ' V CB V CE V EB V V V A M in. P.o, w Max. mA mA M in. 'c *B Max. M c/s mA mA V N PN Low Level

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

F B0347

Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
Contextual Info: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *

2SC3361-5

Abstract: 2SC181SL-O BFR41 L 2 KT3102 TEC9014B LOW-POWER SILICON NPN 2S0637 KT620A KT3102A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 - 1S - 20 2S 30 2SD601A 2S0637 2SC2000K 2SC2603 2SC147S KT620A HSE4S4 MPS-A09 KT3102A 2N4966 ~~~~~~ JE9214A TEC9014B MPSA09 MPSA09 MPSA09 2SC117S 2SC876 2SC876 ~~~~~ 2S01490 250789 BFT31 2NS310 TE01402A BFX68