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    BC-337 TRANSISTOR Search Results

    BC-337 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    BC-337 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c 337 25

    Abstract: 337 marking code bc337 c 33740 337-40 338 marking code bc 337 equivalent bc 170 c npn bc 337 NPN 337
    Text: NPN Silicon AF Transistors BC 337 BC 338 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 PNP ● 2 1 Type Marking Ordering Code BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338


    Original     		PDF Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3 c 337 25 337 marking code bc337 c 33740 337-40 338 marking code bc 337 equivalent bc 170 c npn bc 337 NPN 337

    2sc1815 equivalent

    Abstract: 2SC1312 equivalent of transistor 8050 equivalent of transistor 9014 NPN 2SC1740 equivalent transistor bc 549 equivalent transistor 2sc1312 transistor bc 549 BC337 8050
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC1214 HN / BC 337 / 8050 2SC1478 HN / BC 548 / 9014 2SC1707 HN / BC 548 / 9014 2SC1219 HN / BC 337 / 8050


    Original     		PDF To-92 2SC1214 2SC1478 2SC1707 2SC1219 2SC1537 2SC1734 2SC1220 2SC1539 2SC1736 2sc1815 equivalent 2SC1312 equivalent of transistor 8050 equivalent of transistor 9014 NPN 2SC1740 equivalent transistor bc 549 equivalent transistor 2sc1312 transistor bc 549 BC337 8050

    transistors BC 327

    Abstract: BC328 327-40 C311 IC 32725 npn bc 337 BC327 BC 32740 C312 BC327-40
    Text: PNP Silicon AF Transistors BC 327 BC 328 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 337, BC 338 NPN ● 2 3 Type Marking Ordering Code BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328


    Original     		PDF Q62702-C311 Q62702-C311-V3 Q62702-C311-V4 Q62702-C311-V2 Q62702-C312 Q62702-C312-V3 Q62702-C312-V4 Q62702-C312-V2 transistors BC 327 BC328 327-40 C311 IC 32725 npn bc 337 BC327 BC 32740 C312 BC327-40

    C 337-40

    Abstract: c 337 25 337-40 c 33740 transistors BC 293 327-40 337 marking code BC 337 BC337 NPN 337
    Text: PNP Silicon AF Transistors BC 327 BC 328 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 337, BC 338 NPN ● 2 3 Type Marking Ordering Code BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328


    Original     		PDF Q62702-C311 Q62702-C311-V3 Q62702-C311-V4 Q62702-C311-V2 Q62702-C312 Q62702-C312-V3 Q62702-C312-V4 Q62702-C312-V2 Collector-ba20 C 337-40 c 337 25 337-40 c 33740 transistors BC 293 327-40 337 marking code BC 337 BC337 NPN 337

    C 337-25

    Abstract: C 33725 12 v transistors 337 c 337 25 npn bc 337 CBC337 transistors bc 337 OF IC 337 NPN 337 BC-338
    Text: BC 337 / BC 338 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0


    Original     		PDF UL94V-0 BC337-40 BC338-40 C 337-25 C 33725 12 v transistors 337 c 337 25 npn bc 337 CBC337 transistors bc 337 OF IC 337 NPN 337 BC-338

    OF IC 337

    Abstract: c 337 25 cbc338 CBC337 NPN 337 transistor BC 338 BC 337 npn bc 337 12 v transistors 337 basisstrom
    Text: BC 337 / BC 338 NPN Silicon Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert


    Original     		PDF UL94V-0 OF IC 337 c 337 25 cbc338 CBC337 NPN 337 transistor BC 338 BC 337 npn bc 337 12 v transistors 337 basisstrom

    NPN 337

    Abstract: No abstract text available
    Text: BC 337 / BC 338 NPN Silicon Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert


    Original     		PDF UL94V-0 tter\Transistoren\bc337-338 NPN 337

    pin configuration PNP transistor BC327

    Abstract: BC337 pnp transistor BC327 BC337 noise figure BC327 noise figure BC 114 transistor NPN 337 BC338/BC328 BC327 NPN transistor configuration TRANSISTOR BC 135 BC328 NPN
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company BC 337 BC327 BC337A BC327A BC338 BC328 SILICON PLANAR EPITAXIAL TRANSISTORS NPN PNP TO-92 Plastic Package C BE Transistors For Use in Driver And Output Stages of Audio Amplifiers


    Original     		PDF ISO/TS16949 BC327 BC337A BC327A BC338 BC328 BC337 BC337A pin configuration PNP transistor BC327 BC337 pnp transistor BC327 BC337 noise figure BC327 noise figure BC 114 transistor NPN 337 BC338/BC328 BC327 NPN transistor configuration TRANSISTOR BC 135 BC328 NPN

    pin configuration PNP transistor BC327

    Abstract: BC327 BC337 noise figure BC338/BC328 tr bc 337 BC337 pnp transistor BC337A BC327 NPN transistor configuration BC327 pin out bc-337 TRANSISTOR tr bc 337 datasheet
    Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer BC 337 BC327 BC337A BC327A BC338 BC328 SILICON PLANAR EPITAXIAL TRANSISTORS NPN PNP TO-92 Plastic Package C BE Transistors For Use in Driver And Output Stages of Audio Amplifiers


    Original     		PDF QSC/L-000019 BC327 BC337A BC327A BC338 BC328 BC337 BC337A pin configuration PNP transistor BC327 BC327 BC337 noise figure BC338/BC328 tr bc 337 BC337 pnp transistor BC327 NPN transistor configuration BC327 pin out bc-337 TRANSISTOR tr bc 337 datasheet

    Transistor 337

    Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor
    Text: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier


    OCR Scan     		PDF

    bc 945

    Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
    Text: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549


    OCR Scan     		PDF O-92-Gehà BC238 BC309 O-126 OT-32. O-220-A. OT-78 T0-220-B. bc 945 BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135

    c33725

    Abstract: c33740 Bc337
    Text: SIEMENS NPN Silicon AF Transistors BC 337 BC 338 • High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 327, BC 328 PNP Type Marking Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1


    OCR Scan     		PDF Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3 BC337 A235b05 c33725 c33740 Bc337

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon AF Transistors • • • • BC 327 BC 328 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 337, BC 338 NPN Type Marking Ordering Code Q62702-C311 Q62702-C311-V3 Q62702-C311-V4


    OCR Scan     		PDF Q62702-C311 Q62702-C311-V3 Q62702-C311-V4 Q62702-C311-V2 Q62702-C312 Q62702-C312-V3 Q62702-C312-V4 Q62702-C312-V2 A235b05 E35b05

    Transistoren DDR

    Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
    Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60


    OCR Scan     		PDF SCE237 SCE238 SCE239 SCE308 Transistoren DDR vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369

    BC337

    Abstract: BC338 BC327 BC328 BC337 hfe PNP BC327
    Text: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS CASE TO-92F THE BC337 » BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,


    OCR Scan     		PDF BC337, BC338 BC327, BC328 O-92F BC337 625mW BC327 BC337 hfe PNP BC327

    BC358

    Abstract: BC327 BC328 BC337 BC338
    Text: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS 1 . CASE TO-92F THE BC337» BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS: WELL AS FOR UNIVERSAL APPLICATIONS. THE BC357, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,


    OCR Scan     		PDF BC337, BC338 BC327, BC328 O-92F BC337 625mW BC358 BC327

    TRANSISTOR 237b

    Abstract: TRANSISTOR "BC 258" transistor BC 56 Transistor BC 308C bc 238c transistor 237B TRANSISTOR BC Transistors 257b TRANSISTOR BC 307c transistor BC 307A TRANSISTOR 308B
    Text: BHARAT ELEK/SE niC OND DI 4?E D • 143S3TÛ □□□□OCH 2Tb ■ VCE Si Device No 37. 38. 39. 40. 41. BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 V h FE VCEO VCBO Volts min Volts mm Volts min at bias mtn /max 45 25 25 25 25 50 30 30 30 30 5 5 5 5 5


    OCR Scan     		PDF 143S3TÃ TRANSISTOR 237b TRANSISTOR "BC 258" transistor BC 56 Transistor BC 308C bc 238c transistor 237B TRANSISTOR BC Transistors 257b TRANSISTOR BC 307c transistor BC 307A TRANSISTOR 308B

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 338 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage


    OCR Scan     		PDF BC327/328 337/BC BC327 BC328

    Untitled

    Abstract: No abstract text available
    Text: BC 337 • BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS 11 _ 1 CASE TO-92F THE BC337» BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS; WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,


    OCR Scan     		PDF BC337» BC338 BC337, BC327, BC328 O-92F BC337 625mW

    BC337

    Abstract: TRANSISTOR BC338 bc337 fairchild TRANSISTOR bc337 40 BC-337 bc337 transistor BC338-25 BC337 NPN transistor NPN TRANSISTOR BC337 40 BC337 hfe
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 328 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage


    OCR Scan     		PDF BC337/338 BC337/BC328 BC337 BC338 BC337 TRANSISTOR BC338 bc337 fairchild TRANSISTOR bc337 40 BC-337 bc337 transistor BC338-25 BC337 NPN transistor NPN TRANSISTOR BC337 40 BC337 hfe

    TRANSISTOR BC 327

    Abstract: h21e bc 327 complementary pair transistor BC 337 transistor AS 337 transistor BC 327 40 transistor bc 630 TRANSISTOR BC 328 BC327 transistor 327
    Text: *B C 3 2 7 BC328 NP SILICON TRANSISTORS, EPITAXIAL PLANAR R A N S IS T O R S PNP S IL IC IU M , P L A N A R E P IT A X IA U X ompl. of BC 337 and BC 338 îf; Preferred device Dispositif recommandé he BC 327 and BC 328 transistors are intended fo r a ide variety o f medium power AF am plifier and switlin g application ; they are particulary useful as


    OCR Scan     		PDF BC327 BC328 TRANSISTOR BC 327 h21e bc 327 complementary pair transistor BC 337 transistor AS 337 transistor BC 327 40 transistor bc 630 TRANSISTOR BC 328 transistor 327

    transistor bc 102

    Abstract: bc 103 transistor Transistor 337 transistor bc 337 c 337 25 transistor 338 transistor BC 338 bc 2001 transistor BC 170 transistor BC 337
    Text: HN / BC 337/338 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40, according to their DC current gain. As


    OCR Scan     		PDF BC327 BC328 103mA transistor bc 102 bc 103 transistor Transistor 337 transistor bc 337 c 337 25 transistor 338 transistor BC 338 bc 2001 transistor BC 170 transistor BC 337

    bc337

    Abstract: bc338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840
    Text: MCC TO-92 Plastic-Encapsulate Transistors ^ BC337 BC338 ,-16,-25,-40 TRANSISTOR(NPN) FEATURES Pcm: 0.625W (Tamb=25°C) Icm: 0 .8 A ÍIIÍÍÉ>ji^fe>ba»a voltage Vcbo: BC 337 : 50V B C 338 : 30V storage junction temperature range Tj,Tstg: -55'C to + 150°C


    OCR Scan     		PDF BC337 BC338) BC338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840

    BC413B

    Abstract: BC413C BC414B BC414C BC337-25 BC337-40 BC337A BC338 BC338-16 BC338-25
    Text: TO-92 Plastic Package Transistors NPN _ _ Maxim um Ratings Type No. BC 337-25 ^CEO ^EBO PD (V) Min (V) Min (V) Min (W) 45 5 (A) ^CB 'c e s ^CE (V) (HA) Max @ (V) Max @Tc=25°c 0 .625 'cBO <mA) 0.5 0.1 20 »FE Min BC337A 50 60 45 60 5 5 0.625 0.625 0.5


    OCR Scan     		PDF BC337-25 O-92-4 BC337-40 BC337A BC338 BC414C BC413B BC413C BC414B BC338-16 BC338-25