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    BC 650 NPN Search Results

    BC 650 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    BC 650 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H12E

    Abstract: No abstract text available
    Text: BC 857BL3, BC 858BL3 PNP Silicon AF Transistors Preliminary data  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage 1  Complementary types: BC 847BL3, 2 BC 848BL3 NPN Type Marking Pin Configuration


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    PDF 857BL3, 858BL3 847BL3, 848BL3 857BL3 H12E

    C2335

    Abstract: Q62702-C2335 bc 3as 856W C2298 bc 750 C2292 C2303 marking 2 AW marking code aw
    Text: PNP Silicon AF Transistors BC 856W . BC 860W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W NPN


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    PDF Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300 C2335 Q62702-C2335 bc 3as 856W C2298 bc 750 C2292 C2303 marking 2 AW marking code aw

    C1507

    Abstract: BC856 bc857 bc856b b 857 bc npn sot-23 marking 3Fs h11E Q62702-C1851 Q62702-C1887
    Text: PNP Silicon AF Transistors BC 856 . BC 860 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 NPN


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    PDF Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 C1507 BC856 bc857 bc856b b 857 bc npn sot-23 marking 3Fs h11E Q62702-C1851 Q62702-C1887

    BC sot23

    Abstract: sot-23 marking 3Fs 21E sot bc 3as 856B 858C 860C 857-C 1B SOT-23
    Text: BC 856 . BC 860 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846, BC 847, BC 848 2 BC 849, BC 850 NPN


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    PDF OT-23 Sep-28-1999 120Hz BC sot23 sot-23 marking 3Fs 21E sot bc 3as 856B 858C 860C 857-C 1B SOT-23

    C1507

    Abstract: b 857 Q62702-C1741 sot-23 marking 1Fs sot-23 marking 3Fs 1Bs sot-23 bc 750 sot-23 MARKING CODE 1Gs C1741 C1761
    Text: NPN Silicon AF Transistors ● ● ● ● ● BC 846 . BC 850 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 PNP


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    PDF Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 C1507 b 857 Q62702-C1741 sot-23 marking 1Fs sot-23 marking 3Fs 1Bs sot-23 bc 750 sot-23 MARKING CODE 1Gs C1741 C1761

    BC850

    Abstract: BC856 BC856A BC856B BC857A BC860 BC846 BC847 BC848 BC849
    Text: BC856.BC860 PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type


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    PDF BC856. BC860 BC846, BC847, BC848 BC849, BC850 BC856A BC856B BC857A BC850 BC856 BC856A BC856B BC857A BC860 BC846 BC847 BC848 BC849

    BC846

    Abstract: BC847 BC848 BC849 BC850 BC856 BC856A BC856B BC857A BC860
    Text: BC856.BC860 PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type


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    PDF BC856. BC860 BC846, BC847, BC848 BC849, BC850 BC856A BC856B BC857A BC846 BC847 BC848 BC849 BC850 BC856 BC856A BC856B BC857A BC860

    BF860

    Abstract: TSFP-3 BC849BF
    Text: BC857BF.BC860BF PNP Silicon AF Transistor • For AF input stages and driver applications 2 3 • High current gain • Low collector-emitter saturation voltage 1 • Low noise between 30 Hz and 15 kHz • Complementary types: BC847BF, BC848BF BC849BF, BC850BF NPN


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    PDF BC857BF. BC860BF BC847BF, BC848BF BC849BF, BC850BF BC857BF BC858BF BC859BF BF860 TSFP-3 BC849BF

    H12E

    Abstract: 4Gs SOT23 3JS 1.5-R bc857b infineon 3ls sot23
    Text: BC856.BC860 PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type


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    PDF BC856. BC860 BC846, BC847, BC848 BC849, BC850 VPS05161 BC856A BC856B H12E 4Gs SOT23 3JS 1.5-R bc857b infineon 3ls sot23

    transistor bc 146

    Abstract: transistor bc 570 transistor bc 630
    Text: , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BC146 MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR GENERAL DESCRIPTION The BC 146 isaNPNsilicon planar epitaxial transistor in miniature plastic package designed for hearing


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    PDF BC146 BC146G transistor bc 146 transistor bc 570 transistor bc 630

    BC856B E6327

    Abstract: BC846 Infineon BC856-BC860 BC857 st DIN 6784 power 22E BC856B BC857A BC860 BC846
    Text: BC856.BC860 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN


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    PDF BC856. BC860 BC846, BC847, BC848 BC849, BC850 BC856A BC856B BC857A BC856B E6327 BC846 Infineon BC856-BC860 BC857 st DIN 6784 power 22E BC856B BC857A BC860 BC846

    BF860

    Abstract: BC847BF BC848BF BC857BF BC858BF BC859BF BC860BF
    Text: BC857BF.BC860BF PNP Silicon AF Transistor • For AF input stages and driver applications 2 3 • High current gain • Low collector-emitter saturation voltage 1 • Low noise between 30 Hz and 15 kHz • Complementary types: BC847BF, BC848BF BC849BF, BC850BF NPN


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    PDF BC857BF. BC860BF BC847BF, BC848BF BC849BF, BC850BF BC857BF BC858BF BC859BF BF860 BC847BF BC848BF BC857BF BC858BF BC859BF BC860BF

    BC846W

    Abstract: BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W
    Text: BC856W.BC860W PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN


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    PDF BC856W. BC860W BC846W, BC847W, BC848W BC849W, BC850W VSO05561 BC856AW OT323 BC846W BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W

    C2310

    Abstract: transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW
    Text: NPN Silicon AF Transistor BC 846 W . BC 850 W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W,


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    PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 C2310 transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW

    bc 301 transistor

    Abstract: bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56
    Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A < 0 ,2 A v C E O ^ \^ PNP PNP


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    PDF BSX52 BSW21 BSW22 BSX51 BSW22 2N706 bc 301 transistor bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56

    BC211

    Abstract: BC 650 NPN BSV16 2N706 BFY50 BFY51 BFY52 BSX45 BSX46 BSY51
    Text: general purpose, amplification, switching - metal case commutation, am plification, usage général boîtier métal Type NPN M axim um ratings PNP p to t C haracteristics a t 25°C VcEO / •»21E VCE satl / / «e / 50 50 50 50 25 25 30 30 850 850 650 650


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    PDF BC211 2N706 BC211 BC 650 NPN BSV16 BFY50 BFY51 BFY52 BSX45 BSX46 BSY51

    bc 471

    Abstract: IC 415 BC 241 bc 415 c BC415 BC416C bc 188 BC415B Bc 188 pnp IR LFN
    Text: SIE T> SIEM ENS m 023SbGS □□ms'îe S3B « s i e g SIEMENS AKTIENGESELLSCHAF PNP Sil icon AF Transistors • • • • BC 415 BC 416 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 413, BC 414 NPN


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    PDF fi23SbGS Q62702-C377 Q62702-C377-V1 Q62702-C377-V2 Q62702-C377-V3 Q62702-C378 Q62702-C378-V1 Q62702-C378-V2 Q62702-C378-V3 fl535b05 bc 471 IC 415 BC 241 bc 415 c BC415 BC416C bc 188 BC415B Bc 188 pnp IR LFN

    BC308

    Abstract: bc307 siemens BC307 bc307a BC 309 BC307B Q62702-C285 BC 307 BC309C bc 374
    Text: SIEMENS 51E D • flE35bD5 004155b 5T1 « S I E G SIEMENS AKTIENGESELLSCHAF " p 2 -*n -z i PNP Silicon AF Transistors BC 307 . BC 309 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 237, BC 238, BC 239 NPN


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    PDF flE35bD5 004155b Q62702-C703 Q62702-C283 Q62702-C324 Q62702-C704 Q62702-C285 Q62702-C286 Q62702-C393 Q62702-C705 BC308 bc307 siemens BC307 bc307a BC 309 BC307B BC 307 BC309C bc 374

    EM 257

    Abstract: BC257 bc257 siemens BC257B BC258 A235L TR BC BC258A BC258B siemens 1q
    Text: SIE D SIEMENS • öE3SbGS GDMlSHfi 425 H S I E 6 SIEMENS AKTIENGESELLSCHAF T - 2 S \- Z \ PNP Silicon AF Transistors BC 257 . BC 259 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 167, BC 168, BC 1 6 9 NPN


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    PDF 853SbDS Q62702-C700 Q62702-C184 Q62702-C206 Q62702-C701 Q62702-C187 Q62702-C188 Q62702-C438 Q62702-C702 Q62702-C192 EM 257 BC257 bc257 siemens BC257B BC258 A235L TR BC BC258A BC258B siemens 1q

    l22e

    Abstract: BC213 BC212 BC213B BC212a BC212 Siemens bc 212 bc212b 213 T A212B
    Text: SIE D • SIEM ENS flE35b05 0D4153E Obfl M S I E 6 SI EM EN S A K T I E N G E S E L L S C H A F " P 2 ñ 'Z - l PNP Silicon AF Transistors BC212 BC 213 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 182, BC 183 NPN


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    PDF flE35b05 0D4153E BC212 Q62702-C242 Q62702-C374-V1 Q62702-C374-V2 Q62702-C564 Q62702-C1159 Q62702-C1160 Q62702-C1158 l22e BC213 BC213B BC212a BC212 Siemens bc 212 bc212b 213 T A212B

    bc 212 equivalent

    Abstract: siemens CIB
    Text: PNP Silicon AF Transistors • • • • • For AF input stages and driver applications High cu rre n t gain Low c o lle c to r-e m itte r saturation voltage Lo w noise betw een 30 Hz and 15 kHz C om plem entary typ e s: BC 846, BC 847, BC 849, BC 850 NPN


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    bc 141

    Abstract: BC160
    Text: BC 160 BC 161 SI LI CON PLANAR NPN GENERAL PURPOSE TRANSISTORS The BC160 and BC 161 are silico n planar epitaxial PNP transistors in TO -39 metal case. They are p a rticularly designed fo r audio am p lifie rs and sw itching applications up to 1 A. The com plem entary NPN types are the BC 140 and EIC141.


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    PDF BC160 bc 141

    bc1417

    Abstract: BC140-BC141 BC 545 bc 141 bc140 tfk 545 bc 140 BC140B BC141 S45C
    Text: Silizium- NPN-Epitaxial-Planar-NF-T ransistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Verstärker und Schalter A p p lic a tio n s : AF am plifiers and sw itches Besondere Merkmale: F eatures: • Verlustleistung 3,7 W • Power dissipation 3,7 W


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    bc617

    Abstract: No abstract text available
    Text: S IE M E N S NPN Silicon Darlington Transistors BC 617 BC 618 • High current gain • High collector current Type Marking Ordering Code BC 617 BC 618 — Q62702-C1137 Q62702-C1138 Pin Co nfigurat ion 1 2 3 C B .E Package1 TO-92 Maximum Ratings Parameter


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    PDF Q62702-C1137 Q62702-C1138 71utoff CHPOOI87 fi23SbOS D120531 235b05 G12D532 fl235b05 bc617