BC 2001 TRANSISTOR Search Results

BC 2001 TRANSISTOR Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

BC 2001 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor BC 458 Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308 Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage	Original	PDF	BC307/308/309 BC309 BC307 BC308/309 BC308 BC308ABU transistor BC 458 Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309
TRANSISTOR BC 560c Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560 Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	PDF	BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 TRANSISTOR BC 560c transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
BC546 "cross reference" Abstract: transistor BC 458 Transistor NPN BC 549B bc549 Cross Reference BC548 cross reference bc550 BC547ATA Amplifier with transistor BC549 bc549 of transistor BC 548 Text: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	PDF	BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 BC546 "cross reference" transistor BC 458 Transistor NPN BC 549B bc549 Cross Reference BC548 cross reference bc550 BC547ATA Amplifier with transistor BC549 bc549 of transistor BC 548
TRANSISTOR 237b Abstract: BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter	Original	PDF	BC237/238/239 BC239 BC237 BC238/239 TRANSISTOR 237b BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b
bcx56 Abstract: BCX54 Bcx56-16 Text: Central BCX54 BCX55 BCX56 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount	Original	PDF	BCX54 BCX55 BCX56 BCX54, BCX55, OT-89 Bcx56-16
transistors BC 487 Abstract: No abstract text available Text: BC487, BC487B High Current Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 60 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current – Continuous	Original	PDF	BC487, BC487B transistors BC 487
bc487 Abstract: transistors BC 487 bc487b Text: BC487, BC487B High Current Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 60 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Collector Current − Continuous	Original	PDF	BC487, BC487B bc487 transistors BC 487
marking B22 sot-23 Abstract: bc 2001 transistor BCW61A BCW61B BCW61C BCW61D KST5086 Text: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO	Original	PDF	BCW61A/B/C/D OT-23 KST5086 marking B22 sot-23 bc 2001 transistor BCW61A BCW61B BCW61C BCW61D
BCX56 Abstract: BCX54 BCX54-10 bc 104 npn transistor BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56-10 BCX56-16 Text: Central BCX54 BCX55 BCX56 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount	Original	PDF	BCX54 BCX55 BCX56 BCX54, BCX55, BCX56 OT-89 BCX54 BCX54-10 bc 104 npn transistor BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56-10 BCX56-16
BC559 Abstract: transistor BC 458 BC 458 transistor BC560 ic 558 TRANSISTOR bc560 BC546 BC556 BC 557 PNP TRANSISTOR Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	PDF	BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 BC559 transistor BC 458 BC 458 transistor BC560 ic 558 TRANSISTOR bc560 BC546 BC556 BC 557 PNP TRANSISTOR
thermistor TH101 Abstract: pin diagram of ic 7493 240vac to 12vdc rectifier circuit AMPLIFIER U201 CR25 resistor 120vac to 12vdc schematic diagram 120v AC to 12V dc transformer CNY17-2Z CR102 zener diode DE C308 Text: Application Note AN 139 Designing Power Supplies Using Xicor’s XDCP Mixed Signal Products By Bill Slack Abstract I. The objective of this Application Note is to illustrate the use of a Xicor XDCP Digitally Controlled Potentiometer in the design of switching power supply. A	Original	PDF	X24C16, thermistor TH101 pin diagram of ic 7493 240vac to 12vdc rectifier circuit AMPLIFIER U201 CR25 resistor 120vac to 12vdc schematic diagram 120v AC to 12V dc transformer CNY17-2Z CR102 zener diode DE C308
BCX56 Abstract: BCX54 BCX51 BCX52 BCX53 BCX54-10 BCX54-16 BCX55 BCX55-10 BCX55-16 Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D109 BCX54; BCX55; BCX56 NPN medium power transistors Product specification Supersedes data of 1999 Apr 19 2001 Oct 10 Philips Semiconductors Product specification NPN medium power transistors BCX54; BCX55; BCX56	Original	PDF	M3D109 BCX54; BCX55; BCX56 BCX51, BCX52 BCX53. BCX56 BCX54 BCX51 BCX53 BCX54-10 BCX54-16 BCX55 BCX55-10 BCX55-16
bc487 Abstract: bc487b Text: BC487, BC487B High Current Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 60 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current – Continuous	Original	PDF	BC487, BC487B r14525 BC487/D bc487
transistors BC 487 Abstract: 327A-16 C 337-40 transistors BC 337a c 33740 tr bc 337 C 337-25 BC 327/25 transistor transistor BC 321 C 32725 Text: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B	OCR Scan	PDF	CB-76 BC317P. transistors BC 487 327A-16 C 337-40 transistors BC 337a c 33740 tr bc 337 C 337-25 BC 327/25 transistor transistor BC 321 C 32725

transistor bc 102 Abstract: TRANSISTOR BC 327 BC327 transistor bc 103 transistor BC 328 bc 103 transistor BC337 BC338 BC 170 transistor BC 2001 transistor Text: HN / BC 327/328 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-drlver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40, according to their DC current gain. As	OCR Scan	PDF	BC337 BC338 103mA 20MHz transistor bc 102 TRANSISTOR BC 327 BC327 transistor bc 103 transistor BC 328 bc 103 transistor BC 170 transistor BC 2001 transistor
BC183A Abstract: BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B Text: general purpose transistors — plastic case tra n s is to rs usage général — b oîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maximum ratings Type PNP Ptot / lc h21E VcEO C22b VCE sat / <C/»B FB Case 1KHz * min BC 174 BC 174 A BC 174 B	OCR Scan	PDF	CB-76 BC317P. BC183A BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B
BC 546 BP Abstract: bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740 Text: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B	OCR Scan	PDF	CB-76 BC317P. BC 546 BP bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740
transistor bc 102 Abstract: bc 103 transistor Transistor 337 transistor bc 337 c 337 25 transistor 338 transistor BC 338 bc 2001 transistor BC 170 transistor BC 337 Text: HN / BC 337/338 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40, according to their DC current gain. As	OCR Scan	PDF	BC327 BC328 103mA transistor bc 102 bc 103 transistor Transistor 337 transistor bc 337 c 337 25 transistor 338 transistor BC 338 bc 2001 transistor BC 170 transistor BC 337
Untitled Abstract: No abstract text available Text: BC337, BC338 Small Signal Transistors NPN TO-92 _ FEATURES_ NPN Silicon Epitaxial Planar Transistors for switching and am plifier applications. Especially suitable for AF-driver stages and low power output stages. .098 ( 2 . 5 ) *	OCR Scan	PDF	BC337, BC338 BC328
100az Abstract: BCW65A BCW66F BCW66G BCW66H BCW68F BCW68G BCW68H FMMTA05 FMMTA06 Text: SOT 23 TRANSISTORS NPN MEDIUM POWER RATINGS AND CHARACTERISTICS at 25°C ambient temperature. Type FM M TA06 V c es Volts VcEO Volts 80 80 lc mA 500 Ptot* mW 350 h FE VcE {sat min/max at Ic /V c e max at Ic /Ib m A/Volts Volts mA 5 0 /- 10/1 Noise Figure at	OCR Scan	PDF	FMMTA06 FMMTA56 BCW66F BCW68F BCW66G BCW68G BCW66H BCW68H FMMTA05 FMMTA55 100az BCW65A BCW68F BCW68G BCW68H
I3C327 Abstract: BC327 BC328 cbc327 103 ma BC327/BC328 transistor bc 102 BC337 BC338 BC 160 Text: BC327, BC328 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. These types are also available subdivided into three groups -1 6 , - 2 5 and - 4 0 , according to their DC current gain. As com	OCR Scan	PDF	BC327, BC328 BC337 BC338 BC327 BC327 BC328 I3C327 cbc327 103 ma BC327/BC328 transistor bc 102 BC 160
BC253 Abstract: BC251 BC252 BC 251 BC256 transistor bc 102 BC309 BC307 BC308 Text: BC251 . . BC307 PNP Silicon Epitaxial Planar Transistors for switching and am plifier applications The transistors are subdivided into three groups A, B and C according to their current gain. BC256 is available in groups A and B only. BC253 and BC309 are low noise types.	OCR Scan	PDF	BC251 BC307 BC256 BC253 BC309 BC251, BC307 BC252, BC253, BC251 BC252 BC 251 transistor bc 102 BC308
BC107 characteristic Abstract: BC107 BC109 BC108 characteristic BC109 characteristic BC108 bc109 gain BC109 am Transistor BC107 Transistor BC109 Text: BC107, BC108, BC109 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications The transistors are subdivided into three groups A, B and C according to their current gain. Type BC107 is available in groups A and B, type BC108 in groups A, B and C, and type	OCR Scan	PDF	BC107, BC108, BC109 BC107 BC108 BC109 BC107 characteristic BC108 characteristic BC109 characteristic bc109 gain BC109 am Transistor BC107 Transistor BC109
BC173 Abstract: BC171 BC174 bc172 BC238 BC239 BC238 h parameter transistor bc171 transistor bc237 bc337 BC237 Text: BC171 . . BC237 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications The transistors are subdivided into three groups, A, B an C according to their current gain. Types BC171, BC174 and BC237 are available in groups A and B, types BC172 and	OCR Scan	PDF	BC171 BC237 BC171, BC174 BC237 BC172 BC238 BC173 BC239 BC171 BC238 h parameter transistor bc171 transistor bc237 bc337

BC 2001 TRANSISTOR Search Results

BC 2001 TRANSISTOR Result Highlights (6)

BC 2001 TRANSISTOR Datasheets Context Search

transistor BC 458

TRANSISTOR BC 560c

BC546 "cross reference"

TRANSISTOR 237b

bcx56

transistors BC 487

bc487

marking B22 sot-23

BCX56

BC559

thermistor TH101

BCX56

bc487

transistors BC 487

transistor bc 102

BC183A

BC 546 BP

transistor bc 102

Untitled

100az

I3C327

BC253

BC107 characteristic

BC173