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    BC 187 TRANSISTOR Search Results

    BC 187 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC 187 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TRANSISTOR 2sC 6090 EQUIVALENT

    Abstract: transistor c1364 transistor c2053 C1364 transistor TRANSISTOR C3068 pcc pw3 BC 5478 transistor nec c3157 mallory vibrator WM-64PKT
    Text: SECTION REFERENCE INDEX Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . . . . . . . . . 20-284 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . . . . . 285-666 Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 667-701


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    IN9765ASZ-0 423-1020-ND 423-1019-ND 423-1027-ND MD6030NSC-0 MD6030NSZ-0 MD9752NSZ-0 423-1022-ND 423-1025-ND MD6052USZ-1 TRANSISTOR 2sC 6090 EQUIVALENT transistor c1364 transistor c2053 C1364 transistor TRANSISTOR C3068 pcc pw3 BC 5478 transistor nec c3157 mallory vibrator WM-64PKT PDF

    BC 557 transistor

    Abstract: uPD750004 uPD750006 uPD750008 uPD75008 uPD75P0016 uPD75008GB IEI-1209 uPD75P008CU U10740E 25p20
    Text: USER'S MANUAL µPD750008 4 BIT SINGLE-CHIP MICROCOMPUTER µPD750004 µPD750006 µPD750008 µPD75P0016 1995 Document No. U10740EJ2V0UM00 2nd edition (Previous No. IEU-1421) Date Published April 1996 P Printed in Japan GENERAL 1 PIN FUNCTIONS 2 FEATURES OF THE ARCHITECTURE AND MEMORY MAP


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    PD750008 PD750004 PD750006 PD75P0016 U10740EJ2V0UM00 IEU-1421) PD75008, PD750008, BC 557 transistor uPD750004 uPD750006 uPD750008 uPD75008 uPD75P0016 uPD75008GB IEI-1209 uPD75P008CU U10740E 25p20 PDF

    750008

    Abstract: U10740E TRANSISTOR BC 141 uPD750004 uPD750006 uPD750008 uPD75008 uPD75P0016 uPD75P0016CU transistor BC 247
    Text: USER'S MANUAL µPD750008 4 BIT SINGLE-CHIP MICROCOMPUTER µPD750004 µPD750006 µPD750008 µPD75P0016 1995 Document No. U10740EJ2V0UM00 2nd edition (Previous No. IEU-1421) Date Published April 1996 P Printed in Japan GENERAL 1 PIN FUNCTIONS 2 FEATURES OF THE ARCHITECTURE AND MEMORY MAP


    Original
    PD750008 PD750004 PD750006 PD75P0016 U10740EJ2V0UM00 IEU-1421) PD75008, PD750008, 750008 U10740E TRANSISTOR BC 141 uPD750004 uPD750006 uPD750008 uPD75008 uPD75P0016 uPD75P0016CU transistor BC 247 PDF

    TRANSISTOR BC 208

    Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
    Text: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2


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    lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187 PDF

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N PDF

    BC211

    Abstract: TR BC BC211A BC313A bc 313 iriver BC313 h21e deflexion NPN pnp MATCHED PAIRS
    Text: *B C 211 BC 211 A NPN SILICON TRANSISTORS, PLANAR TRANSISTORS NPN SILICIUM, PLANAR H5 Preferred device Dispositif recommandé The BC 211 and BC 211 A are intended for a iride variety of medium power medium speed witching and AF amplifier application ; they


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    BC211

    Abstract: BC313 BC 313 bc 374 BC313A NPN pnp MATCHED PAIRS h21e IT 313 TR BC transistor DA 313
    Text: *B C 313 BC 313 A PNP SILICON TRANSISTORS, PLANAR TRANSISTORS PNP S ILIC IU M , P LAN A R îfc Preferred device Dispositif recommandé The BC 313 and BC 313 A are intended for a wide variety of medium power medium speed switching and AF amplifier application ; they


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    Transistoren DDR

    Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
    Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60


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    SCE237 SCE238 SCE239 SCE308 Transistoren DDR vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369 PDF

    F21E

    Abstract: transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp
    Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,


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    Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 F21E transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp PDF

    SSY20

    Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
    Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3


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    Untitled

    Abstract: No abstract text available
    Text: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P tra n s is to rs in a p la s tic S O T -2 3 package p r im a r ily in te n d e d f o r lo w -n o is e in p u t stages in tap e re corde rs, h i-fi a m p lifie rs and o th e r a u d io fre q u e n c y e q u ip m e n t in th ic k and th in - film h y b rid c irc u its .


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    BC859 BC860 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    BF 331 TRANSISTORS

    Abstract: transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c
    Text: TELEFUNKEN ELECTRONIC Ö1C T> • Ö ^ O O R b 0005330 2 ■ ALlSG BFX89 TiHitPüUNliKiM] electronic T -sr-sr Creativo Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General, up to the GHz range Feature»: • Power gain 7 dB Dimensions In mm


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    BFX89 569-GS BF 331 TRANSISTORS transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c PDF

    N2222

    Abstract: SL100B pnp SL100 SK100B SL100 npn NPN pnp MATCHED PAIRS 2n2905A 2N2219A BC188B SL100A N2222A NPN SL100
    Text: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B


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    Tj-25 Ta-26Â Tc-25 /2N3701 T0-18 N4030 2N4032 N4033 300jus O-105 N2222 SL100B pnp SL100 SK100B SL100 npn NPN pnp MATCHED PAIRS 2n2905A 2N2219A BC188B SL100A N2222A NPN SL100 PDF

    SL100B

    Abstract: SL100 TRANSISTORS SL100A SL100 npn NPN SL100 BF107 SL100h N4030 N2222A sg103
    Text: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B


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    Tj-25 Ta-26Â To-25 /2N3701 T0-18 N4030 SN4031 2N4032 /2N4033 O-105 SL100B SL100 TRANSISTORS SL100A SL100 npn NPN SL100 BF107 SL100h N2222A sg103 PDF

    SL100B

    Abstract: SL100A BF107 SL100 npn N2222A 2N4032 N4030 SK100B SK102 SL100
    Text: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B


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    Tj-25 Ta-26Â To-25 /2N3701 N4030 SN4031 2N4032 /2N4033 O-220 O-106 SL100B SL100A BF107 SL100 npn N2222A SK100B SK102 SL100 PDF

    transistor eft 323

    Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 bauelemente DDR OA1180 TRANSISTOR BC 187
    Text: S E R V I C E - MI TTEILUNGEN r a d i o -television DATUM: Juli 1973 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN AUSGABE: 8/73 Neu« Import - Geräte LUDWIK und JUBILAT - Rundfunkempfänger aus der VR Polen Aua der VR Polen werden o.g. Rundfunkempfänger importiert. Beide Ge­


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    TRANSISTOR BI 187

    Abstract: sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126
    Text: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage


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    BUV71 T0126 15A3DIN TRANSISTOR BI 187 sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126 PDF

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


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    O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor PDF

    BEL 100N TRANSISTOR

    Abstract: bel 187 transistor PN3904 bel 188 transistor bel 187 transistor npn bel 187 BEL 100N bel 187 NPN TRANSISTOR bel 188 transistor pnp TRANSISTOR BC 187
    Text: VCE Si Device No VCEO VCBO Volts min V otts mm V eb o Volts min hFE at bias mm /max. Ic mA VcE V o lts 1 CM mA max P lo t mW max ICBO mA typ S at V otts typ pF typ ts ns typ N f <j B typ — — — TO 237 — — — TO 92 250 — — — TO 92 130 —


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    27min. 37min. 35friin. 50min 50min. 40min 40min. BEL 100N TRANSISTOR bel 187 transistor PN3904 bel 188 transistor bel 187 transistor npn bel 187 BEL 100N bel 187 NPN TRANSISTOR bel 188 transistor pnp TRANSISTOR BC 187 PDF

    BEL 100N TRANSISTOR

    Abstract: bel 187 transistor BEL 100p transistor bel 187 NPN TRANSISTOR transistor BEL 187 transistor bf 198 bel 188 transistor bel 100n transistor npn bel 188 transistor pnp BEL187
    Text: VCE Si Device No VCEO VCBO Volts min V otts mm V eb o Volts mm hFE at bias mm ^max. le mA VcE V o lts 1 CM mA max P lo t mW max ICBO mA typ S at V otts typ pF typ ts ns typ N f <j B typ — — — TO 237 — — — TO 92 250 — — — TO 92 130 — —


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    27min. 37min. 35friin. 50min 50min. 40min 40min. BEL 100N TRANSISTOR bel 187 transistor BEL 100p transistor bel 187 NPN TRANSISTOR transistor BEL 187 transistor bf 198 bel 188 transistor bel 100n transistor npn bel 188 transistor pnp BEL187 PDF

    bel187

    Abstract: bel 187 transistor BEL 100N TRANSISTOR BEL188 transistor bel 187 bel 187 NPN TRANSISTOR bel 188 transistor BEL100N bel 187 transistor npn PN3904
    Text: BHARAT ELEK/SEHICOND DI 47E D • 1 4 3 5 3 ‘iä G O G G Q 1 G Tifi ■ B E LI I VCE Si Device No VCEO Volts min VCBO Volts mm V eb o Volts min hFE at b<as mm /max. Ic mA VCE Volts 1CM mA max P lo t mW ICBO nA max typ S a t V otts typ Cob ts p l- ns typ


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    27min. 37min. 35friin. 50min 50min. 40min 40min. bel187 bel 187 transistor BEL 100N TRANSISTOR BEL188 transistor bel 187 bel 187 NPN TRANSISTOR bel 188 transistor BEL100N bel 187 transistor npn PN3904 PDF

    tl0841

    Abstract: TL084 TL084I TL084BC TL084C TL084M TL084MGC TL084BC internal circuit tl084 equivalent TL084T
    Text: *57 TL084 TL084A-TL084B S G S -T H O M S O N [ M [ ^ © [ i [ L [ l © ‘ÏÏB © [ftQ D © S J-FET INPUT QUAD OP-AMPs LOW POWER CONSUMPTION WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION


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    TL084 TL084A-TL084B DIP14 CERDIP14 LCC20 TL084, TL084A TL084B TL084-TL084A-TL084B tl0841 TL084I TL084BC TL084C TL084M TL084MGC TL084BC internal circuit tl084 equivalent TL084T PDF