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    BC 182 TRANSISTOR Search Results

    BC 182 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    BC 182 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC183

    Abstract: BC182 BC182A BC184 BC182B BC184 pin out transistors BC 183
    Text: MOTOROLA Order this document by BC182/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 182 BC 183 BC 184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage


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    PDF BC182/D BC182 BC183 BC184 BC182/D* BC183 BC182A BC184 BC182B BC184 pin out transistors BC 183

    bc 945

    Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
    Text: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549


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    PDF O-92-Gehà BC238 BC309 O-126 OT-32. O-220-A. OT-78 T0-220-B. bc 945 BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135

    TRANSISTOR BC 208

    Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
    Text: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2


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    PDF lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187

    BC 247

    Abstract: BC 247 B BC 245 C BC182 BC 248 siemens rs 248 BC 245 BC183 Bc 573 cbc182
    Text: SIE D SIEMENS • fl2 3 SbüS GDM],S24 n i HSIEG S I E M EN S A K T I E N G E S E L L S C H A F NPN Silicon AF Transistors BC 182 BC 183 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 212, BC 213 PNP Type BC


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    PDF fl23Sbà GDmS24 Q62702-C455 Q62702-C372 Q62702-C373 Q62702-C833 Q62702-C388 Q62702-C387 Q62702-C524 fl235bOS BC 247 BC 247 B BC 245 C BC182 BC 248 siemens rs 248 BC 245 BC183 Bc 573 cbc182

    l22e

    Abstract: BC213 BC212 BC213B BC212a BC212 Siemens bc 212 bc212b 213 T A212B
    Text: SIE D • SIEM ENS flE35b05 0D4153E Obfl M S I E 6 SI EM EN S A K T I E N G E S E L L S C H A F " P 2 ñ 'Z - l PNP Silicon AF Transistors BC212 BC 213 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 182, BC 183 NPN


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    PDF flE35b05 0D4153E BC212 Q62702-C242 Q62702-C374-V1 Q62702-C374-V2 Q62702-C564 Q62702-C1159 Q62702-C1160 Q62702-C1158 l22e BC213 BC213B BC212a BC212 Siemens bc 212 bc212b 213 T A212B

    BC182

    Abstract: bc183 bc184 transistors BC 183
    Text: BC182rA,B BC183 BC184 M AXIM UM RATINGS Rating S ym bol BC BC BC 182 1 83 184 U nit C o llecto r-E m itte r Voltage VCEO 50 30 30 Vdc C ollector-Base Voltage VCBO 60 45 45 Vdc E m itter-Base Voltage vebo 6 .0 Vdc C ollector C urrent - C ontinuous 'C 100 mAdc


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    PDF BC182rA BC183 BC184 O-226AA) BC237 fC183 BC184 BC182A BC182B BC182 transistors BC 183

    bc184 ra

    Abstract: cbc182 BC182 BC182A BC182B BC183 BC184 BC184 pin out
    Text: MOTOROLA Order this document by BC182/D SEMICONDUCTOR TECHNICAL DATA A m p lifie r T r a n s is t o r s B C 1 8 2 ,A ,B B C 183 B C 184 NPN Silicon COLLECTOR 1 MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol BC 182 BC 183 BC 184 Unit VCEO 50


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    PDF BC182/D BC182 BC183 BC184 O-226AA) bc184 ra cbc182 BC182A BC182B BC184 pin out

    BC182

    Abstract: BC183 BC184 bc183 motorola BC182A BC182B BC237 bc 182 BC183 3
    Text: BC182,A,B BC183 BC184 M A X IM U M RA TIN G S S ym b o l R a tin g BC BC BC 182 183 184 U n it C ollector-E m itter Voltage VCEO 50 30 30 Vdc Collector-Base Voltage VCBO 60 45 45 Vdc Em itter-Base Voltage Vebo 6.0 Vdc C ollector Current - Continuous ic 100


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    PDF BC183 BC184 O-226AA) BC182 BC183 BC184 BC182A BC182 bc183 motorola BC182A BC182B BC237 bc 182 BC183 3

    bc183b

    Abstract: BC183B MOTOROLA 2904S cbc182 BC184C transistors BC 183 BC182 bc184b BC183 2 bc184
    Text: MOTORCLA SC ISE D I t.3t.755M QaflSfl31 2 | XSTRS/R F - r r W 7 BC182, A, B BC183, A, B, C BC184, B, C M A X IM U M RATINGS Sym bol R a t in g BC BC BC 182 183 184 U n it C o lle c to r-E m itte r V o lta g e VcEO 50 30 30


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    PDF QaflSfl31 BC182 BC183 bc183b BC183B MOTOROLA 2904S cbc182 BC184C transistors BC 183 bc184b BC183 2 bc184

    CT bc182

    Abstract: bc212l BC182
    Text: CRO D E S C R IP T IO N The B C 182, B ' i 82L (N PN & B C 212, BC 212L (PN P) are complementary silicon planar epitaxial transistors for use in AF small signal am plifiers and drivers, as w ell as for low power universal applications. Both types feature good linearity o f DC current gain.


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    PDF BC182 BC182L BC212 BC212L BCT82. 10ChnA 200Hz CT bc182 bc212l

    transistor BC 331

    Abstract: BC 331 Transistor bc 331 BC182 BC184 bc 184 transistor h21e BC183 transistor BC 55 transistor bc 182
    Text: *BC182 BC 183 BC 184 NPN SILICON TRANSISTOR, EPITAXIAL P LA N A R T R A N S IS T O R N P N S ILIC IU M , P L A N A R E P IT A X IA L Compì, of BC 212, BC 213, BC 214 H* Preferred device D isp o sitif recommandé - Low noise preamplifier Préamplificateurs faible b ruit


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    PDF BC182 CB-76 V240-500 BC183C-BC184C 300tit 200/xA transistor BC 331 BC 331 Transistor bc 331 BC184 bc 184 transistor h21e BC183 transistor BC 55 transistor bc 182

    transistors BC 183

    Abstract: TR BC 238 BC Transistors h21E BC 182 TR BC 237 B bc 237 BC174 BC213A BC307A
    Text: general purpose transistors — plastic case transistors usage général — boîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maxim um ratings Type PNP Ptot min BC 174 BC 174 A BC 174 B mW (V) 300 64 / lc h21E VcEO h21 e * max (mA) 125* 110 200


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    PDF CB-76 transistors BC 183 TR BC 238 BC Transistors h21E BC 182 TR BC 237 B bc 237 BC174 BC213A BC307A

    TRANSISTOR BC 213

    Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    PDF BCW94 CB-76 TRANSISTOR BC 213 TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor

    Tfk 680

    Abstract: TFK 212 tfk 240 TFK 330 TRANSISTOR BC 182 TFK 03 160 TFK BC TFK U 212 B Bc182 75113
    Text: Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: NF-Vor- und Treiberstufen Applications: A F p re and d river stages Besondere Merkmale: Features: • Verlustleistung 300 mW • Power dissipation 300 m W • In G ruppen so rtie rt


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    transistor Bc 540

    Abstract: tfk 540 TFK 212 TRANSISTOR BC 212 bc 212 BC212 BC 540 TRANSISTOR
    Text: SHi2:ium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and driver stages Besondere Merkmale: Features: • • • • Verlustleistung 300 mW • In G ruppen so rtie rt


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    BTO18

    Abstract: sc 107 b BC190B BC190 BC140 BC 241 bo 139 BC107 2N3708 2N3707
    Text: Silicon NPN transistors, general purpose continued Tamb = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76 Page


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    PDF BC140 BTO18 sc 107 b BC190B BC190 BC 241 bo 139 BC107 2N3708 2N3707

    BC238

    Abstract: bc177-vi bc140 1012C 026 pnp
    Text: AF transistors Type Group A B BC 108 A B C B C BC 140 uCBO f j I q and 45 45 300 300 10 10 2 2 5 5 < 10 <10 20 20 20 300 300 300 10 10 10 110-220 200-450 110-220 200-450 420-800 2 2 2 5 5 5 20 20 300 300 10 10 200-450 420-800 2 2 5 5 £10 £10 £ 10 £4 £4


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    F21E

    Abstract: transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp
    Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,


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    PDF Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 F21E transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp

    BC 641

    Abstract: bc 207 npn BC190 bu 1011 ET 3005 h21e BU 208 BC140 BC190B bc107
    Text: Silicon N PN transistors, general purpose continued Tam b = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76


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    bfx 34

    Abstract: BCY79 BSX38 BSX45 BSX46 BSS23
    Text: AF transistors Type Group A B BC 108 A B C B C BC 140 u CBO f j at MHz V 45 45 at I q and mA 300 300 10 10 2 2 5 5 < 10 <10 20 20 20 300 300 300 10 10 10 110-220 200-450 110-220 200-450 420-800 2 2 2 5 5 5 20 20 300 300 10 10 200-450 420-800 2 2 5 5 £10 £10


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    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    BC5471

    Abstract: BC547E BC 548 NPN relay 876 N 2C S BC5461 BC2371 BC516 548 BC550 bc4151 TLC 5491
    Text: SIEMENS/ SPCL-. SEMIC ON DS Application Type NPN = N PNP = P 2TE D • epitaxial = E planar = PL suitable complementary transistors fl23b350 O D l b m b ■ T-'^-Ol Max. ratings Vc b o VCEO VfeBO le r, Plot flth JA [l/CES] V V V mA c mW K/W BC1671>N BC1681)N


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    PDF BC1671 BC1681 BC1821 BC2121 BC2371 BC2381 BC2391 BC2571 BC2581 BC2591 BC5471 BC547E BC 548 NPN relay 876 N 2C S BC5461 BC516 548 BC550 bc4151 TLC 5491

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175