BC 106 TRANSISTOR Search Results

BC 106 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BC 106 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
da5 diode Abstract: BC519 IPB048N06L IPP048N06L DA QG marking 1bc Text: IPP048N06L G IPB048N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J ,&, Y" ( 6 P S ? @5A1C	Original	PDF	IPP048N06L IPB048N06L da5 diode BC519 DA QG marking 1bc
2N6218 Abstract: BC530 T1923 triac mw 137 BC532 BFW45 tr bc 337 393P BC394 BC533 Text: SE MIC ONDUCT ORS INC CHE D \| fll3bbSG Q00D303 fi \| T-^ High V oltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39	OCR Scan	PDF	013bbS0 D0QD303 O-106 BC394 BC530 O-92A BC533 2N6218 T1923 triac mw 137 BC532 BFW45 tr bc 337 393P
2n6218 Abstract: 2sC 4927 393P BC285 BC532 C 4927 triac mw 137 BC394 BC530 BC533 Text: SE MIC ONDUCT ORS INC CHE D \| fll3bbSG Q00D303 fi \| T-^ High Voltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18	OCR Scan	PDF	013bbS0 D0QD303 O-106 BC394 BC530 O-92A BC533 2n6218 2sC 4927 393P BC285 BC532 C 4927 triac mw 137
2sc 9015 Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a Text: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K	OCR Scan	PDF	BC107 O-106 O-92B -26UNF-2A O-48D 2sc 9015 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
BC639 Abstract: r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138 Text: BC 635 • BC 637 • BC 639 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 636/BC 638/BC 640 Applications: For com plem entary AF driver stages.	OCR Scan	PDF	636/BC 638/BC BC639 r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138
BC640 Abstract: bc636 bc 637 bc 640 bc 141 BC 638 r 639 r 640 bc638 bc 106 BC 143 Text: BC 636 • BC 638 • BC 640 Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 635/BC 637/BC 639 Applications: For com plem entary AF driver stages.	OCR Scan	PDF	635/BC 637/BC BC640 bc636 bc 637 bc 640 bc 141 BC 638 r 639 r 640 bc638 bc 106 BC 143
BC327 Abstract: cbc328 BC328 BC 327 bc 327 complementary pair c 337 25 BC3280 pF83 Text: BC 327 • BC 328 Silii’ium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: Treiber und Endstufen A p p lic a tio n s : Driver and p o w e r stages Besondere Merkmale: Features: • Verlustleistung 625 mW • Power dissipation 625 m W	OCR Scan	PDF
c 337 25 Abstract: NPN 337 bc 170 c BC 337 bc 170 BC338 bc337 bc 338 npn bc 337 AF200 Text: BC 337 * BC 338 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: T reiber und Endstufen Applications: D river and p o w e r stages Features: Besondere Merkmale: • Verlustleistung 625 mW • In G ruppen so rtie rt	OCR Scan	PDF
BC160 Abstract: bc 160 BC161 TFK BC TFK 175 TFK 236 bc 141 Text: ip ^ B C 160- BC 161 Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: NF-Verstärker und Schalter Applications: AF am plifiers and switches Besondere Merkmale: Features: • Verlustleistung 3,2 W • Power dissipation 3.2 W	OCR Scan	PDF
bc1417 Abstract: BC140-BC141 BC 545 bc 141 bc140 tfk 545 bc 140 BC140B BC141 S45C Text: Silizium- NPN-Epitaxial-Planar-NF-T ransistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Verstärker und Schalter A p p lic a tio n s : AF am plifiers and sw itches Besondere Merkmale: F eatures: • Verlustleistung 3,7 W • Power dissipation 3,7 W	OCR Scan	PDF
BC478 Abstract: BC479 BC 195 TRANSISTORS BC477 Text: BC 477 BC 478 BC 479 SILICON P L A N A R P N P LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC477, BC 478 and BC479 are silicon planar epitaxial P N P transistors in TO-18 metal case. The B C 477 is a high voltage type designed for use in audio amplifiers or driver	OCR Scan	PDF	BC479 BC478 BC 195 TRANSISTORS BC477
TRANSISTOR BC 416 b pnp Abstract: TRANSISTOR BC 415 TRANSISTOR BC 416 b TRANSISTOR BC 415 b pnp BC 104 transistor bc416 TFK 802 tfk 416 TFK 110 TRANSISTOR BC 560 Text: BC 415 • BC 416 Silizium-PNP-Epitaxial-Planar NF-Transistoren Silicon PN P Epitaxial Planar A F Transistors Anwendungen: Rauscharme Vorstufen Applications: Low noise pre stages Features: Besondere Merkmale: • Rauschmaß < 2 dB • Noise figure < 2 dB • In Gruppen sortiert	OCR Scan	PDF
1.0 k mef 250 Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072 Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a	OCR Scan	PDF	semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
transistor BC 236 Abstract: bc 106 transistor transistors marking HK transistor C 639 W transistors BC 23 bc 569 A27 637 transistor BC 639 A27 639 marking code transistor HK Text: 17E T> TELEFUNKEN ELECTRONIC • 0^2DDBb 000^30^ BC 635 • BC 637 • BC 639 TTIILIIFIUIÄINI electronic Creative 'ftehnotag>ea r - a i -33 Silicon NPN Epitaxial Planar Transistors Applications: For complementary AF driver stages features: • • High power.dissipation	OCR Scan	PDF	BC635 15A3DIN transistor BC 236 bc 106 transistor transistors marking HK transistor C 639 W transistors BC 23 bc 569 A27 637 transistor BC 639 A27 639 marking code transistor HK

transistor BC 236 Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor Text: *T I 17E » TELEFUNKEN E L E C T R O N IC TTdlUKFCtfllMOSlKfi • IAL66 û'tëOCHb DODTB^l BC 636 • BC 638 • BC 640 electronic Creata« léchnofogtes Silicon PNP Epitaxial Planar Transistors Applications: For complementary AF driver stages .Features:	OCR Scan	PDF	IAL66 15A3DIN transistor BC 236 transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
TFK u 116 Abstract: TFK 236 TRANSISTOR BC 119 transistor BC 236 6tfk BC431 CES10116 tfk 106 BC432 6 TFK 106 Text: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Verlustleistung 625 mW	OCR Scan	PDF
TRANSISTOR BC 208 Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187 Text: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2	OCR Scan	PDF	lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
transistor vergleichsliste Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G	OCR Scan	PDF
BC250 Abstract: transistor bc250 transistor bc 102 BC 250 transistor bc 100 Text: BC250 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its D C current gain. Plastic package = J E D E C T O -9 2 T O -1 8 com patible The ca se is im pervious to light	OCR Scan	PDF	BC250 BC250 transistor bc250 transistor bc 102 BC 250 transistor bc 100
SSY20 Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen Vorzugs anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3	OCR Scan	PDF
856AF Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1998 Nov 10 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Preliminary specification PNP general purpose transistors BC856F; BC857F; BC858F series FEATURES PINNING • Pow er dissipation com parable to S O T23	OCR Scan	PDF	BC856F; BC857F; BC858F SC-89 BC846F, 115002/00/02/pp8 856AF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	PDF	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
NBC107 Abstract: PH BC107 BC 109B BC107 Tr BC109 Text: DISCRETE SEMICONDUCTORS BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Sep 03 PHILIPS Philips Semiconductors Product specification	OCR Scan	PDF	BC107; BC108; BC109 117047/00/04/pp8 NBC107 PH BC107 BC 109B BC107 Tr BC109
C327a Abstract: C337A Text: BC327 BC327A BC328 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO -92 package, p rim a rily intended fo r use in d rive r and o u tp u t stages o f audio am plifiers. The BC327, BC 327A, BC328 are com plem entary to the BC337, B C 337A and BC338 respectively.	OCR Scan	PDF	BC327 BC327A BC328 BC327, BC328 BC337, BC338 BC327; C327a C337A

BC 106 TRANSISTOR Search Results

BC 106 TRANSISTOR Result Highlights (5)

BC 106 TRANSISTOR Datasheets Context Search

da5 diode

2N6218

2n6218

2sc 9015

BC639

BC640

BC327

c 337 25

BC160

bc1417

BC478

TRANSISTOR BC 416 b pnp

1.0 k mef 250

transistor BC 236

transistor BC 236

TFK u 116

TRANSISTOR BC 208

transistor vergleichsliste

BC250

SSY20

856AF

ksd 302 250v, 10a

NBC107

C327a