BBY26 Search Results

BBY26 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
BBY26		Unknown	Diode, Transistor, Thyristor Datasheets and more		Scan	PDF
BBY26		Siemens	Semiconductor Manual, Discrete Industrial Types 1974		Scan	PDF
BBY26-S1		Siemens	Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V)		Original	PDF
BBY26-S1		Siemens	Microwave, RF & Tuner Diodes		Scan	PDF
BBY26-S1		Siemens	Silicon Tuning Varactors		Scan	PDF

BBY26 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BBY24 Abstract: BBY25 BBY26 BBY27 Text: BBY24, BBY25, BBY26, BBY27 Depletion-layer varactors B B Y 24 through B B Y 27 are epitaxial silico n mesa depletion-layer varactors and are particularly designed for use in m odulation and tuning app licatio ns in the G H z range. The varactors are housed in a m icrow ave case w ith a go ld-p la ted Ni lead	OCR Scan	PDF	BBY24, BBY25, BBY26, BBY27 BBY24 BBY27 Q62702-B BBY25 BBY26
diode S6 78A Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14	OCR Scan	PDF	O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
IAO5 Sharp Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071 Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The	OCR Scan	PDF	Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
BFT65 Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions	OCR Scan	PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	PDF	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
bby36 Abstract: bby27 BBY24-S1 BBY25-S1 BBY26-S1 BBY27-S2 BBY33DA2 BBY34D BBY35F D035 Text: SIEMENS AKTIEN 6ESELLS CHA F bGE D Û2 3£b 05 D045M34 b n B IS IE Û Microwave, RF & Tuner Diodes 0 7 -/7 For complete package outlines, refsr to pages PO-1 through PO-6 Hyperabrupt Varactors Maximum Ratings ^R V BBY34D BBY35F BBY36 Characteristics T =25°C	OCR Scan	PDF	D045434 BBY34D BBY35F BBY36 BBY24-S1 BBY25-S1 BBY26-S1 bby27 BBY27-S2 BBY33DA2 D035
APY12 Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367 Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP	OCR Scan	PDF	Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367