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    BBV TRANSISTOR Search Results

    BBV TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    BBV TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat). 1. BASE 2.EMITTER 3.COLLECTOR MARKING: BBV,BBW MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD2114 OT-23 100MHz 500mA,

    BBV marking

    Abstract: 2SD2114 bbv 08 BBV transistor marking BBW
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat). 1. BASE 2.EMITTER 3.COLLECTOR MARKING: BBV,BBW MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD2114 OT-23 100MHz 500mA, BBV marking 2SD2114 bbv 08 BBV transistor marking BBW

    BBV transistor

    Abstract: marking BBW marking BBV BBV marking
    Text: 2SD2114 SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features — High DC current gain. hFE = 1200 (Typ.) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA) — — MARKING: BBV,BBW MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD2114 OT-23 500mA 500mA, 100MHz BBV transistor marking BBW marking BBV BBV marking

    AIC1782

    Abstract: a1012 transistor D468 transistor transistor d468 d468 transistor A1012 thermistor RY 126 5W battery charger aic1563 step up 1N4148
    Text: AIC1782 Dual-Battery Charge Controller n FEATURES l l l l l l l l l l l l n DESCRIPTION Quick and Easy Testing for Production. Sequential Charging Control of Two NiMH/NiCd Battery Packs. Reliable Sequential Fast Charge Control of Dual NiMH and/or NiCd Battery Packs, even with a


    Original     		PDF AIC1782 AIC1782 a1012 transistor D468 transistor transistor d468 d468 transistor A1012 thermistor RY 126 5W battery charger aic1563 step up 1N4148

    Untitled

    Abstract: No abstract text available
    Text: AIC1782 Dual-Battery Charge Controller FEATURES DESCRIPTION Quick and Easy Testing for Production. Sequential Charging Control of Two NiMH/NiCd Battery Packs. Reliable Sequential Fast Charge Control of Dual NiMH and/or NiCd Battery Packs, even with a Fluctuating Charging Current.


    Original     		PDF AIC1782

    transistor d468

    Abstract: D468 transistor transistor D468 circuit diagram application transistor A1012 a1012 transistor A1012 thermistor RY 126 BBV transistor 4 pin battery charger laptop 12v d468
    Text: AIC1782 Dual-Battery Charge Controller FEATURES DESCRIPTION Quick and Easy Testing for Production. Sequential Charging Control of Two NiMH/NiCd Battery Packs. Reliable Sequential Fast Charge Control of Dual NiMH and/or NiCd Battery Packs, even with a Fluctuating Charging Current.


    Original     		PDF AIC1782 AIC1782 transistor d468 D468 transistor transistor D468 circuit diagram application transistor A1012 a1012 transistor A1012 thermistor RY 126 BBV transistor 4 pin battery charger laptop 12v d468

    transistor D468 circuit diagram application

    Abstract: thermistor RY 126
    Text: AIC1782 Dual-Battery Charge Controller FEATURES DESCRIPTION Quick and Easy Testing for Production. Sequential Charging Control of Two NiMH/NiCd Battery Packs. Reliable Sequential Fast Charge Control of Dual NiMH and/or NiCd Battery Packs, even with a Fluctuating Charging Current.


    Original     		PDF AIC1782 transistor D468 circuit diagram application thermistor RY 126

    transistor D468 circuit diagram application

    Abstract: 4 pin battery charger laptop 12v transistor d468 a1012 transistor transistor A1012 78L05 voltage regulator pin configuration d468 3904 dual ATS diagram TL 78l05
    Text: SS6782G Charge Controller for Dual Batteries FEATURES DESCRIPTION Quick and easy testing for production. Sequential charging control of two NiMH/NiCd Battery Packs. Reliable sequential fast charge control of dual NiMH and/or NiCd Battery Packs, even with a fluctuating charging current.


    Original     		PDF SS6782G transistor D468 circuit diagram application 4 pin battery charger laptop 12v transistor d468 a1012 transistor transistor A1012 78L05 voltage regulator pin configuration d468 3904 dual ATS diagram TL 78l05

    BBV marking

    Abstract: 2SD2114
    Text: 2SD2114 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z High DC current gain :hFE = 1200 Typ High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)


    Original     		PDF 2SD2114 500mA OT-23 500mA, 100MHz 01-June-2005 BBV marking 2SD2114

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. hFE = 1200 (Typ.) z High emitter-base voltage. VEBO =12V (Min.) z Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)


    Original     		PDF OT-23 2SD2114 OT-23 500mA 100MHz 500mA,

    BBV transistor

    Abstract: 2SD2114 SOT-23 2.D SOT-23-hg VEBO-12V transistor k 820
    Text: 2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC Current Gain. High Emitter-Base Voltage. VEBO=12V Min. A L 3 3 C B Top View CLASSIFICATION OF hFE


    Original     		PDF 2SD2114 OT-23 2SD2114-V 2SD2114-W 500mA, 100MHz 24-Feb-2011 BBV transistor 2SD2114 SOT-23 2.D SOT-23-hg VEBO-12V transistor k 820

    bfw 10 FET

    Abstract: BFW transistors BBV 47 transistors BAKW BFW 10 A FET HCA0207 LCA0204 LCA0207 LCA0411 LCA0414
    Text: LCA…x x HCA0207 SKS CBB SPW B , T, D , G w w w. v i s h a y. c o m Selector Guide Carbon film resistors R e s i s t i v e p r o d uc t s V I S HAY INTERTE C HNOLO G Y , IN C . Carbon Film Resistors Key Features • A wide range of power ratings 0.25 W to 120 W


    Original     		PDF HCA0207 LCA0204 LCA0207 LCA0411 LCA0414 LCA0204NE VMN-SG2034-0708 bfw 10 FET BFW transistors BBV 47 transistors BAKW BFW 10 A FET HCA0207 LCA0204 LCA0207 LCA0411 LCA0414

    400 kv ct

    Abstract: TD05 CDHV2512 CRHV1206 CRHV1210 CRHV2010 CRHV2510 CRHV2512 TR03 TR05
    Text: B, T CRHV CDHV D, G FHV H V W, M V W RNX ROX RJU RDX TR TD w w w. v i s h a y. c o m S e l ector G uide high voltage products resistive products V I S H AY I N T E R T E C H N O L O G Y, I N C . High-Voltage Products Applications High voltage, voltage dividers, ultra-high-power, high-power, lighting, general, and special purpose applications.


    Original     		PDF CRHV1206 CRHV2510 CRHV2512 VMN-SG2087-0609 400 kv ct TD05 CDHV2512 CRHV1206 CRHV1210 CRHV2010 CRHV2510 CRHV2512 TR03 TR05

    mosfet d436 datasheet

    Abstract: MD5 5vDC Sun Hold transistor a844 SUN HOLD MD5 5vDC nec a1129 d1541 potensiometer bd632 transistor D1541 circuit diagram application a1129
    Text: Freescale Semiconductor, Inc. User’s Manual Freescale Semiconductor, Inc. MPC86XADS Version-A January 14, 2003 MPC86XADS User’s Manual Motorola, Inc., 2003 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.


    Original     		PDF MPC86XADS FreescaleMPC866ADS mosfet d436 datasheet MD5 5vDC Sun Hold transistor a844 SUN HOLD MD5 5vDC nec a1129 d1541 potensiometer bd632 transistor D1541 circuit diagram application a1129

    IN475

    Abstract: MC146818 RTC CHIP MC146818 3volt inverter DS-VT-200 MC74HC373
    Text: M MOTOROLA AN894A Application Note Semiconductor Products Inc. USER CONSIDERATIONS FOR MC146818 REAL TIME CLOCK APPLICATIONS Prepared by Patrick Svatek System Applications Engineering Department Motorola, Inc. Austin, Texas IN T R O D U C T IO N This application note provides information concerning the


    OCR Scan     		PDF AN894A MC146818 compC146818 C29681 IN475 MC146818 RTC CHIP 3volt inverter DS-VT-200 MC74HC373

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Preliminary data BTS 426 PROFET D e scrip tio n High-side switch Overtem perature protection Overload protection Short circuit protection by overtem perature protection Overvoltage protection Input protection Clamp o f negative output voltage with inductive loads


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN3526 FBET Hybrid tC VPA10 No. 3 5 2 8 i Video Pack, Video Output Amplifier SAW O r for High-resolution CRT Displays i "V OVERVIEW PINOUT The VPA10 is ideally suited to medium-resolution mon­ itors which use a 64 kHz line frequency. Applications


    OCR Scan     		PDF EN3526 VPA10 VFA10 VPA10

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BTS 432 F PROFET • • • • • High-side switch most suitable for inductive loads Short-circuit protection Overtemperature protection Overload protection Load dump protection • Undervoltage and overvoltage shutdown with auto-restart and hysteresis


    OCR Scan     		PDF T022Better E3043 C67078-S5303-A16 E3062 C67078-S5303-A10 C67078-S5303-A5 E3040 C67078-S5303-A9

    Untitled

    Abstract: No abstract text available
    Text: Ö E B S b G S D G Ö 1 4 7 D bT3 SIEMENS PROFET BTS430K2 Smart Highside Power Switch Features • • • • • • • • • • • Product Summary Clamp of negative voltage at output V bb-V ouT Avalanche Short-circuit protection I4 b operation)


    OCR Scan     		PDF BTS430K2 fl235bDS A235b05

    BBV transistor

    Abstract: smd 2dn
    Text: SIEM ENS PROFET BTS 432 F2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dum p and reverse battery p rote ction 1 80 H o a d dum p C lam p of negative voltage at output 58 V'bb- V o u t A v a la n c h e C la m p


    OCR Scan     		PDF

    UJT 2N2646

    Abstract: UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 2N2646 2N2647 SCR firing inverter circuit UJT 2N2646 ratings 2N4891
    Text: UNIJUNCTIONS, TRIG G ERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de­ velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 26B-2N2647-HI UJT 2N2646 UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 2N2646 2N2647 SCR firing inverter circuit UJT 2N2646 ratings 2N4891

    Untitled

    Abstract: No abstract text available
    Text: LM96551 LM96551 Ultrasound Transm it Puiser Te x a s In s t r u m e n t s Literature Number: SN AS511A *%1 Texas LM96551 In s t r u m e n t s Ultrasound Transmit Puiser General Description Features The LM96551 is an eight-channel monolithic high-voltage, high-speed pulse generator for multi-channel medical ultra­


    OCR Scan     		PDF LM96551 LM96551 AS511A LM965XX

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


    OCR Scan     		PDF O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680