VDFPN 8x6
Abstract: MARKING code mf stmicroelectronics marking AAAA SO8 NARROW TOPSIDE MARKING STMicroelectronics AN1995 VDFPN STMicroelectronics TRACEABILITY code MARKING code mf stmicroelectronics so16 MARKING SO8
Text: AN1995 APPLICATION NOTE Serial Flash Memory Device Marking The market trend is for ever greater package miniaturization. Today’s small packages already have very limited space for the device marking. The need to be readable sets a lower limit on the character size. This, along with the upper limit on the
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AN1995
VDFPN 8x6
MARKING code mf stmicroelectronics
marking AAAA
SO8 NARROW
TOPSIDE MARKING STMicroelectronics
AN1995
VDFPN
STMicroelectronics TRACEABILITY code
MARKING code mf stmicroelectronics so16
MARKING SO8
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Untitled
Abstract: No abstract text available
Text: Si1046R Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Qg (Typ.) 0.420 at VGS = 4.5 V ID (A)a 0.606 0.501 at VGS = 2.5 V 0.505 0.92 0.660 at VGS = 1.8 V 0.15 • Halogen-free According to IEC 61249-2-21 Definition
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Si1046R
2002/95/EC
SC75-3L
Si1046R-T1-GE3
11-Mar-11
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0606B
Abstract: 74595
Text: Si1046R Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Qg (Typ.) 0.420 at VGS = 4.5 V ID (A)a 0.606 0.501 at VGS = 2.5 V 0.505 0.92 0.660 at VGS = 1.8 V 0.15 • Halogen-free According to IEC 61249-2-21 Definition
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Si1046R
2002/95/EC
SC75-3L
Si1046R-T1-GE3
11-Mar-11
0606B
74595
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Si1012CR-T1-GE3
Abstract: SI1012CR
Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21 Definition
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Si1012CR
2002/95/EC
SC-75A
Si1012CR-T1-GE3
11-Mar-11
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74595
Abstract: No abstract text available
Text: Si1046R Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Qg (Typ.) 0.420 at VGS = 4.5 V ID (A)a 0.606 0.501 at VGS = 2.5 V 0.505 0.92 0.660 at VGS = 1.8 V 0.15 • Halogen-free According to IEC 61249-2-21 Definition
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Si1046R
2002/95/EC
SC75-3L
Si1046R-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
74595
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Untitled
Abstract: No abstract text available
Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21
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Si1012CR
2002/95/EC
SC-75A
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated
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Si1012CR
SC-75A
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SI1012CR
Abstract: No abstract text available
Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated
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Si1012CR
SC-75A
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21
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Si1013R/X
2002/95/EC
SC-75A
SC-89
SC-75A
OT-416)
Si1013R
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21
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Si1013R/X
SC-75A
SC-89
2002/95/EC
SC-75A
OT-416)
Si1013R
OT-490)
Si1013X
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ALPHA YEAR DATE CODE
Abstract: AOZ8011 AOZ8011DI DFN-16 100CHN chn 1060 land pattern for DFN CHN 010 AOS date code System alpha date code System
Text: AOZ8011 8-Line EMI Filter with Integrated ESD Protection General Description Features The AOZ8011 is an 8-line device integrating EMI filtering with ESD protection for each line. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge ESD protection in portable electronic
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AOZ8011
AOZ8011
ALPHA YEAR DATE CODE
AOZ8011DI
DFN-16
100CHN
chn 1060
land pattern for DFN
CHN 010
AOS date code System
alpha date code System
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Untitled
Abstract: No abstract text available
Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21
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Si1013R/X
2002/95/EC
SC-75A
SC-89
SC-75A
OT-416)
Si1013R
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated
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Si1012CR
SC-75A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21
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Si1012CR
2002/95/EC
SC-75A
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: RClamp0524PA RClamp0522P Ultra Low Capacitance TVS Arrays PROTECTION PRODUCTS - RailClamp Description PRELIMINARY Features RailClamp® TVS arrays are ultra low capacitance ESD protection devices designed to protect high speed data interfaces. This series has been specifically designed to
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RClamp0524PA
RClamp0522P
0522P
0524PA
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rclamp0544t
Abstract: SLP2510P8 RCLAMP0524P rclamp0524pa RCLAMP0524PATCT 0524p MDDI 1.2 RCLAMP0524 RCLAMP0524PA.TCT 0524PA
Text: RClamp0522PA RClamp0524PA Ultra Low Capacitance TVS Arrays PROTECTION PRODUCTS - RailClamp Description PRELIMINARY Features RailClamp® TVS arrays are ultra low capacitance ESD protection devices designed to protect high speed data interfaces. This series has been specifically designed to
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RClamp0522PA
RClamp0524PA
0522PA
0524PA
rclamp0544t
SLP2510P8
RCLAMP0524P
rclamp0524pa
RCLAMP0524PATCT
0524p
MDDI 1.2
RCLAMP0524
RCLAMP0524PA.TCT
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AOZ8010
Abstract: AOZ8010DIL AOZ8010DTL DFN-16 AOS date code System
Text: AOZ8010 8-Line EMI Filter with Integrated ESD Protection General Description Features The AOZ8010 is an 8-line device integrating EMI filtering with ESD protection for each line. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge ESD protection in portable electronic
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AOZ8010
AOZ8010
AOZ8010DIL
AOZ8010DTL
DFN-16
AOS date code System
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SC-89-3
Abstract: No abstract text available
Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21
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Si1013R/X
2002/95/EC
SC-75A
SC-89
SC-75A
OT-416)
Si1013R
2011/65/EU
2002/95/EC.
2002/95/EC
SC-89-3
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TRANSISTOR SMD MARKING CODE pa
Abstract: smd transistor marking PA TRANSISTOR SMD MARKING CODE ce MOSFET TRANSISTOR C65 TRANSISTOR SMD CODE PACKAGE SOT363 MOSFET TRANSISTOR SMD MARKING CODE 7 MOSFET C65 TRANSISTOR SMD MARKING CODE 26 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE C65
Text: PRODUCT announcement Multi Discrete Module in a SOT-563 features • Multiple devices in a single SMD package • Utilizes Basic Building Block BBB device combinations • Space saving/low profile SOT-563 SMD package Sample devices description Central Semiconductor is please to introduce Multi Discrete
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OT-563
OT-563
CMLM0205:
CMLM0405:
CMLM0605:
CMLM0705:
CMLM2205:
TRANSISTOR SMD MARKING CODE pa
smd transistor marking PA
TRANSISTOR SMD MARKING CODE ce
MOSFET TRANSISTOR C65
TRANSISTOR SMD CODE PACKAGE SOT363
MOSFET TRANSISTOR SMD MARKING CODE 7
MOSFET C65
TRANSISTOR SMD MARKING CODE 26
TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD MARKING CODE C65
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103670
Abstract: No abstract text available
Text: Antorderunqsstufe /Class Z Dä Date code / 7 INH3 xxxxxxx EE Zone für durchkontaktierte Löcher 00.6 ±0.05 compliant zone for thru hole 0 06±0.05 Ebene - Levä 3 — I— I— I— I - 1max 1 max 38 max Bestiickungsplon - contact layout 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
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Mi00069212
ERMB19
103670
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Burroughs Corporation
Abstract: Burroughs alphanumeric 32 char display EB124 MSK 4206 E13b burroughs "tape storage" "tape file" "magnetic tape"
Text: BULLETIN 200-21001 Revision B JULY, 1964 B 200 SERIES ELECTRONIC DATA PROCESSING SYSTEMS REFERENCE MANUAL Burroughs Corporation J J4 D etro it, M ich ig a n 48232 In C anada : B u rro u g h s B u sin ess M achines L td ., T o ro n to , O n ta rio C O P Y R IG H T
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ks0066f00
Abstract: Jzc 40F KSOO66FOO KS0066F04 KS0066 KS0066F LBGD bcc-aa ks0065 KS0066F06
Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0066 DOT MATRIX LCD CONTROLLER & DRIVER The K S0066 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology FUNCTION • Character type dot matrix LCD driver & controller • Internal driver: 16 common and 40 segment signal output.
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KS0066
KS0066
32kinds
KSQ066F00,
00207D4
ks0066f00
Jzc 40F
KSOO66FOO
KS0066F04
KS0066F
LBGD
bcc-aa
ks0065
KS0066F06
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Jzc 40F
Abstract: No abstract text available
Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0066 DOT MATRIX LCD CONTROLLER & DRIVER The K S0066 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology FUNCTION • Character type dot matrix LCD driver & controller • Internal driver: 16 common and 40 segment signal output.
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OCR Scan
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KS0066
S0066
32kinds
KSQ066F00,
Jzc 40F
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Darlington Transistors • • • • BCV 29 BCV 49 For general AF applications High collector current High current gain Complementary types: BCV 28, BCV 48 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1)
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OCR Scan
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Q62702-C1853
Q62702-C1832
OT-89
235bD5
D12M3fa
0120R37
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