Untitled
Abstract: No abstract text available
Text: • bb53tm □ □ Eb7T3 bS2 H A P X N AMER PHILIPS/DISCRETE BZW 03 S E R IE S b^E D REGULATOR DIO DES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppression
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bb53t
03-C510
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE D • QOEflflM? M3fl P h ilip s S e m icon d u ctors Data sheet Product specification status BLU56 UHF power transistor date of issue January 1991 FE A T U R E S • SM D encapsulation • Emitter-ballasting resistors for optimum temperature profile
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BLU56
bbS3T31
002AA53
MCB030
MC8027
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Untitled
Abstract: No abstract text available
Text: N AMER RHILIPS/DISCRETE APX bb53T31 DDS&blE 3S7 TIP47; TIP48 TIP49; TIP50 b^E ]> _ SILICON DIFFUSED POWER TRANSISTORS Medium-voltage, high-speed, glass-passivated NPN power transistors in TO-220 envelope for am plifier
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bb53T31
TIP47;
TIP48
TIP49;
TIP50
O-220
TIP47
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philips ph 116 capacitor
Abstract: No abstract text available
Text: bbS3T31 0 0 3 2 4 ^ 12T « A P X Philips Semiconductors Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2046 N AUER PHILIPS/DISCRETE DESCRIPTION PIN CONFIGURATION PINNING A one-stage wideband amplifier in hybrid integrated circuit technology
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bbS3T31
OM2046
MCD447
DD32473
philips ph 116 capacitor
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C6V2
Abstract: No abstract text available
Text: • ^53=531 0025732 354 M A R X N AMER PHILIPS/DISCRETE BZV55 SERIES L7E D 7 V VOLTAGE REGULATOR DIODES FOR SURFACE MOUNTING Silicon planar diodes designed fo r use as low-voltage stabilizers o r voltage references. They are available in the international standardized E24 ± 5% range, and also in tolerance ranges o f 2% and 3%.
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BZV55
OD80C
volt55
bb53t
0DE5744
bb53B31
002S7M5
C6V2
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D bbSBTBl DD2656b 435 APX BUX84F BUX85F SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith an electrically isolated mounting base. The device is intended for use in converters, inverters,
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DD2656b
BUX84F
BUX85F
OT186
Tot12
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