Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BB16 Search Results

    SF Impression Pixel

    BB16 Price and Stock

    Suntsu Electronics Inc SXT32418BB16-18.432M

    CRYSTAL 18.432MHZ 18PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SXT32418BB16-18.432M Bulk 3,790 1
    • 1 $0.35
    • 10 $0.294
    • 100 $0.2352
    • 1000 $0.22344
    • 10000 $0.22344
    Buy Now

    Suntsu Electronics Inc SXT32419BB16-13.560M

    CRYSTAL 13.560MHZ 19PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SXT32419BB16-13.560M Bulk 3,720 1
    • 1 $0.35
    • 10 $0.279
    • 100 $0.2149
    • 1000 $0.20186
    • 10000 $0.20186
    Buy Now

    Suntsu Electronics Inc SXT32416BB16-13.000M

    CRYSTAL 13.000MHZ 16PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SXT32416BB16-13.000M Bulk 3,500 1
    • 1 $0.54
    • 10 $0.438
    • 100 $0.3377
    • 1000 $0.31768
    • 10000 $0.31768
    Buy Now

    Suntsu Electronics Inc SXT22417BB16-50.000M

    CRYSTAL 50.000MHZ 17PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SXT22417BB16-50.000M Bulk 3,300 1
    • 1 $0.71
    • 10 $0.616
    • 100 $0.4957
    • 1000 $0.46572
    • 10000 $0.46572
    Buy Now

    Suntsu Electronics Inc SXT32413BB16-44.000M

    CRYSTAL 44.000MHZ 13PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SXT32413BB16-44.000M Bulk 3,000 1
    • 1 $1.11
    • 10 $1.011
    • 100 $0.8109
    • 1000 $0.71092
    • 10000 $0.71092
    Buy Now

    BB16 Datasheets (45)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BB16 Unknown MOMENTARY & ALTERNATE/ANTISTATIC/WASHABLE Scan PDF
    BB-161.1328MBE-T TXC Oscillators, Crystals and Oscillators, OSC XO 161.1328MHZ LVPECL SMD Original PDF
    BB-161.1328MCE-T TXC Oscillators, Crystals and Oscillators, OSC XO 161.1328MHZ LVPECL SMD Original PDF
    BB-1630 Trinamic Motion Control Development Boards, Kits, Programmers - Accessories - BASEBOARD BLDC MOTOR CONTROLLER Original PDF
    BB164 Philips Semiconductors VHF variable capacitance diode Original PDF
    BB-166.000MBE-T TXC Oscillators, Crystals and Oscillators, OSC XO 166.000MHZ LVPECL SMD Original PDF
    BB-166.000MCE-T TXC Oscillators, Crystals and Oscillators, OSC XO 166.000MHZ LVPECL SMD Original PDF
    BB16AB NKK Switches Pushbutton Switches, Switches, SWITCH PUSH SPDT 0.4VA 28V Original PDF
    BB16AB1 NKK Switches Pushbutton Switches, Switches, SWITCH PUSH SPDT 0.4VA 28V Original PDF
    BB16AB-FA NKK Switches Momentary & Alternate / Antistatic / Washable Pushbutton Switch Scan PDF
    BB16AB-FB NKK Switches Momentary & Alternate / Antistatic / Washable Pushbutton Switch Scan PDF
    BB16AB-FC NKK Switches Momentary & Alternate / Antistatic / Washable Pushbutton Switch Scan PDF
    BB16AB-HA NKK Switches Momentary & Alternate / Antistatic / Washable Pushbutton Switch Scan PDF
    BB16AB-HB NKK Switches Momentary & Alternate / Antistatic / Washable Pushbutton Switch Scan PDF
    BB16AB-HC NKK Switches Momentary & Alternate / Antistatic / Washable Pushbutton Switch Scan PDF
    BB16AH NKK Switches Pushbutton Switches, Switches, SWITCH PUSH SPDT 0.4VA 28V Original PDF
    BB16AH-FA NKK Switches Momentary & Alternate / Antistatic / Washable Pushbutton Switch Scan PDF
    BB16AH-FB NKK Switches Momentary & Alternate / Antistatic / Washable Pushbutton Switch Scan PDF
    BB16AH-FC NKK Switches Momentary & Alternate / Antistatic / Washable Pushbutton Switch Scan PDF
    BB16AH-HA NKK Switches Momentary & Alternate / Antistatic / Washable Pushbutton Switch Scan PDF

    BB16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100-Ball

    Abstract: 288-ball
    Text: Package Diagrams Thin Ball Grid Array Packages 100-Ball Thin Ball Grid Array 11 x 11 x 1.4 mm BB100 51-85107 1 Package Diagrams 165-Ball FBGA (13 x 15 x 1.35 mm) BB165 51-85122 2 Package Diagrams 172-Ball FBGA BB172 51-85114 3 Package Diagrams 256-Ball Thin Ball Grid Array (17 x 17 mm) BB256


    Original
    PDF 100-Ball BB100 165-Ball BB165 172-Ball BB172 256-Ball BB256 1-85108-A 288-Ball

    BB164

    Abstract: SC-76
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BB164 VHF variable capacitance diode Product specification Supersedes data of 1997 Dec 17 2004 Mar 02 Philips Semiconductors Product specification VHF variable capacitance diode BB164 FEATURES PINNING • High linearity PIN


    Original
    PDF BB164 sym008 BB164 OD323 SCA76 R77/02/pp7 SC-76

    smd code marking 777

    Abstract: st smd diode marking code BB164 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB164 VHF variable capacitance diode Product specification File under Discrete Semiconductors, SC01 1997 Dec 17 Philips Semiconductors Product specification VHF variable capacitance diode BB164 FEATURES DESCRIPTION


    Original
    PDF M3D049 BB164 BB164 OD323 SCA56 117027/1200/01/pp8 smd code marking 777 st smd diode marking code BP317

    DIODE smd marking 821

    Abstract: smd diode marking sm 34 smd diode 6F MCC SMD DIODE Diode smd code sm 97 diode SMD CODE sm 17 smd marking BLD Diode smd marking 44 st smd diode marking code marking 501 sod323
    Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB164 VHF variable capacitance diode Product specification 1997 Dec 17 Philips Semiconductors Product specification VHF variable capacitance diode BB164 FEATURES DESCRIPTION • High linearity The BB164 is a planar technology


    Original
    PDF M3D049 BB164 OD323 BB164 DIODE smd marking 821 smd diode marking sm 34 smd diode 6F MCC SMD DIODE Diode smd code sm 97 diode SMD CODE sm 17 smd marking BLD Diode smd marking 44 st smd diode marking code marking 501 sod323

    BB209

    Abstract: BB100 BB484 165 BALL FBGA BB42 bb209a 288-ball 676-BALL BB165B
    Text: Package Diagrams Thin Ball Grid Array Packages 42-Ball Thin Ball Grid Array 6 x 5 x 1.2 mm BB42 51-85139-*A 1 Package Diagrams 100-Ball Thin Ball Grid Array (11 x 11 x 1.4 mm) BB100 51-85107-*B 2 Package Diagrams 165-Ball FBGA (13 x 15 x 1.2 mm) BB165A 51-85122-*B


    Original
    PDF 42-Ball 100-Ball BB100 165-Ball BB165A BB165B BB165C 172-Ball BB209 BB100 BB484 165 BALL FBGA BB42 bb209a 288-ball 676-BALL BB165B

    BB164

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB164 VHF variable capacitance diode Product specification 1997 Dec 17 Philips Semiconductors Product specification VHF variable capacitance diode BB164 FEATURES DESCRIPTION • High linearity The BB164 is a planar technology


    Original
    PDF M3D049 BB164 BB164 OD323 MAM392 SCA56 117027/1200/01/pp8 BP317

    CY7C1355C

    Abstract: No abstract text available
    Text: CY7C1355C, CY7C1357C 9-Mbit 256 K x 36 / 512 K × 18 Flow-Through SRAM with NoBL Architecture 9-Mbit (256 K × 36 / 512 K × 18) Flow-through SRAM with NoBL™ Architecture Features Functional Description • No Bus Latency™ (NoBL™) architecture eliminates dead


    Original
    PDF CY7C1355C, CY7C1357C CY7C1355C/CY7C1357C CY7C1355C

    T9550

    Abstract: intel p8400 p8600 P9700 diode AH44 320-122 T9900 X9100 CXE DIODE micro switch lie n41
    Text: Intel Core 2 Duo Mobile Processor, Intel® Core™2 Solo Mobile Processor and Intel® Core™2 Extreme Mobile Processor on 45-nm Process Datasheet For platforms based on Mobile Intel® 4 Series Express Chipset Family March 2009 Document Number: 320120-004


    Original
    PDF 45-nm T9550 intel p8400 p8600 P9700 diode AH44 320-122 T9900 X9100 CXE DIODE micro switch lie n41

    Untitled

    Abstract: No abstract text available
    Text: CY7C1568KV18/CY7C1570KV18 72-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • 72-Mbit density (4 M x 18, 2 M × 36) With Read Cycle Latency of 2.5 cycles:


    Original
    PDF CY7C1568KV18/CY7C1570KV18 72-Mbit CY7C1568KV18 CY7C1570KV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1319KV18/CY7C1321KV18 18-Mbit DDR II SRAM Four-Word Burst Architecture 18-Mbit DDR II SRAM Four-Word Burst Architecture Features Configurations • 18-Mbit density 1 M x 18, 512 K × 36 CY7C1319KV18 – 1 M × 18 ■ 333-MHz clock for high bandwidth


    Original
    PDF CY7C1319KV18/CY7C1321KV18 18-Mbit CY7C1319KV18 333-MHz CY7C1321KV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1163KV18/CY7C1165KV18 18-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • Separate independent read and write data ports


    Original
    PDF CY7C1163KV18/CY7C1165KV18 18-Mbit 550-MHz CY7C1165KV18

    Untitled

    Abstract: No abstract text available
    Text:  CY7C1143KV18/CY7C1145KV18 18-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.0 Cycle Read Latency 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations • Separate independent read and write data ports


    Original
    PDF CY7C1143KV18/CY7C1145KV18 18-Mbit 450-MHz CY7C1145KV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1423KV18/CY7C1424KV18 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture 36-Mbit DDR II SIO SRAM Two-Word Burst Architecture Features Configurations • 36-Mbit density 2 M x 18, 1 M × 36 CY7C1423KV18 – 2 M × 18 ■ 333 MHz clock for high bandwidth


    Original
    PDF CY7C1423KV18/CY7C1424KV18 36-Mbit CY7C1423KV18 CY7C1424KV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1548KV18/CY7C1550KV18 72-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.0 Cycle Read Latency 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations • 72-Mbit density (4 M x 18, 2 M × 36) With Read Cycle Latency of 2.0 cycles:


    Original
    PDF CY7C1548KV18/CY7C1550KV18 72-Mbit 450-MHz CY7C1548KV18 CY7C1550KV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1243KV18/CY7C1245KV18 36-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.0 Cycle Read Latency 36-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations Separate independent read and write data ports ❐ Supports concurrent transactions


    Original
    PDF CY7C1243KV18/CY7C1245KV18 36-Mbit CY7C1245KV18

    CY7C1382DV33-200BZI

    Abstract: No abstract text available
    Text: CY7C1380DV33 CY7C1382DV33 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM Features Functional Description • Supports bus operation up to 200 MHz ■ Available speed grades is 200 MHz ■ Registered inputs and outputs for pipelined operation


    Original
    PDF CY7C1380DV33 CY7C1382DV33 18-Mbit CY7C1380DV33/CY7C1382DV33 CY7C1382DV33-200BZI

    CY7C1570KV18

    Abstract: No abstract text available
    Text: CY7C1568KV18/CY7C1570KV18 72-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • 72-Mbit density (4 M x 18, 2 M × 36) With Read Cycle Latency of 2.5 cycles:


    Original
    PDF CY7C1568KV18/CY7C1570KV18 72-Mbit CY7C1568KV18 CY7C1570KV18 CY7C1570KV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C2268KV18/CY7C2270KV18 36-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency with ODT 36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations • 36-Mbit density (2 M x 18, 1 M × 36)


    Original
    PDF CY7C2268KV18/CY7C2270KV18 36-Mbit CY7C2268KV18 CY7C2270KV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1148KV18/CY7C1150KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.0 Cycle Read Latency 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations • 18-Mbit density (1 M x 18, 512 K × 36) With Read Cycle Latency of 2.0 cycles:


    Original
    PDF CY7C1148KV18/CY7C1150KV18 18-Mbit 450-MHz CY7C1148KV18 CY7C1150KV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1521KV18 72-Mbit DDR II SRAM Four-Word Burst Architecture 72-Mbit DDR II SRAM Four-Word Burst Architecture Features Configurations • 72-Mbit Density 2 M x 36 CY7C1521KV18 – 2 M × 36 ■ 250 MHz Clock for High Bandwidth Functional Description ■


    Original
    PDF CY7C1521KV18 72-Mbit

    transistor bl p89

    Abstract: bl p74 transistor J955 XC4000 XC4000A XC4000D XC4000E XC4000EX XC4000H p180 g8
    Text: book XC4000E and XC4000X Series Field Programmable Gate Arrays R January 29, 1999 Version 1.5 6* XC4000E and XC4000X Series Features Note: XC4000 Series devices described in this data sheet include the XC4000E family and XC4000X Series. XC4000X Series devices described in this data sheet


    Original
    PDF XC4000E XC4000X XC4000 XC4000EX XC4000XL transistor bl p89 bl p74 transistor J955 XC4000A XC4000D XC4000H p180 g8

    CY7C1304V25

    Abstract: No abstract text available
    Text: 5 CY7C1304V25 Advanced Information 9-Mb Pipelined SRAM with QDR Architecture Features Functional Description • Separate Independent Read and Write Data Ports — Supports concurrent transactions • 167 MHz Clock for High Bandwidth — 2.5 ns Clock-to-Valid access time


    Original
    PDF CY7C1304V25 CY7C1304V25

    1933E

    Abstract: caption 1AB3 25816 bc136 BC154 CR16 mitsubishi cr64 cr65 VP1160 vp251
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    PDF M37280MF M37280MK M37280EKSP 1933E caption 1AB3 25816 bc136 BC154 CR16 mitsubishi cr64 cr65 VP1160 vp251

    AH40

    Abstract: AW33 AA41 BC35 EPF8050M
    Text: EPF8050M FLEX 8000M Programmable Logic Device March 1995, ver. 3 Features Data Sheet • Prelim inary Information ■ ■ ■ ■ Architecture Description Ideal for ASIC prototyping Combination of four EPF81188 devices and one Field Programmable Interconnect FPIC device


    OCR Scan
    PDF EPF8050M 8000M EPF81188 30-MHz EPF8050M 560-pin 26-inch 50-mil AH40 AW33 AA41 BC35